CN102959738B - 制造太阳能电池的发射极区域的方法 - Google Patents

制造太阳能电池的发射极区域的方法 Download PDF

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CN102959738B
CN102959738B CN201180032856.1A CN201180032856A CN102959738B CN 102959738 B CN102959738 B CN 102959738B CN 201180032856 A CN201180032856 A CN 201180032856A CN 102959738 B CN102959738 B CN 102959738B
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CN102959738A (zh
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大卫·史密斯
刘海宁
蒂姆·丹尼斯
简·曼宁
阮信晓
安·瓦尔德豪尔
吉娜维芙·A·所罗门
布伦达·帕古拉彦·马尔加普
约瑟夫·拉米雷
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Maikesheng Solar Energy Co ltd
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Abstract

本发明描述了制造太阳能电池的发射极区域的方法。还描述了在太阳能电池的衬底上形成层的方法以及所得的太阳能电池。

Description

制造太阳能电池的发射极区域的方法
本文描述的发明得到美国政府支持，在美国能源部授予的编号DE-FC36-07GO17043的合同下完成。美国政府可拥有本发明的某些权利。
技术领域
本发明的实施例涉及可再生能源领域，具体而言，涉及制造太阳能电池的发射极区域的方法。
背景技术
光伏电池（常被称为太阳能电池）是熟知的用于直接转化太阳辐射为电能的器件。一般来讲，使用半导体加工技术在衬底的表面附近形成p-n结而将太阳能电池制造在半导体晶片或衬底上。入射到衬底表面上的太阳辐射在衬底的体块中产生电子空穴对，这些电子空穴对迁移到衬底中的p-掺杂和n-掺杂区域，从而在所述掺杂区域之间产生电压差。所述掺杂区域与太阳能电池上的金属触点相连以将电流从电池导向与其连接的外部电路。
效率是太阳能电池的重要特性，因为其直接关系到太阳能电池的发电能力。因此，提高太阳能电池效率的技术通常是可取的。通过提供用于制造太阳能电池结构的新方法，本发明的实施例可供提高太阳能电池效率之用。
附图说明
图1根据本发明的一个实施例示出了流程图，该流程图表示在制造太阳能电池的发射极区域的方法中的操作。
图2A根据本发明的一个实施例示出了剖视图，该剖视图表示在包括发射极区域的太阳能电池的制造阶段。
图2B根据本发明的一个实施例示出了剖视图，该剖视图表示对应于图1的流程图的操作102的包括发射极区域的太阳能电池的制造阶段。
图2C根据本发明的一个实施例示出了剖视图，该剖视图表示对应于图1的流程图的操作104的包括发射极区域的太阳能电池的制造阶段。
图2D根据本发明的一个实施例示出了剖视图，该剖视图表示对应于图1的流程图的操作106的包括发射极区域的太阳能电池的制造阶段。
图2E根据本发明的一个实施例示出了剖视图，该剖视图表示对应于图1的流程图的操作108的包括发射极区域的太阳能电池的制造阶段。
图3根据本发明的一个实施例示出了流程图，该流程图表示在太阳能电池的衬底上形成多个层的方法中的操作。
图4A根据本发明的一个实施例示出了剖视图，该剖视图表示对应于图3的流程图的操作302的太阳能电池制造阶段。
图4B根据本发明的一个实施例示出了图4A的一部分的放大视图。
图4C根据本发明的一个实施例示出了剖视图，该剖视图表示对应于图3的流程图的操作304和306的太阳能电池制造阶段。
图5根据本发明的一个实施例示出了太阳能电池的衬底的剖视图和俯视图，所述衬底具有形成于其上的层。
具体实施方式
本文描述了制造太阳能电池的发射极区域的方法。在下面的描述中，给出了许多具体细节，例如具体的工艺流程操作，以形成对本发明的实施例的透彻理解。对本领域的技术人员将显而易见的是在没有这些具体细节的情况下可实施本发明的实施例。在其他情况下，没有详细描述熟知的制造技术，例如光刻和蚀刻技术，以避免不必要地使本发明的实施例变得模糊。此外，应当理解在图中示出的多种实施例是示例性的实例并且未必按比例绘制。
本文公开了制造太阳能电池的发射极区域的方法。在一个实施例中，制造太阳能电池的发射极区域的方法包括在炉内于衬底表面上形成隧道氧化层。在不从炉中取出衬底的情况下在隧道氧化层上形成非晶态层。对非晶态层掺杂以形成具有N-型掺杂剂的第一区域和具有P-型掺杂剂的第二区域。随后，加热非晶态层以形成具有N-型掺杂区域和P-型掺杂区域的多晶层。在一个实施例中，在太阳能电池的衬底上形成多个层的方法包括将带有多个晶片的晶片载体装入炉内，所述晶片载体具有一个或多个装载两个背对背设置的晶片的晶片接纳槽。在炉中，在所述多个晶片中的每一个的所有表面上形成隧道氧化层。在不从炉中取出衬底的情况下在隧道氧化层上形成非晶态层，所述非晶态层形成在隧道氧化层的除背对背设置的晶片间接触部分之外的所有部分上。
本文还公开了太阳能电池。在此类实施例中，太阳能电池包含衬底或晶片。在一个实施例中，在硅晶片的所有表面上设置包含二氧化硅的隧道氧化层。在隧道氧化层上设置多晶层，所述多晶层设置在隧道氧化层的除硅晶片的背侧之外的所有部分上，所述背侧具有多晶层的环形图案。在一个实施例中，在硅晶片的所有表面上设置包含二氧化硅的隧道氧化层。在隧道氧化层上设置非晶态层，所述非晶态层设置在隧道氧化层的除硅晶片的背侧之外的所有部分上，所述背侧具有非晶态层的环形图案。
根据本发明的一个实施例，为制造太阳能电池的钝化发射极，使用薄隧道氧化物以及重掺杂的n-型和p-型多晶硅。虽然这样的膜可按传统方式单独地在炉中形成，但尚未组合起来制造太阳能电池，且这样做的制造成本对于太阳能电池市场可能太过高昂。反倒在一个实施例中，将氧化和后续的硅沉积组合在单个工艺操作中。在一个实施例中，通过在炉舟中每个槽装两个晶片，此方法也可用来使生产量加倍。在一个实施例中，先将硅沉积为未掺杂的非晶态层。在此实施例中，在后来的加工操作中掺杂并晶化硅以形成多晶硅层。在一个可供选择的实施例中，在单个工艺操作中将硅层形成为多晶硅层。
本发明的实施例可解决传统的制造问题，例如（但不限于）：（1）氧化物厚度的控制和氧化物质量，（2）氧化和多晶硅沉积之间的污染，（3）过度的预防性维护需要，（4）生产量，或（5）n-多晶硅和p-多晶硅薄层电阻的控制。根据本发明的一个实施例，组合太阳能电池制造方法的若干特征，也就是将氧化和多晶硅（先作为非晶硅）沉积组合到单个工序中。在一个实施例中，在炉中使用碳化硅（SiC）部件以延长维修间隔期。在一个实施例中，每个槽装两个晶片以增加生产量。上面的实施例都可对制造太阳能电池的可行性有贡献。
在一个实施例中，沉积的硅为非晶态层并在后来的操作中掺杂和晶化该层，这使得过程更可控并改善钝化。在一个实施例中，通过在炉传送舟中每个槽装两个晶片来改善生产量。在一个实施例中，使用SiC舟以获得尺寸稳定性。在一个实施例中，薄层电阻的控制通过沉积未掺杂的非晶态硅而不是原位掺杂的多晶硅来实现。然后在后来的更高温度的操作中选择性地形成n区和p区并加以晶化。在一个实施例中，通过遵循本文所述的一种或多种方法，晶粒尺寸可最大化，薄层电阻可最小化，且补偿掺杂可避免。
应当理解，用于膜制造的炉不限于常规炉。在一个实施例中，所述炉为用于晶片加工的炉膛，例如（但不限于）立式炉膛、卧式炉膛或等离子体炉膛。还应当理解，本文提及的非晶态膜或层不限于非晶态硅膜或层。在一个实施例中，非晶态膜或层为例如（但不限于）非晶态硅-锗膜或层或者非晶态碳掺杂硅膜或层之类的膜或层。
太阳能电池可被制造成包括发射极区域。例如，图1根据本发明的一个实施例示出了流程图100，该流程图表示在制造太阳能电池的发射极区域的方法中的操作。图2A-2E根据本发明的一个实施例示出了剖视图，这些剖视图表示对应于流程图100的操作的太阳能电池（包括发射极区域）各个制造阶段。
参见图2A，该图示出了用于太阳能电池制造的衬底202。根据本发明的一个实施例，衬底202由体硅衬底构成。在一个实施例中，所述体硅衬底掺杂有N-型掺杂剂。在一个实施例中，衬底202具有纹理化表面，但未在图2A中示出。
参见流程图100的操作102和对应的图2B，制造太阳能电池的发射极区域的方法包括在炉内在衬底202表面上形成隧道氧化层204。根据本发明的一个实施例，形成隧道氧化层204包括在炉中于大约900摄氏度的温度下加热衬底202。在一个特定实施例中，在炉中于大约900摄氏度的温度下加热衬底202还包括在大约500毫托的压力下在氧气氛中加热大约3分钟以形成厚度为大约1.5纳米的隧道氧化层204。根据本发明的另一个实施例，形成隧道氧化层204包括在炉中在低于600摄氏度的温度下加热衬底202。在一个特定实施例中，在炉中在低于600摄氏度的温度下加热衬底202还包括在大约565摄氏度的温度、大约300托的压力下在氧气氛中加热大约60分钟以形成厚度约1.5纳米的隧道氧化层204。在一个可供选择的实施例中，所述气氛包括N2O。
参见流程图100的操作104和对应的图2C，制造太阳能电池的发射极区域的方法还包括在不从炉中取出衬底202的情况下在隧道氧化层204上形成非晶态层206。根据本发明的一个实施例，形成非晶态层206包括在炉中在低于575摄氏度的温度下沉积非晶态层206。在一个特定实施例中，在炉中在低于575摄氏度的温度下沉积非晶态层206还包括在大约565摄氏度的温度、大约350毫托的压力下在硅烷（SiH4）气氛中加热以形成厚度大约在200-300纳米范围内的非晶态层206。
参见流程图100的操作106和对应的图2D，制造太阳能电池的发射极区域的方法还包括用掺杂剂208掺杂非晶态层206以形成掺杂的非晶态层210，掺杂的非晶态层210具有包含N-型掺杂剂的第一区域（p-n结212的左侧）和包含P-型掺杂剂的第二区域（p-n结212的右侧）。在一个实施例中，掺杂剂自固态源引入。在另一个实施例中，掺杂剂作为注入的原子或离子引入。
参见流程图100的操作108和对应的图2E，制造太阳能电池的发射极区域的方法还包括随后加热掺杂的非晶态层210以形成具有N-型掺杂区域218和P-型掺杂区域216的多晶层214。根据本发明的一个实施例，衬底202由硅构成，隧道氧化层204由二氧化硅构成，非晶态层206由硅构成，N-型掺杂剂为磷掺杂剂，P-型掺杂剂为硼掺杂剂。在一个实施例中，隧道氧化层204和非晶态层206二者均在大约565摄氏度的温度下形成，且加热掺杂的非晶态层210以形成多晶层214包括在大约980摄氏度的温度下加热。
为进一步制造太阳能电池或完成太阳能电池的制造，上述方法可还包括在多晶层214上方形成金属触点。在一个实施例中，完成的太阳能电池为背接触太阳能电池。在此实施例中，N-型掺杂区域218和P-型掺杂区域216是活性区域。可将导电触点连接到所述活性区域并由隔离区域分开，隔离区域可由介电材料构成。在一个实施例中，太阳能电池为背接触太阳能电池并且还包括设置在光接收表面上（例如太阳能电池的随机纹理化表面上）的抗反射涂层。
本发明的另一方面，提供了在太阳能电池衬底上形成多个层的独特方法。例如，图3根据本发明的一个实施例示出了流程图300，该流程图表示在在太阳能电池的衬底上形成多个层的方法中的操作。图4A-4C根据本发明的一个实施例示出了剖视图，这些剖视图表示对应于流程图300的操作的太阳能电池的各个制造阶段。
参见流程图300的操作302及相应的图4A和4B，在太阳能电池的衬底上形成多个层的方法包括向炉内装入载有多个晶片404的晶片载体402，所述晶片载体402具有一个或多个装载两个背对背设置的晶片（例如晶片406和408）的晶片接纳槽。根据本发明的一个实施例，向载体402的25个槽中装入50个晶片。
参见流程图300的操作304和相应的图4C，在太阳能电池的衬底上形成多个层的方法还包括在炉中在所述多个晶片404中的每一个的所有表面上（例如如图4C中所示晶片406和408的所有表面上）形成隧道氧化层410。根据本发明的一个实施例，形成隧道氧化层410包括在炉中于大约900摄氏度的温度下加热所述多个晶片404中的每一个。在一个特定实施例中，在炉中于大约900摄氏度的温度下加热所述多个晶片404中的每一个还包括在大约500毫托的压力下在氧气氛中加热大约3分钟以形成厚度为大约1.5纳米的隧道氧化层410。根据本发明的另一个实施例，形成隧道氧化层410包括在炉中在低于600摄氏度的温度下加热所述多个晶片404中的每一个。在一个特定实施例中，在炉中在低于600摄氏度的温度下加热所述多个晶片404中的每一个还包括在大约565摄氏度的温度、大约300托的压力下在氧气氛中加热大约60分钟以形成厚度为大约1.5纳米的隧道氧化层410。在一个可供选择的实施例中，所述气氛包括N2O。
参见流程图300的操作304和对应的图4C，在太阳能电池的衬底上形成多个层的方法还包括在不从炉中取出所述多个晶片404的情况下在隧道氧化层410上形成非晶态层412，非晶态层412形成在隧道氧化层410除背对背设置的晶片间接触部分之外的所有部分上，例如参见图4C中晶片406和408。根据本发明的一个实施例，对于背对背设置的晶片，各个晶片的背部上形成有非晶态层的环形图案，这将在下面参照图5更详细地描述。在一个实施例中，所述多个晶片404中的每一个均由硅构成，隧道氧化层410由二氧化硅构成，非晶态层412由硅构成。在一个实施例中，形成非晶态层412包括在炉中在低于575摄氏度的温度下沉积非晶态层412。在一个特定实施例中，在炉中在低于575摄氏度的温度下沉积非晶态层412还包括在大约565摄氏度的温度、大约350毫托的压力下在硅烷（SiH4）气氛中加热以形成厚度大约在200-300纳米范围内的非晶态层412。在一个实施例中，温度被保持低于575摄氏度以避免所形成的层结晶，但为了保持适于大规模制造的沉积速率，不显著低于575摄氏度。
根据本发明的一个实施例，在太阳能电池的衬底上形成多个层的方法还包括在形成非晶态层412之后向每个晶片的背部施加清洁溶液，所述清洁溶液包含氧化剂。然后向每个晶片的背部施加纹理化溶液，所述纹理化溶液包含氢氧化物。在一个实施例中，氧化剂为例如（但不限于）臭氧或过氧化氢（H2O2）的物质，氢氧化物为例如（但不限于）氢氧化钾（KOH）或氢氧化钠（NaOH）等物质。
纹理化溶液可在制造的太阳能电池的光接收部分上形成随机纹理化（rantex）表面。根据本发明的一个实施例，通过在引入纹理化溶液之前引入具有氧化剂的清洁溶液，太阳能电池的纹理化成为均匀的，尽管最初有在太阳能电池衬底上制备的层的环形部分，如下面参照图5所述。
环形特征，如参照图4C所提及，可保留在太阳能电池的衬底上，或可随后移除。虽然如此，太阳能电池结构可最终保留或至少暂时包括这种环形特征。例如，图5示出了根据本发明的一个实施例的太阳能电池的衬底的剖视图和俯视图，所述衬底具有形成于其上的层。
参见图5，根据本发明的一个实施例，太阳能电池的衬底包括设置在晶片502的所有表面上的隧道氧化层504。多晶层506设置在隧道氧化层504上，多晶层506设置在隧道氧化层504除晶片502的背侧之外的所有部分上，所述背侧包括多晶层506的环形图案。根据本发明的一个实施例，所述环形图案是晶片对的背对背装载的结果，如参照图4C所述。在一个实施例中，隧道氧化层504由二氧化硅构成，晶片502由硅构成，多晶层506由硅构成。
再参见图5，根据本发明的另一个实施例，太阳能电池的衬底包括设置在晶片502的所有表面上的隧道氧化层504。非晶态层506设置在隧道氧化层504上，非晶态层506设置在隧道氧化层504除晶片502的背侧之外的所有部分上，所述背侧包括非晶态层506的环形图案。根据本发明的一个实施例，所述环形图案是晶片对的背对背装载的结果，如参照图4C所述。在一个实施例中，隧道氧化层504由二氧化硅构成，晶片502由硅构成，非晶态层506由硅构成。
如此，公开了为太阳能电池制造发射极区域的方法。根据本发明的一个实施例，制造太阳能电池的发射极区域的方法包括在炉中于衬底表面上形成隧道氧化层。所述方法还包括在不从炉中取出衬底的情况下在隧道氧化层上形成非晶态层。所述方法还包括对非晶态层掺杂以形成具有N-型掺杂剂的第一区域和具有P-型掺杂剂的第二区域。随后，加热非晶态层以形成具有N-型掺杂区域和P-型掺杂区域的多晶层。在一个实施例中，衬底由硅构成，隧道氧化层由二氧化硅构成，非晶态层由硅构成，N-型掺杂剂为磷，P-型掺杂剂为硼。在一个实施例中，隧道氧化层和非晶态层二者均在大约565摄氏度的温度下形成，并且为形成多晶层而加热非晶态层包括在大约980摄氏度的温度下加热。

Claims (20)

1.一种制造太阳能电池的发射极区域的方法，所述方法包括：
在炉中于衬底表面上形成隧道氧化层；并且，在不从所述炉中取出所述衬底的情况下，
在所述隧道氧化层上形成非晶态层；
对所述非晶态层掺杂以形成包含N-型掺杂剂的第一区域和包含P-型掺杂剂的第二区域；并且，随后
加热所述非晶态层以形成包含N-型掺杂区域和P-型掺杂区域的多晶层。
2.根据权利要求1所述的方法，其中所述衬底包含硅，所述隧道氧化层包含二氧化硅，所述非晶态层包含硅，所述N-型掺杂剂包含磷，所述P-型掺杂剂包含硼。
3.根据权利要求1所述的方法，其中形成所述隧道氧化层包括在所述炉中于900摄氏度的温度下加热所述衬底。
4.根据权利要求3所述的方法，其中在所述炉中于900摄氏度的温度下加热所述衬底还包括在500毫托的压力下在氧气氛中加热3分钟以形成厚度为1.5纳米的所述隧道氧化层。
5.根据权利要求1所述的方法，其中形成所述隧道氧化层包括在所述炉中在低于600摄氏度的温度下加热所述衬底。
6.根据权利要求5所述的方法，其中在所述炉中在低于600摄氏度的温度下加热所述衬底还包括在565摄氏度的温度、300托的压力下在氧气氛中加热60分钟以形成厚度为1.5纳米的所述隧道氧化层。
7.根据权利要求1所述的方法，其中形成所述非晶态层包括在所述炉中在低于575摄氏度的温度下沉积所述非晶态层。
8.根据权利要求7所述的方法，其中在所述炉中在低于575摄氏度的温度下沉积所述非晶态层还包括在565摄氏度的温度、350毫托的压力下在硅烷(SiH4)气氛中加热以形成厚度在200-300纳米范围内的所述非晶态层。
9.根据权利要求1所述的方法，其中所述隧道氧化层和所述非晶态层二者均在565摄氏度的温度下形成，并且其中为形成所述多晶层而加热所述非晶态层包括在980摄氏度的温度下加热。
10.一种在太阳能电池的衬底上形成多个层的方法，所述方法包括：
向炉内装入载有多个晶片的晶片载体，所述晶片载体具有一个或多个装载两个背对背设置的晶片的晶片接纳槽；
在所述炉中在所述多个晶片中每一个的所有表面上形成隧道氧化层；并且，在不从所述炉中取出所述多个晶片的情况下，
在所述隧道氧化层上形成非晶态层，所述非晶态层形成在所述隧道氧化层的除背对背设置的晶片间接触部分之外的所有部分上。
11.根据权利要求10所述的方法，其中对于所述背对背设置的晶片，各个晶片的背部上形成有所述非晶态层的环形图案。
12.根据权利要求11所述的方法，所述方法还包括：在形成所述非晶态层之后向每个晶片的背部施加清洁溶液，所述清
洁溶液包含氧化剂；并且，随后向每个晶片的背部施加纹理化溶液，所述纹理化溶液包含氢氧化
物。
13.根据权利要求12所述的方法，其中所述氧化剂选自臭氧和过氧化氢(H2O2)，其中所述氢氧化物选自氢氧化钾(KOH)和氢氧化钠(NaOH)。
14.根据权利要求10所述的方法，其中所述多个晶片中的每一个包含硅，所述隧道氧化层包含二氧化硅，所述非晶态层包含硅。
15.根据权利要求10所述的方法，其中形成所述隧道氧化层包括在所述炉中于900摄氏度的温度下加热所述多个晶片中的每一个。
16.根据权利要求15所述的方法，其中在所述炉中于900摄氏度的温度下加热所述多个晶片中的每一个还包括在500毫托的压力下在氧气氛中加热3分钟以形成厚度为1.5纳米的所述隧道氧化层。
17.根据权利要求10所述的方法，其中形成所述隧道氧化层包括在所述炉中在低于600摄氏度的温度下加热所述多个晶片中的每一个。
18.根据权利要求17所述的方法，其中在所述炉中在低于600摄氏度的温度下加热所述多个晶片中的每一个还包括在565摄氏度的温度、300托的压力下在氧气氛中加热60分钟以形成厚度为1.5纳米的所述隧道氧化层。
19.根据权利要求10所述的方法，其中形成所述非晶态层包括在所述炉中在低于575摄氏度的温度下沉积所述非晶态层。
20.根据权利要求19所述的方法，其中在所述炉中在低于575摄氏度的温度下沉积所述非晶态层还包括在565摄氏度的温度、350毫托的压力下在硅烷(SiH4)气氛中加热以形成厚度在200-300纳米范围内的所述非晶态层。
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