ATE374435T1 - Verfahren zur herstellung einer halbleiteranordnung mit einer versenkten isolierschicht mit veränderlicher dicke - Google Patents

Verfahren zur herstellung einer halbleiteranordnung mit einer versenkten isolierschicht mit veränderlicher dicke

Info

Publication number
ATE374435T1
ATE374435T1 AT01936228T AT01936228T ATE374435T1 AT E374435 T1 ATE374435 T1 AT E374435T1 AT 01936228 T AT01936228 T AT 01936228T AT 01936228 T AT01936228 T AT 01936228T AT E374435 T1 ATE374435 T1 AT E374435T1
Authority
AT
Austria
Prior art keywords
trench
insulating layer
producing
semiconductor device
variable thickness
Prior art date
Application number
AT01936228T
Other languages
English (en)
Inventor
Raymond Hueting
Cornelis Timmerling
Henricus Maas
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE374435T1 publication Critical patent/ATE374435T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/664—Inverted VDMOS transistors, i.e. source-down VDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Led Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
AT01936228T 2000-04-26 2001-04-12 Verfahren zur herstellung einer halbleiteranordnung mit einer versenkten isolierschicht mit veränderlicher dicke ATE374435T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0010041.2A GB0010041D0 (en) 2000-04-26 2000-04-26 Trench semiconductor device manufacture

Publications (1)

Publication Number Publication Date
ATE374435T1 true ATE374435T1 (de) 2007-10-15

Family

ID=9890465

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01936228T ATE374435T1 (de) 2000-04-26 2001-04-12 Verfahren zur herstellung einer halbleiteranordnung mit einer versenkten isolierschicht mit veränderlicher dicke

Country Status (7)

Country Link
US (1) US6319777B1 (de)
EP (1) EP1281200B1 (de)
JP (1) JP2003532293A (de)
AT (1) ATE374435T1 (de)
DE (1) DE60130647T2 (de)
GB (1) GB0010041D0 (de)
WO (1) WO2001082359A2 (de)

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US6635534B2 (en) * 2000-06-05 2003-10-21 Fairchild Semiconductor Corporation Method of manufacturing a trench MOSFET using selective growth epitaxy
US6583479B1 (en) * 2000-10-16 2003-06-24 Advanced Micro Devices, Inc. Sidewall NROM and method of manufacture thereof for non-volatile memory cells
US6649477B2 (en) * 2001-10-04 2003-11-18 General Semiconductor, Inc. Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
US6465304B1 (en) * 2001-10-04 2002-10-15 General Semiconductor, Inc. Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
US7736976B2 (en) * 2001-10-04 2010-06-15 Vishay General Semiconductor Llc Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
US6674124B2 (en) * 2001-11-15 2004-01-06 General Semiconductor, Inc. Trench MOSFET having low gate charge
US6566201B1 (en) * 2001-12-31 2003-05-20 General Semiconductor, Inc. Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion
US6576516B1 (en) 2001-12-31 2003-06-10 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
US6750104B2 (en) * 2001-12-31 2004-06-15 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source
US6656797B2 (en) 2001-12-31 2003-12-02 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation
ITVA20020005A1 (it) * 2002-01-25 2003-07-25 St Microelectronics Srl Flusso di processo per la realizzazione di un transitore mos di potenza a trench di gate con canale di dimensioni scalate
US6742247B2 (en) * 2002-03-14 2004-06-01 General Dynamics Advanced Information Systems, Inc. Process for manufacturing laminated high layer count printed circuit boards
US6686244B2 (en) * 2002-03-21 2004-02-03 General Semiconductor, Inc. Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step
DE10219329B4 (de) * 2002-04-30 2014-01-23 Infineon Technologies Ag Halbleiterschaltungsanordnung
KR100521369B1 (ko) * 2002-12-18 2005-10-12 삼성전자주식회사 고속도 및 저전력 소모 반도체 소자 및 그 제조 방법
US7279743B2 (en) 2003-12-02 2007-10-09 Vishay-Siliconix Closed cell trench metal-oxide-semiconductor field effect transistor
US6906380B1 (en) 2004-05-13 2005-06-14 Vishay-Siliconix Drain side gate trench metal-oxide-semiconductor field effect transistor
US8183629B2 (en) * 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
JP5350783B2 (ja) * 2005-05-24 2013-11-27 ヴィシェイ−シリコニックス トレンチ型金属酸化物半導体電界効果トランジスタの製造方法
JP4622905B2 (ja) * 2006-03-24 2011-02-02 トヨタ自動車株式会社 絶縁ゲート型半導体装置の製造方法
TWI320207B (en) * 2006-05-05 2010-02-01 Method of fabricating metal oxide semiconductor
US8471390B2 (en) * 2006-05-12 2013-06-25 Vishay-Siliconix Power MOSFET contact metallization
US8368126B2 (en) 2007-04-19 2013-02-05 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
JP2009026809A (ja) * 2007-07-17 2009-02-05 Toyota Motor Corp 半導体装置とその製造方法
JP5266738B2 (ja) * 2007-12-05 2013-08-21 トヨタ自動車株式会社 トレンチゲート型半導体装置の製造方法
KR100905789B1 (ko) * 2008-01-02 2009-07-02 주식회사 하이닉스반도체 수직형 트랜지스터를 구비한 반도체 소자의 제조방법
US10205017B2 (en) * 2009-06-17 2019-02-12 Alpha And Omega Semiconductor Incorporated Bottom source NMOS triggered Zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS)
US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
US8604525B2 (en) 2009-11-02 2013-12-10 Vishay-Siliconix Transistor structure with feed-through source-to-substrate contact
DE102010034116B3 (de) * 2010-08-12 2012-01-12 Infineon Technologies Austria Ag Verfahren zum Erzeugen einer Isolationsschicht zwischen zwei Elektroden
US9543208B2 (en) * 2014-02-24 2017-01-10 Infineon Technologies Ag Method of singulating semiconductor devices using isolation trenches
US9425304B2 (en) 2014-08-21 2016-08-23 Vishay-Siliconix Transistor structure with improved unclamped inductive switching immunity
US9559158B2 (en) 2015-01-12 2017-01-31 The Hong Kong University Of Science And Technology Method and apparatus for an integrated capacitor
CN109037337A (zh) * 2018-06-28 2018-12-18 华为技术有限公司 一种功率半导体器件及制造方法
TWI803217B (zh) * 2021-12-16 2023-05-21 南亞科技股份有限公司 具有減少洩漏的字元線的記憶體元件
US20230197771A1 (en) * 2021-12-16 2023-06-22 Nanya Technology Corporation Memory device having word lines with reduced leakage
EP4290585A1 (de) 2022-06-08 2023-12-13 Nexperia B.V. Seitlich orientierter metalloxidhalbleiter, mos-vorrichtung mit einem halbleiterkörper
US12581715B2 (en) * 2023-01-12 2026-03-17 Macronix International Co., Ltd. Semiconductor device and a method of fabricating the same with increased effective width of the channel without increasing the width of the gate active region

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Also Published As

Publication number Publication date
DE60130647D1 (de) 2007-11-08
EP1281200A2 (de) 2003-02-05
EP1281200B1 (de) 2007-09-26
JP2003532293A (ja) 2003-10-28
GB0010041D0 (en) 2000-06-14
US6319777B1 (en) 2001-11-20
WO2001082359A2 (en) 2001-11-01
DE60130647T2 (de) 2008-06-19
WO2001082359A3 (en) 2002-05-16
US20010036704A1 (en) 2001-11-01

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