CN1658400A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN1658400A CN1658400A CN2005100040372A CN200510004037A CN1658400A CN 1658400 A CN1658400 A CN 1658400A CN 2005100040372 A CN2005100040372 A CN 2005100040372A CN 200510004037 A CN200510004037 A CN 200510004037A CN 1658400 A CN1658400 A CN 1658400A
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- type
- semiconductor regions
- groove
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 125
- 238000000034 method Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 claims abstract description 28
- 239000012535 impurity Substances 0.000 claims description 56
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 230000008676 import Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 19
- 239000010703 silicon Substances 0.000 abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 230000005684 electric field Effects 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 230000003014 reinforcing effect Effects 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 28
- 150000002500 ions Chemical class 0.000 description 14
- 108091006146 Channels Proteins 0.000 description 11
- 239000010410 layer Substances 0.000 description 9
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- -1 boron ion Chemical class 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004038878A JP4091921B2 (ja) | 2004-02-16 | 2004-02-16 | 半導体装置及びその製造方法 |
JP2004038878 | 2004-02-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1658400A true CN1658400A (zh) | 2005-08-24 |
CN100461450C CN100461450C (zh) | 2009-02-11 |
Family
ID=34836332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100040372A Expired - Fee Related CN100461450C (zh) | 2004-02-16 | 2005-01-10 | 半导体装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7626229B2 (zh) |
JP (1) | JP4091921B2 (zh) |
CN (1) | CN100461450C (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101312209B (zh) * | 2007-05-22 | 2010-09-29 | 海力士半导体有限公司 | 半导体装置及其制造方法 |
CN101894866A (zh) * | 2010-07-08 | 2010-11-24 | 复旦大学 | 凹陷沟道的碰撞电离型场效应晶体管及其制造方法 |
CN103094294A (zh) * | 2009-12-03 | 2013-05-08 | 索尼公司 | 成像元件和相机系统 |
WO2013067888A1 (zh) * | 2011-11-08 | 2013-05-16 | 无锡华润上华半导体有限公司 | 沟槽型绝缘栅双极型晶体管及其制备方法 |
CN103165669A (zh) * | 2011-12-09 | 2013-06-19 | 上海华虹Nec电子有限公司 | 沟槽功率mos器件及其制造方法 |
CN103250254A (zh) * | 2011-05-27 | 2013-08-14 | 新电元工业株式会社 | 沟槽栅极功率半导体装置及其制造方法 |
CN103325829A (zh) * | 2012-03-22 | 2013-09-25 | 株式会社东芝 | 半导体装置及其制造方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008042166A (ja) * | 2006-07-12 | 2008-02-21 | Matsushita Electric Ind Co Ltd | 縦型ゲート半導体装置及びその製造方法 |
KR101481708B1 (ko) | 2008-11-21 | 2015-01-12 | 삼성전자주식회사 | 리세스 채널 트랜지스터 및 이의 제조방법 |
JP5740108B2 (ja) | 2010-07-16 | 2015-06-24 | 株式会社東芝 | 半導体装置 |
JP6700648B2 (ja) | 2012-10-18 | 2020-05-27 | 富士電機株式会社 | 半導体装置の製造方法 |
WO2014102916A1 (ja) * | 2012-12-26 | 2014-07-03 | 株式会社日立製作所 | 炭化珪素半導体装置 |
CN104347397B (zh) * | 2013-07-23 | 2018-02-06 | 无锡华润上华科技有限公司 | 注入增强型绝缘栅双极型晶体管的制造方法 |
JP6365165B2 (ja) * | 2014-09-18 | 2018-08-01 | 富士電機株式会社 | 半導体装置の製造方法 |
EP3863066A1 (en) * | 2020-02-06 | 2021-08-11 | Infineon Technologies Austria AG | Transistor device and method of fabricating a gate of a transistor device |
CN113053752A (zh) | 2020-03-17 | 2021-06-29 | 台湾积体电路制造股份有限公司 | 半导体器件及其制造方法 |
DE102020112522A1 (de) | 2020-03-17 | 2021-09-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren dafür |
US20230008858A1 (en) * | 2021-07-08 | 2023-01-12 | Applied Materials, Inc. | Gradient doping epitaxy in superjunction to improve breakdown voltage |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2837014B2 (ja) * | 1992-02-17 | 1998-12-14 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JPH0653514A (ja) | 1992-08-03 | 1994-02-25 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
JP3291957B2 (ja) | 1995-02-17 | 2002-06-17 | 富士電機株式会社 | 縦型トレンチmisfetおよびその製造方法 |
JPH09205204A (ja) | 1996-01-25 | 1997-08-05 | Nippon Inter Electronics Corp | 絶縁ゲート型半導体装置 |
JP3502531B2 (ja) | 1997-08-28 | 2004-03-02 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US6084264A (en) | 1998-11-25 | 2000-07-04 | Siliconix Incorporated | Trench MOSFET having improved breakdown and on-resistance characteristics |
JP4091242B2 (ja) * | 1999-10-18 | 2008-05-28 | セイコーインスツル株式会社 | 縦形mosトランジスタ及びその製造方法 |
JP4371521B2 (ja) * | 2000-03-06 | 2009-11-25 | 株式会社東芝 | 電力用半導体素子およびその製造方法 |
JP4635304B2 (ja) * | 2000-07-12 | 2011-02-23 | 富士電機システムズ株式会社 | 双方向超接合半導体素子およびその製造方法 |
US6445037B1 (en) | 2000-09-28 | 2002-09-03 | General Semiconductor, Inc. | Trench DMOS transistor having lightly doped source structure |
US6756273B2 (en) * | 2001-03-12 | 2004-06-29 | Semiconductor Components Industries, L.L.C. | Semiconductor component and method of manufacturing |
JP4225711B2 (ja) * | 2001-06-29 | 2009-02-18 | 株式会社東芝 | 半導体素子及びその製造方法 |
US7291884B2 (en) | 2001-07-03 | 2007-11-06 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide |
US6569738B2 (en) | 2001-07-03 | 2003-05-27 | Siliconix, Inc. | Process for manufacturing trench gated MOSFET having drain/drift region |
US6674124B2 (en) * | 2001-11-15 | 2004-01-06 | General Semiconductor, Inc. | Trench MOSFET having low gate charge |
JP4723816B2 (ja) | 2003-12-24 | 2011-07-13 | 株式会社豊田中央研究所 | 半導体装置 |
-
2004
- 2004-02-16 JP JP2004038878A patent/JP4091921B2/ja not_active Expired - Lifetime
-
2005
- 2005-01-10 US US11/030,945 patent/US7626229B2/en not_active Expired - Fee Related
- 2005-01-10 CN CNB2005100040372A patent/CN100461450C/zh not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101312209B (zh) * | 2007-05-22 | 2010-09-29 | 海力士半导体有限公司 | 半导体装置及其制造方法 |
CN103094294A (zh) * | 2009-12-03 | 2013-05-08 | 索尼公司 | 成像元件和相机系统 |
CN103094294B (zh) * | 2009-12-03 | 2018-01-05 | 索尼半导体解决方案公司 | 成像元件和相机系统 |
CN101894866A (zh) * | 2010-07-08 | 2010-11-24 | 复旦大学 | 凹陷沟道的碰撞电离型场效应晶体管及其制造方法 |
CN103250254A (zh) * | 2011-05-27 | 2013-08-14 | 新电元工业株式会社 | 沟槽栅极功率半导体装置及其制造方法 |
CN103250254B (zh) * | 2011-05-27 | 2016-07-06 | 新电元工业株式会社 | 沟槽栅极功率半导体装置及其制造方法 |
WO2013067888A1 (zh) * | 2011-11-08 | 2013-05-16 | 无锡华润上华半导体有限公司 | 沟槽型绝缘栅双极型晶体管及其制备方法 |
CN103165669A (zh) * | 2011-12-09 | 2013-06-19 | 上海华虹Nec电子有限公司 | 沟槽功率mos器件及其制造方法 |
CN103325829A (zh) * | 2012-03-22 | 2013-09-25 | 株式会社东芝 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7626229B2 (en) | 2009-12-01 |
JP4091921B2 (ja) | 2008-05-28 |
CN100461450C (zh) | 2009-02-11 |
JP2005229066A (ja) | 2005-08-25 |
US20050179082A1 (en) | 2005-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1658400A (zh) | 半导体装置及其制造方法 | |
CN1251330C (zh) | 半导体装置及其制造方法 | |
JP4225711B2 (ja) | 半導体素子及びその製造方法 | |
JP3742400B2 (ja) | 半導体装置及びその製造方法 | |
CN1282253C (zh) | 具有小袋的半导体器件及其制造 | |
CN1726596A (zh) | 具有注入漏漂移区的沟槽金属氧化物半导体场效应晶体管及其制造方法 | |
CN1731588A (zh) | 半导体装置及其制造方法 | |
US20090140327A1 (en) | Semiconductor device and manufacturing method of the same | |
CN1815739A (zh) | 半导体器件及其制作方法 | |
CN1599045A (zh) | 具有横向漂移区掺杂剂分布的dmos晶体管的制造方法 | |
CN1155764A (zh) | 高压金属氧化物硅场效应晶体管(mosfet)结构及其制造方法 | |
CN1738057A (zh) | 具有增强的屏蔽结构的金属氧化物半导体器件 | |
CN1638144A (zh) | 半导体器件及其制造方法 | |
CN1761071A (zh) | 半导体器件及其制造方法 | |
CN1494742A (zh) | 半导体器件及其制造方法 | |
CN1649172A (zh) | 半导体器件及其制造方法 | |
CN1848437A (zh) | 半导体装置及其制造方法 | |
CN1823424A (zh) | 半导体装置制造方法和半导体装置 | |
CN1223007C (zh) | 半导体装置及其制造方法 | |
CN1606173A (zh) | 半导体装置及其制造方法 | |
CN106057905A (zh) | 沟槽栅场效应晶体管及制造方法 | |
CN1258818C (zh) | 半导体器件及其制造方法 | |
CN1812060A (zh) | 半导体器件的制造方法 | |
CN1606171A (zh) | 半导体器件及其制作方法 | |
CN1280917C (zh) | 半导体装置及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: KELAIBO INNOVATION CO., LTD. Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Effective date: 20141210 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP02 | Change in the address of a patent holder |
Address after: Osaka Patentee after: Matsushita Electric Industrial Co.,Ltd. Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20141210 Address after: California, USA Patentee after: Craib Innovations Ltd. Address before: Osaka Patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090211 Termination date: 20170110 |
|
CF01 | Termination of patent right due to non-payment of annual fee |