CN1194414C - 纵型半导体器件 - Google Patents

纵型半导体器件 Download PDF

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Publication number
CN1194414C
CN1194414C CNB021425884A CN02142588A CN1194414C CN 1194414 C CN1194414 C CN 1194414C CN B021425884 A CNB021425884 A CN B021425884A CN 02142588 A CN02142588 A CN 02142588A CN 1194414 C CN1194414 C CN 1194414C
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CN
China
Prior art keywords
mentioned
layer
drift layer
impurity concentration
resistance
Prior art date
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Expired - Fee Related
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CNB021425884A
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English (en)
Chinese (zh)
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CN1402360A (zh
Inventor
小野昇太郎
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Toshiba Corp
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Toshiba Corp
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Publication of CN1402360A publication Critical patent/CN1402360A/zh
Application granted granted Critical
Publication of CN1194414C publication Critical patent/CN1194414C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB021425884A 2001-06-29 2002-06-28 纵型半导体器件 Expired - Fee Related CN1194414C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001198552A JP4421144B2 (ja) 2001-06-29 2001-06-29 半導体装置
JP198552/2001 2001-06-29

Publications (2)

Publication Number Publication Date
CN1402360A CN1402360A (zh) 2003-03-12
CN1194414C true CN1194414C (zh) 2005-03-23

Family

ID=19035983

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021425884A Expired - Fee Related CN1194414C (zh) 2001-06-29 2002-06-28 纵型半导体器件

Country Status (5)

Country Link
US (2) US6787848B2 (cg-RX-API-DMAC7.html)
EP (1) EP1271655A3 (cg-RX-API-DMAC7.html)
JP (1) JP4421144B2 (cg-RX-API-DMAC7.html)
KR (1) KR100693319B1 (cg-RX-API-DMAC7.html)
CN (1) CN1194414C (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109935517A (zh) * 2017-12-15 2019-06-25 深圳尚阳通科技有限公司 Sgt器件及其制造方法

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CN109920778B (zh) * 2019-03-27 2024-02-06 北京燕东微电子科技有限公司 半导体结构及其测试方法
CN111162009B (zh) * 2020-02-28 2021-08-24 电子科技大学 一种低导通电阻低压分离栅mos器件的制造方法
CN111354642B (zh) * 2020-05-13 2021-09-14 电子科技大学 一种低导通电阻低压槽栅mos器件的制造方法
JP7394038B2 (ja) * 2020-09-11 2023-12-07 株式会社東芝 半導体装置
JP7739727B2 (ja) * 2021-03-09 2025-09-17 住友電気工業株式会社 炭化珪素エピタキシャル基板
CN113224166A (zh) * 2021-04-25 2021-08-06 华虹半导体(无锡)有限公司 沟槽型功率mosfet器件及工艺方法
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CN109935517A (zh) * 2017-12-15 2019-06-25 深圳尚阳通科技有限公司 Sgt器件及其制造方法
CN109935517B (zh) * 2017-12-15 2020-11-27 深圳尚阳通科技有限公司 Sgt器件及其制造方法

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Publication number Publication date
US20030001203A1 (en) 2003-01-02
KR20030003089A (ko) 2003-01-09
JP4421144B2 (ja) 2010-02-24
US20040195619A1 (en) 2004-10-07
CN1402360A (zh) 2003-03-12
US7045426B2 (en) 2006-05-16
EP1271655A2 (en) 2003-01-02
KR100693319B1 (ko) 2007-03-13
US6787848B2 (en) 2004-09-07
EP1271655A3 (en) 2004-03-17
JP2003017696A (ja) 2003-01-17

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