CN1204616C - 用sige bicmos集成方案制造多晶-多晶电容器的方法 - Google Patents
用sige bicmos集成方案制造多晶-多晶电容器的方法 Download PDFInfo
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- CN1204616C CN1204616C CN 01143340 CN01143340A CN1204616C CN 1204616 C CN1204616 C CN 1204616C CN 01143340 CN01143340 CN 01143340 CN 01143340 A CN01143340 A CN 01143340A CN 1204616 C CN1204616 C CN 1204616C
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CN 01143340 CN1204616C (zh) | 2001-12-20 | 2001-12-20 | 用sige bicmos集成方案制造多晶-多晶电容器的方法 |
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CN 01143340 CN1204616C (zh) | 2001-12-20 | 2001-12-20 | 用sige bicmos集成方案制造多晶-多晶电容器的方法 |
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CN1427463A CN1427463A (zh) | 2003-07-02 |
CN1204616C true CN1204616C (zh) | 2005-06-01 |
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CN 01143340 Expired - Fee Related CN1204616C (zh) | 2001-12-20 | 2001-12-20 | 用sige bicmos集成方案制造多晶-多晶电容器的方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2871935A1 (fr) | 2004-06-18 | 2005-12-23 | St Microelectronics Crolles 2 | Circuit integre comprenant un condensateur a elecrodes metalliques et procede de fabrication d'un tel condensateur |
US7544577B2 (en) * | 2005-08-26 | 2009-06-09 | International Business Machines Corporation | Mobility enhancement in SiGe heterojunction bipolar transistors |
CN103094361B (zh) * | 2011-11-03 | 2015-12-09 | 上海华虹宏力半导体制造有限公司 | 一种SiGe HBT工艺中的PIS电容器及其制造方法 |
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Effective date of registration: 20171128 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171128 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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Granted publication date: 20050601 Termination date: 20191220 |