KR980006127A - 금속배선 제조방법 - Google Patents
금속배선 제조방법 Download PDFInfo
- Publication number
- KR980006127A KR980006127A KR1019960024264A KR19960024264A KR980006127A KR 980006127 A KR980006127 A KR 980006127A KR 1019960024264 A KR1019960024264 A KR 1019960024264A KR 19960024264 A KR19960024264 A KR 19960024264A KR 980006127 A KR980006127 A KR 980006127A
- Authority
- KR
- South Korea
- Prior art keywords
- barrier metal
- metal layer
- layer
- plasma treatment
- aluminum alloy
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 4
- 238000000034 method Methods 0.000 title claims abstract 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 9
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 5
- 238000009832 plasma treatment Methods 0.000 claims abstract 5
- 229910018594 Si-Cu Inorganic materials 0.000 claims abstract 2
- 229910008465 Si—Cu Inorganic materials 0.000 claims abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000005530 etching Methods 0.000 claims abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract 2
- 239000010936 titanium Substances 0.000 claims abstract 2
- 229910052719 titanium Inorganic materials 0.000 claims abstract 2
- 238000000151 deposition Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체소자의 금속 배선 제조방법에 관한 것으로, 베리어 금속층으로 티타늄 또는 티타늄 나이트라이드막을 증착한 다음, 베리어 금속층의 표면에 SF6플라즈마 처리를 실시함으로써 베리어금속층의 표면에서 알루미늄 합금층으로 Al-Si-Cu층이 증착될때 실리콘 덩어리가 베리어 금속층의 표면에 잘성장되지 않게 되어 후속의 식각공정으로 알루미늄 합금층과 베리어 금속층을 식각할때 절연막 표면에 잔여물이 남는 것을 방지하는 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도 내지 제6도는 본 발명에 의해 베리어 금속층, 알루미늄 합금층 및 반사방지막으로 이루어지는 금속 배선을 제조하는 것을 도시한 단면도.
Claims (6)
- 반도체소자의 금속 배선 제조방법에 있어서, 절연막 상부에 베리어 금속층을 증착한다음, 상기 베리어 금속층의 표면에 SF6플라즈마 처리를 실시하는 단계와, 상기 베리어 금속층 상부면에 알루미늄 합금층, 반사방지층을 차례로 적층한다음, 그 상부에 감광막 패턴을 형성하는 단계와, 상기 감광막 패턴을 마스크로 이용하여 상기 반사방지막, 알루미늄 합금층 및 베리어 금속층을 순차적으로 식각하여 금속 배선을 형성하는 단계와, 상기 감광막 패턴을 제거하는 단계를 포함하는 금속 배선 제조 방법.
- 제1항에 있어서, 상기 베리어금속층은 티타늄 또는 나이트라이드막인 것을 특징으로 하는 금속 배선 제조방법.
- 제1항에 있어서, 상기 알루미늄 합금층은 Al-Si-Cu인 것을 특징으로 하는 금속 배선 제조방법.
- 제1항에 있어서, 상기 SF6플라즈마 처리는 SF6가 20-100SCCM의 양인 것을 특징으로 하는 금속 배선 제조방법.
- 제1항 또는 제4항에 있어서, 상기 SF6플라즈마 처리는 500-2000W의 소오스 파우어, 0-100W의 바이어스 파우어인 것을 특징으로 하는 금속 배선 제조방법.
- 제1항 또는 제4항에 있어서, 상기 SF6플라즈마 처리는 2.0-20.0mTorr의 압력에서 실시하는 것을 특징으로 하는 금속 배선 제조방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960024264A KR100203905B1 (ko) | 1996-06-27 | 1996-06-27 | 금속배선 제조방법 |
TW086107653A TW324110B (en) | 1996-06-27 | 1997-05-31 | Method for fabrication metal wire of semiconductor device |
US08/867,456 US5856238A (en) | 1996-06-27 | 1997-06-02 | Method for fabricating metal wire of semiconductor device |
JP9157025A JP2892337B2 (ja) | 1996-06-27 | 1997-06-13 | 半導体素子の金属配線製造方法 |
CN971119074A CN1094253C (zh) | 1996-06-27 | 1997-06-25 | 半导体装置之金属布线制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960024264A KR100203905B1 (ko) | 1996-06-27 | 1996-06-27 | 금속배선 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR980006127A true KR980006127A (ko) | 1998-03-30 |
KR100203905B1 KR100203905B1 (ko) | 1999-06-15 |
Family
ID=19463727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960024264A KR100203905B1 (ko) | 1996-06-27 | 1996-06-27 | 금속배선 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5856238A (ko) |
JP (1) | JP2892337B2 (ko) |
KR (1) | KR100203905B1 (ko) |
CN (1) | CN1094253C (ko) |
TW (1) | TW324110B (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5950107A (en) * | 1996-12-17 | 1999-09-07 | Intel Corporation | In-situ pre-ILD deposition treatment to improve ILD to metal adhesion |
KR100278652B1 (ko) * | 1998-01-13 | 2001-02-01 | 윤종용 | 반도체장치의텅스텐패턴형성방법 |
CN101154569B (zh) * | 2002-06-27 | 2014-05-14 | 东京毅力科创株式会社 | 等离子体处理方法 |
TWI292933B (en) * | 2004-03-17 | 2008-01-21 | Imec Inter Uni Micro Electr | Method of manufacturing a semiconductor device having damascene structures with air gaps |
KR100824621B1 (ko) * | 2006-11-27 | 2008-04-24 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속 배선 형성 방법 |
CN103887230B (zh) * | 2014-03-28 | 2016-08-31 | 中国电子科技集团公司第二十四研究所 | 等离子体刻蚀AlSi的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960001601B1 (ko) * | 1992-01-23 | 1996-02-02 | 삼성전자주식회사 | 반도체 장치의 접촉구 매몰방법 및 구조 |
JP2751820B2 (ja) * | 1994-02-28 | 1998-05-18 | 日本電気株式会社 | 半導体装置の製造方法 |
US5430328A (en) * | 1994-05-31 | 1995-07-04 | United Microelectronics Corporation | Process for self-align contact |
US5554254A (en) * | 1995-03-16 | 1996-09-10 | Taiwan Semiconductor Manufacturing Company | Post contact layer etch back process which prevents precipitate formation |
US5554563A (en) * | 1995-04-04 | 1996-09-10 | Taiwan Semiconductor Manufacturing Company | In situ hot bake treatment that prevents precipitate formation after a contact layer etch back step |
-
1996
- 1996-06-27 KR KR1019960024264A patent/KR100203905B1/ko not_active IP Right Cessation
-
1997
- 1997-05-31 TW TW086107653A patent/TW324110B/zh active
- 1997-06-02 US US08/867,456 patent/US5856238A/en not_active Expired - Fee Related
- 1997-06-13 JP JP9157025A patent/JP2892337B2/ja not_active Expired - Fee Related
- 1997-06-25 CN CN971119074A patent/CN1094253C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH1064916A (ja) | 1998-03-06 |
CN1177203A (zh) | 1998-03-25 |
CN1094253C (zh) | 2002-11-13 |
JP2892337B2 (ja) | 1999-05-17 |
KR100203905B1 (ko) | 1999-06-15 |
TW324110B (en) | 1998-01-01 |
US5856238A (en) | 1999-01-05 |
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E701 | Decision to grant or registration of patent right | ||
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FPAY | Annual fee payment |
Payment date: 20100224 Year of fee payment: 12 |
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LAPS | Lapse due to unpaid annual fee |