CN1656609A - SiGe异质结双极晶体管的制造方法 - Google Patents
SiGe异质结双极晶体管的制造方法 Download PDFInfo
- Publication number
- CN1656609A CN1656609A CNA038120240A CN03812024A CN1656609A CN 1656609 A CN1656609 A CN 1656609A CN A038120240 A CNA038120240 A CN A038120240A CN 03812024 A CN03812024 A CN 03812024A CN 1656609 A CN1656609 A CN 1656609A
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- layer
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- described method
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- sige
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- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 150000004767 nitrides Chemical class 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000011049 filling Methods 0.000 claims abstract description 8
- 239000012212 insulator Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 229910003811 SiGeC Inorganic materials 0.000 description 13
- 230000008901 benefit Effects 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000009279 wet oxidation reaction Methods 0.000 description 3
- 208000005189 Embolism Diseases 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02077112.7 | 2002-05-29 | ||
EP02077112 | 2002-05-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1656609A true CN1656609A (zh) | 2005-08-17 |
CN100521113C CN100521113C (zh) | 2009-07-29 |
Family
ID=29558387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038120240A Expired - Fee Related CN100521113C (zh) | 2002-05-29 | 2003-05-27 | SiGe异质结双极晶体管的制造方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US7074685B2 (zh) |
EP (1) | EP1512172B1 (zh) |
JP (1) | JP2005527979A (zh) |
KR (1) | KR20050004874A (zh) |
CN (1) | CN100521113C (zh) |
AT (1) | ATE466378T1 (zh) |
AU (1) | AU2003232968A1 (zh) |
DE (1) | DE60332344D1 (zh) |
TW (1) | TWI308798B (zh) |
WO (1) | WO2003100845A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102129994A (zh) * | 2010-01-13 | 2011-07-20 | Nxp股份有限公司 | 制造异质结双极晶体管的方法和异质结双极晶体管 |
CN102148156A (zh) * | 2011-03-15 | 2011-08-10 | 上海宏力半导体制造有限公司 | 锗硅异质结双极型晶体管的制造方法 |
CN102479704A (zh) * | 2010-11-26 | 2012-05-30 | Nxp股份有限公司 | 制造双极晶体管的方法和双极晶体管 |
CN103050400A (zh) * | 2011-10-11 | 2013-04-17 | Nxp股份有限公司 | 双极晶体管制造方法、双极晶体管和集成电路 |
CN108257867A (zh) * | 2018-01-11 | 2018-07-06 | 上海华虹宏力半导体制造有限公司 | 采用非选择性外延的自对准锗硅hbt器件的制造方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10162074B4 (de) | 2001-12-06 | 2010-04-08 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | BiCMOS-Struktur, Verfahren zu ihrer Herstellung und Bipolartransistor für eine BiCMOS-Struktur |
EP1695380B1 (en) * | 2003-12-12 | 2012-02-15 | Nxp B.V. | Method to reduce seedlayer topography in bicmos process |
ATE495547T1 (de) | 2005-01-18 | 2011-01-15 | Nxp Bv | Bipolartransistor und herstellungsverfahren dafür |
WO2007057803A1 (en) * | 2005-11-21 | 2007-05-24 | Nxp B.V. | Method of manufacturing a semiconductor device and semiconductor device obtained with such a method |
WO2007076576A1 (en) * | 2005-12-30 | 2007-07-12 | Epitactix Pty Ltd | Method and structure for a high performance semiconductor device |
US8431966B2 (en) | 2008-05-21 | 2013-04-30 | Nxp B.V. | Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby |
US7803685B2 (en) * | 2008-06-26 | 2010-09-28 | Freescale Semiconductor, Inc. | Silicided base structure for high frequency transistors |
EP2315238B1 (en) | 2009-10-26 | 2012-06-20 | Nxp B.V. | Heterojunction Bipolar Transistor |
EP2372754B1 (en) * | 2010-04-01 | 2018-03-14 | Nxp B.V. | Spacer formation in the fabrication of planar bipolar transistors |
EP2418681B1 (en) * | 2010-08-10 | 2017-10-11 | Nxp B.V. | Heterojunction Bipolar Transistor and Manufacturing Method |
EP2458624A1 (en) | 2010-11-26 | 2012-05-30 | Nxp B.V. | Heterojunction Bipolar Transistor Manufacturing Method and Integrated Circuit Comprising a Heterojunction Bipolar Transistor |
EP2466628A1 (en) | 2010-12-16 | 2012-06-20 | Nxp B.V. | Bipolar transistor manufacturing method and bipolar transistor |
TWI413468B (zh) * | 2010-12-29 | 2013-10-21 | Unimicron Technology Corp | 製造內嵌式細線路之方法 |
EP2506297A1 (en) * | 2011-03-29 | 2012-10-03 | Nxp B.V. | Bi-CMOS Device and Method |
EP2555235B1 (en) | 2011-08-02 | 2014-06-18 | Nxp B.V. | Method of manufacturing an IC comprising a plurality of bipolar transistors and IC comprising a plurality of bipolar transistors |
EP2565911B1 (en) | 2011-09-02 | 2014-08-20 | Nxp B.V. | Method of manufacturing IC comprising a bipolar transistor and IC |
CN102420243B (zh) * | 2011-11-09 | 2013-10-23 | 上海华虹Nec电子有限公司 | 锗硅异质结双极晶体管及制造方法 |
EP2747131B1 (en) | 2012-12-18 | 2015-07-01 | Nxp B.V. | Method of processing a silicon wafer |
CN103022109B (zh) * | 2012-12-20 | 2015-02-04 | 清华大学 | 局部氧化抬升外基区全自对准双极晶体管及其制备方法 |
CN108110052A (zh) * | 2018-01-30 | 2018-06-01 | 上海华虹宏力半导体制造有限公司 | 锗硅异质结双极晶体管及制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5101256A (en) * | 1989-02-13 | 1992-03-31 | International Business Machines Corporation | Bipolar transistor with ultra-thin epitaxial base and method of fabricating same |
US5773350A (en) * | 1997-01-28 | 1998-06-30 | National Semiconductor Corporation | Method for forming a self-aligned bipolar junction transistor with silicide extrinsic base contacts and selective epitaxial grown intrinsic base |
US20020000664A1 (en) * | 1999-02-05 | 2002-01-03 | Lie-Yea Cheng | Silicon nitride composite hdp/cvd process |
US6169007B1 (en) * | 1999-06-25 | 2001-01-02 | Applied Micro Circuits Corporation | Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback |
US6346453B1 (en) * | 2000-01-27 | 2002-02-12 | Sige Microsystems Inc. | Method of producing a SI-GE base heterojunction bipolar device |
FR2806831B1 (fr) * | 2000-03-27 | 2003-09-19 | St Microelectronics Sa | Procede de fabrication d'un transistor bipolaire de type double-polysilicium auto-aligne a base a heterojonction et transistor correspondant |
US6664574B2 (en) * | 2001-09-05 | 2003-12-16 | Semiconductor Components Industries Llc | Heterojunction semiconductor device and method of manufacturing |
JP3914064B2 (ja) * | 2002-02-28 | 2007-05-16 | 富士通株式会社 | 混晶膜の成長方法及び装置 |
-
2003
- 2003-05-27 DE DE60332344T patent/DE60332344D1/de not_active Expired - Lifetime
- 2003-05-27 EP EP03727767A patent/EP1512172B1/en not_active Expired - Lifetime
- 2003-05-27 AT AT03727767T patent/ATE466378T1/de not_active IP Right Cessation
- 2003-05-27 WO PCT/IB2003/002034 patent/WO2003100845A1/en active Application Filing
- 2003-05-27 US US10/515,763 patent/US7074685B2/en not_active Expired - Lifetime
- 2003-05-27 AU AU2003232968A patent/AU2003232968A1/en not_active Abandoned
- 2003-05-27 KR KR10-2004-7019147A patent/KR20050004874A/ko not_active Application Discontinuation
- 2003-05-27 CN CNB038120240A patent/CN100521113C/zh not_active Expired - Fee Related
- 2003-05-27 JP JP2004508401A patent/JP2005527979A/ja active Pending
- 2003-05-28 TW TW092114412A patent/TWI308798B/zh not_active IP Right Cessation
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102129994A (zh) * | 2010-01-13 | 2011-07-20 | Nxp股份有限公司 | 制造异质结双极晶体管的方法和异质结双极晶体管 |
CN102129994B (zh) * | 2010-01-13 | 2013-06-05 | Nxp股份有限公司 | 制造异质结双极晶体管的方法和异质结双极晶体管 |
CN102479704A (zh) * | 2010-11-26 | 2012-05-30 | Nxp股份有限公司 | 制造双极晶体管的方法和双极晶体管 |
CN102148156A (zh) * | 2011-03-15 | 2011-08-10 | 上海宏力半导体制造有限公司 | 锗硅异质结双极型晶体管的制造方法 |
CN102148156B (zh) * | 2011-03-15 | 2015-10-28 | 上海华虹宏力半导体制造有限公司 | 锗硅异质结双极型晶体管的制造方法 |
CN103050400A (zh) * | 2011-10-11 | 2013-04-17 | Nxp股份有限公司 | 双极晶体管制造方法、双极晶体管和集成电路 |
CN103050400B (zh) * | 2011-10-11 | 2016-03-30 | Nxp股份有限公司 | 双极晶体管制造方法、双极晶体管和集成电路 |
CN108257867A (zh) * | 2018-01-11 | 2018-07-06 | 上海华虹宏力半导体制造有限公司 | 采用非选择性外延的自对准锗硅hbt器件的制造方法 |
CN108257867B (zh) * | 2018-01-11 | 2020-11-24 | 上海华虹宏力半导体制造有限公司 | 采用非选择性外延的自对准锗硅hbt器件的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20050004874A (ko) | 2005-01-12 |
CN100521113C (zh) | 2009-07-29 |
TWI308798B (en) | 2009-04-11 |
US20050218399A1 (en) | 2005-10-06 |
WO2003100845A1 (en) | 2003-12-04 |
EP1512172A1 (en) | 2005-03-09 |
EP1512172B1 (en) | 2010-04-28 |
US7074685B2 (en) | 2006-07-11 |
AU2003232968A1 (en) | 2003-12-12 |
TW200405569A (en) | 2004-04-01 |
DE60332344D1 (de) | 2010-06-10 |
JP2005527979A (ja) | 2005-09-15 |
ATE466378T1 (de) | 2010-05-15 |
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Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20070914 |
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