CN101779249B - 半导体存储器中的可编程芯片使能和芯片地址 - Google Patents
半导体存储器中的可编程芯片使能和芯片地址 Download PDFInfo
- Publication number
- CN101779249B CN101779249B CN200880025636.4A CN200880025636A CN101779249B CN 101779249 B CN101779249 B CN 101779249B CN 200880025636 A CN200880025636 A CN 200880025636A CN 101779249 B CN101779249 B CN 101779249B
- Authority
- CN
- China
- Prior art keywords
- chip
- memory
- address
- memory chip
- programmable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/88—Masking faults in memories by using spares or by reconfiguring with partially good memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/88—Masking faults in memories by using spares or by reconfiguring with partially good memories
- G11C29/886—Masking faults in memories by using spares or by reconfiguring with partially good memories combining plural defective memory devices to provide a contiguous address range, e.g. one device supplies working blocks to replace defective blocks in another device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/763,287 US7715255B2 (en) | 2007-06-14 | 2007-06-14 | Programmable chip enable and chip address in semiconductor memory |
US11/763,292 | 2007-06-14 | ||
US11/763,287 | 2007-06-14 | ||
US11/763,292 US7477545B2 (en) | 2007-06-14 | 2007-06-14 | Systems for programmable chip enable and chip address in semiconductor memory |
PCT/US2008/066111 WO2008157084A1 (en) | 2007-06-14 | 2008-06-06 | Programmable chip enable and chip address in semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101779249A CN101779249A (zh) | 2010-07-14 |
CN101779249B true CN101779249B (zh) | 2013-03-27 |
Family
ID=40156586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880025636.4A Expired - Fee Related CN101779249B (zh) | 2007-06-14 | 2008-06-06 | 半导体存储器中的可编程芯片使能和芯片地址 |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR101440568B1 (zh) |
CN (1) | CN101779249B (zh) |
TW (1) | TWI380165B (zh) |
WO (1) | WO2008157084A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101124331B1 (ko) | 2010-04-30 | 2012-03-19 | 주식회사 하이닉스반도체 | 반도체 장치 |
KR101223540B1 (ko) | 2011-01-14 | 2013-01-21 | 에스케이하이닉스 주식회사 | 반도체 장치, 그의 칩 아이디 부여 방법 및 그의 설정 방법 |
KR101178563B1 (ko) | 2011-02-28 | 2012-08-31 | 에스케이하이닉스 주식회사 | 불휘발성 메모리 장치 및 그 동작방법 |
CN102543189A (zh) * | 2012-02-28 | 2012-07-04 | 北京忆恒创源科技有限公司 | 半导体存储器、接口电路及其访问方法 |
KR20140008550A (ko) | 2012-07-05 | 2014-01-22 | 에스케이하이닉스 주식회사 | 멀티 칩 패키지 메모리 장치의 제어 방법 |
JP2014082245A (ja) * | 2012-10-15 | 2014-05-08 | J Devices:Kk | 半導体記憶装置及びその製造方法 |
CN105989899B (zh) * | 2015-03-05 | 2019-04-02 | 旺宏电子股份有限公司 | 存储器修补方法及其应用元件 |
KR20180067846A (ko) * | 2016-12-13 | 2018-06-21 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그의 동작 방법 |
CN106844266B (zh) * | 2017-02-06 | 2020-01-14 | 京信通信系统(中国)有限公司 | 一种硬件地址编址电路及其制作、使用方法 |
KR20190041071A (ko) | 2017-10-12 | 2019-04-22 | 에스케이하이닉스 주식회사 | 메모리 칩, 이를 포함하는 패키지 장치 및 이의 동작 방법 |
US11017866B2 (en) | 2019-09-03 | 2021-05-25 | Silicon Storage Technology, Inc. | Method of improving read current stability in analog non-volatile memory using final bake in predetermined program state |
CN110892483B (zh) * | 2019-10-17 | 2021-01-29 | 长江存储科技有限责任公司 | 采用有限数量的测试引脚测试存储器件的方法以及利用该方法的存储器件 |
CN110993522A (zh) * | 2019-12-19 | 2020-04-10 | 华天科技(西安)有限公司 | 一种次良品3d nand降容使用的方法 |
US20210311638A1 (en) * | 2020-04-07 | 2021-10-07 | Micron Technology, Inc. | Apparatuses and methods for die replacement in stacked memory |
CN112331251A (zh) * | 2020-12-03 | 2021-02-05 | 深圳市博业诚电子有限公司 | 一种半导体存储器的测试方法 |
CN114743585B (zh) * | 2022-06-10 | 2022-08-30 | 芯天下技术股份有限公司 | 用于测试闪速存储器的编程方法、装置及闪速存储器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5987623A (en) * | 1996-04-11 | 1999-11-16 | Oki Electric Industry Co., Ltd. | Terminal mapping apparatus |
CN1577605A (zh) * | 2003-07-11 | 2005-02-09 | 三星电子株式会社 | 包括已编程及可编程可擦除存储单元的集成电路存储器件 |
CN1691339A (zh) * | 1998-11-16 | 2005-11-02 | 矩阵半导体公司 | 垂直叠式现场可编程非易失存储器和制造方法 |
US7149871B2 (en) * | 2002-12-09 | 2006-12-12 | Sandisk Corporation | Zone boundary adjustment for defects in non-volatile memories |
CN1979873A (zh) * | 2005-12-09 | 2007-06-13 | 旺宏电子股份有限公司 | 栅控二极管非易失性存储器单元 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6426893B1 (en) * | 2000-02-17 | 2002-07-30 | Sandisk Corporation | Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
-
2008
- 2008-06-06 CN CN200880025636.4A patent/CN101779249B/zh not_active Expired - Fee Related
- 2008-06-06 WO PCT/US2008/066111 patent/WO2008157084A1/en active Application Filing
- 2008-06-06 KR KR1020107000810A patent/KR101440568B1/ko active IP Right Grant
- 2008-06-13 TW TW97122255A patent/TWI380165B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5987623A (en) * | 1996-04-11 | 1999-11-16 | Oki Electric Industry Co., Ltd. | Terminal mapping apparatus |
CN1691339A (zh) * | 1998-11-16 | 2005-11-02 | 矩阵半导体公司 | 垂直叠式现场可编程非易失存储器和制造方法 |
US7149871B2 (en) * | 2002-12-09 | 2006-12-12 | Sandisk Corporation | Zone boundary adjustment for defects in non-volatile memories |
CN1577605A (zh) * | 2003-07-11 | 2005-02-09 | 三星电子株式会社 | 包括已编程及可编程可擦除存储单元的集成电路存储器件 |
CN1979873A (zh) * | 2005-12-09 | 2007-06-13 | 旺宏电子股份有限公司 | 栅控二极管非易失性存储器单元 |
Also Published As
Publication number | Publication date |
---|---|
WO2008157084A1 (en) | 2008-12-24 |
CN101779249A (zh) | 2010-07-14 |
TW200912632A (en) | 2009-03-16 |
TWI380165B (en) | 2012-12-21 |
KR101440568B1 (ko) | 2014-09-15 |
KR20100040288A (ko) | 2010-04-19 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SANDISK CORP. Effective date: 20120621 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20120621 Address after: Texas, USA Applicant after: Sandisk Corp. Address before: California, USA Applicant before: Sandisk Corp. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Texas, USA Patentee after: DELPHI INT OPERATIONS LUX SRL Address before: Texas, USA Patentee before: Sandisk Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130327 Termination date: 20210606 |