JP7149708B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 57
- 239000000758 substrate Substances 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 51
- 239000012298 atmosphere Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
- 230000001590 oxidative effect Effects 0.000 claims description 22
- 239000007800 oxidant agent Substances 0.000 claims description 21
- 238000009279 wet oxidation reaction Methods 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 17
- 230000002209 hydrophobic effect Effects 0.000 claims description 10
- 238000011065 in-situ storage Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 131
- 239000007789 gas Substances 0.000 description 29
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical group [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 18
- 238000002474 experimental method Methods 0.000 description 17
- 238000002161 passivation Methods 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000007598 dipping method Methods 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000002585 base Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000012544 monitoring process Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000003637 basic solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 230000000694 effects Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000013441 quality evaluation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 238000004904 shortening Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Description
〔関連出願〕
本願は、韓国特許出願第10-2017-0024418号に基づくパリ優先権主張ともなったものであり、本明細書の内容もまた、当該韓国出願の明細書及び図面によるものである。
〔1〕 太陽電池用酸化膜の製造方法であって、
シリコン基板を湿式酸化雰囲気に露出させる露出段階と、
前記湿式酸化雰囲気における酸化剤濃度を工程時間の間維持し、前記シリコン基板にシリコン酸化膜(SiO2)を形成する酸化膜形成段階とを含んでなる、太陽電池用酸化膜の製造方法。
〔2〕 前記シリコン酸化膜形成段階が、常温で実施される、〔1〕に記載の太陽電池用酸化膜の製造方法。
〔3〕 前記湿式酸化雰囲気における気圧が、1.1気圧~1.3気圧である、〔1〕又は〔2〕に記載の太陽電池用酸化膜の製造方法。
〔4〕 前記酸化剤の濃度が、3ppm~100ppmである、〔1〕~〔3〕の何れか一項に記載の太陽電池用酸化膜の製造方法。
〔5〕 前記シリコン基板が、前記湿式酸化雰囲気に30秒~600秒間露出される、〔1〕~〔4〕の何れか一項に記載の太陽電池用酸化膜の製造方法。
〔6〕 前記酸化剤が、O2、H2O、及びO3からなる群から選択される一又は二以上の混合物である、〔1〕~〔5〕の何れか一項に記載の太陽電池用酸化膜の製造方法。
〔7〕 前記湿式酸化雰囲気が、純度が99.9%以下であるO2ガスを単独で加圧噴射して形成されたものである、〔1〕~〔6〕の何れか一項に記載の太陽電池用酸化膜の製造方法。
〔8〕 前記湿式酸化雰囲気が、純度が99.9%以上であるO2ガスにN2ガスを混合した混合ガスを加圧噴射して形成されたものである、〔1〕~〔7〕の何れか一項に記載の太陽電池用酸化膜の製造方法。
〔9〕 前記露出段階の前に、前記シリコン基板を疎水性処理する疎水性処理段階をさらに含んでなる、〔1〕~〔8〕の何れか一項に記載の太陽電池の製造方法。
〔10〕 前記疎水性処理段階の前に、前記基板のソーダメージをエッチング(Saw Damage Etching)するSDE段階をさらに含んでなる、〔9〕に記載の太陽電池用酸化膜の製造方法。
〔11〕 前記疎水性処理段階と、前記SDE段階が、イン・サイチュ(in-situ)で行われる、〔10〕に記載の太陽電池用酸化膜の製造方法。
〔12〕 前記酸化膜形成段階は、前記SDE段階とイン・サイチュ(in-situ)で行われる、〔10〕又は〔11〕に記載の太陽電池用酸化膜の製造方法。
〔13〕 前記シリコン酸化膜を600℃に加熱する加熱段階をさらに含んでなる、〔1〕~〔12〕の何れか一項に記載の太陽電池用酸化膜の製造方法。
〔14〕 前記シリコン酸化膜の厚さが、0.5nm~2nmである、〔1〕~〔13〕の何れか一項に記載の太陽電池用酸化膜の製造方法。
〔15〕 前記酸化膜形成段階の後に、前記基板を60℃以下の温度でホットエアー(hot air)で乾燥させる乾燥段階をさらに含んでなる、〔1〕~〔14〕の何れか一項に記載の太陽電池用酸化膜の製造方法。
前記シリコン酸化膜形成段階は、常温で実施され、前記湿式酸化雰囲気の気圧は、1.1~1.3気圧(atm;1013.25hPa)で有り得る。
〔数式(1)〕
Claims (12)
- 太陽電池用酸化膜の製造方法であって、
シリコン基板を、水蒸気を含む湿式酸化雰囲気に露出させる露出段階と、
前記湿式酸化雰囲気における酸化剤濃度を工程時間の間維持し、前記シリコン基板にシリコン酸化膜(SiO2)を形成する酸化膜形成段階と、を含んでなり、
前記露出段階の前に、前記シリコン基板を疎水性処理する疎水性処理段階を更に含み、
前記疎水性処理段階の前に、前記基板のソーダメージをエッチング(Saw Damage Etching)するSDE段階を更に含み、
前記酸化膜形成段階は、前記SDE段階とイン・サイチュ(in-situ)で行われる、太陽電池用酸化膜の製造方法。 - 前記シリコン酸化膜形成段階が常温で実施される、請求項1に記載の太陽電池用酸化膜の製造方法。
- 前記湿式酸化雰囲気における気圧が1.1気圧~1.3気圧である、請求項1又は2に記載の太陽電池用酸化膜の製造方法。
- 前記酸化剤の濃度が3ppm~100ppmである、請求項1~3の何れか一項に記載の太陽電池用酸化膜の製造方法。
- 前記シリコン基板が前記湿式酸化雰囲気に30秒~600秒間露出される、請求項1~4の何れか一項に記載の太陽電池用酸化膜の製造方法。
- 前記酸化剤がO2、H2O、及びO3からなる群から選択される一又は二以上の混合物である、請求項1~5の何れか一項に記載の太陽電池用酸化膜の製造方法。
- 前記湿式酸化雰囲気が、純度が99.9%以下であるO2ガスを単独で加圧噴射して形成されたものである、請求項1~6の何れか一項に記載の太陽電池用酸化膜の製造方法。
- 前記湿式酸化雰囲気が、純度が99.9%以上であるO2ガスにN2ガスを混合した混合ガスを加圧噴射して形成されたものである、請求項1~7の何れか一項に記載の太陽電池用酸化膜の製造方法。
- 前記疎水性処理段階と、前記SDE段階が、イン・サイチュ(in-situ)で行われる、請求項1に記載の太陽電池用酸化膜の製造方法。
- 前記シリコン酸化膜を600℃に加熱する加熱段階を更に含んでなる、請求項1~9の何れか一項に記載の太陽電池用酸化膜の製造方法。
- 前記シリコン酸化膜の厚さが、0.5nm~2nmである、請求項1~10の何れか一項に記載の太陽電池用酸化膜の製造方法。
- 前記酸化膜形成段階の後に、前記基板を60℃以下の温度で、ホットエアー(hot air)で乾燥させる乾燥段階を更に含んでなる、請求項1~11の何れか一項に記載の太陽電池用酸化膜の製造方法。
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