MX338942B - Celda solar que tiene una region emisora con material semiconductor de banda prohibida ancha. - Google Patents

Celda solar que tiene una region emisora con material semiconductor de banda prohibida ancha.

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Publication number
MX338942B
MX338942B MX2014011246A MX2014011246A MX338942B MX 338942 B MX338942 B MX 338942B MX 2014011246 A MX2014011246 A MX 2014011246A MX 2014011246 A MX2014011246 A MX 2014011246A MX 338942 B MX338942 B MX 338942B
Authority
MX
Mexico
Prior art keywords
solar cell
semiconductor material
wide bandgap
emitter region
bandgap
Prior art date
Application number
MX2014011246A
Other languages
English (en)
Other versions
MX2014011246A (es
Inventor
Richard M Swanson
Marius M Buena
David D Smith
Yu-Chen Shen
Peter J Cousins
Tim Dennis
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of MX2014011246A publication Critical patent/MX2014011246A/es
Publication of MX338942B publication Critical patent/MX338942B/es

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    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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    • H01L31/02—Details
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    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Se describen celdas solares que tienen regiones emisoras compuestas de material semiconductor de banda prohibida ancha. En un ejemplo, un método incluye formar, en una herramienta de proceso que tiene atmósfera controlada, una capa dieléctrica delgada sobre una superficie de un substrato semiconductor de la celda solar. El substrato semiconductor tiene una banda prohibida. Sin sacar el substrato semiconductor de la atmósfera controlada de la herramienta de proceso, se forma una capa semiconductora sobre la capa dieléctrica delgada. La capa semiconductora tiene una banda prohibida por lo menos aproximadamente 0.2 electrón-volt (eV) por encima de la banda prohibida del substrato semiconductor.
MX2014011246A 2012-03-23 2012-12-19 Celda solar que tiene una region emisora con material semiconductor de banda prohibida ancha. MX338942B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/429,138 US9054255B2 (en) 2012-03-23 2012-03-23 Solar cell having an emitter region with wide bandgap semiconductor material
PCT/US2012/070711 WO2013141917A1 (en) 2012-03-23 2012-12-19 Solar cell having an emitter region with wide bandgap semiconductor material

Publications (2)

Publication Number Publication Date
MX2014011246A MX2014011246A (es) 2015-03-09
MX338942B true MX338942B (es) 2016-05-06

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MX2014011246A MX338942B (es) 2012-03-23 2012-12-19 Celda solar que tiene una region emisora con material semiconductor de banda prohibida ancha.

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US (7) US9054255B2 (es)
EP (1) EP2828897B1 (es)
JP (3) JP6178400B2 (es)
KR (3) KR101991767B1 (es)
CN (1) CN104396024B (es)
BR (1) BR112014023047B1 (es)
MX (1) MX338942B (es)
MY (2) MY171189A (es)
PH (1) PH12014502088A1 (es)
SG (1) SG11201405888PA (es)
TW (1) TWI575764B (es)
WO (1) WO2013141917A1 (es)

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US9401450B2 (en) * 2013-12-09 2016-07-26 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
US9224783B2 (en) * 2013-12-23 2015-12-29 Intermolecular, Inc. Plasma densification of dielectrics for improved dielectric loss tangent
KR101614190B1 (ko) * 2013-12-24 2016-04-20 엘지전자 주식회사 태양전지 및 이의 제조 방법
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JP2015156418A (ja) * 2014-02-20 2015-08-27 株式会社ニューフレアテクノロジー 気相成長方法
US9337369B2 (en) 2014-03-28 2016-05-10 Sunpower Corporation Solar cells with tunnel dielectrics
US11811360B2 (en) 2014-03-28 2023-11-07 Maxeon Solar Pte. Ltd. High voltage solar modules
JP6350858B2 (ja) * 2014-05-26 2018-07-04 パナソニックＩｐマネジメント株式会社 太陽電池の製造方法及び太陽電池
US9825191B2 (en) * 2014-06-27 2017-11-21 Sunpower Corporation Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials
US20160072000A1 (en) * 2014-09-05 2016-03-10 David D. Smith Front contact heterojunction process
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