JP6746854B2 - ワイドバンドギャップ半導体材料含有のエミッタ領域を有する太陽電池 - Google Patents
ワイドバンドギャップ半導体材料含有のエミッタ領域を有する太陽電池 Download PDFInfo
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- JP6746854B2 JP6746854B2 JP2018073440A JP2018073440A JP6746854B2 JP 6746854 B2 JP6746854 B2 JP 6746854B2 JP 2018073440 A JP2018073440 A JP 2018073440A JP 2018073440 A JP2018073440 A JP 2018073440A JP 6746854 B2 JP6746854 B2 JP 6746854B2
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- layer
- solar cell
- doped
- emitter region
- amorphous silicon
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- 239000004065 semiconductor Substances 0.000 title claims description 129
- 239000000463 material Substances 0.000 title claims description 59
- 239000000758 substrate Substances 0.000 claims description 101
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 24
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000002019 doping agent Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 210000004027 cell Anatomy 0.000 description 99
- 238000000034 method Methods 0.000 description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 54
- 229910052710 silicon Inorganic materials 0.000 description 54
- 239000010703 silicon Substances 0.000 description 54
- 238000004519 manufacturing process Methods 0.000 description 46
- 230000008569 process Effects 0.000 description 31
- 229920005591 polysilicon Polymers 0.000 description 25
- 238000002161 passivation Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000004320 controlled atmosphere Methods 0.000 description 13
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001429 visible spectrum Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000002679 ablation Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010952 in-situ formation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
[項目1]
太陽電池の製造方法であって、
制御雰囲気を有する処理ツールにて、前記処理ツールの前記制御雰囲気から半導体基板を除去することなしに前記太陽電池の前記半導体基板の表面上に薄い誘電体層を形成する段階と、
前記薄い誘電体層上に半導体層を形成する段階と、
を含み、
前記半導体基板がバンドギャップを有し、
前記半導体層のバンドギャップが前記半導体基板の前記バンドギャップを少なくとも約0.2エレクトロンボルト(eV)上回る、太陽電池の製造方法。
[項目2]
前記半導体層から前記太陽電池のエミッタ領域を形成する段階を更に含む、項目1に記載の太陽電池の製造方法。
[項目3]
前記半導体層を、約1×1017〜1×1021原子/cm3の範囲の濃度を有する電荷キャリアドーパント不純物原子でドープする段階を更に含む、項目1に記載の太陽電池の製造方法。
[項目4]
前記半導体層を形成する段階の間に前記ドープする段階がその場で実行される、項目3に記載の太陽電池の製造方法。
[項目5]
前記半導体層を形成する段階の後に前記ドープする段階が実行される、項目3に記載の太陽電池の製造方法。
[項目6]
前記半導体層を形成する段階が、可視スペクトルにて実質的に透明な層を形成する段階を含む、項目1に記載の太陽電池の製造方法。
[項目7]
前記可視スペクトルにて実質的に透明な前記層を形成する段階が、約3eVを超えるバンドギャップを有し、かつ、窒化アルミニウム(AlN)、窒化アルミニウムガリウム(AlxGa1−xN(式中、0<x<1))、窒化ホウ素(BN)、4H相の炭化ケイ素(SiC)、及び6H相の炭化ケイ素(SiC)からなるグループから選択される材料を含んでなる半導体層を形成する段階を含む、項目6に記載の太陽電池の製造方法。
[項目8]
前記半導体基板がn型単結晶シリコンを含み、前記半導体層を形成する段階が、約1.5eVを超えるバンドギャップを有し、かつ、アモルファスシリコン(a−Si)、炭化ケイ素、窒化アルミニウム(AlN)、窒化アルミニウムガリウム(AlxGa1−xN(式中、0<x<1))、及び窒化ホウ素(BN)からなるグループから選択される材料を含んでなる半導体層を形成する段階を含む、項目1に記載の太陽電池の製造方法。
[項目9]
前記半導体基板の前記表面上に前記薄い誘電体層を形成する段階が、前記半導体基板の一部を熱酸化によって消費させる段階を含む、項目1に記載の太陽電池の製造方法。
[項目10]
前記半導体基板の前記一部を消費させる段階が、n型単結晶シリコン基板の一部を熱酸化することによって厚さが約3ナノメートル以下の二酸化ケイ素(SiO2)層を形成する段階を含む、項目9に記載の太陽電池の製造方法。
[項目11]
前記半導体基板の前記表面上に前記薄い誘電体層を形成する段階が、前記半導体基板の前記表面上に誘電体材料層を堆積させる段階を含む、項目1に記載の太陽電池の製造方法。
[項目12]
前記半導体基板の前記表面上に前記誘電体材料層を堆積させる段階が、n型単結晶シリコン基板の表面上に酸化アルミニウム(Al2O3)層を形成する段階を含む、項目11に記載の太陽電池の製造方法。
[項目13]
前記処理ツールで前記薄い誘電体層及び前記半導体層を形成する段階が、低圧化学蒸着(LPCVD)チャンバ、急速熱アニール(RTA)チャンバ、高速熱アニール(RTP)チャンバ、大気圧化学蒸着(APCVD)チャンバ、ハイドライド気相成長(HVPE)チャンバ、又は、RTPチャンバ及びプラズマ強化化学蒸着(PECVD)チャンバの両方を使用する段階を含む、項目1に記載の太陽電池の製造方法。
[項目14]
前記薄い誘電体層を形成する段階に先立って前記半導体基板の前記表面を粗面化する段階を更に含む、項目1に記載の太陽電池の製造方法。
[項目15]
前記半導体基板の前記表面上に前記薄い誘電体層及び前記半導体層を形成する段階が、前記半導体基板の裏面側接触面上に形成する段階を含み、前記形成する段階が、前記半導体基板の受光表面上に前記薄い誘電体層及び前記半導体層を形成する段階を更に含む、項目1に記載の太陽電池の製造方法。
[項目16]
項目1に記載の太陽電池の製造方法に従って製造される太陽電池。
[項目17]
太陽電池の製造方法であって、
太陽電池の半導体基板の表面上に第1のエミッタ領域を形成する段階であって、前記第1のエミッタ領域が、第1の導電型にドープされかつ第1の薄い誘電体層上に形成された半導体材料を含む、段階と、
前記半導体基板の前記表面上に第2のエミッタ領域を形成する段階と、
を含み、
前記形成する段階が、
制御雰囲気を有する処理ツールにて、前記処理ツールの前記制御雰囲気から前記半導体基板を除去することなしに前記半導体基板の前記表面上に第2の薄い誘電体層を形成する段階であって、前記半導体基板がバンドギャップを有する、段階と、
前記第2の薄い誘電体層上にワイドバンドギャップ半導体層を形成する段階であって、前記ワイドバンドギャップ半導体層のバンドギャップが前記半導体基板の前記バンドギャップを少なくとも約0.2エレクトロンボルト(eV)上回る、段階と、
前記ワイドバンドギャップ半導体層を第2の、反対の導電型の電荷キャリアドーパント不純物原子でドープする段階と、
を含む、太陽電池の製造方法。
[項目18]
前記半導体基板がn型単結晶シリコンを含み、前記ワイドバンドギャップ半導体層を形成する段階が、約1.5eVを超えるバンドギャップを有し、かつ、アモルファスシリコン(a−Si)、炭化ケイ素、窒化アルミニウム(AlN)、窒化アルミニウムガリウム(AlxGa1−xN(式中、0<x<1))、及び窒化ホウ素(BN)からなるグループから選択される材料を含んでなる半導体層を形成する段階を含む、項目17に記載の太陽電池の製造方法。
[項目19]
前記第2の薄い誘電体層の形成に先立って前記半導体基板の前記表面を粗面化する段階を更に含む、項目17に記載の太陽電池の製造方法。
[項目20]
項目17に記載の太陽電池の製造方法に従って製造される太陽電池。
Claims (10)
- 単結晶シリコン基板と、
前記単結晶シリコン基板の表面上に配置された薄い酸化物層の上部に直接的に配置されたドープ済みアモルファスシリコン層であって、エミッタ領域であり、当該ドープ済みアモルファスシリコン層の全体にわたってドープされた前記ドープ済みアモルファスシリコン層と、
前記単結晶シリコン基板の表面に配置された第2のエミッタ領域と、
前記ドープ済みアモルファスシリコン層の直上に配置され、当該ドープ済みアモルファスシリコン層に導電的に接続された導電性コンタクトであって、金属製の導電性コンタクトと、
を備え、
前記ドープ済みアモルファスシリコン層の一部と、前記薄い酸化物層の一部とが前記第2のエミッタ領域の少なくとも一部の上部に配置される太陽電池。 - 単結晶シリコン基板と、
前記単結晶シリコン基板の表面上に配置された薄い酸化物層の上部に直接的に配置されたドープ済みアモルファスシリコン層であって、エミッタ領域であり、当該ドープ済みアモルファスシリコン層の全体にわたってドープされた前記ドープ済みアモルファスシリコン層と、
前記単結晶シリコン基板の表面に配置された第2のエミッタ領域と、
前記ドープ済みアモルファスシリコン層の直上に配置され、当該ドープ済みアモルファスシリコン層に導電的に接続された導電性コンタクトであって、金属製の導電性コンタクトと、
を備え、
前記ドープ済みアモルファスシリコン層の一部が前記第2のエミッタ領域の少なくとも一部の上部に配置され、
前記ドープ済みアモルファスシリコン層は、前記薄い酸化物層を介して前記単結晶シリコン基板の前記表面のうち粗面化された部分に配置される太陽電池。 - 前記導電性コンタクトは、アルミニウムを含む、請求項1または2に記載の太陽電池。
- 前記単結晶シリコン基板は、n型のドープ済み単結晶シリコン基板である、請求項1から3の何れか一項に記載の太陽電池。
- 前記第2のエミッタ領域は、前記ドープ済みアモルファスシリコン層の導電型とは反対の導電型を持つ半導体材料を含む、請求項1から4のいずれか一項に記載の太陽電池。
- 前記第2のエミッタ領域の前記半導体材料は、薄い誘電体層を介して前記単結晶シリコン基板の表面に配置される、請求項5に記載の太陽電池。
- 前記半導体材料は、多結晶シリコンを含む、請求項5または6に記載の太陽電池。
- 前記ドープ済みアモルファスシリコン層は、前記薄い酸化物層を介して前記単結晶シリコン基板の前記表面のうち粗面化された部分に配置され、
前記第2のエミッタ領域は、薄い誘電体層を介して前記単結晶シリコン基板の前記表面のうち粗面化されていない平坦部分に配置される、請求項5から7のいずれか一項に記載の太陽電池。 - 裏面接触型の太陽電池である、請求項1から8のいずれか一項に記載の太陽電池。
- 前記ドープ済みアモルファスシリコン層は、約1×1017〜1×1021原子/cm3の範囲のドーパント濃度を有する、請求項1から9のいずれか一項に記載の太陽電池。
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