CN1165987C - 具有元件分离绝缘膜的半导体装置的制造方法 - Google Patents
具有元件分离绝缘膜的半导体装置的制造方法 Download PDFInfo
- Publication number
- CN1165987C CN1165987C CNB001090992A CN00109099A CN1165987C CN 1165987 C CN1165987 C CN 1165987C CN B001090992 A CNB001090992 A CN B001090992A CN 00109099 A CN00109099 A CN 00109099A CN 1165987 C CN1165987 C CN 1165987C
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- CN
- China
- Prior art keywords
- film
- oxidation
- element separating
- separating insulation
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
Abstract
Description
元件分离氧化膜的减量 | 模样工序数 | 其他追加工序数 | |
现有例 | 1080 | 1次 | 0次 |
实施例1 | 360 | 2次 | 氮化蚀刻2次 |
实施例2 | 864 | 2次 | 0次 |
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP161682/1999 | 1999-06-08 | ||
JP11161682A JP2000349164A (ja) | 1999-06-08 | 1999-06-08 | 素子分離絶縁膜を有する半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1276626A CN1276626A (zh) | 2000-12-13 |
CN1165987C true CN1165987C (zh) | 2004-09-08 |
Family
ID=15739853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001090992A Expired - Fee Related CN1165987C (zh) | 1999-06-08 | 2000-06-07 | 具有元件分离绝缘膜的半导体装置的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6380020B1 (zh) |
JP (1) | JP2000349164A (zh) |
KR (1) | KR20010007278A (zh) |
CN (1) | CN1165987C (zh) |
TW (1) | TW480671B (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6331492B2 (en) * | 1997-12-31 | 2001-12-18 | Texas Instruments Incorporated | Nitridation for split gate multiple voltage devices |
JP4712207B2 (ja) * | 2000-07-21 | 2011-06-29 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2002313941A (ja) * | 2001-04-12 | 2002-10-25 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2002343879A (ja) * | 2001-05-15 | 2002-11-29 | Nec Corp | 半導体装置及びその製造方法 |
JP4859290B2 (ja) | 2001-06-21 | 2012-01-25 | 富士通セミコンダクター株式会社 | 半導体集積回路装置の製造方法 |
KR100408863B1 (ko) * | 2001-06-29 | 2003-12-06 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 산화막 형성 방법 |
KR100387531B1 (ko) * | 2001-07-30 | 2003-06-18 | 삼성전자주식회사 | 반도체소자 제조방법 |
US7241662B2 (en) | 2002-06-24 | 2007-07-10 | Micron Technology, Inc. | Reduction of field edge thinning in peripheral devices |
EP1496548B1 (en) * | 2003-07-11 | 2008-01-02 | STMicroelectronics S.r.l. | Method for manufacturing differential isolation structures in a semiconductor electronic device and corresponding structure |
KR100481890B1 (ko) * | 2003-08-27 | 2005-04-11 | 주식회사 하이닉스반도체 | 반도체소자의 게이트 산화막 형성방법 |
JP2005353892A (ja) * | 2004-06-11 | 2005-12-22 | Seiko Epson Corp | 半導体基板、半導体装置及びその製造方法 |
JP2006253499A (ja) * | 2005-03-11 | 2006-09-21 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP4551795B2 (ja) * | 2005-03-15 | 2010-09-29 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
JP2006278633A (ja) * | 2005-03-29 | 2006-10-12 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
TWI319898B (en) * | 2006-12-28 | 2010-01-21 | Method of manufacturing gate dielectric layer | |
JP5167721B2 (ja) | 2007-08-10 | 2013-03-21 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP5052580B2 (ja) * | 2009-09-30 | 2012-10-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP5357121B2 (ja) * | 2010-09-16 | 2013-12-04 | シャープ株式会社 | 半導体装置の製造方法、および電気機器 |
JP5951213B2 (ja) * | 2011-10-11 | 2016-07-13 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法及び半導体装置 |
US8492228B1 (en) | 2012-07-12 | 2013-07-23 | International Business Machines Corporation | Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layers |
JP6341802B2 (ja) * | 2014-08-21 | 2018-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
CN105529254B (zh) * | 2014-09-29 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02271659A (ja) | 1989-04-13 | 1990-11-06 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH06196639A (ja) | 1992-12-25 | 1994-07-15 | Toshiba Corp | マルチゲート半導体装置の製造方法 |
KR0138312B1 (ko) * | 1994-05-13 | 1998-04-28 | 김광호 | 비휘발성 반도체 메모리장치의 제조방법 |
JPH07335883A (ja) * | 1994-06-15 | 1995-12-22 | Toshiba Corp | 半導体装置の製造方法 |
JP3290827B2 (ja) * | 1994-09-01 | 2002-06-10 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置とその製造方法 |
JPH0936243A (ja) | 1995-07-19 | 1997-02-07 | Ricoh Co Ltd | 半導体装置とその製造方法 |
JP3304803B2 (ja) * | 1997-02-07 | 2002-07-22 | ヤマハ株式会社 | 多電源半導体装置の製造方法 |
JPH10308497A (ja) * | 1997-05-08 | 1998-11-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JPH113974A (ja) | 1997-06-11 | 1999-01-06 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US6037222A (en) * | 1998-05-22 | 2000-03-14 | Taiwan Semiconductor Manufacturing Company | Method for fabricating a dual-gate dielectric module for memory embedded logic using salicide technology and polycide technology |
JP2000188338A (ja) | 1998-12-21 | 2000-07-04 | Hitachi Ltd | 半導体装置及びその製造方法 |
-
1999
- 1999-06-08 JP JP11161682A patent/JP2000349164A/ja active Pending
-
2000
- 2000-06-07 TW TW089111039A patent/TW480671B/zh not_active IP Right Cessation
- 2000-06-07 KR KR1020000031169A patent/KR20010007278A/ko not_active Application Discontinuation
- 2000-06-07 CN CNB001090992A patent/CN1165987C/zh not_active Expired - Fee Related
- 2000-06-08 US US09/589,729 patent/US6380020B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20010007278A (ko) | 2001-01-26 |
TW480671B (en) | 2002-03-21 |
US6380020B1 (en) | 2002-04-30 |
CN1276626A (zh) | 2000-12-13 |
JP2000349164A (ja) | 2000-12-15 |
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