CN1210780C - 槽型元件分离结构 - Google Patents
槽型元件分离结构 Download PDFInfo
- Publication number
- CN1210780C CN1210780C CNB021574898A CN02157489A CN1210780C CN 1210780 C CN1210780 C CN 1210780C CN B021574898 A CNB021574898 A CN B021574898A CN 02157489 A CN02157489 A CN 02157489A CN 1210780 C CN1210780 C CN 1210780C
- Authority
- CN
- China
- Prior art keywords
- film
- oxide
- groove
- mentioned
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002955 isolation Methods 0.000 title abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 238000000926 separation method Methods 0.000 claims description 89
- 230000003647 oxidation Effects 0.000 claims description 86
- 238000007254 oxidation reaction Methods 0.000 claims description 86
- 210000002421 cell wall Anatomy 0.000 claims description 5
- 238000000034 method Methods 0.000 description 145
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 79
- 229920005591 polysilicon Polymers 0.000 description 79
- 238000004519 manufacturing process Methods 0.000 description 66
- 239000010410 layer Substances 0.000 description 63
- 238000005530 etching Methods 0.000 description 52
- 229910052581 Si3N4 Inorganic materials 0.000 description 38
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 38
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 28
- 238000005229 chemical vapour deposition Methods 0.000 description 21
- 230000000694 effects Effects 0.000 description 21
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 20
- 238000001312 dry etching Methods 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000007800 oxidant agent Substances 0.000 description 12
- 230000001590 oxidative effect Effects 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 238000001039 wet etching Methods 0.000 description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 230000002441 reversible effect Effects 0.000 description 8
- 210000004027 cell Anatomy 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008719 thickening Effects 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 210000003323 beak Anatomy 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9360097 | 1997-04-11 | ||
JP93600/1997 | 1997-04-11 | ||
JP192269/1997 | 1997-07-17 | ||
JP19226997A JP3904676B2 (ja) | 1997-04-11 | 1997-07-17 | トレンチ型素子分離構造の製造方法およびトレンチ型素子分離構造 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981053610A Division CN1134058C (zh) | 1997-04-11 | 1998-03-02 | 槽型元件分离结构的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1430260A CN1430260A (zh) | 2003-07-16 |
CN1210780C true CN1210780C (zh) | 2005-07-13 |
Family
ID=26434928
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981053610A Expired - Lifetime CN1134058C (zh) | 1997-04-11 | 1998-03-02 | 槽型元件分离结构的制造方法 |
CNB021574898A Expired - Lifetime CN1210780C (zh) | 1997-04-11 | 2002-12-17 | 槽型元件分离结构 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981053610A Expired - Lifetime CN1134058C (zh) | 1997-04-11 | 1998-03-02 | 槽型元件分离结构的制造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6265743B1 (zh) |
JP (1) | JP3904676B2 (zh) |
KR (2) | KR100283021B1 (zh) |
CN (2) | CN1134058C (zh) |
DE (1) | DE19748501C2 (zh) |
TW (1) | TW354857B (zh) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4649006B2 (ja) * | 1999-07-16 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR20010038753A (ko) * | 1999-10-27 | 2001-05-15 | 박종섭 | 반도체 장치의 분리구조 제조방법 |
US6500729B1 (en) * | 2000-06-02 | 2002-12-31 | Agere Systems Guardian Corp. | Method for reducing dishing related issues during the formation of shallow trench isolation structures |
KR100429421B1 (ko) * | 2000-08-12 | 2004-04-29 | 김승준 | 반도체 소자 분리 공정을 위한 얕은 트렌치 형성 |
US20020068415A1 (en) * | 2000-12-01 | 2002-06-06 | Hua-Chou Tseng | Method of fabricating a shallow trench isolation structure |
JP4989817B2 (ja) * | 2000-12-21 | 2012-08-01 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
KR20020056664A (ko) * | 2000-12-29 | 2002-07-10 | 박종섭 | 반도체소자의 소자분리막 형성방법 |
JP2002203894A (ja) * | 2001-01-04 | 2002-07-19 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2003017556A (ja) | 2001-06-29 | 2003-01-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP3418386B2 (ja) * | 2001-08-16 | 2003-06-23 | 沖電気工業株式会社 | 半導体装置の製造方法 |
DE10202140A1 (de) * | 2002-01-21 | 2003-08-07 | Infineon Technologies Ag | Verfahren zum Herstellen eines Hohlraums in einem monokristallinen Siliziumsubstrat und Halbleiterbaustein mit einem Hohlraum in einem monokristallinen Siliziumsubstrat mit einer epitaktischen Deckschicht |
KR100857576B1 (ko) * | 2002-06-27 | 2008-09-09 | 매그나칩 반도체 유한회사 | 반도체소자의 스토리지 노드 형성방법 |
KR100486111B1 (ko) * | 2002-07-10 | 2005-04-29 | 매그나칩 반도체 유한회사 | 반도체소자의 소자분리막 제조방법 |
JP2004111429A (ja) * | 2002-09-13 | 2004-04-08 | Renesas Technology Corp | 半導体装置 |
US7091105B2 (en) * | 2002-10-28 | 2006-08-15 | Hynix Semiconductor Inc. | Method of forming isolation films in semiconductor devices |
JP2004172310A (ja) | 2002-11-19 | 2004-06-17 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2006525652A (ja) * | 2002-12-19 | 2006-11-09 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 半導体デバイスコーナー部の丸め程度を相異なるものとするトレンチ絶縁構造及びその製造方法 |
US6649489B1 (en) * | 2003-02-13 | 2003-11-18 | Taiwan Semiconductor Manufacturing Company | Poly etching solution to improve silicon trench for low STI profile |
KR100619396B1 (ko) * | 2003-12-31 | 2006-09-11 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서 및 그 제조방법 |
US20050205963A1 (en) * | 2004-03-16 | 2005-09-22 | Johnson David A | Integrated anneal cap/ ion implant mask/ trench isolation structure for III-V devices |
US7410864B2 (en) * | 2004-04-23 | 2008-08-12 | Infineon Technologies Ag | Trench and a trench capacitor and method for forming the same |
US7319252B2 (en) * | 2004-06-28 | 2008-01-15 | Intel Corporation | Methods for forming semiconductor wires and resulting devices |
US20050285160A1 (en) * | 2004-06-28 | 2005-12-29 | Chang Peter L | Methods for forming semiconductor wires and resulting devices |
US7880223B2 (en) * | 2005-02-11 | 2011-02-01 | Alpha & Omega Semiconductor, Ltd. | Latch-up free vertical TVS diode array structure using trench isolation |
KR100719366B1 (ko) * | 2005-06-15 | 2007-05-17 | 삼성전자주식회사 | 트렌치 소자분리막을 갖는 반도체 소자의 형성 방법 |
US8043933B2 (en) * | 2008-11-24 | 2011-10-25 | Applied Materials, Inc. | Integration sequences with top surface profile modification |
CN102543820B (zh) * | 2010-12-16 | 2014-11-05 | 中芯国际集成电路制造(北京)有限公司 | 浅沟槽隔离结构及其形成方法 |
CN102543822B (zh) * | 2010-12-23 | 2014-11-05 | 无锡华润上华半导体有限公司 | 浅沟槽隔离结构的制作方法 |
CN103824804B (zh) * | 2014-03-10 | 2017-03-01 | 杭州士兰集成电路有限公司 | 半导体沟槽结构的形成方法 |
JP6649190B2 (ja) | 2016-06-28 | 2020-02-19 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10546863B1 (en) * | 2018-08-02 | 2020-01-28 | Micron Technology, Inc. | Method for fabricating bit line contact |
JP7375331B2 (ja) * | 2019-04-26 | 2023-11-08 | セイコーエプソン株式会社 | 振動デバイスおよび電子機器 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4307180A (en) * | 1980-08-22 | 1981-12-22 | International Business Machines Corp. | Process of forming recessed dielectric regions in a monocrystalline silicon substrate |
DE3265339D1 (en) * | 1981-03-20 | 1985-09-19 | Toshiba Kk | Method for manufacturing semiconductor device |
JPS618945A (ja) * | 1984-06-25 | 1986-01-16 | Nec Corp | 半導体集積回路装置 |
US4656497A (en) * | 1984-11-01 | 1987-04-07 | Ncr Corporation | Trench isolation structures |
US4571819A (en) * | 1984-11-01 | 1986-02-25 | Ncr Corporation | Method for forming trench isolation structures |
US4666556A (en) * | 1986-05-12 | 1987-05-19 | International Business Machines Corporation | Trench sidewall isolation by polysilicon oxidation |
JPS6469027A (en) | 1987-09-10 | 1989-03-15 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH01222457A (ja) | 1988-03-01 | 1989-09-05 | Fujitsu Ltd | 半導体装置の製造方法 |
US5059550A (en) * | 1988-10-25 | 1991-10-22 | Sharp Kabushiki Kaisha | Method of forming an element isolating portion in a semiconductor device |
US4952524A (en) * | 1989-05-05 | 1990-08-28 | At&T Bell Laboratories | Semiconductor device manufacture including trench formation |
CA2016449C (en) * | 1989-07-28 | 1996-06-25 | Steven J. Hillenius | Planar isolation technique for integrated circuits |
KR920020676A (ko) * | 1991-04-09 | 1992-11-21 | 김광호 | 반도체 장치의 소자분리 방법 |
US5229316A (en) * | 1992-04-16 | 1993-07-20 | Micron Technology, Inc. | Semiconductor processing method for forming substrate isolation trenches |
US5433794A (en) * | 1992-12-10 | 1995-07-18 | Micron Technology, Inc. | Spacers used to form isolation trenches with improved corners |
JP2955459B2 (ja) * | 1993-12-20 | 1999-10-04 | 株式会社東芝 | 半導体装置の製造方法 |
JPH07193121A (ja) | 1993-12-27 | 1995-07-28 | Toshiba Corp | 半導体装置の製造方法 |
JP3383404B2 (ja) | 1994-03-16 | 2003-03-04 | 株式会社東芝 | 半導体装置の製造方法 |
JPH07335737A (ja) | 1994-06-03 | 1995-12-22 | Toshiba Corp | 半導体記憶装置の製造方法 |
WO1996002070A2 (en) * | 1994-07-12 | 1996-01-25 | National Semiconductor Corporation | Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit |
US5786263A (en) * | 1995-04-04 | 1998-07-28 | Motorola, Inc. | Method for forming a trench isolation structure in an integrated circuit |
JP3092478B2 (ja) | 1995-06-16 | 2000-09-25 | 日本電気株式会社 | 半導体装置の製造方法 |
US6064104A (en) * | 1996-01-31 | 2000-05-16 | Advanced Micro Devices, Inc. | Trench isolation structures with oxidized silicon regions and method for making the same |
US5763315A (en) * | 1997-01-28 | 1998-06-09 | International Business Machines Corporation | Shallow trench isolation with oxide-nitride/oxynitride liner |
US5981356A (en) * | 1997-07-28 | 1999-11-09 | Integrated Device Technology, Inc. | Isolation trenches with protected corners |
US6001706A (en) * | 1997-12-08 | 1999-12-14 | Chartered Semiconductor Manufacturing, Ltd. | Method for making improved shallow trench isolation for semiconductor integrated circuits |
US6054343A (en) * | 1998-01-26 | 2000-04-25 | Texas Instruments Incorporated | Nitride trench fill process for increasing shallow trench isolation (STI) robustness |
-
1997
- 1997-07-17 JP JP19226997A patent/JP3904676B2/ja not_active Expired - Lifetime
- 1997-10-24 TW TW086115761A patent/TW354857B/zh not_active IP Right Cessation
- 1997-11-03 DE DE19748501A patent/DE19748501C2/de not_active Expired - Lifetime
- 1997-11-04 US US08/963,764 patent/US6265743B1/en not_active Expired - Lifetime
- 1997-12-30 KR KR1019970079096A patent/KR100283021B1/ko active IP Right Grant
-
1998
- 1998-03-02 CN CNB981053610A patent/CN1134058C/zh not_active Expired - Lifetime
-
2000
- 2000-08-11 KR KR1020000046645A patent/KR100308510B1/ko active IP Right Grant
-
2001
- 2001-05-21 US US09/860,505 patent/US6372604B1/en not_active Expired - Lifetime
-
2002
- 2002-12-17 CN CNB021574898A patent/CN1210780C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100283021B1 (ko) | 2001-04-02 |
DE19748501C2 (de) | 2001-08-30 |
TW354857B (en) | 1999-03-21 |
KR19980079567A (ko) | 1998-11-25 |
US6265743B1 (en) | 2001-07-24 |
CN1430260A (zh) | 2003-07-16 |
CN1196574A (zh) | 1998-10-21 |
JP3904676B2 (ja) | 2007-04-11 |
US6372604B1 (en) | 2002-04-16 |
JPH10340950A (ja) | 1998-12-22 |
CN1134058C (zh) | 2004-01-07 |
DE19748501A1 (de) | 1998-10-15 |
KR100308510B1 (ko) | 2001-11-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1210780C (zh) | 槽型元件分离结构 | |
CN1205664C (zh) | 半导体装置及其制造方法 | |
CN100336228C (zh) | 半导体器件 | |
CN100350626C (zh) | 具有槽型结构的半导体器件 | |
CN1237616C (zh) | 具有浮置栅的半导体存储器及其制造方法 | |
CN1310332C (zh) | 非易失性半导体存储器 | |
CN1303698C (zh) | 半导体器件及其制造方法 | |
CN1192051A (zh) | 半导体器件及其制造方法 | |
CN101075577A (zh) | 半导体装置的制造方法 | |
CN1905213A (zh) | 非易失性半导体存储器、半导体器件和非易失性半导体存储器的制造方法 | |
CN1421914A (zh) | 半导体装置及其制造方法 | |
CN1227745C (zh) | 垂直金属-氧化物-半导体晶体管及其制造方法 | |
CN1641854A (zh) | 制造半导体器件的方法 | |
CN1184682C (zh) | 半导体集成电路器件及其制造方法 | |
CN1617353A (zh) | 半导体器件的制造方法 | |
CN1885561A (zh) | 绝缘栅型半导体装置、制造方法及保护电路 | |
CN1925161A (zh) | 半导体产品及其制作方法 | |
CN1213843A (zh) | 半导体衬底的处理方法和半导体衬底 | |
CN101030598A (zh) | 半导体装置及其制造方法 | |
CN1729558A (zh) | 垂直分离栅非易失性存储单元及其制造方法 | |
CN1132248C (zh) | 半导体装置和半导体装置的制造方法 | |
CN1244143C (zh) | 半导体器件 | |
CN1053296C (zh) | 半导体器件及其制造方法 | |
CN1139985C (zh) | 半导体器件及其制造方法 | |
CN1267915A (zh) | 非易失性半导体存储装置及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: MISSUBISHI ELECTRIC CORP. Effective date: 20140416 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140416 Address after: Kawasaki, Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Tokyo, Japan, Japan Patentee before: Missubishi Electric Co., Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: Renesas Electronics Corporation Address before: Kawasaki, Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
|
CP02 | Change in the address of a patent holder | ||
CX01 | Expiry of patent term |
Granted publication date: 20050713 |
|
CX01 | Expiry of patent term |