ATE224101T1 - Halbleiterverfahren zur herstellung eines elektrisch leitenden kontaktanschlusses - Google Patents

Halbleiterverfahren zur herstellung eines elektrisch leitenden kontaktanschlusses

Info

Publication number
ATE224101T1
ATE224101T1 AT96907011T AT96907011T ATE224101T1 AT E224101 T1 ATE224101 T1 AT E224101T1 AT 96907011 T AT96907011 T AT 96907011T AT 96907011 T AT96907011 T AT 96907011T AT E224101 T1 ATE224101 T1 AT E224101T1
Authority
AT
Austria
Prior art keywords
contact opening
material layer
substrate
etching
electrically conductive
Prior art date
Application number
AT96907011T
Other languages
English (en)
Inventor
Viju K Mathews
Nanseng Jeng
Pierre C Fazan
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/391,719 external-priority patent/US5580821A/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE224101T1 publication Critical patent/ATE224101T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)
  • Drying Of Semiconductors (AREA)
AT96907011T 1995-02-21 1996-01-23 Halbleiterverfahren zur herstellung eines elektrisch leitenden kontaktanschlusses ATE224101T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/391,719 US5580821A (en) 1995-02-21 1995-02-21 Semiconductor processing method of forming an electrically conductive contact plug
US08/551,829 US5658829A (en) 1995-02-21 1995-11-07 Semiconductor processing method of forming an electrically conductive contact plug
PCT/US1996/000929 WO1996026542A1 (en) 1995-02-21 1996-01-23 Semiconductor processing method of forming an electrically conductive contact plug

Publications (1)

Publication Number Publication Date
ATE224101T1 true ATE224101T1 (de) 2002-09-15

Family

ID=27013606

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96907011T ATE224101T1 (de) 1995-02-21 1996-01-23 Halbleiterverfahren zur herstellung eines elektrisch leitenden kontaktanschlusses

Country Status (7)

Country Link
US (3) US5658829A (de)
EP (1) EP0811247B1 (de)
JP (1) JP3593133B2 (de)
KR (1) KR100399257B1 (de)
AT (1) ATE224101T1 (de)
DE (1) DE69623598T2 (de)
WO (1) WO1996026542A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5658829A (en) * 1995-02-21 1997-08-19 Micron Technology, Inc. Semiconductor processing method of forming an electrically conductive contact plug
US5994220A (en) * 1996-02-02 1999-11-30 Micron Technology, Inc. Method for forming a semiconductor connection with a top surface having an enlarged recess
US5956608A (en) * 1996-06-20 1999-09-21 Applied Materials, Inc. Modulating surface morphology of barrier layers
US5970374A (en) * 1996-10-18 1999-10-19 Chartered Semiconductor Manufacturing Ltd. Method for forming contacts and vias with improved barrier metal step-coverage
US6245594B1 (en) * 1997-08-05 2001-06-12 Micron Technology, Inc. Methods for forming conductive micro-bumps and recessed contacts for flip-chip technology and method of flip-chip assembly
US6066552A (en) * 1998-08-25 2000-05-23 Micron Technology, Inc. Method and structure for improved alignment tolerance in multiple, singularized plugs
US6228754B1 (en) * 1999-01-05 2001-05-08 Advanced Micro Devices, Inc. Method for forming semiconductor seed layers by inert gas sputter etching
US6096651A (en) * 1999-01-11 2000-08-01 Taiwan Semiconductor Manufacturing Company Key-hole reduction during tungsten plug formation
US20030015496A1 (en) * 1999-07-22 2003-01-23 Sujit Sharan Plasma etching process
US6274483B1 (en) * 2000-01-18 2001-08-14 Taiwan Semiconductor Manufacturing Company Method to improve metal line adhesion by trench corner shape modification
US6583053B2 (en) * 2001-03-23 2003-06-24 Texas Instruments Incorporated Use of a sacrificial layer to facilitate metallization for small features
TWI226059B (en) * 2001-06-11 2005-01-01 Sony Corp Method for manufacturing master disk for optical recording medium having pits and projections, stamper, and optical recording medium
CN1643565A (zh) * 2002-03-13 2005-07-20 不列颠哥伦比亚大学 高动态范围显示装置
US7778812B2 (en) * 2005-01-07 2010-08-17 Micron Technology, Inc. Selecting data to verify in hardware device model simulation test generation
US7758763B2 (en) * 2006-10-31 2010-07-20 Applied Materials, Inc. Plasma for resist removal and facet control of underlying features
EP2860721B1 (de) * 2007-02-01 2021-09-01 Dolby Laboratories Licensing Corporation Kalibrierung von Anzeigen mit räumlich variabler Hintergrundbeleuchtung
US20080213991A1 (en) * 2007-03-02 2008-09-04 Airdio Wireless Inc. Method of forming plugs
JP2009194195A (ja) * 2008-02-15 2009-08-27 Panasonic Corp 半導体装置及びその製造方法
US20100214282A1 (en) * 2009-02-24 2010-08-26 Dolby Laboratories Licensing Corporation Apparatus for providing light source modulation in dual modulator displays
JP2011029552A (ja) * 2009-07-29 2011-02-10 Renesas Electronics Corp 半導体装置およびその製造方法
US8691622B2 (en) 2012-05-25 2014-04-08 Micron Technology, Inc. Memory cells and methods of forming memory cells

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4372034B1 (en) * 1981-03-26 1998-07-21 Intel Corp Process for forming contact openings through oxide layers
FR2588417B1 (fr) * 1985-10-03 1988-07-29 Bull Sa Procede de formation d'un reseau metallique multicouche d'interconnexion des composants d'un circuit integre de haute densite et circuit integre en resultant
US4999318A (en) * 1986-11-12 1991-03-12 Hitachi, Ltd. Method for forming metal layer interconnects using stepped via walls
US5320979A (en) * 1987-07-20 1994-06-14 Nippon Telegraph And Telephone Corporation Method of connecting wirings through connection hole
DE3851802T2 (de) * 1987-07-20 1995-02-09 Nippon Telegraph & Telephone Methode zur Verbindung von Leitungen durch Verbindungslöcher.
FR2630588A1 (fr) * 1988-04-22 1989-10-27 Philips Nv Procede pour realiser une configuration d'interconnexion sur un dispositif semiconducteur notamment un circuit a densite d'integration elevee
EP0469215B1 (de) * 1990-07-31 1995-11-22 International Business Machines Corporation Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten Feldeffekttransistoren mit Wolfram-Gitter und sich daraus ergebende Struktur
JPH04251926A (ja) * 1991-01-10 1992-09-08 Fujitsu Ltd 半導体装置の製造方法
JP3200455B2 (ja) * 1991-01-14 2001-08-20 沖電気工業株式会社 半導体記憶装置の製造方法
JPH04241926A (ja) * 1991-01-17 1992-08-28 Sumitomo Electric Ind Ltd チューブ押出用無調心ヘッド
US5124780A (en) * 1991-06-10 1992-06-23 Micron Technology, Inc. Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization
US5203957A (en) * 1991-06-12 1993-04-20 Taiwan Semiconductor Manufacturing Company Contact sidewall tapering with argon sputtering
US5244534A (en) * 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
US5269880A (en) * 1992-04-03 1993-12-14 Northern Telecom Limited Tapering sidewalls of via holes
US5371042A (en) * 1992-06-16 1994-12-06 Applied Materials, Inc. Method of filling contacts in semiconductor devices
US5288665A (en) * 1992-08-12 1994-02-22 Applied Materials, Inc. Process for forming low resistance aluminum plug in via electrically connected to overlying patterned metal layer for integrated circuit structures
US5286675A (en) * 1993-04-14 1994-02-15 Industrial Technology Research Institute Blanket tungsten etchback process using disposable spin-on-glass
US5366929A (en) * 1993-05-28 1994-11-22 Cypress Semiconductor Corp. Method for making reliable selective via fills
JPH0737869A (ja) * 1993-07-20 1995-02-07 Nippon Steel Corp 半導体装置の製造方法
US5320981A (en) * 1993-08-10 1994-06-14 Micron Semiconductor, Inc. High accuracy via formation for semiconductor devices
US5585308A (en) * 1993-12-23 1996-12-17 Sgs-Thomson Microelectronics, Inc. Method for improved pre-metal planarization
US5635423A (en) * 1994-10-11 1997-06-03 Advanced Micro Devices, Inc. Simplified dual damascene process for multi-level metallization and interconnection structure
DE69533823D1 (de) * 1994-12-29 2005-01-05 St Microelectronics Inc Elektrische Verbindungsstruktur auf einer integrierten Schaltungsanordnung mit einem Zapfen mit vergrössertem Kopf
US5658829A (en) * 1995-02-21 1997-08-19 Micron Technology, Inc. Semiconductor processing method of forming an electrically conductive contact plug
US5970374A (en) * 1996-10-18 1999-10-19 Chartered Semiconductor Manufacturing Ltd. Method for forming contacts and vias with improved barrier metal step-coverage

Also Published As

Publication number Publication date
EP0811247B1 (de) 2002-09-11
KR19980702371A (ko) 1998-07-15
US5933754A (en) 1999-08-03
US5658829A (en) 1997-08-19
JPH11500272A (ja) 1999-01-06
DE69623598D1 (de) 2002-10-17
WO1996026542A1 (en) 1996-08-29
US6245671B1 (en) 2001-06-12
KR100399257B1 (ko) 2003-12-18
JP3593133B2 (ja) 2004-11-24
EP0811247A1 (de) 1997-12-10
DE69623598T2 (de) 2003-05-28

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Legal Events

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