BR112014023047A8 - método de fabricação de uma célula solar e célula solar fabricação - Google Patents

método de fabricação de uma célula solar e célula solar fabricação

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Publication number
BR112014023047A8
BR112014023047A8 BR112014023047A BR112014023047A BR112014023047A8 BR 112014023047 A8 BR112014023047 A8 BR 112014023047A8 BR 112014023047 A BR112014023047 A BR 112014023047A BR 112014023047 A BR112014023047 A BR 112014023047A BR 112014023047 A8 BR112014023047 A8 BR 112014023047A8
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BR
Brazil
Prior art keywords
solar cell
manufacturing
broadband
semiconductor substrate
semiconductor
Prior art date
Application number
BR112014023047A
Other languages
English (en)
Other versions
BR112014023047B1 (pt
Inventor
d smith David
M Bunea Marius
J Cousins Peter
M Swanson Richard
dennis Tim
Shen Yu-Chen
Original Assignee
Sunpower Corp
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Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of BR112014023047A8 publication Critical patent/BR112014023047A8/pt
Publication of BR112014023047B1 publication Critical patent/BR112014023047B1/pt

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    • H—ELECTRICITY
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    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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    • H01L31/02—Details
    • H01L31/0224—Electrodes
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    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

método de fabricação de uma célula solar e célula solar fabricada. células solares tendo regiões emissoras compostas de material semicondutor de ampla banda larga são descritas. em um exemplo, um método inclui a formação, em uma ferramenta do processo tendo uma atmosfera controlada, uma camada dielétrica fina em uma superfície de um substrato semicondutor da célula solar. o substrato semicondutor tem uma banda larga. sem a remoção da substrato semicondutor da atmosfera controlada da ferramenta do processo, uma camada semicondutora é formada na camada dielétrica fina. a camada semicondutora tem uma banda larga de aproximadamente 0.2 elétrons volts (ev) acima da banda larga do substrato semicondutor.
BR112014023047-1A 2012-03-23 2012-12-19 Método de fabricação de uma célula solar e célula solar fabricada BR112014023047B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/429,138 2012-03-23
US13/429,138 US9054255B2 (en) 2012-03-23 2012-03-23 Solar cell having an emitter region with wide bandgap semiconductor material
PCT/US2012/070711 WO2013141917A1 (en) 2012-03-23 2012-12-19 Solar cell having an emitter region with wide bandgap semiconductor material

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Publication Number Publication Date
BR112014023047A8 true BR112014023047A8 (pt) 2021-03-16
BR112014023047B1 BR112014023047B1 (pt) 2023-01-10

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US (6) US9054255B2 (pt)
EP (1) EP2828897B1 (pt)
JP (3) JP6178400B2 (pt)
KR (3) KR102100909B1 (pt)
CN (1) CN104396024B (pt)
BR (1) BR112014023047B1 (pt)
MX (1) MX338942B (pt)
MY (2) MY194039A (pt)
PH (1) PH12014502088A1 (pt)
SG (1) SG11201405888PA (pt)
TW (1) TWI575764B (pt)
WO (1) WO2013141917A1 (pt)

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EP4092757A1 (en) 2013-04-03 2022-11-23 Lg Electronics Inc. Method for fabricating a solar cell
US9401450B2 (en) * 2013-12-09 2016-07-26 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
US9224783B2 (en) * 2013-12-23 2015-12-29 Intermolecular, Inc. Plasma densification of dielectrics for improved dielectric loss tangent
KR101614190B1 (ko) * 2013-12-24 2016-04-20 엘지전자 주식회사 태양전지 및 이의 제조 방법
KR102173644B1 (ko) * 2014-01-29 2020-11-03 엘지전자 주식회사 태양 전지 및 이의 제조 방법
JP2015156418A (ja) * 2014-02-20 2015-08-27 株式会社ニューフレアテクノロジー 気相成長方法
US11811360B2 (en) 2014-03-28 2023-11-07 Maxeon Solar Pte. Ltd. High voltage solar modules
US9337369B2 (en) * 2014-03-28 2016-05-10 Sunpower Corporation Solar cells with tunnel dielectrics
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