ITVA20020005A1 - Flusso di processo per la realizzazione di un transitore mos di potenza a trench di gate con canale di dimensioni scalate - Google Patents

Flusso di processo per la realizzazione di un transitore mos di potenza a trench di gate con canale di dimensioni scalate

Info

Publication number
ITVA20020005A1
ITVA20020005A1 IT2002VA000005A ITVA20020005A ITVA20020005A1 IT VA20020005 A1 ITVA20020005 A1 IT VA20020005A1 IT 2002VA000005 A IT2002VA000005 A IT 2002VA000005A IT VA20020005 A ITVA20020005 A IT VA20020005A IT VA20020005 A1 ITVA20020005 A1 IT VA20020005A1
Authority
IT
Italy
Prior art keywords
trench
creation
gate
channel
power
Prior art date
Application number
IT2002VA000005A
Other languages
English (en)
Inventor
Giuseppe Curro'
Barbara Fazio
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT2002VA000005A priority Critical patent/ITVA20020005A1/it
Publication of ITVA20020005A0 publication Critical patent/ITVA20020005A0/it
Priority to US10/351,281 priority patent/US6887760B2/en
Publication of ITVA20020005A1 publication Critical patent/ITVA20020005A1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IT2002VA000005A 2002-01-25 2002-01-25 Flusso di processo per la realizzazione di un transitore mos di potenza a trench di gate con canale di dimensioni scalate ITVA20020005A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT2002VA000005A ITVA20020005A1 (it) 2002-01-25 2002-01-25 Flusso di processo per la realizzazione di un transitore mos di potenza a trench di gate con canale di dimensioni scalate
US10/351,281 US6887760B2 (en) 2002-01-25 2003-01-24 Fabrication process of a trench gate power MOS transistor with scaled channel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2002VA000005A ITVA20020005A1 (it) 2002-01-25 2002-01-25 Flusso di processo per la realizzazione di un transitore mos di potenza a trench di gate con canale di dimensioni scalate

Publications (2)

Publication Number Publication Date
ITVA20020005A0 ITVA20020005A0 (it) 2002-01-25
ITVA20020005A1 true ITVA20020005A1 (it) 2003-07-25

Family

ID=11460891

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2002VA000005A ITVA20020005A1 (it) 2002-01-25 2002-01-25 Flusso di processo per la realizzazione di un transitore mos di potenza a trench di gate con canale di dimensioni scalate

Country Status (2)

Country Link
US (1) US6887760B2 (it)
IT (1) ITVA20020005A1 (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
KR100597459B1 (ko) * 2003-12-31 2006-07-05 동부일렉트로닉스 주식회사 반도체 소자의 게이트 전극형성방법
TWI431771B (zh) * 2004-10-07 2014-03-21 Fairchild Semiconductor 帶狀隙經設計之金屬氧化物半導體（ｍｏｓ）閘控功率電晶體
US7504691B2 (en) * 2004-10-07 2009-03-17 Fairchild Semiconductor Corporation Power trench MOSFETs having SiGe/Si channel structure
US7485941B2 (en) * 2004-12-15 2009-02-03 Tower Semiconductor Ltd. Cobalt silicide schottky diode on isolated well
US7544557B2 (en) * 2004-12-15 2009-06-09 Tower Semiconductor Ltd. Gate defined Schottky diode
US9685524B2 (en) * 2005-03-11 2017-06-20 Vishay-Siliconix Narrow semiconductor trench structure
US7189658B2 (en) 2005-05-04 2007-03-13 Applied Materials, Inc. Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile
KR100791773B1 (ko) * 2006-12-27 2008-01-04 동부일렉트로닉스 주식회사 트랜치 게이트 모스 소자 제조 방법
US7564096B2 (en) * 2007-02-09 2009-07-21 Fairchild Semiconductor Corporation Scalable power field effect transistor with improved heavy body structure and method of manufacture
JP2009054946A (ja) * 2007-08-29 2009-03-12 Seiko Instruments Inc 半導体装置とその製造方法
US7825465B2 (en) 2007-12-13 2010-11-02 Fairchild Semiconductor Corporation Structure and method for forming field effect transistor with low resistance channel region
KR101584097B1 (ko) * 2009-03-23 2016-01-12 삼성전자주식회사 매립 게이트 전극의 형성방법
US20120028425A1 (en) * 2010-08-02 2012-02-02 Hamilton Lu Methods for fabricating trench metal oxide semiconductor field effect transistors
US9184308B1 (en) * 2012-09-20 2015-11-10 Univerity of South Florida Devices having nanoscale structures and methods for making same
US9006063B2 (en) * 2013-06-28 2015-04-14 Stmicroelectronics S.R.L. Trench MOSFET
US10658486B2 (en) * 2017-05-18 2020-05-19 Taiwan Semiconductor Manufacutring Co., Ltd. Mitigation of time dependent dielectric breakdown
CN111987157A (zh) * 2019-05-24 2020-11-24 长鑫存储技术有限公司 沟槽阵列晶体管结构及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4997783A (en) * 1987-07-02 1991-03-05 Integrated Device Technology, Inc. Static ram cell with trench pull-down transistors and buried-layer ground plate
JP2623850B2 (ja) * 1989-08-25 1997-06-25 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
US20010001494A1 (en) * 1999-04-01 2001-05-24 Christopher B. Kocon Power trench mos-gated device and process for forming same
TW442972B (en) * 1999-10-01 2001-06-23 Anpec Electronics Corp Fabricating method of trench-type gate power metal oxide semiconductor field effect transistor
GB0010041D0 (en) * 2000-04-26 2000-06-14 Koninkl Philips Electronics Nv Trench semiconductor device manufacture

Also Published As

Publication number Publication date
US20030181011A1 (en) 2003-09-25
US6887760B2 (en) 2005-05-03
ITVA20020005A0 (it) 2002-01-25

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