ATE436089T1 - Verfahren zur herstellung von halbleiteranordnungen mit graben-gate - Google Patents

Verfahren zur herstellung von halbleiteranordnungen mit graben-gate

Info

Publication number
ATE436089T1
ATE436089T1 AT02734870T AT02734870T ATE436089T1 AT E436089 T1 ATE436089 T1 AT E436089T1 AT 02734870 T AT02734870 T AT 02734870T AT 02734870 T AT02734870 T AT 02734870T AT E436089 T1 ATE436089 T1 AT E436089T1
Authority
AT
Austria
Prior art keywords
mask
trench
gate
semiconductor devices
gate semiconductor
Prior art date
Application number
AT02734870T
Other languages
English (en)
Inventor
T Zand Michael In
Erwin Hijzen
Raymond Hueting
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE436089T1 publication Critical patent/ATE436089T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66719—With a step of forming an insulating sidewall spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Drying Of Semiconductors (AREA)
AT02734870T 2001-01-23 2002-01-10 Verfahren zur herstellung von halbleiteranordnungen mit graben-gate ATE436089T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0101695.5A GB0101695D0 (en) 2001-01-23 2001-01-23 Manufacture of trench-gate semiconductor devices
PCT/IB2002/000048 WO2002059957A1 (en) 2001-01-23 2002-01-10 Manufacture of trench-gate semiconductor devices

Publications (1)

Publication Number Publication Date
ATE436089T1 true ATE436089T1 (de) 2009-07-15

Family

ID=9907321

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02734870T ATE436089T1 (de) 2001-01-23 2002-01-10 Verfahren zur herstellung von halbleiteranordnungen mit graben-gate

Country Status (9)

Country Link
US (1) US6521498B2 (de)
EP (1) EP1356506B1 (de)
JP (1) JP4198465B2 (de)
KR (1) KR100834269B1 (de)
AT (1) ATE436089T1 (de)
DE (1) DE60232855D1 (de)
GB (1) GB0101695D0 (de)
TW (1) TW541630B (de)
WO (1) WO2002059957A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4932088B2 (ja) 2001-02-19 2012-05-16 ルネサスエレクトロニクス株式会社 絶縁ゲート型半導体装置の製造方法
JP2004055803A (ja) * 2002-07-19 2004-02-19 Renesas Technology Corp 半導体装置
US6753228B2 (en) * 2002-10-15 2004-06-22 Semiconductor Components Industries, L.L.C. Method of forming a low resistance semiconductor device and structure therefor
US6873003B2 (en) * 2003-03-06 2005-03-29 Infineon Technologies Aktiengesellschaft Nonvolatile memory cell
US7393081B2 (en) * 2003-06-30 2008-07-01 Semiconductor Energy Laboratory Co., Ltd. Droplet jetting device and method of manufacturing pattern
US6913977B2 (en) * 2003-09-08 2005-07-05 Siliconix Incorporated Triple-diffused trench MOSFET and method of fabricating the same
KR100500473B1 (ko) * 2003-10-22 2005-07-12 삼성전자주식회사 반도체 소자에서의 리세스 게이트 트랜지스터 구조 및형성방법
US7786531B2 (en) * 2005-03-18 2010-08-31 Alpha & Omega Semiconductor Ltd. MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification
JP2008098593A (ja) * 2006-09-15 2008-04-24 Ricoh Co Ltd 半導体装置及びその製造方法
KR100861174B1 (ko) * 2006-10-31 2008-09-30 주식회사 하이닉스반도체 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법
JP2008218711A (ja) * 2007-03-05 2008-09-18 Renesas Technology Corp 半導体装置およびその製造方法、ならびに電源装置
US7902017B2 (en) * 2008-12-17 2011-03-08 Semiconductor Components Industries, Llc Process of forming an electronic device including a trench and a conductive structure therein
US8426275B2 (en) * 2009-01-09 2013-04-23 Niko Semiconductor Co., Ltd. Fabrication method of trenched power MOSFET
KR101649967B1 (ko) 2010-05-04 2016-08-23 삼성전자주식회사 이-퓨즈 구조체를 포함하는 반도체 소자 및 그 제조 방법
US8377813B2 (en) * 2010-08-27 2013-02-19 Rexchip Electronics Corporation Split word line fabrication process
CN116779664A (zh) * 2023-08-22 2023-09-19 深圳芯能半导体技术有限公司 一种具电极间电容结构的igbt芯片及其制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9306895D0 (en) * 1993-04-01 1993-05-26 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
JP3155894B2 (ja) * 1994-09-29 2001-04-16 株式会社東芝 半導体装置およびその製造方法
DE19545903C2 (de) * 1995-12-08 1997-09-18 Siemens Ag Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung
DE19600422C1 (de) * 1996-01-08 1997-08-21 Siemens Ag Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung
JP4077529B2 (ja) * 1996-05-22 2008-04-16 フェアチャイルドコリア半導体株式会社 トレンチ拡散ｍｏｓトランジスタの製造方法
US5972741A (en) * 1996-10-31 1999-10-26 Sanyo Electric Co., Ltd. Method of manufacturing semiconductor device
DE19646419C1 (de) * 1996-11-11 1998-04-30 Siemens Ag Verfahren zur Herstellung einer elektrisch schreib- und löschbaren Festwertspeicherzellenanordnung
US6096608A (en) * 1997-06-30 2000-08-01 Siliconix Incorporated Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench
US6177299B1 (en) * 1998-01-15 2001-01-23 International Business Machines Corporation Transistor having substantially isolated body and method of making the same

Also Published As

Publication number Publication date
EP1356506A1 (de) 2003-10-29
US6521498B2 (en) 2003-02-18
GB0101695D0 (en) 2001-03-07
US20020137291A1 (en) 2002-09-26
JP2004518292A (ja) 2004-06-17
KR20020092391A (ko) 2002-12-11
WO2002059957A1 (en) 2002-08-01
DE60232855D1 (de) 2009-08-20
EP1356506B1 (de) 2009-07-08
KR100834269B1 (ko) 2008-05-30
TW541630B (en) 2003-07-11
JP4198465B2 (ja) 2008-12-17

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