JPS6457650A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6457650A JPS6457650A JP62214570A JP21457087A JPS6457650A JP S6457650 A JPS6457650 A JP S6457650A JP 62214570 A JP62214570 A JP 62214570A JP 21457087 A JP21457087 A JP 21457087A JP S6457650 A JPS6457650 A JP S6457650A
- Authority
- JP
- Japan
- Prior art keywords
- salient
- semiconductor chip
- electrodes
- ray
- coating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE:To prevent the soft error in a semiconductor device of salient electrode mounting system, and lengthen the connecting life of the salient electrode, by arranging a coating film for shielding alpha-ray on a semiconductor chip or a specified part of a mounting substrate surface excepting salient electrode parts. CONSTITUTION:A coating film 3 for shielding alpha-ray is arranged on a semiconductor chip 1 or a specified part of a mounting substrate surface excepting salient electrode parts 4 for face down bonding. For example, only the surface of a memory mat region 2, which is especially weak for soft error in the semiconductor chip 1 of a semiconductor device having an element in which both bipolar transistors and COMS's exist, is coated with a coating film 3 for shielding alpha-ray which is composed of polyimide resin. The part of the salient electrodes 4 composed of solder bump and the like are not coated. The semiconductor chip 1 is mounted on the mounting substrate 5 via the salient electrodes 4. As a result, difference of thermal expansion coefficient between the protruding electrodes and the resin does not exert influence upon the salient electrodes. Thereby lengthening connection of life of the salient electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62214570A JPS6457650A (en) | 1987-08-27 | 1987-08-27 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62214570A JPS6457650A (en) | 1987-08-27 | 1987-08-27 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6457650A true JPS6457650A (en) | 1989-03-03 |
Family
ID=16657902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62214570A Pending JPS6457650A (en) | 1987-08-27 | 1987-08-27 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6457650A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10916508B2 (en) | 2018-03-15 | 2021-02-09 | Toshiba Memory Corporation | Semiconductor device package with radiation shield |
-
1987
- 1987-08-27 JP JP62214570A patent/JPS6457650A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10916508B2 (en) | 2018-03-15 | 2021-02-09 | Toshiba Memory Corporation | Semiconductor device package with radiation shield |
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