TW200608467A - Method for fabricating semiconductor device - Google Patents

Method for fabricating semiconductor device

Info

Publication number
TW200608467A
TW200608467A TW093124836A TW93124836A TW200608467A TW 200608467 A TW200608467 A TW 200608467A TW 093124836 A TW093124836 A TW 093124836A TW 93124836 A TW93124836 A TW 93124836A TW 200608467 A TW200608467 A TW 200608467A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
stress
fabricating semiconductor
high stress
layer
Prior art date
Application number
TW093124836A
Other languages
Chinese (zh)
Other versions
TWI234188B (en
Inventor
Cha-Hsin Lin
Zing-Way Pei
Shing-Chii Lu
Wen-Yi Hsieh
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW093124836A priority Critical patent/TWI234188B/en
Priority to US11/018,242 priority patent/US7033899B2/en
Application granted granted Critical
Publication of TWI234188B publication Critical patent/TWI234188B/en
Priority to US11/300,481 priority patent/US7347228B2/en
Publication of TW200608467A publication Critical patent/TW200608467A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A method for fabricating semiconductor device is provided. A high stress layer formed above, below or on both side of the transistors of the semiconductor device is employed as a cap layer. A specific region is then defined through photo resistor mask, and the stress of the region is changed by ion implanting. Therefore, compressive stress and tensile stress occur on the high stress layer. According the disclosed method, the high stress layer may simultaneously improve the characteristics of the transistors formed on the same wafer. Further, the mobility of the carriers of the device is enhanced.
TW093124836A 2004-08-18 2004-08-18 Method for fabricating semiconductor device TWI234188B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW093124836A TWI234188B (en) 2004-08-18 2004-08-18 Method for fabricating semiconductor device
US11/018,242 US7033899B2 (en) 2004-08-18 2004-12-22 Method of making semiconductor devices
US11/300,481 US7347228B2 (en) 2004-08-18 2005-12-15 Method of making semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093124836A TWI234188B (en) 2004-08-18 2004-08-18 Method for fabricating semiconductor device

Publications (2)

Publication Number Publication Date
TWI234188B TWI234188B (en) 2005-06-11
TW200608467A true TW200608467A (en) 2006-03-01

Family

ID=35910154

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093124836A TWI234188B (en) 2004-08-18 2004-08-18 Method for fabricating semiconductor device

Country Status (2)

Country Link
US (2) US7033899B2 (en)
TW (1) TWI234188B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066611A (en) * 2004-08-26 2006-03-09 Toshiba Corp Semiconductor device
TWI241664B (en) * 2005-01-14 2005-10-11 Ind Tech Res Inst Method for fabricating semiconductor device
FR2890782B1 (en) * 2005-09-14 2008-02-29 St Microelectronics Crolles 2 SEMICONDUCTOR DEVICE COMPRISING AT LEAST ONE MOS TRANSISTOR COMPRISING AN ETCH STOPPING LAYER AND CORRESPONDING FABRICATION METHOD.
KR100865548B1 (en) * 2006-12-28 2008-10-28 주식회사 하이닉스반도체 Method for fabricating semiconductor device
CN103183307B (en) * 2011-12-28 2016-04-20 中国科学院微电子研究所 Tensile stress LPCVD SiO 2the manufacture method of film
US9049061B2 (en) * 2012-03-21 2015-06-02 The Institute of Microelectronics Chinese Academy of Science CMOS device and method for manufacturing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5556793A (en) * 1992-02-28 1996-09-17 Motorola, Inc. Method of making a structure for top surface gettering of metallic impurities
JPH0969494A (en) * 1995-08-31 1997-03-11 Texas Instr Japan Ltd Manufacture of semiconductor device
JPH113869A (en) * 1997-06-11 1999-01-06 Nec Corp Semiconductor device and manufacture thereof
TWI313059B (en) * 2000-12-08 2009-08-01 Sony Corporatio
JP3494638B2 (en) * 2002-05-21 2004-02-09 沖電気工業株式会社 Semiconductor device and method of manufacturing semiconductor device
TW200520170A (en) * 2003-06-06 2005-06-16 Northrop Grumman Corp Coiled memory device and method of making the same

Also Published As

Publication number Publication date
US20060094135A1 (en) 2006-05-04
US20060040479A1 (en) 2006-02-23
US7033899B2 (en) 2006-04-25
TWI234188B (en) 2005-06-11
US7347228B2 (en) 2008-03-25

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees