CN1381848A - 地址生成电路 - Google Patents
地址生成电路 Download PDFInfo
- Publication number
- CN1381848A CN1381848A CN02103163A CN02103163A CN1381848A CN 1381848 A CN1381848 A CN 1381848A CN 02103163 A CN02103163 A CN 02103163A CN 02103163 A CN02103163 A CN 02103163A CN 1381848 A CN1381848 A CN 1381848A
- Authority
- CN
- China
- Prior art keywords
- level
- circuit
- phase inverter
- address generating
- reset signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000630 rising effect Effects 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 1
- 101100194363 Schizosaccharomyces pombe (strain 972 / ATCC 24843) res2 gene Proteins 0.000 description 24
- 101100194362 Schizosaccharomyces pombe (strain 972 / ATCC 24843) res1 gene Proteins 0.000 description 22
- 238000010586 diagram Methods 0.000 description 19
- 230000014509 gene expression Effects 0.000 description 12
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 11
- 238000009825 accumulation Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP101825/2001 | 2001-03-30 | ||
JP2001101825A JP4790925B2 (ja) | 2001-03-30 | 2001-03-30 | アドレス発生回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1381848A true CN1381848A (zh) | 2002-11-27 |
CN1241205C CN1241205C (zh) | 2006-02-08 |
Family
ID=18955091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021031630A Expired - Fee Related CN1241205C (zh) | 2001-03-30 | 2002-02-01 | 地址生成电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6552946B2 (zh) |
JP (1) | JP4790925B2 (zh) |
KR (1) | KR100718901B1 (zh) |
CN (1) | CN1241205C (zh) |
TW (1) | TW550583B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1692452B (zh) * | 2003-02-13 | 2010-12-22 | 富士通半导体股份有限公司 | 半导体器件及半导体器件的控制方法 |
CN102201392A (zh) * | 2010-03-26 | 2011-09-28 | 海力士半导体有限公司 | 电熔丝电路及其操作方法 |
CN101119108B (zh) * | 2007-09-18 | 2014-03-19 | 钰创科技股份有限公司 | 一种熔丝电路 |
CN115035941A (zh) * | 2022-08-12 | 2022-09-09 | 合肥晶合集成电路股份有限公司 | 一种efuse单元结构以及存储器 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6972613B2 (en) * | 2003-09-08 | 2005-12-06 | Infineon Technologies Ag | Fuse latch circuit with non-disruptive re-interrogation |
JP4376161B2 (ja) * | 2004-02-05 | 2009-12-02 | Okiセミコンダクタ株式会社 | 冗長救済回路 |
JP4338548B2 (ja) * | 2004-02-26 | 2009-10-07 | Okiセミコンダクタ株式会社 | パワーオンリセット回路および半導体集積回路 |
US7675796B2 (en) * | 2005-12-27 | 2010-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2007201437A (ja) * | 2005-12-27 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US7609539B2 (en) * | 2006-01-27 | 2009-10-27 | Kilopass Technology, Inc. | Electrically programmable fuse bit |
JP2008153588A (ja) * | 2006-12-20 | 2008-07-03 | Matsushita Electric Ind Co Ltd | 電気ヒューズ回路 |
JP5277987B2 (ja) * | 2009-01-26 | 2013-08-28 | 富士通セミコンダクター株式会社 | 半導体装置およびその制御方法、並びに電子機器 |
KR101137871B1 (ko) * | 2010-03-29 | 2012-04-18 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그의 구동 방법 |
KR101143629B1 (ko) * | 2010-03-31 | 2012-05-09 | 에스케이하이닉스 주식회사 | 퓨즈회로 |
KR101204665B1 (ko) | 2010-03-31 | 2012-11-26 | 에스케이하이닉스 주식회사 | 퓨즈회로 |
JP5743535B2 (ja) * | 2010-12-27 | 2015-07-01 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR101646910B1 (ko) * | 2011-01-11 | 2016-08-09 | 페어차일드코리아반도체 주식회사 | 파워 온 리셋 회로를 포함하는 반도체 소자 |
TWI534956B (zh) * | 2011-05-27 | 2016-05-21 | 半導體能源研究所股份有限公司 | 調整電路及驅動調整電路之方法 |
JP6097775B2 (ja) * | 2015-02-16 | 2017-03-15 | 力晶科技股▲ふん▼有限公司 | 半導体記憶装置及び半導体集積回路装置 |
JP6069544B1 (ja) * | 2016-01-19 | 2017-02-01 | 力晶科技股▲ふん▼有限公司 | ラッチ回路及び半導体記憶装置 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61104500A (ja) * | 1984-10-24 | 1986-05-22 | Hitachi Micro Comput Eng Ltd | 半導体集積回路装置 |
JPS61222318A (ja) * | 1985-03-27 | 1986-10-02 | Fujitsu Ltd | パワ−オンリセツト回路 |
JP2741022B2 (ja) * | 1987-04-01 | 1998-04-15 | 三菱電機株式会社 | パワーオンリセツトパルス発生回路 |
JPH02254811A (ja) * | 1989-03-28 | 1990-10-15 | Mitsubishi Electric Corp | リセツト回路 |
JPH0472912A (ja) * | 1990-07-13 | 1992-03-06 | Nec Ic Microcomput Syst Ltd | パワーオンリセット回路 |
JP2994114B2 (ja) * | 1991-10-08 | 1999-12-27 | 日本電気アイシーマイコンシステム株式会社 | プログラム回路 |
JPH0636593A (ja) * | 1992-07-14 | 1994-02-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP3212396B2 (ja) * | 1993-01-14 | 2001-09-25 | 富士通株式会社 | 不揮発性半導体記憶装置 |
US5357458A (en) * | 1993-06-25 | 1994-10-18 | Advanced Micro Devices, Inc. | System for allowing a content addressable memory to operate with multiple power voltage levels |
KR0147194B1 (ko) * | 1995-05-26 | 1998-11-02 | 문정환 | 반도체 메모리 소자 |
JP3650186B2 (ja) * | 1995-11-28 | 2005-05-18 | 株式会社ルネサステクノロジ | 半導体装置および比較回路 |
JPH09186569A (ja) * | 1996-01-08 | 1997-07-15 | Mitsubishi Electric Corp | 半導体集積回路装置 |
DE19631130C2 (de) * | 1996-08-01 | 2000-08-17 | Siemens Ag | Fuse-Refresh-Schaltung |
JPH117792A (ja) * | 1997-06-19 | 1999-01-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH1131956A (ja) * | 1997-07-10 | 1999-02-02 | Toshiba Corp | リセット信号発生回路 |
JP3176324B2 (ja) * | 1997-07-29 | 2001-06-18 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路 |
JPH1174771A (ja) * | 1997-09-01 | 1999-03-16 | Mitsubishi Electric Corp | パワーオンリセット回路 |
JP3730381B2 (ja) * | 1997-10-21 | 2006-01-05 | 株式会社東芝 | 半導体記憶装置 |
JP2000022512A (ja) * | 1998-06-26 | 2000-01-21 | Oki Electric Ind Co Ltd | パルス発生回路 |
JP2000165220A (ja) * | 1998-11-27 | 2000-06-16 | Fujitsu Ltd | 起動回路及び半導体集積回路装置 |
US6157583A (en) * | 1999-03-02 | 2000-12-05 | Motorola, Inc. | Integrated circuit memory having a fuse detect circuit and method therefor |
JP3808667B2 (ja) * | 1999-07-29 | 2006-08-16 | 株式会社東芝 | 半導体集積回路装置 |
JP3687482B2 (ja) * | 1999-12-13 | 2005-08-24 | セイコーエプソン株式会社 | パワーオンリセット回路 |
JP2001210093A (ja) * | 2000-01-25 | 2001-08-03 | Mitsubishi Electric Corp | リペア信号発生回路 |
JP2001256795A (ja) * | 2000-03-13 | 2001-09-21 | Toshiba Corp | 半導体記憶装置 |
JP3987674B2 (ja) * | 2000-06-01 | 2007-10-10 | 富士通株式会社 | 半導体集積回路 |
US6275443B1 (en) * | 2000-08-30 | 2001-08-14 | Micron Technology, Inc. | Latched row or column select enable driver |
JP3954302B2 (ja) * | 2000-12-06 | 2007-08-08 | 株式会社東芝 | 半導体集積回路 |
JP4227314B2 (ja) * | 2001-04-25 | 2009-02-18 | 株式会社リコー | 電圧検出回路 |
JP3857573B2 (ja) * | 2001-11-20 | 2006-12-13 | 富士通株式会社 | ヒューズ回路 |
-
2001
- 2001-03-30 JP JP2001101825A patent/JP4790925B2/ja not_active Expired - Fee Related
-
2002
- 2002-01-09 US US10/040,443 patent/US6552946B2/en not_active Expired - Lifetime
- 2002-01-21 KR KR1020020003321A patent/KR100718901B1/ko not_active IP Right Cessation
- 2002-02-01 CN CNB021031630A patent/CN1241205C/zh not_active Expired - Fee Related
- 2002-02-04 TW TW091101903A patent/TW550583B/zh not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1692452B (zh) * | 2003-02-13 | 2010-12-22 | 富士通半导体股份有限公司 | 半导体器件及半导体器件的控制方法 |
CN101119108B (zh) * | 2007-09-18 | 2014-03-19 | 钰创科技股份有限公司 | 一种熔丝电路 |
CN102201392A (zh) * | 2010-03-26 | 2011-09-28 | 海力士半导体有限公司 | 电熔丝电路及其操作方法 |
CN102201392B (zh) * | 2010-03-26 | 2015-09-09 | 海力士半导体有限公司 | 电熔丝电路及其操作方法 |
CN115035941A (zh) * | 2022-08-12 | 2022-09-09 | 合肥晶合集成电路股份有限公司 | 一种efuse单元结构以及存储器 |
CN115035941B (zh) * | 2022-08-12 | 2022-11-11 | 合肥晶合集成电路股份有限公司 | 一种efuse单元结构以及存储器 |
Also Published As
Publication number | Publication date |
---|---|
JP2002298594A (ja) | 2002-10-11 |
KR20020077035A (ko) | 2002-10-11 |
US20020141273A1 (en) | 2002-10-03 |
JP4790925B2 (ja) | 2011-10-12 |
KR100718901B1 (ko) | 2007-05-17 |
TW550583B (en) | 2003-09-01 |
CN1241205C (zh) | 2006-02-08 |
US6552946B2 (en) | 2003-04-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20081219 Address after: Tokyo, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kanagawa, Japan Patentee before: Fujitsu Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081219 |
|
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Patentee before: Fujitsu Microelectronics Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Kanagawa Patentee after: Fujitsu Microelectronics Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060208 Termination date: 20200201 |