CN1638144A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1638144A CN1638144A CNA200410061545XA CN200410061545A CN1638144A CN 1638144 A CN1638144 A CN 1638144A CN A200410061545X A CNA200410061545X A CN A200410061545XA CN 200410061545 A CN200410061545 A CN 200410061545A CN 1638144 A CN1638144 A CN 1638144A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000012535 impurity Substances 0.000 claims description 71
- 238000009413 insulation Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 54
- 230000005684 electric field Effects 0.000 description 26
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004969 ion scattering spectroscopy Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003430603 | 2003-12-25 | ||
JP2003430603A JP4813762B2 (ja) | 2003-12-25 | 2003-12-25 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1638144A true CN1638144A (zh) | 2005-07-13 |
CN100385679C CN100385679C (zh) | 2008-04-30 |
Family
ID=34697623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410061545XA Expired - Fee Related CN100385679C (zh) | 2003-12-25 | 2004-12-24 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7345337B2 (zh) |
JP (1) | JP4813762B2 (zh) |
CN (1) | CN100385679C (zh) |
DE (1) | DE102004058021A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157382A (zh) * | 2011-03-09 | 2011-08-17 | 无锡邦普氿顺微电子有限公司 | 一种超结形成方法 |
CN102254804A (zh) * | 2011-08-08 | 2011-11-23 | 上海宏力半导体制造有限公司 | 沟槽型功率mos晶体管的制备方法 |
CN102856382A (zh) * | 2011-06-29 | 2013-01-02 | 株式会社电装 | 碳化硅半导体器件 |
CN103035677A (zh) * | 2011-09-30 | 2013-04-10 | 上海华虹Nec电子有限公司 | 超级结结构、超级结mos晶体管及其制造方法 |
CN103151376A (zh) * | 2011-12-07 | 2013-06-12 | Nxp股份有限公司 | 沟槽-栅极resurf半导体器件及其制造方法 |
CN103633116B (zh) * | 2012-08-20 | 2017-02-15 | 朱江 | 一种电荷补偿结构半导体晶片及其制备方法 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5074671B2 (ja) | 2005-04-28 | 2012-11-14 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP4930894B2 (ja) * | 2005-05-13 | 2012-05-16 | サンケン電気株式会社 | 半導体装置 |
JP5015488B2 (ja) * | 2005-09-07 | 2012-08-29 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20080197381A1 (en) * | 2007-02-15 | 2008-08-21 | Nec Electronics Corporation | Semiconductor device and method for manufacturing same |
JP2008218711A (ja) * | 2007-03-05 | 2008-09-18 | Renesas Technology Corp | 半導体装置およびその製造方法、ならびに電源装置 |
JP5196980B2 (ja) | 2007-12-10 | 2013-05-15 | 株式会社東芝 | 半導体装置 |
JP5317560B2 (ja) * | 2008-07-16 | 2013-10-16 | 株式会社東芝 | 電力用半導体装置 |
JP4791572B2 (ja) * | 2009-12-21 | 2011-10-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN101789435B (zh) * | 2009-12-24 | 2011-11-16 | 中国科学院上海微系统与信息技术研究所 | 一种基于垂直栅soi cmos器件的超结结构及其制作方法 |
JP2010283368A (ja) * | 2010-07-26 | 2010-12-16 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2012059931A (ja) * | 2010-09-09 | 2012-03-22 | Toshiba Corp | 半導体装置 |
US20150171169A1 (en) * | 2012-05-31 | 2015-06-18 | National Institute Of Advanced Industrial Science And Technology | Semiconductor device |
JP5961563B2 (ja) | 2013-01-25 | 2016-08-02 | 株式会社豊田中央研究所 | 半導体装置の製造方法 |
JP6168513B2 (ja) * | 2013-05-13 | 2017-07-26 | ローム株式会社 | 半導体装置およびその製造方法 |
JP2017045911A (ja) | 2015-08-28 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2017183419A (ja) * | 2016-03-29 | 2017-10-05 | ローム株式会社 | 半導体装置 |
US10439056B2 (en) * | 2016-03-31 | 2019-10-08 | Shindengen Electric Manufacturing Co., Ltd. | Power semiconductor device and method of manufacturing power semiconductor device |
JP7052330B2 (ja) * | 2017-12-13 | 2022-04-12 | 富士電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
CN113808945A (zh) * | 2020-06-12 | 2021-12-17 | 芯恩(青岛)集成电路有限公司 | 超结功率器件及其制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688725A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance |
WO1997007548A1 (en) * | 1995-08-21 | 1997-02-27 | Siliconix Incorporated | Low voltage short channel trench dmos transistor |
JP3988262B2 (ja) * | 1998-07-24 | 2007-10-10 | 富士電機デバイステクノロジー株式会社 | 縦型超接合半導体素子およびその製造方法 |
JP3221489B2 (ja) * | 1999-03-26 | 2001-10-22 | サンケン電気株式会社 | 絶縁ゲート型電界効果トランジスタ |
JP4816834B2 (ja) * | 1999-05-21 | 2011-11-16 | 日産自動車株式会社 | 半導体装置 |
US6593619B1 (en) * | 1999-06-03 | 2003-07-15 | General Semiconductor, Inc. | High voltage power MOSFET having low on-resistance |
JP4965756B2 (ja) | 2000-04-12 | 2012-07-04 | 株式会社東芝 | 半導体装置 |
JP4240752B2 (ja) * | 2000-05-01 | 2009-03-18 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
DE10024480B4 (de) * | 2000-05-18 | 2006-02-16 | Infineon Technologies Ag | Kompensationsbauelement mit verbesserter Robustheit |
US6479352B2 (en) * | 2000-06-02 | 2002-11-12 | General Semiconductor, Inc. | Method of fabricating high voltage power MOSFET having low on-resistance |
US6768171B2 (en) * | 2000-11-27 | 2004-07-27 | Power Integrations, Inc. | High-voltage transistor with JFET conduction channels |
DE10061528C1 (de) * | 2000-12-11 | 2002-07-25 | Infineon Technologies Ag | Mittels Feldeffekt steuerbares Halbleiterbauelement |
US6713813B2 (en) * | 2001-01-30 | 2004-03-30 | Fairchild Semiconductor Corporation | Field effect transistor having a lateral depletion structure |
DE10120656C2 (de) * | 2001-04-27 | 2003-07-10 | Infineon Technologies Ag | Halbleiterbauelement mit erhöhter Avalanche-Festigkeit |
JP2003086800A (ja) * | 2001-09-12 | 2003-03-20 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3652322B2 (ja) | 2002-04-30 | 2005-05-25 | Necエレクトロニクス株式会社 | 縦型mosfetとその製造方法 |
US7161208B2 (en) * | 2002-05-14 | 2007-01-09 | International Rectifier Corporation | Trench mosfet with field relief feature |
-
2003
- 2003-12-25 JP JP2003430603A patent/JP4813762B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-01 DE DE102004058021A patent/DE102004058021A1/de not_active Withdrawn
- 2004-12-22 US US11/017,754 patent/US7345337B2/en active Active
- 2004-12-24 CN CNB200410061545XA patent/CN100385679C/zh not_active Expired - Fee Related
-
2006
- 2006-01-11 US US11/329,056 patent/US7361953B2/en active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157382A (zh) * | 2011-03-09 | 2011-08-17 | 无锡邦普氿顺微电子有限公司 | 一种超结形成方法 |
CN102856382A (zh) * | 2011-06-29 | 2013-01-02 | 株式会社电装 | 碳化硅半导体器件 |
CN102254804A (zh) * | 2011-08-08 | 2011-11-23 | 上海宏力半导体制造有限公司 | 沟槽型功率mos晶体管的制备方法 |
CN103035677A (zh) * | 2011-09-30 | 2013-04-10 | 上海华虹Nec电子有限公司 | 超级结结构、超级结mos晶体管及其制造方法 |
CN103035677B (zh) * | 2011-09-30 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | 超级结结构、超级结mos晶体管及其制造方法 |
CN103151376A (zh) * | 2011-12-07 | 2013-06-12 | Nxp股份有限公司 | 沟槽-栅极resurf半导体器件及其制造方法 |
US9735254B2 (en) | 2011-12-07 | 2017-08-15 | Nexperia B.V. | Trench-gate RESURF semiconductor device and manufacturing method |
CN103633116B (zh) * | 2012-08-20 | 2017-02-15 | 朱江 | 一种电荷补偿结构半导体晶片及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US7361953B2 (en) | 2008-04-22 |
JP4813762B2 (ja) | 2011-11-09 |
CN100385679C (zh) | 2008-04-30 |
US20060108634A1 (en) | 2006-05-25 |
US7345337B2 (en) | 2008-03-18 |
JP2005191268A (ja) | 2005-07-14 |
DE102004058021A1 (de) | 2005-07-28 |
US20050139909A1 (en) | 2005-06-30 |
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CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corp. Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080430 Termination date: 20211224 |