TW354857B - Trench isolation structure and fabrication thereof - Google Patents

Trench isolation structure and fabrication thereof

Info

Publication number
TW354857B
TW354857B TW086115761A TW86115761A TW354857B TW 354857 B TW354857 B TW 354857B TW 086115761 A TW086115761 A TW 086115761A TW 86115761 A TW86115761 A TW 86115761A TW 354857 B TW354857 B TW 354857B
Authority
TW
Taiwan
Prior art keywords
oxide
buried
polysilicon
deposited
isolation structure
Prior art date
Application number
TW086115761A
Other languages
English (en)
Inventor
Maiko Sakai
Takashi Kuroi
Katsuyuki Horita
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW354857B publication Critical patent/TW354857B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
TW086115761A 1997-04-11 1997-10-24 Trench isolation structure and fabrication thereof TW354857B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9360097 1997-04-11
JP19226997A JP3904676B2 (ja) 1997-04-11 1997-07-17 トレンチ型素子分離構造の製造方法およびトレンチ型素子分離構造

Publications (1)

Publication Number Publication Date
TW354857B true TW354857B (en) 1999-03-21

Family

ID=26434928

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086115761A TW354857B (en) 1997-04-11 1997-10-24 Trench isolation structure and fabrication thereof

Country Status (6)

Country Link
US (2) US6265743B1 (zh)
JP (1) JP3904676B2 (zh)
KR (2) KR100283021B1 (zh)
CN (2) CN1134058C (zh)
DE (1) DE19748501C2 (zh)
TW (1) TW354857B (zh)

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JP4649006B2 (ja) * 1999-07-16 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
KR20010038753A (ko) * 1999-10-27 2001-05-15 박종섭 반도체 장치의 분리구조 제조방법
US6500729B1 (en) * 2000-06-02 2002-12-31 Agere Systems Guardian Corp. Method for reducing dishing related issues during the formation of shallow trench isolation structures
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US20020068415A1 (en) * 2000-12-01 2002-06-06 Hua-Chou Tseng Method of fabricating a shallow trench isolation structure
JP4989817B2 (ja) * 2000-12-21 2012-08-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR20020056664A (ko) * 2000-12-29 2002-07-10 박종섭 반도체소자의 소자분리막 형성방법
JP2002203894A (ja) * 2001-01-04 2002-07-19 Mitsubishi Electric Corp 半導体装置の製造方法
JP2003017556A (ja) 2001-06-29 2003-01-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3418386B2 (ja) * 2001-08-16 2003-06-23 沖電気工業株式会社 半導体装置の製造方法
DE10202140A1 (de) * 2002-01-21 2003-08-07 Infineon Technologies Ag Verfahren zum Herstellen eines Hohlraums in einem monokristallinen Siliziumsubstrat und Halbleiterbaustein mit einem Hohlraum in einem monokristallinen Siliziumsubstrat mit einer epitaktischen Deckschicht
KR100857576B1 (ko) * 2002-06-27 2008-09-09 매그나칩 반도체 유한회사 반도체소자의 스토리지 노드 형성방법
KR100486111B1 (ko) * 2002-07-10 2005-04-29 매그나칩 반도체 유한회사 반도체소자의 소자분리막 제조방법
JP2004111429A (ja) * 2002-09-13 2004-04-08 Renesas Technology Corp 半導体装置
US7091105B2 (en) * 2002-10-28 2006-08-15 Hynix Semiconductor Inc. Method of forming isolation films in semiconductor devices
JP2004172310A (ja) 2002-11-19 2004-06-17 Renesas Technology Corp 半導体装置の製造方法
WO2004061945A1 (en) * 2002-12-19 2004-07-22 Advanced Micro Devices, Inc. Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same
US6649489B1 (en) * 2003-02-13 2003-11-18 Taiwan Semiconductor Manufacturing Company Poly etching solution to improve silicon trench for low STI profile
KR100619396B1 (ko) * 2003-12-31 2006-09-11 동부일렉트로닉스 주식회사 시모스 이미지 센서 및 그 제조방법
US20050205963A1 (en) * 2004-03-16 2005-09-22 Johnson David A Integrated anneal cap/ ion implant mask/ trench isolation structure for III-V devices
US7410864B2 (en) * 2004-04-23 2008-08-12 Infineon Technologies Ag Trench and a trench capacitor and method for forming the same
US20050285160A1 (en) * 2004-06-28 2005-12-29 Chang Peter L Methods for forming semiconductor wires and resulting devices
US7319252B2 (en) * 2004-06-28 2008-01-15 Intel Corporation Methods for forming semiconductor wires and resulting devices
US7880223B2 (en) * 2005-02-11 2011-02-01 Alpha & Omega Semiconductor, Ltd. Latch-up free vertical TVS diode array structure using trench isolation
KR100719366B1 (ko) * 2005-06-15 2007-05-17 삼성전자주식회사 트렌치 소자분리막을 갖는 반도체 소자의 형성 방법
US8043933B2 (en) * 2008-11-24 2011-10-25 Applied Materials, Inc. Integration sequences with top surface profile modification
CN102543820B (zh) * 2010-12-16 2014-11-05 中芯国际集成电路制造(北京)有限公司 浅沟槽隔离结构及其形成方法
CN102543822B (zh) * 2010-12-23 2014-11-05 无锡华润上华半导体有限公司 浅沟槽隔离结构的制作方法
CN103824804B (zh) * 2014-03-10 2017-03-01 杭州士兰集成电路有限公司 半导体沟槽结构的形成方法
JP6649190B2 (ja) 2016-06-28 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10546863B1 (en) * 2018-08-02 2020-01-28 Micron Technology, Inc. Method for fabricating bit line contact
JP7375331B2 (ja) * 2019-04-26 2023-11-08 セイコーエプソン株式会社 振動デバイスおよび電子機器

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DE3265339D1 (en) * 1981-03-20 1985-09-19 Toshiba Kk Method for manufacturing semiconductor device
JPS618945A (ja) * 1984-06-25 1986-01-16 Nec Corp 半導体集積回路装置
US4571819A (en) * 1984-11-01 1986-02-25 Ncr Corporation Method for forming trench isolation structures
US4656497A (en) * 1984-11-01 1987-04-07 Ncr Corporation Trench isolation structures
US4666556A (en) * 1986-05-12 1987-05-19 International Business Machines Corporation Trench sidewall isolation by polysilicon oxidation
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JPH01222457A (ja) 1988-03-01 1989-09-05 Fujitsu Ltd 半導体装置の製造方法
US5059550A (en) * 1988-10-25 1991-10-22 Sharp Kabushiki Kaisha Method of forming an element isolating portion in a semiconductor device
US4952524A (en) * 1989-05-05 1990-08-28 At&T Bell Laboratories Semiconductor device manufacture including trench formation
CA2016449C (en) * 1989-07-28 1996-06-25 Steven J. Hillenius Planar isolation technique for integrated circuits
KR920020676A (ko) * 1991-04-09 1992-11-21 김광호 반도체 장치의 소자분리 방법
US5229316A (en) * 1992-04-16 1993-07-20 Micron Technology, Inc. Semiconductor processing method for forming substrate isolation trenches
US5433794A (en) * 1992-12-10 1995-07-18 Micron Technology, Inc. Spacers used to form isolation trenches with improved corners
JP2955459B2 (ja) * 1993-12-20 1999-10-04 株式会社東芝 半導体装置の製造方法
JPH07193121A (ja) 1993-12-27 1995-07-28 Toshiba Corp 半導体装置の製造方法
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WO1996002070A2 (en) * 1994-07-12 1996-01-25 National Semiconductor Corporation Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit
US5786263A (en) * 1995-04-04 1998-07-28 Motorola, Inc. Method for forming a trench isolation structure in an integrated circuit
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US6054343A (en) * 1998-01-26 2000-04-25 Texas Instruments Incorporated Nitride trench fill process for increasing shallow trench isolation (STI) robustness

Also Published As

Publication number Publication date
DE19748501A1 (de) 1998-10-15
KR100283021B1 (ko) 2001-04-02
CN1196574A (zh) 1998-10-21
CN1134058C (zh) 2004-01-07
JPH10340950A (ja) 1998-12-22
CN1430260A (zh) 2003-07-16
US6372604B1 (en) 2002-04-16
US6265743B1 (en) 2001-07-24
DE19748501C2 (de) 2001-08-30
CN1210780C (zh) 2005-07-13
JP3904676B2 (ja) 2007-04-11
KR100308510B1 (ko) 2001-11-07
KR19980079567A (ko) 1998-11-25

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