JP2020509596A - こけら板状ソーラーモジュールを製造する方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title description 11
- 238000000034 method Methods 0.000 claims abstract description 46
- 239000000853 adhesive Substances 0.000 claims abstract description 11
- 230000001070 adhesive effect Effects 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 230000006798 recombination Effects 0.000 claims abstract description 9
- 238000005215 recombination Methods 0.000 claims abstract description 8
- 238000002161 passivation Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 24
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 104
- 239000011521 glass Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 10
- 238000000926 separation method Methods 0.000 description 8
- 239000002803 fossil fuel Substances 0.000 description 7
- 239000005038 ethylene vinyl acetate Substances 0.000 description 6
- 238000009432 framing Methods 0.000 description 6
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/36—Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
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- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
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- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/906—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the materials of the structures
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Abstract
Description
本開示の例示的実施形態のさらなる詳細および態様は、添付図面を参照して以下により詳しく記述される。
Claims (15)
- 複数のストリップを形成するためにケイ素ソーラーセルを分離することであって、前記分離することは、ソーラーセルの非パッシベーション部を露出させる、分離することと、
オゾン室内での酸化、パッシベーション材料の堆積、または熱処理のうち1つ以上によって前記複数のストリップを再パッシベーションすることであって、前記再パッシベーションすることは、活性の再結合中心を除去する、再パッシベーションすることと、
前記再パッシベーションされたストリップを、互いに重なるパターンに整列させることと、
前記再パッシベーションされたストリップの重なった部分の間に導電性の接着剤(ECA)を堆積させることであって、前記ECAは隣接する再パッシベーションされたストリップを互いに接着し、前記再パッシベーションされたストリップがストリングを形成するよう電気的に接続する、ECAを堆積させることと、
前記ストリングをカプセル化することと、
を含む方法。 - 同様の形状のストリップをグループ化するために前記ストリップをソートすることをさらに含む、請求項1に記載の方法。
- 前記ソートすることは、前記分離されたストリップを、前記非パッシベーション部を整列させてスタック内に配置することを含む、請求項1に記載の方法。
- 前記スタックの、少なくとも上面および底面をカバーすることをさらに含む、請求項3に記載の方法。
- 非パッシベーション部のみを露出させて、前記スタック内に配置された前記ストリップのパッシベーションされた表面をすべてカバーすることを含む、請求項3に記載の方法。
- パッシベーション材料の侵入を制限するために、前記スタックに圧力を印加することをさらに含む、請求項3に記載の方法。
- 前記再パッシベーションは、前記ストリップの前記非パッシベーション部を熱処理することによって達成される、請求項6に記載の方法。
- 前記再パッシベーションは、前記ストリップの前記非パッシベーション部をオゾン室内で酸化することによって達成される、請求項6に記載の方法。
- 前記再パッシベーションは、前記ストリップの前記非パッシベーション部上にパッシベーション材料を堆積させることによって達成される、請求項6に記載の方法。
- 前記ストリップの全体を再パッシベーションに曝露することをさらに含む、請求項1に記載の方法。
- 前記ソーラーセルは正方形のソーラーセルである、請求項1に記載の方法。
- 前記ソーラーセルは疑似正方形のソーラーセルである、請求項1に記載の方法。
- 前記ソーラーセルは、少なくとも一方の側にバスバーを含む、請求項1に記載の方法。
- 前記ソーラーセルは、少なくとも一方の側にフィンガーを含む、請求項1に記載の方法。
- 2つ以上のストリップを形成するためにケイ素ソーラーセルを分離することであって、前記分離することは、前記ソーラーセルの非パッシベーション部を露出させる、分離することと、
オゾン室内での酸化、パッシベーション材料の堆積、または熱処理のうち1つ以上によって前記複数のストリップを再パッシベーションすることであって、前記再パッシベーションすることは、活性の再結合中心を除去する、再パッシベーションすることと、
前記再パッシベーションされたストリップを整列してストリングにすることと、
前記ストリングの前記再パッシベーションされたストリップを電気的に接続することと、
前記ストリングをカプセル化することと
を含む、方法。
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PCT/CN2018/073256 WO2019140606A1 (en) | 2018-01-18 | 2018-01-18 | Method of manufacturing shingled solar modules |
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US (1) | US20200381577A1 (ja) |
EP (1) | EP3552245B1 (ja) |
JP (1) | JP2020509596A (ja) |
KR (1) | KR20200104211A (ja) |
CN (1) | CN110915002A (ja) |
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EP4145537A4 (en) * | 2020-04-30 | 2024-08-07 | Zhejiang Jinko Solar Co., Ltd. | SCREEN STRUCTURE BY ASSEMBLING SHINGLES |
US11764315B2 (en) * | 2020-09-16 | 2023-09-19 | Maxeon Solar Pte. Ltd. | Solar cell separation with edge coating |
EP4177965A1 (en) * | 2021-11-08 | 2023-05-10 | Golden Solar (Quanzhou) New Energy Technology Co., Ltd. | Welding method for flexible and rollable silicon-based solar module |
US12059740B2 (en) * | 2021-11-08 | 2024-08-13 | Golden Solar (Quanzhou) New Energy Technology Co., Ltd. | Welding method for flexible and rollable silicon-based solar module |
CN118431340A (zh) * | 2024-04-25 | 2024-08-02 | 环晟光伏(江苏)有限公司 | 一种减小TOPCon太阳能电池切割后漏电流的方法 |
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- 2018-01-18 JP JP2019547475A patent/JP2020509596A/ja active Pending
- 2018-01-18 US US16/469,056 patent/US20200381577A1/en not_active Abandoned
- 2018-01-18 AU AU2018403240A patent/AU2018403240A1/en not_active Abandoned
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Also Published As
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EP3552245A4 (en) | 2020-07-08 |
KR20200104211A (ko) | 2020-09-03 |
CN110915002A (zh) | 2020-03-24 |
EP3552245A1 (en) | 2019-10-16 |
EP3552245B1 (en) | 2021-09-08 |
WO2019140606A1 (en) | 2019-07-25 |
AU2018403240A1 (en) | 2020-07-30 |
US20200381577A1 (en) | 2020-12-03 |
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