CN106847937A - 用于制造具有隧道电介质层的太阳能电池的方法 - Google Patents

用于制造具有隧道电介质层的太阳能电池的方法 Download PDF

Info

Publication number
CN106847937A
CN106847937A CN201610834756.5A CN201610834756A CN106847937A CN 106847937 A CN106847937 A CN 106847937A CN 201610834756 A CN201610834756 A CN 201610834756A CN 106847937 A CN106847937 A CN 106847937A
Authority
CN
China
Prior art keywords
temperature
substrate
solar cell
degrees celsius
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610834756.5A
Other languages
English (en)
Inventor
蒂姆·丹尼斯
斯科特·哈林顿
简·曼宁
大卫·史密斯
安·瓦尔德豪尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunPower Corp
Original Assignee
SunPower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunPower Corp filed Critical SunPower Corp
Publication of CN106847937A publication Critical patent/CN106847937A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)

Abstract

本文描述了制造具有隧道电介质层的太阳能电池的方法，以及具有隧道电介质层的太阳能电池。

Description

用于制造具有隧道电介质层的太阳能电池的方法
本申请是基于申请日为2011年04月27日、申请号为201180032583.0(国际申请号为PCT/US2011/034089)、发明创造名称为“用于制造具有隧道电介质层的太阳能电池的方法”的中国专利申请的分案申请。
本文所述的发明是在政府的支持下按照美国能源部颁发的合同号DE-FC36-07GO17043完成的。政府在本发明中可能具有一定的权利。
技术领域
本发明的实施例是在可再生能源领域，特别是用于制造具有隧道电介质层的太阳能电池的方法。
背景技术
光伏电池(一般称为太阳能电池)是公知的用于将太阳辐射直接转换成电能的设备。一般来说，太阳能电池是在半导体晶片或衬底上使用半导体加工技术在衬底表面附近形成pn结来制造的。撞击在在衬底表面上的太阳辐射在衬底主体中产生电子和空穴对(其在衬底中迁移到p型掺杂区和n型掺杂区)，从而在掺杂区之间产生电压差。掺杂区被连接到太阳能电池上的金属触点，以将电流从电池导向与其耦合的外部电路。
效率是太阳能电池的重要特征，因为其与太阳能电池的发电能力直接相关。因此，能够提高太阳能电池效率的技术总是所希望的。本发明的实施例通过提供制造太阳能电池结构的新颖工艺提高了太阳能电池的效率。
附图说明
图1示出了常规工艺的模型热预算(thermal budget)，用于同根据本发明实施例的用于在太阳能电池中制造隧道电介质层的降低的热预算工艺进行对比。
图2示出了代表根据本发明实施例制造具有隧道电介质层的太阳能电池的方法的操作的流程图。
图3A示出根据本发明的一个实施例在制造包括隧道电介质层的太阳能电池的一个阶段的剖视图。
图3B示出根据本发明的一个实施例在制造包括隧道电介质层的太阳能电池的过程中与图2流程的操作202和图4流程的操作402相对应的阶段的剖视图。
图3C示出根据本发明的一个实施例在制造包括隧道电介质层的太阳能电池的过程中与图2流程的操作204和图4流程的操作404相对应的阶段的剖视图。
图4示出了代表根据本发明实施例制造具有隧道电介质层的太阳能电池的方法的操作的流程图。
图5A示出根据本发明的一个实施例在结合水化和热生长操作之后的隧道氧化物厚度的曲线图。
图5B示出根据本发明的一个实施例在结合水化和热生长操作之后的氧化物厚度的标准差的曲线图。
图6A示出根据本发明的一个实施例的作为隧道电介质层的水化薄膜成分的厚度的函数的少数载流子寿命的曲线图。
图6B示出根据本发明的一个实施例经过水化及热工艺组合的氧化物形成后的晶片的寿命的光致发光结果。
具体实施方式
本文描述了制造具有隧道电介质层的太阳能电池的方法。在下文的说明中阐述了许多具体细节(诸如具体的工艺流程操作)，以便提供对本发明的实施例的透彻理解。对于本领域技术人员来说，显然可以不利用这些具体细节来实现本发明的实施例。在其它实例中，没有对公知的制造技术(如光刻技术和蚀刻技术)进行详细描述，以免不必要地模糊本发明的实施例。此外应当理解，附图中示出的各种实施例为示例性表示并且不一定按比例绘制。
本文公开了具有隧道电介质层的太阳能电池的制造方法。在一个实施例中，制造太阳能电池的方法包括将太阳能电池的衬底表面暴露到湿化学溶液中，以在衬底表面上提供氧化物层。然后在干燥气氛中以接近或超过900摄氏度的温度加热氧化物层，以将氧化物层转换成太阳能电池的隧道电介质层。在一个实施例中，制造太阳能电池的方法包括在低于摄氏600度的温度下，通过热氧化在太阳能电池的衬底表面上形成氧化物层。然后在干燥气氛中以接近或超过900摄氏度的温度加热该氧化物层，以将氧化物层转换成太阳能电池的隧道电介质层。
本文还公开了太阳能电池。在一个实施例中，太阳能电池包括衬底。隧道电介质层设置在衬底上，通过仅在摄氏900度附近或更高的温度加热氧化物层一次来形成该隧道电介质层。
根据本发明的一个实施例，多晶硅/隧道氧化工艺中的热预算被减小。例如在普通工艺中，隧道氧化层可在较低的压力下在约900摄氏度生长。然而，在一个实施例中，已经发现这种方法不足以获得最佳效率，因为热预算较高。较高的热预算会不利地增加循环时间和设备的磨损，这两个因素会提高整体生产成本。在一个特定实施例中，已经发现，传统方法会导致多晶硅沉积工艺中的高循环时间。
根据本发明的一个实施例，隧道电介质层包括在太阳能电池中以阻挡少数载流子。在一个实施例中，隧道电介质层的厚度为约15埃。然而，在常规情况下形成这种隧道电介质层所需的热预算可能会加速在太阳能电池单元的其他部分(例如整块衬底的衬底、背接触太阳能电池)形成缺陷。因此，在应用传统的方法时，有可能在通过包括隧道电介质层所提供的益处与制造这样的层通常需要增加的热预算的破坏性影响之间取得折衷。因此，根据本发明的一个实施例，本发明提供的方法允许制造用于高效率太阳能电池设计中的隧道电介质层，并且具有减小的热预算。在一个实施例中，通过减少热预算，能够减少或减轻由于热暴露加剧而增加的缺陷。在一个特定的实施例中，用于提供隧道电介质层的制造工艺被限制为在接近或小于700摄氏度的温度下进行，在整个工艺中仅应用一次900摄氏度附近或更高的温度下的工艺。在一个特定的实施例中，这种方法也减少了总循环时间，提高了在线制造太阳能电池的效率。
在一个实施例中，在太阳能电池的制造中改进了用于具有多晶硅触点的隧道结构的薄氧化硅(包括二氧化硅(SiO2))层的生长。例如，这种改进可包括一个或多个以下的膜属性：高性能并且较薄的隧道介电薄膜、可控厚度、可控质量、缩短的工艺循环时间和降低的工艺热预算。在一个实施例中，通过施加一个或多个本文描述的方法，可以在相对低的温度下(例如以降低的热预算)并以较短的循环时间在较宽的衬底上实现具有良好厚度控制的非常薄的氧化硅(例如，二氧化硅)隧道氧化物。在一个实施例中，在工艺炉中使用约为565摄氏度的峰值温度和减少了约1.5小时的循环时间。在一个实施例中，形成的水化氧化物使得晶片不太容易受到污染。上述实施例与包括在约900度摄氏和约500毫托的压强下进行生长的传统方法形成对比。
在根据本发明的一个实施例中，使用水化和热氧化生长的组合来实现较薄并且高品质的氧化膜。在一个实施例中，氧化膜的厚度大约是在1-2纳米的范围内。在一个实施例中，使用氧化剂、溶液化学物和照射的组合来增加的氧化物的生长率，并且在该工艺的水化生长部分期间改善厚度的均匀性。在一个实施例中，所形成的氧化物随后在一个低温热操作期间进一步加厚，这同时提高了氧化物的水化生长部分的质量。在一个实施例中，水化生长和热生长技术相结合，并执行低温热氧化生长工艺(例如，减少了热预算)以提供高品质的隧道电介质层。
在本发明的一个方面，制造隧道电介质层中的热预算与常规方法相比得到减少。例如，图1示出了常规工艺的模型热预算，用于同根据本发明实施例的用于在太阳能电池中制造隧道电介质层的降低的热预算工艺进行对比。
参照图1，绘出了针对常规工艺102和根据本发明实施例的降低的热预算工艺104的模型热预算的曲线图100，其中以摄氏度为单位的温度作为按分钟表示的经过时间的函数。在一个实施例中，常规工艺102在隧道电介质层的制造中包含在接近或超过约900摄氏度加热超过一次。与此相反，在一个实施例中，降低的热预算工艺104在隧道电介质层的制造中在接近或超过约900摄氏度只加热一次，如图1中所描绘的。
太阳能电池可以制造为包括隧道电介质层。例如，图2示出了代表根据本发明的一个实施例制造具有隧道电介质层的太阳能电池的方法中的操作的流程图200。图3A-3C示出根据本发明的一个实施例的制造包括隧道电介质层的太阳能电池的方法中与流程图200的操作相对应不同阶段的剖视图。
参照图3A，提供了用于太阳能电池制造的衬底302。在根据本发明的一个实施例中，衬底302是由整块硅衬底构成。在一个实施例中，整块硅衬底上掺杂有N型掺杂物。在一个实施例中，衬底302具有如图3A所示的纹理表面。
参照流程图200中的操作202和相应的图3B，制造太阳能电池的方法包括将衬底302的表面暴露到湿化学溶液中，以在衬底302的表面上提供氧化物层304。根据本发明的一个实施例，所述湿化学溶液包括氧化剂，例如但不限于臭氧(O3)，或过氧化氢(H2O2)。在一个实施例中，在氧化物生长期间将湿化学溶液和衬底的表面暴露在可见光辐射中。在一个实施例中，衬底302是一个整块硅衬底，氧化物层304是氧化硅层。
参照流程图200中的操作204和相应的图3C，制造太阳能电池的方法还包括在干燥气氛中并在接近或超过900摄氏度的温度下加热氧化物层304，以将氧化物层304转换成太阳能电池的隧道电介质层306。在根据本发明的一个实施例中，在制造过程中仅将氧化物层304暴露到接近或超过900摄氏度的温度一次。在一个实施例中，在曝露操作202之后和在加热操作204之前，将氧化物层304从低于500摄氏度的温度加热到约565摄氏度的温度，然后冷却至低于500摄氏度的温度。
根据本发明的一个实施例，制造太阳能电池的方法还包括在加热操作204之前，在氧化物层304上方形成材料层308。在一个实施例中，材料层308是一种非晶硅层，该非晶硅层在加热操作204的过程中结晶成多晶硅层。在一个特定的实施例中，制造太阳能电池的方法进一步包括在多晶硅层308上方形成金属触点312，如图3C所示。
再次参照图3C，根据本发明的一个实施例，太阳能电池包括衬底302。隧道电介质层306被布置在衬底302中，该隧道电介质层是通过仅在接近或超过900摄氏度加热氧化物层(图3B的304)一次而形成的。在一个实施例中，所述太阳能电池还包括设置在隧道电介质层306上方的多晶硅层308。在一个特定的实施例中，太阳能电池进一步包括布置在多晶硅层308上方的金属触点312。在一个实施例中，衬底302是一个整块硅衬底，隧道电介质层304是氧化硅层。
在一个实施例中，所述太阳能电池是一种背接触太阳能电池。在该实施例中，背接触太阳电池包括衬底302中的P型和N型有源区。诸如触点312的导电触点被耦接到所述有源区，并且通过隔离区(如可以由介电材料构成的隔离区310)彼此分开。在一个实施例中，太阳能电池是一种背面接触太阳能电池，并且在光接收表面上设置了防反射涂层，如图3A-3C中的随机纹理化表面所示。在一个实施例中，该防反射涂层是厚度大约在70-80纳米范围内的氮化硅层。
在本发明的另一个方面，可以不使用水化处理制作包括隧道电介质层的太阳能电池。例如，图4示出根据本发明的一个实施例的代表具有隧道电介质层的太阳能电池的制造方法中的操作的流程图400。图3A-3C示出根据本发明的一个实施例的制造包括隧道电介质层的太阳能电池的方法中与流程图400的操作相对应的各个阶段的剖视图。
参照图3A，提供了用于太阳能电池制造的衬底302。在根据本发明的一个实施例中，衬底302是由整块硅衬底构成。在一个实施例中，整块硅衬底上掺杂有N型掺杂物。在一个实施例中，衬底302具有如图3A所示的纹理表面。
参照流程图400中的操作402和相应的图3B，制造太阳能电池的方法包括在低于600摄氏度的温度下通过热氧化在衬底302的表面上形成氧化物层304。根据本发明的一个实施例，氧化物层304是通过低压热氧化工艺形成的。在一个实施例中，在含氧(O2)气氛中在约500-580摄氏度的温度下执行所述低压热氧化工艺。在一个实施例中，衬底302是一个整块硅衬底，氧化物层304是氧化硅层。
参照流程图400中的操作404和相应的图3C，制造太阳能电池的方法还包括在干燥气氛中并在接近或超过900摄氏度的温度下加热氧化物层304，以将氧化物层304转换成太阳能电池的隧道电介质层306。在根据本发明的一个实施例中，在制造过程中仅将氧化物层304暴露到接近或超过900摄氏度的温度一次。在一个实施例中，在形成操作402之后和在加热操作404之前，将氧化物层304从低于500摄氏度的温度加热到约565摄氏度的温度，然后冷却至低于500摄氏度的温度。
根据本发明的一个实施例，制造太阳能电池的方法还包括在加热操作404之前，在氧化物层304上方形成材料层308。在一个实施例中，材料层308是一种非晶硅层，该非晶硅层在加热操作404期间结晶成多晶硅层。在一个特定的实施例中，制造太阳能电池的方法进一步包括在多晶硅层308上方形成金属触点312，如图3C所示。
如上所述，在本发明的一个方面，可通过对衬底进行水化工艺和热工艺的组合来制作隧道电介质层(例如，隧道氧化层)。图5A-5B分别示出了根据本发明的一个实施例在结合水化和热生长操作之后的隧道氧化物厚度和氧化物厚度的标准差的曲线图500A和500B。参照图500A和500B，水化生长时间、溶液区域浓度和温度存在变化。作为参考，所执行的热氧化在所有情况下均是相同的。图6A示出根据本发明的一个实施例的作为隧道电介质层的水化薄膜成分的厚度的函数的少数载流子寿命的曲线图600A。图6B示出根据本发明的一个实施例经过水化及热工艺组合的氧化物形成后的晶片的寿命的光致发光结果600B。从上述图表中示出的制作的薄膜类型的变化可以看出，根据本发明的一个实施例，可以通过调节生长工艺的水化处理部分来调节隧道电介质薄膜的具体期望属性。
如上文所述，在本发明的另一方面，可通过在制造期间仅将氧化物层暴露在大于约900摄氏度的温度一次来制造隧道电介质层(例如，隧道氧化层)。在一个实施例中，在与下一个制造工序中所希望的温度接近或基本上相同的温度下进行热氧化。该步骤可以在隧道氧化层上方形成硅层。因此，在一个实施例中，仅在约575摄氏度进行热氧化。
上文公开了具有隧道电介质层的太阳能电池的制造方法。根据本发明的实施例，制造太阳能电池的方法包括将太阳能电池的衬底表面暴露到湿化学溶液中，以在衬底的表面上提供氧化物层。该方法还包括在接近或超过900摄氏度的温度下在干燥气氛中加热氧化物层，将氧化物层转换成太阳能电池的隧道电介质层。在一个实施例中，在制造过程中仅将氧化物层暴露在接近或超过900摄氏度的温度一次。根据本发明的另一个实施例，制造太阳能电池的方法包括在低于600摄氏度的温度下，通过热氧化作用在太阳能电池的衬底表面上形成氧化物层。该方法还包括：在接近或超过900摄氏度的温度下在干燥气氛中加热氧化物层，以将氧化物层转换成太阳能电池的隧道电介质层。在一个实施例中，在制造过程中仅将氧化物层暴露在接近或超过900摄氏度的温度一次。

Claims (20)

1.一种制造太阳能电池的方法，所述方法包括：
将太阳能电池的衬底的表面暴露于湿化学溶液，以在所述衬底的表面上提供硅氧化物层；以及
在干燥气氛中以接近或超过900摄氏度的温度加热所述硅氧化物层，以将所述硅氧化物层转换成太阳能电池的隧道电介质层。
2.根据权利要求1所述的方法，其中在制造过程中仅将所述硅氧化物层暴露于接近或超过900摄氏度的温度一次。
3.根据权利要求1所述的方法，其中所述湿化学溶液包括从臭氧(O3)和过氧化氢(H2O2)构成的组中选择的氧化剂。
4.根据权利要求3所述的方法，其中在暴露过程中将所述湿化学溶液和所述衬底的表面暴露于可见光辐射。
5.根据权利要求1所述的方法，还包括：
在暴露步骤之后以及在加热步骤之前，将所述硅氧化物层从低于500摄氏度的温度加热到大约565摄氏度的温度，然后冷却至低于500摄氏度的温度。
6.根据权利要求1所述的方法，其中所述衬底为体硅衬底。
7.一种制造太阳能电池的方法，所述方法包括：
在低于600摄氏度的温度下，通过热氧化消耗太阳能电池的衬底的一部分来提供所述衬底的表面氧化物层；以及
在干燥气氛中以接近或超过900摄氏度的温度加热所述表面氧化物层，以将所述表面氧化物层转换成太阳能电池的隧道电介质层。
8.根据权利要求7所述的方法，其中在制造过程中仅将所述表面氧化物层暴露于接近或超过900摄氏度的温度一次。
9.根据权利要求7所述的方法，其中所述表面氧化物层是通过低压热氧化工艺形成的。
10.根据权利要求9所述的方法，其中在含氧(O2)气氛中大约在500-580摄氏度范围内的温度下执行低压热氧化工艺。
11.根据权利要求7所述的方法，其中所述衬底包括硅，并且所述氧化物层包括氧化硅。
12.根据权利要求7所述的方法，其中所述衬底为体硅衬底。
13.根据权利要求7所述的方法，还包括：
在形成步骤之后以及在加热步骤之前，将所述表面氧化物层从低于500摄氏度的温度加热到大约565摄氏度的温度，然后冷却至低于500摄氏度的温度。
14.一种制造太阳能电池的方法，所述方法包括：
在第一温度下通过热氧化来形成布置在衬底上的表面氧化物层；以及
将所述表面氧化物层从低于500摄氏度的温度加热到高于500摄氏度的第二温度，其中所述第一温度和所述第二温度大致相同。
15.根据权利要求14所述的方法，其中所述第一温度和所述第二温度大约为565摄氏度。
16.根据权利要求14所述的方法，其中所述表面氧化物层是通过低压热氧化工艺形成的。
17.根据权利要求14所述的方法，其中在含氧(O2)气氛中执行低压热氧化工艺。
18.根据权利要求14所述的方法，其中所述衬底包括硅，并且所述氧化物层包括氧化硅。
19.根据权利要求14所述的方法，还包括：在加热过程中形成多晶硅层。
20.根据权利要求19所述的方法，还包括：在所述多晶硅层上形成金属触点。
CN201610834756.5A 2010-07-02 2011-04-27 用于制造具有隧道电介质层的太阳能电池的方法 Pending CN106847937A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/829,922 US8334161B2 (en) 2010-07-02 2010-07-02 Method of fabricating a solar cell with a tunnel dielectric layer
US12/829,922 2010-07-02
CN201180032583.0A CN102959731B (zh) 2010-07-02 2011-04-27 用于制造具有隧道电介质层的太阳能电池的方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201180032583.0A Division CN102959731B (zh) 2010-07-02 2011-04-27 用于制造具有隧道电介质层的太阳能电池的方法

Publications (1)

Publication Number Publication Date
CN106847937A true CN106847937A (zh) 2017-06-13

Family

ID=45398770

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201180032583.0A Active CN102959731B (zh) 2010-07-02 2011-04-27 用于制造具有隧道电介质层的太阳能电池的方法
CN201610834756.5A Pending CN106847937A (zh) 2010-07-02 2011-04-27 用于制造具有隧道电介质层的太阳能电池的方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201180032583.0A Active CN102959731B (zh) 2010-07-02 2011-04-27 用于制造具有隧道电介质层的太阳能电池的方法

Country Status (7)

Country Link
US (4) US8334161B2 (zh)
EP (1) EP2589087A4 (zh)
JP (4) JP5825692B2 (zh)
KR (3) KR102007102B1 (zh)
CN (2) CN102959731B (zh)
AU (1) AU2011271682B2 (zh)
WO (1) WO2012003038A2 (zh)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8334161B2 (en) 2010-07-02 2012-12-18 Sunpower Corporation Method of fabricating a solar cell with a tunnel dielectric layer
EP2787541B1 (en) 2013-04-03 2022-08-31 LG Electronics, Inc. Solar cell
KR102132740B1 (ko) * 2013-10-21 2020-07-10 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101661948B1 (ko) 2014-04-08 2016-10-04 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101613846B1 (ko) 2014-06-10 2016-04-20 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR102219804B1 (ko) 2014-11-04 2021-02-24 엘지전자 주식회사 태양 전지 및 그의 제조 방법
EP3026713B1 (en) 2014-11-28 2019-03-27 LG Electronics Inc. Solar cell and method for manufacturing the same
KR102272433B1 (ko) 2015-06-30 2021-07-05 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN106784069A (zh) * 2015-11-20 2017-05-31 上海神舟新能源发展有限公司 背表面隧道氧化钝化交指式背结背接触电池制作方法
CN107026218B (zh) * 2016-01-29 2019-05-10 Lg电子株式会社 制造太阳能电池的方法
US10367115B2 (en) 2016-01-29 2019-07-30 Lg Electronics Inc. Method of manufacturing solar cell
NL2017290B1 (en) 2016-08-04 2018-02-14 Stichting Energieonderzoek Centrum Nederland Passivated Emitter and Rear Contact Solar Cell
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
DE102016222175A1 (de) 2016-11-11 2018-05-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Aufbringen von Ladungsträger-selektiven Kontakten auf Solarzellen
KR101846443B1 (ko) * 2017-02-23 2018-04-06 엘지전자 주식회사 태양전지를 위한 산화막 형성 방법
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
CN107546281A (zh) * 2017-08-29 2018-01-05 浙江晶科能源有限公司 一种实现p型perc电池正面钝化接触的方法
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
FR3071358B1 (fr) * 2017-09-15 2019-09-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'une cellule photovoltaique a homojonction
CN116387371B (zh) * 2023-06-02 2023-09-29 天合光能股份有限公司 太阳能电池及其制作方法、光伏组件及光伏系统

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04226084A (ja) * 1990-05-23 1992-08-14 Mitsubishi Electric Corp 太陽電池およびその製造方法
JPH06314661A (ja) * 1993-03-02 1994-11-08 Nec Corp 半導体薄膜の形成方法
CN1127805A (zh) * 1994-08-26 1996-07-31 Memc电子材料有限公司 热处理前的清洗方法
US5810923A (en) * 1994-08-17 1998-09-22 Tdk Corporation Method for forming oxide thin film and the treatment of silicon substrate
CN1252893A (zh) * 1997-12-26 2000-05-10 精工爱普生株式会社 氧化硅膜的制造方法、半导体装置的制造方法、半导体装置、显示装置和红外光照射装置
JP2002064093A (ja) * 2000-08-21 2002-02-28 Japan Science & Technology Corp 半導体基板表面の酸化膜形成方法および半導体装置の製造方法
CN1417846A (zh) * 2001-11-07 2003-05-14 旺宏电子股份有限公司 隧道氧化层的制造方法
JP2004047935A (ja) * 2002-05-24 2004-02-12 Japan Science & Technology Corp シリコン基材表面の二酸化シリコン膜形成方法、半導体基材表面の酸化膜形成方法、及び半導体装置の製造方法
JP2005347339A (ja) * 2004-05-31 2005-12-15 Shin Etsu Handotai Co Ltd 太陽電池の製造方法及び太陽電池
US20070151599A1 (en) * 2005-12-30 2007-07-05 Sunpower Corporation Solar cell having polymer heterojunction contacts
CN101233621A (zh) * 2005-07-29 2008-07-30 Otb集团有限公司 用于钝化衬底表面的方法
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
CN101548395A (zh) * 2006-09-25 2009-09-30 Ecn荷兰能源中心 具有改进的表面钝化的晶体硅太阳能电池的制造方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393095A (en) * 1982-02-01 1983-07-12 Ppg Industries, Inc. Chemical vapor deposition of vanadium oxide coatings
JP2811723B2 (ja) * 1989-03-20 1998-10-15 株式会社デンソー 半導体装置の製造方法
US5057439A (en) * 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
US5057463A (en) 1990-02-28 1991-10-15 Sgs-Thomson Microelectronics, Inc. Thin oxide structure and method
JP2858920B2 (ja) * 1990-06-22 1999-02-17 三洋電機株式会社 光起電力素子の製造方法
JP2855903B2 (ja) * 1990-08-30 1999-02-10 日本電気株式会社 半導体装置の製造方法
JPH0529293A (ja) * 1991-07-18 1993-02-05 Fujitsu Ltd 半導体基板の前処理方法
JPH0794431A (ja) * 1993-04-23 1995-04-07 Canon Inc アモルファス半導体用基板、該基板を有するアモルファス半導体基板、及び該アモルファス半導体基板の製造方法
JP3094730B2 (ja) * 1993-04-27 2000-10-03 トヨタ自動車株式会社 太陽電池素子
JPH0786271A (ja) 1993-09-17 1995-03-31 Fujitsu Ltd シリコン酸化膜の作製方法
JP3096640B2 (ja) * 1995-08-04 2000-10-10 三洋電機株式会社 半導体装置及び表示装置
JPH11340483A (ja) * 1998-05-26 1999-12-10 Hiroshi Komiyama 太陽電池用薄膜の製造方法
WO2001026161A1 (fr) * 1999-10-05 2001-04-12 Matsushita Battery Industrial Co., Ltd. Pile solaire a compose semiconducteur et procede de fabrication
CN1144272C (zh) * 2000-09-04 2004-03-31 中国科学院半导体研究所 采用teos源pecvd生长氧化硅厚膜的方法
JP2003152205A (ja) * 2001-11-12 2003-05-23 Sharp Corp 光電変換素子及びその製造方法
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
JP2004056057A (ja) * 2002-07-24 2004-02-19 Sharp Corp 太陽電池の製造方法
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
US7323423B2 (en) * 2004-06-30 2008-01-29 Intel Corporation Forming high-k dielectric layers on smooth substrates
DE102004050269A1 (de) 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
JP4586585B2 (ja) * 2005-03-15 2010-11-24 日立電線株式会社 薄膜半導体装置の製造方法
CN101060166A (zh) * 2006-04-20 2007-10-24 北京大学 一种透光电极及其制备方法
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US7705237B2 (en) 2006-11-27 2010-04-27 Sunpower Corporation Solar cell having silicon nano-particle emitter
US8222516B2 (en) * 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
US7799670B2 (en) * 2008-03-31 2010-09-21 Cypress Semiconductor Corporation Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devices
KR20100136542A (ko) 2008-04-09 2010-12-28 어플라이드 머티어리얼스, 인코포레이티드 폴리실리콘 에미터 태양전지용의 단순화된 후면 접촉부
CN101999176A (zh) * 2008-04-09 2011-03-30 应用材料股份有限公司 太阳能电池的氮化势垒层
DE102008055515A1 (de) * 2008-12-12 2010-07-15 Schott Solar Ag Verfahren zum Ausbilden eines Dotierstoffprofils
US8334161B2 (en) * 2010-07-02 2012-12-18 Sunpower Corporation Method of fabricating a solar cell with a tunnel dielectric layer
JP2012049156A (ja) * 2010-08-24 2012-03-08 Osaka Univ 太陽電池およびその製造方法

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04226084A (ja) * 1990-05-23 1992-08-14 Mitsubishi Electric Corp 太陽電池およびその製造方法
JPH06314661A (ja) * 1993-03-02 1994-11-08 Nec Corp 半導体薄膜の形成方法
US5810923A (en) * 1994-08-17 1998-09-22 Tdk Corporation Method for forming oxide thin film and the treatment of silicon substrate
CN1127805A (zh) * 1994-08-26 1996-07-31 Memc电子材料有限公司 热处理前的清洗方法
CN1252893A (zh) * 1997-12-26 2000-05-10 精工爱普生株式会社 氧化硅膜的制造方法、半导体装置的制造方法、半导体装置、显示装置和红外光照射装置
JP2002064093A (ja) * 2000-08-21 2002-02-28 Japan Science & Technology Corp 半導体基板表面の酸化膜形成方法および半導体装置の製造方法
CN1417846A (zh) * 2001-11-07 2003-05-14 旺宏电子股份有限公司 隧道氧化层的制造方法
JP2004047935A (ja) * 2002-05-24 2004-02-12 Japan Science & Technology Corp シリコン基材表面の二酸化シリコン膜形成方法、半導体基材表面の酸化膜形成方法、及び半導体装置の製造方法
JP2005347339A (ja) * 2004-05-31 2005-12-15 Shin Etsu Handotai Co Ltd 太陽電池の製造方法及び太陽電池
CN101233621A (zh) * 2005-07-29 2008-07-30 Otb集团有限公司 用于钝化衬底表面的方法
JP2009503845A (ja) * 2005-07-29 2009-01-29 オーテーベー、グループ、ベスローテン、フェンノートシャップ 基材表面を不動態化する方法
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US7633006B1 (en) * 2005-08-11 2009-12-15 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US20070151599A1 (en) * 2005-12-30 2007-07-05 Sunpower Corporation Solar cell having polymer heterojunction contacts
CN101548395A (zh) * 2006-09-25 2009-09-30 Ecn荷兰能源中心 具有改进的表面钝化的晶体硅太阳能电池的制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
复旦大学微电子教研组: "《集成电路设计原理 模拟集成电路》", 31 July 1983 *

Also Published As

Publication number Publication date
CN102959731B (zh) 2016-10-19
JP6082060B2 (ja) 2017-02-15
US8709851B2 (en) 2014-04-29
WO2012003038A3 (en) 2012-04-12
AU2011271682A1 (en) 2013-01-17
US9537030B2 (en) 2017-01-03
EP2589087A4 (en) 2017-07-26
JP5825692B2 (ja) 2015-12-02
US9112066B2 (en) 2015-08-18
US20120000528A1 (en) 2012-01-05
KR101758952B1 (ko) 2017-07-17
JP2013529857A (ja) 2013-07-22
AU2011271682B2 (en) 2015-08-13
EP2589087A2 (en) 2013-05-08
KR20180014831A (ko) 2018-02-09
KR102100065B1 (ko) 2020-04-10
WO2012003038A2 (en) 2012-01-05
KR20170040366A (ko) 2017-04-12
US20150263200A1 (en) 2015-09-17
CN102959731A (zh) 2013-03-06
US20140134788A1 (en) 2014-05-15
KR20130098191A (ko) 2013-09-04
JP2019091919A (ja) 2019-06-13
JP6519820B2 (ja) 2019-05-29
KR102007102B1 (ko) 2019-08-02
JP2016001739A (ja) 2016-01-07
JP2017069588A (ja) 2017-04-06
US8334161B2 (en) 2012-12-18
US20130078758A1 (en) 2013-03-28

Similar Documents

Publication Publication Date Title
CN102959731B (zh) 用于制造具有隧道电介质层的太阳能电池的方法
CN102959738B (zh) 制造太阳能电池的发射极区域的方法
CN105453275B (zh) 使用硅纳米粒子制造太阳能电池的发射极区域
JP6352939B2 (ja) 酸窒化シリコン誘電層を備える太陽電池のエミッタ領域
CN110061096B (zh) 制造太阳能电池的方法
JP2010527163A (ja) 多孔性構造の太陽電池とその製造方法
CN108695147A (zh) Soi键合硅片的制备方法
TW201533921A (zh) 具有磊晶射極之矽太陽能電池
JP2007019259A (ja) 太陽電池およびその製造方法
CN106133916B (zh) 太阳能电池光接收表面的钝化
KR20090132541A (ko) 기판형 태양전지의 제조방법
JP7149708B2 (ja) 太陽電池の製造方法
CN118007062A (zh) 一种通过磷掺杂调控非晶硅薄膜折射率及电导率的方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20170613

WD01 Invention patent application deemed withdrawn after publication