JP5379045B2 - トレンチ金属酸化膜半導体素子 - Google Patents
トレンチ金属酸化膜半導体素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 33
- 150000004706 metal oxides Chemical class 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 125000006850 spacer group Chemical group 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 237
- 239000012535 impurity Substances 0.000 claims description 42
- 239000011529 conductive interlayer Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims 2
- 238000000034 method Methods 0.000 description 42
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Description
(1)空乏境界が平坦であり、空乏境界の湾曲領域を活性領域から遠く離すことができる。このような特性により早期の電圧降伏現象を防止することができる。
(2)本発明に基づく終端構造に逆バイアス電圧を印加することにより生じる漏れ電流は、従来のLOCOS及びガードリングにより構成される終端構造より小さい(8.8%対12.8%)。
(3)本発明に基づく終端構造を有するトレンチMOS素子は、従来より単純なプロセスで製造できる。本発明によれば、フォトマスクプロセスを減らすことができる。
Claims (10)
- 終端構造を有するトレンチ金属酸化膜半導体素子において、
第1のトレンチ及び第2のトレンチが形成された半導体基板と、
上記第1のトレンチ内に形成された第1の金属酸化膜半導体ゲート及び上記第2のトレンチの側壁にスペーサとして形成された第2の金属酸化膜半導体ゲートと、
上記スペーサの一部及び上記第2のトレンチの底面を覆うように該第2のトレンチ内に形成された終端構造酸化層と、
上記半導体基板の背面に第1の電極を形成し、該半導体基板の表面に第2の電極を形成する導電層とを備え、
上記第2の電極は、活性領域及び導電層間酸化層を介して上記スペーサに接続し、空乏領域の湾曲領域が該活性領域の境界から所定の長さ離間するように、該活性領域、該スペーサ及び上記終端構造酸化層の一部を覆うように形成され、
上記第1のトレンチは、上記活性領域内に形成され、上記第2のトレンチは、該活性領域の境界から上記半導体基板の端部に亘って形成され、
上記半導体基板は、最上面に形成され、p型導電性不純物が高濃度にドープされた第1の層と、該第1の層の下層に形成され、p型導電性不純物が低濃度にドープされた第2の層と、該第2の層の下層に形成され、n型導電性不純物が低濃度にドープされた第3の層と、該第3の層の下層に形成され、n型導電性不純物が高濃度にドープされたベース基板と、該第1の層の内部及び該第2の層の上部にn型導電性不純物を高濃度にドープして形成された複数の領域とを有する二重拡散金属酸化膜半導体素子用の半導体基板であることを特徴とするトレンチ金属酸化膜半導体素子。 - 終端構造を有するトレンチ金属酸化膜半導体素子において、
第1のトレンチ及び第2のトレンチが形成された半導体基板と、
上記第1のトレンチ内に形成された第1の金属酸化膜半導体ゲート及び上記第2のトレンチの側壁にスペーサとして形成された第2の金属酸化膜半導体ゲートと、
上記スペーサの一部及び上記第2のトレンチの底面を覆うように該第2のトレンチ内に形成された終端構造酸化層と、
上記半導体基板の背面に第1の電極を形成し、該半導体基板の表面に第2の電極を形成する導電層とを備え、
上記第2の電極は、活性領域及び導電層間酸化層を介して上記スペーサに接続し、空乏領域の湾曲領域が該活性領域の境界から所定の長さ離間するように、該活性領域、該スペーサ及び上記終端構造酸化層の一部を覆うように形成され、
上記第1のトレンチは、上記活性領域内に形成され、上記第2のトレンチは、該活性領域の境界から上記半導体基板の端部に亘って形成され、
上記半導体基板は、最上層に形成され、p型導電性不純物が高濃度にドープされた第1の層と、該第1の層の下層に形成され、p型導電性不純物が低濃度にドープされた第2の層と、該第2の層の下層に形成され、n型導電性不純物が低濃度にドープされた第3の層と、該第3の層の下層に形成され、n型導電性不純物が高濃度にドープされた第4の層と、該第4の層の下層に形成され、p型導電性不純物が高濃度にドープされたベース基板と、該第1の層の内部及び該第2の層の上部にn型導電性不純物を高濃度にドープして形成された複数の領域とを有する絶縁ゲート型バイポーラトランジスタ素子用の半導体基板であることを特徴とするトレンチ金属酸化膜半導体素子。 - 上記第1の金属酸化膜半導体ゲート及び上記第2の金属酸化膜半導体ゲートは、
上記第1のトレンチ並びに上記第2のトレンチの底面及び側壁に形成されたゲート酸化層と、
上記ゲート酸化層上に形成され、上記第1のトレンチ及び上記第2のトレンチを埋める第1の導電層とを備える請求項1又は請求項2記載のトレンチ金属酸化膜半導体素子。 - 上記第1の導電層は、金属、多結晶シリコン及び非晶質シリコンからなるグループから選択された材料から形成されることを特徴とする請求項1又は請求項2記載のトレンチ金属酸化膜半導体素子。
- 上記第1の金属酸化膜半導体ゲートは、上記第1の導電層を上記第1の電極から分離する導電層間酸化層を表面に備えることを特徴とする請求項1又は請求項2記載のトレンチ金属酸化膜半導体素子。
- 上記第1の層及び上記第2の層の厚さは、0.5μm〜5.0μmであり、上記第3の層の厚さは、3.0μm〜30.0μmであることを特徴とする請求項1又は請求項2記載のトレンチ金属酸化膜半導体素子。
- 終端構造を有するトレンチ金属酸化膜半導体素子において、
活性領域内に互いに離間して形成された複数の第1のトレンチと、該活性領域の境界から半導体基板の端部に亘って形成された第2のトレンチとを有する半導体基板と、
上記各第1のトレンチに形成された第1の金属酸化膜半導体ゲート及び上記第2のトレンチの側壁にスペーサとして形成された第2の金属酸化膜半導体ゲートと、
上記スペーサの一部及び上記第2のトレンチの底面を覆うように該第2のトレンチ内に形成された終端構造酸化層と、
上記半導体基板の背面に第1の電極を形成し、該半導体基板の表面に第2の電極を形成する導電層とを備え、
上記第2の電極は、上記活性領域及び導電層間酸化層を介して上記スペーサに接続し、該第2の電極の端部が該活性領域の境界から少なくとも2μm離間するように上記第2のトレンチに延出して、該活性領域、該スペーサ及び上記終端構造酸化層の一部を覆うように形成され、
上記第1のトレンチは、上記活性領域内に形成され、上記第2のトレンチは、該活性領域の境界から上記半導体基板の端部に亘って形成され、
上記半導体基板は、最上面に形成され、p型導電性不純物が高濃度にドープされた第1の層と、該第1の層の下層に形成され、p型導電性不純物が低濃度にドープされた第2の層と、該第2の層の下層に形成され、n型導電性不純物が低濃度にドープされた第3の層と、該第3の層の下層に形成され、n型導電性不純物が高濃度にドープされたベース基板と、該第1の層の内部及び該第2の層の上部にn型導電性不純物を高濃度にドープして形成された複数の領域とを有する二重拡散金属酸化膜半導体素子用の半導体基板であることを特徴とするトレンチ金属酸化膜半導体素子。 - 終端構造付きのトレンチ金属酸化膜半導体素子において、
活性領域内に互いに離間して形成された複数の第1のトレンチと、該活性領域の境界から半導体基板の端部に亘って形成された第2のトレンチとを有する半導体基板と、
上記各第1のトレンチに形成された第1の金属酸化膜半導体ゲート及び上記第2のトレンチの側壁にスペーサとして形成された第2の金属酸化膜半導体ゲートと、
上記スペーサの一部及び上記第2のトレンチの底面を覆うように該第2のトレンチ内に形成された終端構造酸化層と、
上記半導体基板の背面に第1の電極を形成し、該半導体基板の表面に第2の電極を形成する導電層とを備え、
上記第2の電極は、上記活性領域及び導電層間酸化層を介して上記スペーサに接続し、該第2の電極の端部が該活性領域の境界から少なくとも2μm離間するように上記第2のトレンチに延出して、該活性領域、該スペーサ及び上記終端構造酸化層の一部を覆うように形成され、
上記第1のトレンチは、上記活性領域内に形成され、上記第2のトレンチは、該活性領域の境界から上記半導体基板の端部に亘って形成され、
上記半導体基板は、最上層に形成され、p型導電性不純物が高濃度にドープされた第1の層と、該第1の層の下層に形成され、p型導電性不純物が低濃度にドープされた第2の層と、該第2の層の下層に形成され、n型導電性不純物が低濃度にドープされた第3の層と、該第3の層の下層に形成され、n型導電性不純物が高濃度にドープされた第4の層と、該第4の層の下層に形成され、p型導電性不純物が高濃度にドープされたベース基板と、該第1の層の内部及び該第2の層の上部にn型導電性不純物を高濃度にドープして形成された複数の領域とを有する絶縁ゲート型バイポーラトランジスタ素子用の半導体基板であることを特徴とするトレンチ金属酸化膜半導体素子。 - 上記第1の金属酸化膜半導体ゲート及び上記第2の金属酸化膜半導体ゲートは、
上記第1のトレンチ並びに上記第2のトレンチの底面及び側壁に形成されたゲート酸化層と、
上記ゲート酸化層上に形成され、上記第1のトレンチ及び上記第2のトレンチを埋める第1の導電層とを備えることを特徴とする請求項7又は請求項8記載のトレンチ金属酸化膜半導体素子。 - 上記第1の導電層は、金属、多結晶シリコン及び非晶質シリコンからなるグループから選択された材料から形成されることを特徴とする請求項7又は請求項8記載のトレンチ金属酸化膜半導体素子。
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US6396090B1 (en) | 2002-05-28 |
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JP2010157761A (ja) | 2010-07-15 |
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