CN1319883A - 用于低k膜形成的紫外矫正方法和装置 - Google Patents

用于低k膜形成的紫外矫正方法和装置 Download PDF

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CN1319883A
CN1319883A CN01101738A CN01101738A CN1319883A CN 1319883 A CN1319883 A CN 1319883A CN 01101738 A CN01101738 A CN 01101738A CN 01101738 A CN01101738 A CN 01101738A CN 1319883 A CN1319883 A CN 1319883A
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库尔特·H·琼克
尼古拉·R·格罗夫
马利扬·E·阿兹拉克
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Abstract

公开了一种在半导体制备过程中用于形成低k介电膜的方法和系统。首先,在半导体晶片上沉积掺碳的硅氧化物膜。然后用诸如紫外能量的光能来矫正沉积的膜。在一个实施例中,至少30%的光能其频率比可见光的频率高,用于晶片上的光能不会明显地使之加热。适于形成和矫正介电膜的一套装置包括:耦合到有机硅烷源的第一室,向容纳其中的晶片施加光能的第二室,还包括自动部件,其控制晶片在一室和二室之间运动。

Description

用于低k膜形成的紫外矫正方法和装置
本发明涉及半导体加工领域，更具体地涉及使用具有降低的热平衡的矫正方法制备低k介电膜的领域。
在半导体制造领域中，低介电常数膜(低k膜)用于后置(后晶体管)组件来降低总电容串扰。典型地，低k介电膜是用自旋法或是用化学汽相沉积(CVD)法沉积或形成的。低k介电膜形成后，一般要进行一个矫正过程来完善化学键的形成、残余成分的除气以及降低薄膜的介电常数。这个矫正过程通常在炉子中采用批处理方式进行或是在电炉上以单个晶片方式进行。在任何一种情况下，传统的矫正方法由于要持续一段时间都会使晶片温度升高(即在大约1小时以上的时间里温度超过约300℃)，而这是矫正过程中所不希望的。除了消耗一个特定过程明显的一部分热衡算之外，传统的矫正方法还需要耗时的生产步骤，而这可能需要制造商购置额外的加工设备。因此，就希望在低温下做短持续时间的紫外曝光对低k介电膜进行矫正，从而实现所需的膜的介电特性。
本发明是通过实例而不是限定于附图来说明的，其中相同标号表示的是相同的组件，其中：
图1说明了根据本发明的一个实施例的一套装置。
图2说明了根据本发明的一个实施例的一个半导体晶片的紫外照射。
本领域技术人员会意识到，附图中的组件为图示得简单、清晰，不必按比例绘制。比如，图中一些组件的尺寸相对于其他组件来说可能被夸张了，这样有助于更好地理解本发明的实施例。
本发明涉及一种半导体制备方法，其中低k介电膜是用紫外(UV)矫正方法而形成的。低k介电膜可用于，例如，使集成电路中相邻的导体层(通常指金属层)之间绝缘。首先，把介电膜沉积在普通的半导体晶片上。在一个实施例中，根据本发明生成的低介电常数介电膜用作中间层绝缘(ILD)，晶片可能事先通过一些制备步骤被加工，包括隔离结构的形成，势阱结构的形成，以及p型和n型晶体管的形成。在一个实施例中，介电膜沉积是用化学汽相沉积(CVD)方法完成的。在另一个实施例中，介电膜是用自旋工艺沉积而成的。因为用于沉积氧化物和其他绝缘材料的化学汽相沉积装置在大量的半导体制备设施中已经存在了，本发明中介电膜沉积的化学汽相沉积(CVD)方案可以有利地使用在制备设施中的现有设备。在优选实施例中，沉积的介电膜具有相对较低的介电常数(一种低k介电膜)。这种低k介电膜可以包括掺碳的硅氧化物膜。在一个实施例中，比如，低k介电膜是通过把有机硅烷气体和诸如N2O这类含氧的气体，导入一个放置半导体晶片的化学汽相沉积反应室而形成的。适于形成碳基硅氧化物的有机硅烷包括，比如，甲基硅烷、二甲基硅烷、三甲基硅烷以及四甲基硅烷。除了有机硅烷和含氧类气体之外，像氦和氩这些惰性气体也可以在沉积阶段导入反应室。
低k介电膜的化学汽相沉积(CVD)生成可以适当地通过低温方法和高温方法完成。在一个实施例中，低温方法是通过保持化学汽相沉积反应室中晶片卡盘的温度大约为10～25℃，气压大约为3托实现的。尽管低温沉积法可能需要更长的沉积时间，所得的介电膜可以具有更低的介电常数。另外，低温法适于热衡算有限的制备过程。在另一个实施例中，高温沉积法是通过在介电膜沉积过程中保持晶片卡盘的温度范围大约在350～400℃之间。由于高温沉积法具有相对较高的沉积速度，所以比较理想。
有机硅烷基沉积产生的介电膜其特征在于包含甲基和附着于硅和游离的硅烷醇的CHx群(其中x≤3)的Si-O-Si网。沉积的介电膜的介电常数一般在约3.4～4.0的范围内。为了制成介电常数低于3.0的介电膜，本发明的优选实施例包括一个矫正过程。该矫正过程在沉积膜中进行一个凝聚反应，其中硅烷醇分子相互反应形成Si-O-Si键和水。在优选实施例中，该矫正过程去除水以及其他残余成分，诸如氨、Si-CH碎片以及其他残余成分，制成具有SiOxCyHz成分的低k膜。在进一步处理之前对低k膜的矫正能很好地阻止残余成分污染或是影响后面的沉积层。
本发明的一个实施例中，对沉积介电膜的矫正是通过用电磁能(光能)辐射晶片，优选为，用电磁能波谱(即波长约小于400纳米的光能)中紫外部分的光能。介电膜的紫外辐射可以通过把薄膜在像汞弧灯这样的紫外能源上曝光来完成。在这样一个实施例中，由所选的紫外能源所发射的整个辐射谱的至少30％其频率比可见光的频率要高(即其波长约小于400纳米)。
根据本发明的优选实施例，紫外矫正过程是在保持晶片的温度低于约425℃以消耗尽可能少的热衡算来完成的。更佳地，保持晶片温度在约200～250℃范围内、持续时间少于约10分钟，更优选为少于1分钟。低温(即低于250℃)紫外矫正对热预算有限的应用是理想的，较高温的紫外法(即温度低于425℃)可以在更短的时间内制备成具有更低介电常数的介电膜。优选为，紫外能源本身不会明显改变晶片的温度。换句话说，光能对晶片没有明显的热效应。在快速加温退火型的辐射中，光能是晶片受热的主要途径，与之相比，这里考虑的矫正方法可以通过一个或是非常有限数量的紫外辐射源来完成。在晶片逐个矫正(即单晶片模式)的实施例中，一个紫外能源就足够了。在多个晶片同时矫正的实施例中，需要多个紫外能源，而紫外源的数量最好少于或是等于每批矫正的晶片的数量。
本发明的一个实施例考虑一个就地生成低k介电膜的方法，其中晶片在沉积介电和矫正过程之间不与大气接触(即沉积和矫正步骤是用一个装置完成的)。图1说明的是适合完成这种就地生成低k介电膜的一套装置(系统)100的实施例。在所述实施例中，系统100包括复合反应室(组件)102a直到102e(一般总称为组件102)以及一个控制晶片在不同的102组件之间运动的自动部件(缓冲室)104，这对化学汽相沉积系统的技术人员来说是熟悉的。优选为，缓冲室104适于在不同的102组件之间传输晶片而不必把晶片曝光在大气中。优选为，102的每个组件包括一个容纳晶片的卡盘。102的每个组件可以作为一种氧化物沉积组件，一个紫外矫正组件，或是作其他适当的组件。在所述实施例中，例如，组件102a被用于紫外组件，而102b被用于化学汽相沉积的低k介电室。其他的102c、102d、和102e组件可作沉积组件或是紫外组件，这取决于具体需要。在一个实施例中，要制备一个复合材料或是集成的介电结构，比如，希望把102c设置成抗反射涂层(ARC)或是钝化组件，组件102d设置成TEOS沉积组件、102e室设成紫外组件。在另一实施例中，系统100可以用于一种特殊的沉积过程。在此实施例中，系统100可以用于一种特殊的沉积过程。在此实施例中，例如，组件102a和102e可以用作紫外矫正组件而组件102b、102c、和102d用作低k介电沉积。
这样，系统100适于完成沉积和低k介电材料矫正，该系统通过把晶片传输到102b室完成低k沉积过程，此后再把晶片传输到102a完成紫外矫正过程。在沉积过程中，通过把紫外矫正过程一体化到同一设备中，本发明的这一实施例考虑了一种一体化的制备过程，这样可以有益地降低处理过程的费用同时又能使提高加工生产量并能减少加工的缺陷。在一个实施例中，系统100中包括一个由标号106所表示的冷却区域，组件102可以通过把冷却区106与紫外能源做在一起而保留，这样介电膜的紫外矫正就可以在冷却区106中完成。在此实施例中，冷却区106可以做成具有多槽晶片处理能力，从而完成多晶片的处理。尽管所述的实施例说明了适于把矫正过程与沉积过程一体化后的多室装置，还应该理解，本发明的其他实施例可以使用分离的装置来完成沉积和矫正过程。
在所述实施例中，系统100的102a室是有紫外灯或是紫外能源的气压可变的室，这使得本发明的紫外矫正过程能在102a组件中完成。在一个实施例中，102a室中的紫外能源产生的能量主要是紫外能量。在所述实施例中，系统100的102b室连接到适于完成本发明的介电沉积过程的不同的气体源上。在所述的实施例中，连接到第二室102b上的气体源包括一个诸如甲基硅样的有机硅烷源，一个诸如一氧化二氮(N2O)这样的氧化源以及像氦气这样的惰性气体源。这样，系统100适于完成一个过程，其中晶片放在102b室的第一卡盘上。掺碳的硅氧化物接着通过102b室中进行的化学汽相沉积被沉积在晶片上。在一个实施例中，第一卡盘的温度保持在大约25℃以下。在另一个实施例中，第一卡盘的温度大约保持在17℃以下。在化学汽相沉积掺碳的氧化物之后，晶片通过104室被传送到102a室的第2卡盘上。在102a室中，掺碳的氧化物对光能曝光，所用光能最好是像汞弧灯这样的主要是紫外能量的适当的源。第2卡盘最好是能控制温度的卡盘，晶片在紫外能源下曝光时保持其温度升高的范围大约是在250～425℃之间。102a室中的气压可以降低至20托以下，更佳地在大约3～5托之间。另外，102a室可以耦合到一个氮气源上，这样就可以在氮气环境中进行紫外曝光。参见图2，所示的是紫外辐射法的一个实施例。在此实施例中，晶片202被放在卡盘204上，而且受到由标号206所示的来自紫外能源208的紫外能的照射。晶片202在传送到204卡盘之前已经覆盖了一层介电材料(在图2中没有具体表示)。在一个实施例中，紫外灯208是汞弧灯，产生的能量206主要是由紫外能量组成的。
在上述说明书中，本发明已通过具体实施例做了描述。可是，本领域普通技术人员应当理解，可以作各种修改和变化而不偏离权利要求书所阐明的本发明的范围。同样，说明书和附图应被看作说明性的而非限制性的，而且所有这些修改都应看作包括在本发明范围之内。好处，其他优点和问题的解决方案已经参照具体实施例描述。然而，这种好处、优点、解决方案，和可能导致任何好处、优点，或解决方案产生或变得显著的任何因素都不应解释为任何或全部权利要求的首要、必需或基本的特征或要素。

Claims (10)

1．一种在半导体晶片上形成低k介电层的方法，其特征在于步骤：
在半导体晶片上沉积掺碳的硅氧化物膜；
把光能作用于掺碳的硅氧化物膜，其中至少30％的光能其频率高于可见光的频率。
2．根据权利要求1的方法，其中，掺碳硅氧化物是通过化学汽相沉积法沉积而成的。
3．根据权利要求1的方法，其中，光能对晶片没有明显的热效应。
4．根据权利要求3的方法，其中，光能主要是紫外光。
5．一套装置，其特征在于：
耦合于有机硅烷源的第一室；
容纳半导体晶片并施用光能的第二室，其中至少30％的光能其频率比可见光频率高；以及
一个自动部件，用于控制晶片在第一室和第二室之间运动。
6．根据权利要求5的一套装置，其中，有机硅烷源提供甲基硅烷。
7．根据权利要求6的一套装置，进一步的特征在于耦合于第一室的一氧化二氮源。
8．根据权利要求6的一套装置，进一步的特征在于耦合于第一室的氦源。
9．根据权利要求5的一套装置，其中，第二室有一个温度控制卡盘。
10．根据权利要求9的一套装置，其中，第二室耦合于一个氮源。
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TW515033B (en) 2002-12-21
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