WO2004061945A1 - Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same - Google Patents
Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same Download PDFInfo
- Publication number
- WO2004061945A1 WO2004061945A1 PCT/US2003/035344 US0335344W WO2004061945A1 WO 2004061945 A1 WO2004061945 A1 WO 2004061945A1 US 0335344 W US0335344 W US 0335344W WO 2004061945 A1 WO2004061945 A1 WO 2004061945A1
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- WIPO (PCT)
- Prior art keywords
- trenches
- trench
- thermal oxide
- forming
- diffusion barrier
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
- H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
Definitions
- the present invention relates to trench isolation structures as usually employed in sophisticated semiconductor devices to electrically insulate neighboring circuit elements from each other, and, more particularly, to techniques allowing the adjustment of characteristics of trench isolation structures, such as corner rounding and residual stress created therein.
- the former structure provides a substantially planar surface for subsequent photolithography processes, thereby significantly improving the resolution of the photolithography process compared to the strongly varying topography of the
- LOCOS structure Although the introduction of trench isolation structures into the manufacturing process of integrated circuits significantly enhances device reliability in combination with an increased package density, certain issues arise in manufacturing trench isolation structures, especially when the dimensions of the isolation structure and the associated circuit elements approach the deep sub-micron regime. For dimensions in this order of magnitude, relatively high electrical fields may be created on sharp corners of the trench isolation structures and may therefore affect the operation of the circuit elements, such as field effect transistors and capacitors and the like, finally resulting in an increased leakage current between adjacent circuit elements.
- a trench isolation structure generally requires the employment of photolithography and anisotropic etch techniques where, in particular, upper corners of the trenches exhibit, due to the anisotropic etch process, relatively sharp corners that may not be sufficiently rounded by controlling process parameters of the etch process. Therefore, it has become standard practice to form a thermally grown oxide on inner surfaces of the trench so as to provide for an increased radius of curvature, especially of the upper corners of the isolation trenches, wherein, however, an increased thickness of the thermally grown oxide entails additional compressive stress, which in turn may adversely affect device characteristics of the adjacent circuit element. With reference to Figures la-le, the fabrication of a conventional isolation structure is described in more detail.
- a semiconductor structure 100 comprises a substrate 101, for example a semiconductor substrate, such as a silicon wafer, or a dielectric substrate bearing a semiconductor layer, such as an SOI (silicon on insulator) substrate.
- An oxide layer 102 is formed over the substrate 101, for example in the form of a silicon dioxide, followed by a further dielectric layer 103, the material composition of which may be preferably selected so as to serve as a stop layer during a CMP process required in a further advanced manufacturing stage.
- the layer 103 may be provided as a silicon nitride layer.
- a resist mask layer 104 is formed over the silicon nitride layer 103 having formed therein an opening 105, the dimensions of which substantially represent the dimensions of a trench to be formed in the substrate 101. It should be noted that, depending on the type of photolithography technique employed, the resist mask 104 may comprise an anti- reflective coating to enhance the resolution of the photolithography step.
- a typical process flow for forming the semiconductor structure 100 may include the following processes.
- the oxide layer 102 may be formed by a conventional oxidation process or may be deposited by chemical vapor deposition (CVD) techniques from appropriate precursor gases.
- the silicon nitride layer 103 is deposited, followed by applying a resist layer that is subsequently patterned by a photolithography process to form the opening 105.
- the lateral dimensions of the opening 105 may depend on the specific design of the circuit to be formed, and may require advanced photolithography techniques when, for instance, feature sizes in the range of approximately 0.2 ⁇ m and less are to be manufactured.
- Figure lb schematically shows the semiconductor structure 100 with a trench 106 formed in the silicon nitride layer 103, the oxide layer 102 and partially in the substrate 101.
- the trench 106 has bottom corners or edges 107 which exhibit a rounding or a radius of curvature that depends on the specifics of the anisotropic etch process.
- the interface between the oxide layer 102, the substrate 101 and the trench 106, as indicated by 108, will form a relatively sharp corner or edge which may not be easily rounded during the etch process due to the characteristics of the anisotropic etch process.
- sharp corners e.g., the areas 108
- respective counter measures are usually taken to round the corners 107, and especially the areas 108, so as to minimize any inadvertent impact on a circuit element manufactured near the isolation trench 106, such as a field effect transistor.
- a thermal oxide liner is grown on inner surfaces of the trench 106 in order to provide a larger radius of curvature at the areas 108 at the interface between the dielectric silicon dioxide 102 and the material of the substrate 101. It turns out, however, that growing a thermal oxide within the trench 106 and subsequently depositing a bulk oxide for filling the trench 106 with a dielectric material may result in a reduced quality of the deposited oxide having a higher etch rate adjacent to the thermal liner oxide, thereby possibly leading to the creation of notches during the removal of the silicon nitride layer 103. Consequently, a so-called "late liner" process is frequently employed, in which the bulk oxide is deposited prior to forming the thermal oxide within the trench 106.
- Figure lc schematically shows the semiconductor structure 100 with a silicon dioxide layer 109 formed over the trench 106 to an extent that the trench 106 is reliably filled at least up to the silicon nitride layer 103.
- Appropriate deposition techniques such as chemical vapor deposition with precursor gases TEOS, oxygen and ozone at a temperature range of approximately 350-650°C, may be employed to substantially fill the trench 106 without the creation of any voids therein.
- Figure Id schematically shows the semiconductor structure 100 with a thermal oxide layer 110 formed on oxidizable inner surfaces of the trench 106, wherein, particularly, the rounding at the areas 108 is significantly increased.
- the thermal oxide layer 110 may be formed by exposing the substrate 101 to an oxidizing ambient 112 at an elevated temperature, wherein the dielectric oxide material of the layer 109 is simultaneously densified.
- a thickness of the thermal oxide layer 110 may be adjusted in accordance with design requirements.
- an increased thickness of the thermal oxide layer 110 is advantageous in view of increasing the rounding, i.e., the radius of curvature, of the areas 108, it turns out, however, that a mechanical stress 111 is created within the trench 106, since the volume of the thermal oxide created in the layer 110 exceeds the volume of the consumed silicon of the substrate 101.
- the mechanical stress 111 induced by the growth of the thermal oxide layer 110 may, however, negatively affect the device characteristics of adjacent circuit elements, for example by producing lattice damage in the crystalline structure, and may even increase when high temperature anneal cycles are carried out during the further manufacturing steps. Therefore, a trade-off has to be made regarding the required degree of rounding of the areas 108 and the amount of acceptable mechanical stress 111 created by the thermal oxide layer 110. Since a plurality of different circuit elements having a different sensitivity to undesired electric fields and compressive stress are usually manufactured in an integrated circuit, the isolation trenches 106 represent a targeted compromise for the most sensitive type of circuit elements.
- CMP chemical mechanical polishing
- the thickness of the silicon nitride layer 103, acting as a CMP stop layer, is also reduced during the CMP process, wherein the initial thickness of the silicon nitride layer 103 is selected so as to substantially ensure the integrity of the substrate 101 across the entire substrate surface.
- the residual silicon nitride layer 103 and thereafter the oxide layer 102 may be removed by appropriate wet chemical etch processes (not shown).
- the present invention is directed to a technique that involves selectively forming a the ⁇ nal liner oxide on oxidizable inner surfaces of a trench structure in that one or more trench structures are covered by an oxygen diffusion barrier in the form of non-oxidizable and/or oxygen-consuming material, wherein one or more other trench structures receive a thermal liner oxide with a specified thickness.
- the masking of certain trench structures may be carried out in a way that leads to two or more different liner oxide thicknesses, and thus two or more different degrees of corner rounding and mechanical stress, so that the characteristics of the respective isolation structure may be tailored for respective circuit elements.
- a method of forming a trench isolation structure comprises forming a plurality of trenches in a substrate and covering at least one of the plurality of trenches with an oxygen diffusion barrier layer.
- a thermal oxide is selectively formed on oxidizable inner surface portions of one or more of the plurality of trenches while covering at least one of the plurality of trenches with the oxygen diffusion barrier layer.
- a method of controlling the degree of corner rounding of a trench isolation structure in a semiconductor device comprises thermally oxidizing portions of inner surfaces of a first isolation trench filled with an insulating material while covering a second isolation trench filled with the insulating material with a sacrificial oxygen diffusion barrier layer.
- a trench isolation structure in a semiconductor device comprises a plurality of trenches formed in a semiconductive material, wherein each trench has upper comers and bottom comers. An insulating material is filled in each of the trenches, wherein a radius of curvature of the upper comers of at least one of the trenches differs from that of one or more of the residual trenches.
- a trench isolation structure comprises two or more different types of isolation trenches, wherein each type has a specified thickness of a thermal oxide layer formed at an interface between a semiconductor material and an oxide thereof.
- the specified thicknesses differ from each other.
- Figures la-le schematically show cross-sectional views of a semiconductor structure containing a conventional isolation trench during various manufacturing stages
- Figures 2a-2g schematically show cross-sectional views of an isolation structure having two different types of trench isolations with differently grown thermal oxide layers in accordance with illustrative embodiments of the present invention.
- Figures 3a-3c schematically show cross-sectional views of an isolation structure having a plurality of isolation trenches, each of which includes a differently grown thermal oxide in accordance with still other illustrative embodiments of the present invention.
- a semiconductor structure 200 comprises a substrate 201, which may be a semiconductor substrate, such as a silicon substrate, that is appropriate for the formation of semiconductor- based circuit elements.
- the substrate 201 may comprise germanium, gallium arsenide, or various types of II- VI or III-V semiconductors.
- the substrate 201 is representative of any appropriate substrate that includes at least a layer of semiconductive material in which circuit elements may be formed.
- the substrate 201 may represent an SOI substrate in which a silicon layer is commonly provided above an insulating layer, typically a silicon dioxide layer, which is also referred to as buried oxide.
- the substrate 201 will be referred to as a silicon substrate, which forms upon exposure to an oxidizing ambient silicon dioxide.
- the semiconductor structure 200 further comprises a trench isolation structure 220, which in the present example is represented by a first trench 206a and a second trench 206b, which may differ in their dimensions in accordance with design requirements. It should be appreciated that the trenches 206a, 206b may typically represent isolation trenches at very different areas of the substrate 201 or, as in the example shown in Figure 2a, may represent isolation trenches related to adjacent circuit elements formed therebetween.
- An oxide layer 202 is formed above the substrate 201 followed by a further dielectric layer 203 having characteristics that allow the layer 203 to serve as a stop layer in a subsequent CMP process.
- the layer 203 may, for example, be comprised of silicon nitride.
- a layer of a dielectric oxide material 209 is formed above the layer 203 so as to substantially completely fill the trenches 206a, 206b.
- the trenches 206a, 206b have upper comer areas indicated by 208a, 208b, respectively.
- a thermal treatment may be carried out in an inert ambient containing, for example, nitrogen and/or argon and the like, to density the dielectric material 209.
- a temperature of the thermal treatment may range from approximately 700-1100°C.
- Figure 2b schematically shows the semiconductor structure 200 with a sacrificial mask layer 221 acting as an oxygen diffusion barrier and formed over a portion of the trench isolation structure 220 such that the trench 206a is covered by the mask layer 221.
- the mask layer 221 may be comprised of a non-oxidizable material, i.e., of a material that substantially avoids oxygen donation and/or diffusion to an adjacent material layer when exposed to an oxidizing ambient 202 at elevated temperatures.
- the mask layer 221 may be comprised of silicon nitride.
- Another appropriate material for forming the mask layer 221 may include silicon oxynitride (SiON).
- the mask layer 221 is substantially comprised of an oxidizable material, such as polysilicon, which substantially consumes the oxygen penetrating the mask layer 221, thereby substantially avoiding the diffusion of oxygen into the underlying trench isolation structure 220.
- the thickness of the mask layer 221, if comprised of an oxidizable material, is then selected so as to substantially prevent oxygen diffusion during the entire exposure to an oxidizing ambient 212. Since the oxidation process of a plurality of materials is well understood, an appropriate thickness of the mask layer 221 may be readily determined in advance.
- a thermal oxide layer 210b forms on oxidizable inner surface portions of the trench 206b and leads to an increased rounding, i.e., an increased radius of curvature, at the areas 208b.
- the process parameters, such as temperature, duration, oxygen concentration and the like, in establishing the oxidizing ambient 212 may be adjusted to obtain a required thickness and, thus, a required degree of comer rounding at the areas 208b such that, in combination with a second step of oxidizing the trench 206b, as will be described with reference to Figure 2c, a final degree of comer rounding is achieved.
- the growth rate of thermal oxide in silicon is well known, the thickness of and the comer rounding at the areas 208b may be readily controlled by selecting the duration of the oxidization, once the structural characteristics of the structure 200, i.e., temperature, oxygen concentration, pressure and the like, are set.
- the growth rate for a specified structure may be determined by experiment.
- Figure 2c schematically shows the semiconductor structure 200 with the sacrificial mask layer 221 removed.
- the semiconductor structure 200 is exposed to a further oxidizing ambient 213 to produce a thermal oxide layer 210a within the trench 206a, while further increasing the thickness of the thermal oxide layer 210b within the trench 206b.
- the process parameters used during exposing the semiconductor structure 200 to the oxidizing ambients 212, 213 are selected such that the thermal oxide layer 210a meets the requirements for the circuit element related therewith. For example, merely a low amount of mechanical stress is created by the thermal oxide layer 210a, while at the same time a required thick thermal oxide layer 210b leads to a reduced field strength due to the increased radius of curvature of the areas 208b.
- a thickness of the thermal oxide layer 210a may be adjusted to a thickness in the range of approximately 1-30 nm, whereas a thickness of the thermal oxide layer 210b may exceed that of the thermal oxide layer 210a by a predefined amount that may be adjusted by correspondingly selecting the process parameters of the oxidizing ambient 213.
- Figure 2d schematically shows a further illustrative embodiment wherein, starting from the semiconductor structure 200 as shown in Figure 2a, alternatively or in addition to a heat treatment in an inert ambient, an oxidizing ambient 214 is established to provide substantially identical thermal oxide layers 210a, 210b within the trenches 206a, 206b.
- the dielectric oxide layer 209 may simultaneously be densified so that a preceding heat treatment may be obsolete or a duration thereof may be significantly shortened.
- the process parameters of the oxidizing ambient 214 are selected such that a thickness of the thermal oxide layer 210b, and thus a degree of comer rounding of the areas 208b, conform to the specified circuit element to be formed adjacent to the isolation trench 206b.
- Figure 2e schematically shows the semiconductor structure 200 after the formation of the sacrificial non-oxidizable mask layer 221 that covers the trench 206b, while exposing the trench 206a to a further oxidizing ambient 215.
- the thickness of the thermal oxide layer 210a is increased until a specified degree of comer rounding at the areas 208a is obtained.
- the sequence shown in Figures 2d and 2e is timely inverted to the sequence shown in Figures 2b and 2c.
- FIG. 2f schematically shows the semiconductor structure 200 in accordance with a further illustrative embodiment of the present invention.
- the semiconductor structure 200 comprises the same components and parts as already shown and described in Figure 2d, except for the dielectric oxide layer 209.
- the semiconductor structure 200 is exposed to the oxidizing ambient 214 and the thermal oxide layers 210a, 210b of substantially identical characteristics are formed within the trenches 206a, 206b.
- This approach may be selected if concerns exist regarding the placement of the dielectric oxide layer 209 (not shown in Figure 2f) directly on a crystal lattice that may be damaged by preceding implantation steps without any thermal oxide "curing" and oxide densification.
- the dielectric oxide layer 209 may be deposited so as to fill the trenches 206a and 206b.
- Figure 2g schematically shows the semiconductor structure 200 after deposition of the dielectric oxide layer 209 and the formation of the sacrificial mask layer 221 covering the trench 206b.
- the semiconductor structure 200 is exposed to the oxidizing ambient 215 such that the thermal oxide layer 210a is increased to a required final thickness, and thus a final required comer rounding, of the areas 208a.
- the process parameters of the oxidizing ambient 214 may be selected so as to obtain the required characteristics of the thermal oxide layer 210b without any further oxidization of the trench 206b, or an additional mask may be formed or, alternatively, an oxidation step may be carried out without any mask after the deposition of the dielectric oxide layer 209 so as to achieve the required characteristics of the thermal oxide layer 210b.
- a semiconductor structure 300 comprises a trench isolation structure 320, which in the present example is represented by three isolation trenches 306a, 306b, 306c which are formed in a substrate 301.
- the number of trenches is illustrative only and the isolation structure 320 may comprise an arbitrary number of isolation trenches that are to receive different types of grown oxide layers.
- An oxide layer 302 followed by a top layer 303 and a dielectric oxide layer 309 are formed over the substrate 301.
- a sacrificial mask layer 321 is formed over the dielectric oxide layer 309 so as to cover the trenches 306a, 306b and expose the trench 306c.
- the same criteria apply as already pointed out with reference to Figures la-le and 2a-2g.
- the semiconductor structure 300 is exposed to an oxidizing ambient 312 to create a thermal oxide layer 310c within the trench 306c.
- Figure 3b shows the semiconductor structure 300 with the sacrificial mask layer 321 removed and with a second sacrificial mask layer 322 formed over the structure 300 so as to expose the trenches 306b, 306c while covering the trench 306a.
- the structure 300 is exposed to an oxidizing ambient 314 to form a thermal oxide layer 310b within the trench 306b while increasing a thickness of the thermal oxide layer 310c.
- Figure 3c shows the structure 300 with the trenches 306a, 306b, 306c exposed to an oxidizing ambient 315 to form a thermal oxide layer 310a within the trench 306a, while increasing the thickness of the thermal oxide layers 310b, 310c.
- the same criteria apply as previously explained with reference to the preceding illustrative embodiments.
- the sequence shown in Figures 3a-3c may be inverted so that the trenches 306a, 306b, 306c are initially unmasked and receive a substantially identical thermal oxide layer. The initial oxidation may be preceded by a heat treatment for densification of the dielectric oxide layer 309 as is described earlier.
- trench 306a is masked ( Figure 3b) and thereafter trenches 306a, 306b are masked ( Figure 3a) to obtain the required different thicknesses, and thus comer rounding, at the areas 308a, 308b, 308c of the trench isolation structure 320.
- any of the process sequences described with reference to Figures 2a-2e may also be employed with the embodiments described with reference to Figures 3a-3c. That is, in some embodiments, a thermal oxide layer of required thickness may be formed prior to the deposition of the dielectric oxide layer 309. Thereafter any of the above-described sequences in masking one or more of the trenches 306a, 306b, 306c may be applied to form different types of isolation trenches.
- the present invention enables the formation of trench isolation structures with different types of thermally grown oxide liners in different isolation trenches by using well-established deposition methods and non-critical photolithography techniques to provide electrical and mechanical characteristics of the isolation trenches, which are specifically adapted to the related circuit elements.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
Description
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03768715A EP1573801A1 (en) | 2002-12-19 | 2003-11-05 | Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same |
JP2005508532A JP2006525652A (en) | 2002-12-19 | 2003-11-05 | Trench insulation structure having different rounding degree of semiconductor device corner and manufacturing method thereof |
AU2003291323A AU2003291323A1 (en) | 2002-12-19 | 2003-11-05 | Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10259728.6 | 2002-12-19 | ||
DE10259728A DE10259728B4 (en) | 2002-12-19 | 2002-12-19 | A method of fabricating a trench isolation structure and method of controlling a degree of edge rounding of a trench isolation structure in a semiconductor device |
US10/444,191 US6943088B2 (en) | 2002-12-19 | 2003-05-23 | Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding |
US10/444,191 | 2003-05-23 |
Publications (1)
Publication Number | Publication Date |
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WO2004061945A1 true WO2004061945A1 (en) | 2004-07-22 |
Family
ID=32714758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/035344 WO2004061945A1 (en) | 2002-12-19 | 2003-11-05 | Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1573801A1 (en) |
JP (1) | JP2006525652A (en) |
KR (1) | KR20050084434A (en) |
AU (1) | AU2003291323A1 (en) |
WO (1) | WO2004061945A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4671970A (en) * | 1986-02-05 | 1987-06-09 | Ncr Corporation | Trench filling and planarization process |
US6251734B1 (en) * | 1998-07-01 | 2001-06-26 | Motorola, Inc. | Method for fabricating trench isolation and trench substrate contact |
US20020070430A1 (en) * | 2000-12-09 | 2002-06-13 | Samsung Electronics Co., Ltd. | Semiconductor device having shallow trench isolation structure and method for manufacturing the same |
US20020086495A1 (en) * | 2000-12-28 | 2002-07-04 | Yoo Jae-Yoon | Method of fabricating a trench isolation structure having sidewall oxide layers with different thicknesses |
US6518146B1 (en) * | 2002-01-09 | 2003-02-11 | Motorola, Inc. | Semiconductor device structure and method for forming |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02118937A (en) * | 1988-10-26 | 1990-05-07 | Seiko Epson Corp | Optical pickup |
JPH07130725A (en) * | 1993-10-29 | 1995-05-19 | Sony Corp | Semiconductor device and method of forming its element isolating film |
KR100195208B1 (en) * | 1996-04-15 | 1999-06-15 | 윤종용 | Method of forming an element isolation region in a semiconductor device |
JP3904676B2 (en) * | 1997-04-11 | 2007-04-11 | 株式会社ルネサステクノロジ | Method for manufacturing trench type element isolation structure and trench type element isolation structure |
-
2003
- 2003-11-05 WO PCT/US2003/035344 patent/WO2004061945A1/en active Application Filing
- 2003-11-05 EP EP03768715A patent/EP1573801A1/en not_active Withdrawn
- 2003-11-05 KR KR1020057011501A patent/KR20050084434A/en not_active Application Discontinuation
- 2003-11-05 JP JP2005508532A patent/JP2006525652A/en active Pending
- 2003-11-05 AU AU2003291323A patent/AU2003291323A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4671970A (en) * | 1986-02-05 | 1987-06-09 | Ncr Corporation | Trench filling and planarization process |
US6251734B1 (en) * | 1998-07-01 | 2001-06-26 | Motorola, Inc. | Method for fabricating trench isolation and trench substrate contact |
US20020070430A1 (en) * | 2000-12-09 | 2002-06-13 | Samsung Electronics Co., Ltd. | Semiconductor device having shallow trench isolation structure and method for manufacturing the same |
US20020086495A1 (en) * | 2000-12-28 | 2002-07-04 | Yoo Jae-Yoon | Method of fabricating a trench isolation structure having sidewall oxide layers with different thicknesses |
US6518146B1 (en) * | 2002-01-09 | 2003-02-11 | Motorola, Inc. | Semiconductor device structure and method for forming |
Also Published As
Publication number | Publication date |
---|---|
EP1573801A1 (en) | 2005-09-14 |
JP2006525652A (en) | 2006-11-09 |
AU2003291323A1 (en) | 2004-07-29 |
KR20050084434A (en) | 2005-08-26 |
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