CN1296999C - 具有缩短的焊盘间距的半导体集成电路 - Google Patents
具有缩短的焊盘间距的半导体集成电路 Download PDFInfo
- Publication number
- CN1296999C CN1296999C CNB031311962A CN03131196A CN1296999C CN 1296999 C CN1296999 C CN 1296999C CN B031311962 A CNB031311962 A CN B031311962A CN 03131196 A CN03131196 A CN 03131196A CN 1296999 C CN1296999 C CN 1296999C
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- semiconductor integrated
- integrated circuit
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000000523 sample Substances 0.000 claims description 38
- 238000012360 testing method Methods 0.000 claims description 12
- 238000011017 operating method Methods 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 6
- 230000011664 signaling Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004904 shortening Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01076—Osmium [Os]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Tests Of Electronic Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP140078/2002 | 2002-05-15 | ||
JP2002140078A JP4313544B2 (ja) | 2002-05-15 | 2002-05-15 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1482679A CN1482679A (zh) | 2004-03-17 |
CN1296999C true CN1296999C (zh) | 2007-01-24 |
Family
ID=29416926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031311962A Expired - Fee Related CN1296999C (zh) | 2002-05-15 | 2003-05-15 | 具有缩短的焊盘间距的半导体集成电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6849956B2 (zh) |
JP (1) | JP4313544B2 (zh) |
KR (1) | KR100933413B1 (zh) |
CN (1) | CN1296999C (zh) |
TW (1) | TWI223403B (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1487015B1 (en) * | 2003-06-10 | 2011-05-04 | STMicroelectronics Srl | Semiconductor electronic device and method of manufacturing thereof |
JP4592080B2 (ja) | 2005-02-21 | 2010-12-01 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
JP4813909B2 (ja) * | 2006-01-31 | 2011-11-09 | シャープ株式会社 | 集積回路およびそのテスト方法 |
KR100899664B1 (ko) | 2007-01-10 | 2009-05-27 | 삼성전자주식회사 | 반도체 메모리 장치 및 이 장치의 테스트 방법 |
JP2009239259A (ja) * | 2008-03-04 | 2009-10-15 | Elpida Memory Inc | 半導体装置 |
CN101545942B (zh) * | 2008-03-27 | 2013-05-08 | 矽创电子股份有限公司 | 用于测试连接垫的电路 |
TWI407348B (zh) * | 2010-11-01 | 2013-09-01 | Au Optronics Corp | 接觸墊陣列 |
US8860448B2 (en) * | 2011-07-15 | 2014-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Test schemes and apparatus for passive interposers |
CN102314009A (zh) * | 2011-09-09 | 2012-01-11 | 深圳市华星光电技术有限公司 | 液晶显示模组及液晶显示面板 |
TWI463155B (zh) | 2012-12-24 | 2014-12-01 | Novatek Microelectronics Corp | 具有薄膜覆晶封裝的電子裝置 |
CN103915416B (zh) * | 2013-01-08 | 2016-12-28 | 联咏科技股份有限公司 | 具有薄膜覆晶封装的电子装置 |
CN104363700B (zh) * | 2014-11-13 | 2018-02-13 | 深圳市华星光电技术有限公司 | 印刷电路板 |
TWI571642B (zh) * | 2015-09-10 | 2017-02-21 | 新特系統股份有限公司 | 使用單一探針測試晶片的多個連接墊的測試裝置及方法 |
KR20210040531A (ko) | 2019-10-04 | 2021-04-14 | 에스케이하이닉스 주식회사 | 와이어를 이용한 반도체 장치 및 스택형 반도체 패키지 |
CN111308815B (zh) * | 2020-02-28 | 2023-04-18 | 上海中航光电子有限公司 | 阵列基板及显示面板 |
TWI747303B (zh) * | 2020-05-29 | 2021-11-21 | 友達光電股份有限公司 | 測試電極組及測試系統 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63178538A (ja) * | 1987-01-20 | 1988-07-22 | Nec Corp | 半導体集積回路装置 |
US4808844A (en) * | 1986-04-17 | 1989-02-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
CN1111824A (zh) * | 1993-12-21 | 1995-11-15 | 株式会社东芝 | 半导体集成电路装置 |
JPH08184646A (ja) * | 1994-12-28 | 1996-07-16 | Nec Ic Microcomput Syst Ltd | 半導体集積回路 |
JPH0992787A (ja) * | 1995-09-28 | 1997-04-04 | Nec Yamaguchi Ltd | 半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63199439A (ja) | 1987-02-16 | 1988-08-17 | Hitachi Ltd | 半導体集積回路装置 |
US5254482A (en) * | 1990-04-16 | 1993-10-19 | National Semiconductor Corporation | Ferroelectric capacitor test structure for chip die |
JPH0529457A (ja) * | 1991-07-24 | 1993-02-05 | Mitsubishi Electric Corp | 半導体集積回路 |
JPH05166902A (ja) | 1991-12-18 | 1993-07-02 | Mitsubishi Electric Corp | 半導体集積回路 |
JP3181000B2 (ja) * | 1994-03-29 | 2001-07-03 | ローム株式会社 | 半導体集積回路装置 |
JP2888755B2 (ja) * | 1994-04-28 | 1999-05-10 | 株式会社メガチップス | 半導体装置 |
US5521530A (en) * | 1994-08-31 | 1996-05-28 | Oki Semiconductor America, Inc. | Efficient method and resulting structure for integrated circuits with flexible I/O interface and power supply voltages |
JPH1022299A (ja) * | 1996-07-08 | 1998-01-23 | Oki Electric Ind Co Ltd | 半導体集積回路 |
US5734661A (en) * | 1996-09-20 | 1998-03-31 | Micron Technology, Inc. | Method and apparatus for providing external access to internal integrated circuit test circuits |
JP2000100814A (ja) * | 1998-09-18 | 2000-04-07 | Hitachi Ltd | 半導体装置 |
JP2001185680A (ja) * | 1999-12-22 | 2001-07-06 | Mitsubishi Electric Corp | 半導体装置 |
-
2002
- 2002-05-15 JP JP2002140078A patent/JP4313544B2/ja not_active Expired - Fee Related
-
2003
- 2003-05-07 US US10/430,341 patent/US6849956B2/en not_active Expired - Lifetime
- 2003-05-12 TW TW092112819A patent/TWI223403B/zh not_active IP Right Cessation
- 2003-05-14 KR KR1020030030496A patent/KR100933413B1/ko active IP Right Grant
- 2003-05-15 CN CNB031311962A patent/CN1296999C/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4808844A (en) * | 1986-04-17 | 1989-02-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
JPS63178538A (ja) * | 1987-01-20 | 1988-07-22 | Nec Corp | 半導体集積回路装置 |
CN1111824A (zh) * | 1993-12-21 | 1995-11-15 | 株式会社东芝 | 半导体集成电路装置 |
JPH08184646A (ja) * | 1994-12-28 | 1996-07-16 | Nec Ic Microcomput Syst Ltd | 半導体集積回路 |
JPH0992787A (ja) * | 1995-09-28 | 1997-04-04 | Nec Yamaguchi Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4313544B2 (ja) | 2009-08-12 |
US20030214008A1 (en) | 2003-11-20 |
KR20030089462A (ko) | 2003-11-21 |
KR100933413B1 (ko) | 2009-12-22 |
US6849956B2 (en) | 2005-02-01 |
CN1482679A (zh) | 2004-03-17 |
TWI223403B (en) | 2004-11-01 |
JP2003332450A (ja) | 2003-11-21 |
TW200402844A (en) | 2004-02-16 |
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20081219 Address after: Tokyo, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kanagawa, Japan Patentee before: Fujitsu Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081219 |
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Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Patentee before: Fujitsu Microelectronics Ltd. |
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CP02 | Change in the address of a patent holder |
Address after: Kanagawa Patentee after: Fujitsu Microelectronics Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150526 |
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