CN110277375A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN110277375A CN110277375A CN201810895777.7A CN201810895777A CN110277375A CN 110277375 A CN110277375 A CN 110277375A CN 201810895777 A CN201810895777 A CN 201810895777A CN 110277375 A CN110277375 A CN 110277375A
- Authority
- CN
- China
- Prior art keywords
- substrate
- semiconductor device
- face
- metal layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 239000010410 layer Substances 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 230000005260 alpha ray Effects 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 239000012790 adhesive layer Substances 0.000 claims abstract description 11
- 239000007769 metal material Substances 0.000 claims abstract description 6
- 229920005989 resin Polymers 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 15
- 229910000679 solder Inorganic materials 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000003365 glass fiber Substances 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 4
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 claims description 2
- 230000002285 radioactive effect Effects 0.000 abstract description 5
- 230000015654 memory Effects 0.000 description 49
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000003475 lamination Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 101100008641 Mus musculus Cd55b gene Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101100008639 Mus musculus Cd55 gene Proteins 0.000 description 1
- 101100182528 Oryza sativa subsp. japonica LECRKS7 gene Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 101100059702 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CLN3 gene Proteins 0.000 description 1
- 101100010189 Schizosaccharomyces pombe (strain 972 / ATCC 24843) dpb3 gene Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L25/0657—Stacked arrangements of devices
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- H01L23/293—Organic, e.g. plastic
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- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
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- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/143—Digital devices
- H01L2924/1434—Memory
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Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2018048194A JP2019161105A (ja) | 2018-03-15 | 2018-03-15 | 半導体装置 |
JP2018-048194 | 2018-03-15 |
Publications (2)
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CN110277375A true CN110277375A (zh) | 2019-09-24 |
CN110277375B CN110277375B (zh) | 2023-08-22 |
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CN201810895777.7A Active CN110277375B (zh) | 2018-03-15 | 2018-08-08 | 半导体装置 |
Country Status (4)
Country | Link |
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US (1) | US10916508B2 (zh) |
JP (1) | JP2019161105A (zh) |
CN (1) | CN110277375B (zh) |
TW (1) | TWI692067B (zh) |
Families Citing this family (3)
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JP2020038902A (ja) * | 2018-09-04 | 2020-03-12 | キオクシア株式会社 | 半導体装置 |
JP2020047714A (ja) * | 2018-09-18 | 2020-03-26 | キオクシア株式会社 | 半導体メモリおよびその製造方法 |
US11244844B2 (en) | 2018-10-26 | 2022-02-08 | Applied Materials, Inc. | High flow velocity, gas-purged, side storage pod apparatus, assemblies, and methods |
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JPS55143053A (en) * | 1979-04-25 | 1980-11-08 | Hitachi Ltd | Semiconductor device |
US5264726A (en) * | 1989-07-21 | 1993-11-23 | Nec Corporation | Chip-carrier |
JP2000058598A (ja) * | 1998-08-13 | 2000-02-25 | Citizen Watch Co Ltd | 半導体装置の実装構造および実装方法 |
CN103703549A (zh) * | 2011-04-05 | 2014-04-02 | 德克萨斯仪器股份有限公司 | 用于直接表面安装的裸露芯片封装 |
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JPS63262867A (ja) | 1987-04-20 | 1988-10-31 | Nec Corp | 半導体記憶装置 |
JPS6457650A (en) | 1987-08-27 | 1989-03-03 | Hitachi Ltd | Semiconductor device |
JPH04179150A (ja) * | 1990-11-09 | 1992-06-25 | Nec Yamagata Ltd | 半導体封止用容器 |
JP2932840B2 (ja) * | 1992-08-06 | 1999-08-09 | 日本電気株式会社 | 半導体素子のボンディング方法 |
JP2990968B2 (ja) * | 1992-09-17 | 1999-12-13 | 富士通株式会社 | 半導体チップの実装構造 |
JPH0936315A (ja) | 1995-07-13 | 1997-02-07 | Sony Corp | 半導体装置 |
TW434646B (en) | 1997-11-21 | 2001-05-16 | Rohm Co Ltd | Semiconductor device and method for making the same |
JP3394029B2 (ja) * | 2000-03-21 | 2003-04-07 | 大塚化学株式会社 | 難燃性エポキシ樹脂組成物、及びその成形物、及び電子部品 |
JP2003332508A (ja) * | 2002-05-16 | 2003-11-21 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP2004079886A (ja) * | 2002-08-21 | 2004-03-11 | Toshiba Corp | 実装体の製造方法、半導体装置及び実装体 |
US7223630B2 (en) * | 2004-12-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low stress semiconductor device coating and method of forming thereof |
US7221055B2 (en) * | 2005-05-23 | 2007-05-22 | Texas Instruments Incorporated | System and method for die attach using a backside heat spreader |
JP4954569B2 (ja) * | 2006-02-16 | 2012-06-20 | 日東電工株式会社 | 半導体装置の製造方法 |
US7910156B2 (en) * | 2007-03-30 | 2011-03-22 | Endicott Interconnect Technologies, Inc. | Method of making circuitized substrate with selected conductors having solder thereon |
JP4431628B1 (ja) | 2008-06-05 | 2010-03-17 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
KR20140057982A (ko) * | 2012-11-05 | 2014-05-14 | 삼성전자주식회사 | 반도체 패키지 및 반도체 패키지의 제조 방법 |
CN105789066A (zh) * | 2016-05-09 | 2016-07-20 | 南通富士通微电子股份有限公司 | 一种半导体封装结构的制造方法 |
-
2018
- 2018-03-15 JP JP2018048194A patent/JP2019161105A/ja active Pending
- 2018-07-18 TW TW107124766A patent/TWI692067B/zh active
- 2018-08-08 CN CN201810895777.7A patent/CN110277375B/zh active Active
- 2018-08-27 US US16/114,053 patent/US10916508B2/en active Active
Patent Citations (4)
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JPS55143053A (en) * | 1979-04-25 | 1980-11-08 | Hitachi Ltd | Semiconductor device |
US5264726A (en) * | 1989-07-21 | 1993-11-23 | Nec Corporation | Chip-carrier |
JP2000058598A (ja) * | 1998-08-13 | 2000-02-25 | Citizen Watch Co Ltd | 半導体装置の実装構造および実装方法 |
CN103703549A (zh) * | 2011-04-05 | 2014-04-02 | 德克萨斯仪器股份有限公司 | 用于直接表面安装的裸露芯片封装 |
Also Published As
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TW201939687A (zh) | 2019-10-01 |
JP2019161105A (ja) | 2019-09-19 |
US10916508B2 (en) | 2021-02-09 |
TWI692067B (zh) | 2020-04-21 |
CN110277375B (zh) | 2023-08-22 |
US20190287922A1 (en) | 2019-09-19 |
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