DE60232855D1 - Verfahren zur Herstellung von Halbleiteranordnungen mit Graben-Gate - Google Patents
Verfahren zur Herstellung von Halbleiteranordnungen mit Graben-GateInfo
- Publication number
- DE60232855D1 DE60232855D1 DE60232855T DE60232855T DE60232855D1 DE 60232855 D1 DE60232855 D1 DE 60232855D1 DE 60232855 T DE60232855 T DE 60232855T DE 60232855 T DE60232855 T DE 60232855T DE 60232855 D1 DE60232855 D1 DE 60232855D1
- Authority
- DE
- Germany
- Prior art keywords
- mask
- gate
- trench
- semiconductor devices
- gate semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 125000006850 spacer group Chemical group 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66719—With a step of forming an insulating sidewall spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0101695.5A GB0101695D0 (en) | 2001-01-23 | 2001-01-23 | Manufacture of trench-gate semiconductor devices |
PCT/IB2002/000048 WO2002059957A1 (en) | 2001-01-23 | 2002-01-10 | Manufacture of trench-gate semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60232855D1 true DE60232855D1 (de) | 2009-08-20 |
Family
ID=9907321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60232855T Expired - Lifetime DE60232855D1 (de) | 2001-01-23 | 2002-01-10 | Verfahren zur Herstellung von Halbleiteranordnungen mit Graben-Gate |
Country Status (9)
Country | Link |
---|---|
US (1) | US6521498B2 (de) |
EP (1) | EP1356506B1 (de) |
JP (1) | JP4198465B2 (de) |
KR (1) | KR100834269B1 (de) |
AT (1) | ATE436089T1 (de) |
DE (1) | DE60232855D1 (de) |
GB (1) | GB0101695D0 (de) |
TW (1) | TW541630B (de) |
WO (1) | WO2002059957A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4932088B2 (ja) | 2001-02-19 | 2012-05-16 | ルネサスエレクトロニクス株式会社 | 絶縁ゲート型半導体装置の製造方法 |
JP2004055803A (ja) * | 2002-07-19 | 2004-02-19 | Renesas Technology Corp | 半導体装置 |
US6753228B2 (en) * | 2002-10-15 | 2004-06-22 | Semiconductor Components Industries, L.L.C. | Method of forming a low resistance semiconductor device and structure therefor |
US6873003B2 (en) * | 2003-03-06 | 2005-03-29 | Infineon Technologies Aktiengesellschaft | Nonvolatile memory cell |
US7393081B2 (en) * | 2003-06-30 | 2008-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Droplet jetting device and method of manufacturing pattern |
US6913977B2 (en) * | 2003-09-08 | 2005-07-05 | Siliconix Incorporated | Triple-diffused trench MOSFET and method of fabricating the same |
KR100500473B1 (ko) * | 2003-10-22 | 2005-07-12 | 삼성전자주식회사 | 반도체 소자에서의 리세스 게이트 트랜지스터 구조 및형성방법 |
US7786531B2 (en) * | 2005-03-18 | 2010-08-31 | Alpha & Omega Semiconductor Ltd. | MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification |
JP2008098593A (ja) * | 2006-09-15 | 2008-04-24 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
KR100861174B1 (ko) * | 2006-10-31 | 2008-09-30 | 주식회사 하이닉스반도체 | 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법 |
JP2008218711A (ja) * | 2007-03-05 | 2008-09-18 | Renesas Technology Corp | 半導体装置およびその製造方法、ならびに電源装置 |
US7902017B2 (en) * | 2008-12-17 | 2011-03-08 | Semiconductor Components Industries, Llc | Process of forming an electronic device including a trench and a conductive structure therein |
US8426275B2 (en) * | 2009-01-09 | 2013-04-23 | Niko Semiconductor Co., Ltd. | Fabrication method of trenched power MOSFET |
KR101649967B1 (ko) * | 2010-05-04 | 2016-08-23 | 삼성전자주식회사 | 이-퓨즈 구조체를 포함하는 반도체 소자 및 그 제조 방법 |
US8377813B2 (en) * | 2010-08-27 | 2013-02-19 | Rexchip Electronics Corporation | Split word line fabrication process |
CN116779664A (zh) * | 2023-08-22 | 2023-09-19 | 深圳芯能半导体技术有限公司 | 一种具电极间电容结构的igbt芯片及其制作方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9306895D0 (en) * | 1993-04-01 | 1993-05-26 | Philips Electronics Uk Ltd | A method of manufacturing a semiconductor device comprising an insulated gate field effect device |
JP3155894B2 (ja) * | 1994-09-29 | 2001-04-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
DE19545903C2 (de) * | 1995-12-08 | 1997-09-18 | Siemens Ag | Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung |
DE19600422C1 (de) * | 1996-01-08 | 1997-08-21 | Siemens Ag | Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung |
JP4077529B2 (ja) * | 1996-05-22 | 2008-04-16 | フェアチャイルドコリア半導体株式会社 | トレンチ拡散mosトランジスタの製造方法 |
US5972741A (en) * | 1996-10-31 | 1999-10-26 | Sanyo Electric Co., Ltd. | Method of manufacturing semiconductor device |
DE19646419C1 (de) * | 1996-11-11 | 1998-04-30 | Siemens Ag | Verfahren zur Herstellung einer elektrisch schreib- und löschbaren Festwertspeicherzellenanordnung |
US6096608A (en) * | 1997-06-30 | 2000-08-01 | Siliconix Incorporated | Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench |
US6177299B1 (en) * | 1998-01-15 | 2001-01-23 | International Business Machines Corporation | Transistor having substantially isolated body and method of making the same |
-
2001
- 2001-01-23 GB GBGB0101695.5A patent/GB0101695D0/en not_active Ceased
-
2002
- 2002-01-10 AT AT02734870T patent/ATE436089T1/de not_active IP Right Cessation
- 2002-01-10 JP JP2002560187A patent/JP4198465B2/ja not_active Expired - Fee Related
- 2002-01-10 KR KR1020027012359A patent/KR100834269B1/ko not_active IP Right Cessation
- 2002-01-10 DE DE60232855T patent/DE60232855D1/de not_active Expired - Lifetime
- 2002-01-10 EP EP02734870A patent/EP1356506B1/de not_active Expired - Lifetime
- 2002-01-10 WO PCT/IB2002/000048 patent/WO2002059957A1/en active Application Filing
- 2002-01-23 TW TW091101050A patent/TW541630B/zh not_active IP Right Cessation
- 2002-06-04 US US10/055,350 patent/US6521498B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4198465B2 (ja) | 2008-12-17 |
KR20020092391A (ko) | 2002-12-11 |
EP1356506B1 (de) | 2009-07-08 |
US6521498B2 (en) | 2003-02-18 |
EP1356506A1 (de) | 2003-10-29 |
TW541630B (en) | 2003-07-11 |
KR100834269B1 (ko) | 2008-05-30 |
JP2004518292A (ja) | 2004-06-17 |
GB0101695D0 (en) | 2001-03-07 |
WO2002059957A1 (en) | 2002-08-01 |
US20020137291A1 (en) | 2002-09-26 |
ATE436089T1 (de) | 2009-07-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |