ATE466378T1 - Verfahren zur herstellung eines sige heteroübergang-bipolartransistors - Google Patents

Verfahren zur herstellung eines sige heteroübergang-bipolartransistors

Info

Publication number
ATE466378T1
ATE466378T1 AT03727767T AT03727767T ATE466378T1 AT E466378 T1 ATE466378 T1 AT E466378T1 AT 03727767 T AT03727767 T AT 03727767T AT 03727767 T AT03727767 T AT 03727767T AT E466378 T1 ATE466378 T1 AT E466378T1
Authority
AT
Austria
Prior art keywords
layer
area opening
transistor area
heterojunction bipolar
bipolar transistor
Prior art date
Application number
AT03727767T
Other languages
English (en)
Inventor
Petrus Magnee
Johannes Donkers
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE466378T1 publication Critical patent/ATE466378T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
AT03727767T 2002-05-29 2003-05-27 Verfahren zur herstellung eines sige heteroübergang-bipolartransistors ATE466378T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02077112 2002-05-29
PCT/IB2003/002034 WO2003100845A1 (en) 2002-05-29 2003-05-27 Method of fabrication sige heterojunction bipolar transistor

Publications (1)

Publication Number Publication Date
ATE466378T1 true ATE466378T1 (de) 2010-05-15

Family

ID=29558387

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03727767T ATE466378T1 (de) 2002-05-29 2003-05-27 Verfahren zur herstellung eines sige heteroübergang-bipolartransistors

Country Status (10)

Country Link
US (1) US7074685B2 (de)
EP (1) EP1512172B1 (de)
JP (1) JP2005527979A (de)
KR (1) KR20050004874A (de)
CN (1) CN100521113C (de)
AT (1) ATE466378T1 (de)
AU (1) AU2003232968A1 (de)
DE (1) DE60332344D1 (de)
TW (1) TWI308798B (de)
WO (1) WO2003100845A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10162074B4 (de) 2001-12-06 2010-04-08 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik BiCMOS-Struktur, Verfahren zu ihrer Herstellung und Bipolartransistor für eine BiCMOS-Struktur
EP1695380B1 (de) * 2003-12-12 2012-02-15 Nxp B.V. Verfahren zur reduktion der seedlayer-topographie in bicmos-prozessen
EP1842229B1 (de) 2005-01-18 2011-01-12 Nxp B.V. Bipolartransistor und herstellungsverfahren dafür
EP1955367B1 (de) 2005-11-21 2011-01-19 Nxp B.V. Verfahren zur herstellung eines halbleiterbauelements und mit einem solchen verfahren erhaltenes halbleiterbauelement
WO2007076576A1 (en) * 2005-12-30 2007-07-12 Epitactix Pty Ltd Method and structure for a high performance semiconductor device
WO2009141753A1 (en) 2008-05-21 2009-11-26 Nxp B.V. A method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby
US7803685B2 (en) * 2008-06-26 2010-09-28 Freescale Semiconductor, Inc. Silicided base structure for high frequency transistors
EP2315238B1 (de) 2009-10-26 2012-06-20 Nxp B.V. Bipolarer Heteroübergangstransistor
EP2346070B1 (de) * 2010-01-13 2013-03-20 Nxp B.V. Verfahren zur Herstellung eines bipolaren Heteroübertragungstransistors und bipolarer Heteroübertragungstransistor
EP2372754B1 (de) * 2010-04-01 2018-03-14 Nxp B.V. Abstandshalterstruktur bei der Herstellung von flachen Bipolartransistoren
EP2418681B1 (de) * 2010-08-10 2017-10-11 Nxp B.V. Bipolarer Heteroübergangstransistor und Herstellungsverfahren
EP2458624A1 (de) 2010-11-26 2012-05-30 Nxp B.V. Verfahren zur Herstellung eines bipolaren Heteroübergangstransistors und integrierte Schaltung mit einem bipolaren Heteroübergangstransistor
EP2458623B1 (de) * 2010-11-26 2014-06-25 Nxp B.V. Verfahren zur Herstellung eines bipolaren Transistors und bipolarer Transistor
EP2466628A1 (de) 2010-12-16 2012-06-20 Nxp B.V. Herstellungsverfahren für zweipoligen Transistor und zweipoliger Transistor
TWI413468B (zh) * 2010-12-29 2013-10-21 Unimicron Technology Corp 製造內嵌式細線路之方法
CN102148156B (zh) * 2011-03-15 2015-10-28 上海华虹宏力半导体制造有限公司 锗硅异质结双极型晶体管的制造方法
EP2506297A1 (de) * 2011-03-29 2012-10-03 Nxp B.V. Bi-CMOS-Vorrichtung und Verfahren
EP2555235B1 (de) 2011-08-02 2014-06-18 Nxp B.V. Verfahren zur Herstellung einer integrierten Schaltung mit mehreren bipolaren Transistoren und integrierte Schaltung mit mehreren bipolaren Transistoren
EP2581930B1 (de) 2011-10-11 2014-06-04 Nxp B.V. Verfahren zur Herstellung eines bipolaren Transistors, bipolarer Transistor und integrierte Schaltung
EP2565911B1 (de) 2011-09-02 2014-08-20 Nxp B.V. Verfahren zur Herstellung einer integrierten Schaltung mit einem bipolaren Transistor und integrierte Schaltung
CN102420243B (zh) * 2011-11-09 2013-10-23 上海华虹Nec电子有限公司 锗硅异质结双极晶体管及制造方法
EP2747131B1 (de) 2012-12-18 2015-07-01 Nxp B.V. Verfahren zur Verarbeitung eines Siliziumwafers
CN103022109B (zh) * 2012-12-20 2015-02-04 清华大学 局部氧化抬升外基区全自对准双极晶体管及其制备方法
CN108257867B (zh) * 2018-01-11 2020-11-24 上海华虹宏力半导体制造有限公司 采用非选择性外延的自对准锗硅hbt器件的制造方法
CN108110052A (zh) * 2018-01-30 2018-06-01 上海华虹宏力半导体制造有限公司 锗硅异质结双极晶体管及制造方法
TWI743788B (zh) * 2020-05-18 2021-10-21 力晶積成電子製造股份有限公司 電晶體及其製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5101256A (en) * 1989-02-13 1992-03-31 International Business Machines Corporation Bipolar transistor with ultra-thin epitaxial base and method of fabricating same
US5773350A (en) * 1997-01-28 1998-06-30 National Semiconductor Corporation Method for forming a self-aligned bipolar junction transistor with silicide extrinsic base contacts and selective epitaxial grown intrinsic base
US20020000664A1 (en) * 1999-02-05 2002-01-03 Lie-Yea Cheng Silicon nitride composite hdp/cvd process
US6169007B1 (en) * 1999-06-25 2001-01-02 Applied Micro Circuits Corporation Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback
US6346453B1 (en) * 2000-01-27 2002-02-12 Sige Microsystems Inc. Method of producing a SI-GE base heterojunction bipolar device
FR2806831B1 (fr) * 2000-03-27 2003-09-19 St Microelectronics Sa Procede de fabrication d'un transistor bipolaire de type double-polysilicium auto-aligne a base a heterojonction et transistor correspondant
US6664574B2 (en) * 2001-09-05 2003-12-16 Semiconductor Components Industries Llc Heterojunction semiconductor device and method of manufacturing
JP3914064B2 (ja) * 2002-02-28 2007-05-16 富士通株式会社 混晶膜の成長方法及び装置

Also Published As

Publication number Publication date
KR20050004874A (ko) 2005-01-12
CN1656609A (zh) 2005-08-17
US20050218399A1 (en) 2005-10-06
EP1512172B1 (de) 2010-04-28
WO2003100845A1 (en) 2003-12-04
TWI308798B (en) 2009-04-11
CN100521113C (zh) 2009-07-29
AU2003232968A1 (en) 2003-12-12
EP1512172A1 (de) 2005-03-09
JP2005527979A (ja) 2005-09-15
TW200405569A (en) 2004-04-01
DE60332344D1 (de) 2010-06-10
US7074685B2 (en) 2006-07-11

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