CN107026218B - 制造太阳能电池的方法 - Google Patents
制造太阳能电池的方法 Download PDFInfo
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- CN107026218B CN107026218B CN201710054307.3A CN201710054307A CN107026218B CN 107026218 B CN107026218 B CN 107026218B CN 201710054307 A CN201710054307 A CN 201710054307A CN 107026218 B CN107026218 B CN 107026218B
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 109
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- 229910052682 stishovite Inorganic materials 0.000 description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
Description
隐含Voc(mV) | |
样本1 | 720至730 |
样本2 | 680 |
样本3 | 735 |
样本4 | 680 |
Claims (16)
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EP (1) | EP3200243B1 (zh) |
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US10367115B2 (en) * | 2016-01-29 | 2019-07-30 | Lg Electronics Inc. | Method of manufacturing solar cell |
TWI662715B (zh) * | 2017-10-27 | 2019-06-11 | 財團法人工業技術研究院 | 太陽能電池 |
CN109004063B (zh) * | 2018-07-06 | 2020-06-09 | 横店集团东磁股份有限公司 | 一种晶硅太阳电池的热氧化方法 |
CN111081810A (zh) * | 2018-10-18 | 2020-04-28 | 中国科学院宁波材料技术与工程研究所 | 提升隧穿氧/多晶硅钝化接触结构的钝化性能的方法 |
CN109698245A (zh) * | 2018-11-20 | 2019-04-30 | 缪清 | 一种pi缓冲层的制备方法 |
CN109980019A (zh) * | 2019-03-28 | 2019-07-05 | 江苏日托光伏科技股份有限公司 | 一种二氧化硅隧穿层的制备方法 |
US11075308B1 (en) | 2020-06-19 | 2021-07-27 | Pharos Materials, Inc. | Vanadium-containing electrodes and interconnects to transparent conductors |
CN113506841A (zh) * | 2021-07-09 | 2021-10-15 | 西乡(上海)国际贸易有限公司 | 一种隧穿氧化钝化接触电池、制备方法及设备 |
CN114784148B (zh) * | 2022-06-15 | 2022-09-23 | 浙江晶科能源有限公司 | 太阳能电池的制备方法及太阳能电池、光伏组件 |
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US5057439A (en) * | 1990-02-12 | 1991-10-15 | Electric Power Research Institute | Method of fabricating polysilicon emitters for solar cells |
JPH08254392A (ja) | 1995-03-17 | 1996-10-01 | Fujitsu Ltd | 基板の熱処理方法及び熱処理装置 |
US5907766A (en) | 1996-10-21 | 1999-05-25 | Electric Power Research Institute, Inc. | Method of making a solar cell having improved anti-reflection passivation layer |
NL1029647C2 (nl) | 2005-07-29 | 2007-01-30 | Otb Group Bv | Werkwijze voor het passiveren van ten minste een deel van een substraatoppervlak. |
US7718888B2 (en) * | 2005-12-30 | 2010-05-18 | Sunpower Corporation | Solar cell having polymer heterojunction contacts |
WO2011005447A2 (en) * | 2009-06-22 | 2011-01-13 | International Business Machines Corporation | Semiconductor optical detector structure |
DE102010003784A1 (de) | 2010-04-09 | 2011-10-13 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Solarzelle |
US8334161B2 (en) * | 2010-07-02 | 2012-12-18 | Sunpower Corporation | Method of fabricating a solar cell with a tunnel dielectric layer |
US20120073650A1 (en) * | 2010-09-24 | 2012-03-29 | David Smith | Method of fabricating an emitter region of a solar cell |
US8658458B2 (en) * | 2011-06-15 | 2014-02-25 | Varian Semiconductor Equipment Associates, Inc. | Patterned doping for polysilicon emitter solar cells |
US20130048070A1 (en) | 2011-08-26 | 2013-02-28 | Arash Hazeghi | Tunnel photovoltaic |
CN102983214B (zh) * | 2012-11-19 | 2015-05-20 | 苏州阿特斯阳光电力科技有限公司 | 一种选择性发射极晶体硅太阳电池的制备方法 |
KR102060709B1 (ko) | 2013-03-18 | 2019-12-30 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
US9559222B2 (en) * | 2013-08-14 | 2017-01-31 | Arizona Board Of Regents On Behalf Of Arizona State University | Method and tool to reverse the charges in anti-reflection films used for solar cell applications |
DE102013219565A1 (de) * | 2013-09-27 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaische Solarzelle und Verfahren zum Herstellen einer photovoltaischen Solarzelle |
KR101613846B1 (ko) * | 2014-06-10 | 2016-04-20 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR102219804B1 (ko) * | 2014-11-04 | 2021-02-24 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
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JP6392385B2 (ja) | 2018-09-19 |
EP3200243B1 (en) | 2020-03-11 |
CN110061096B (zh) | 2023-02-28 |
JP2017135386A (ja) | 2017-08-03 |
EP3200243A1 (en) | 2017-08-02 |
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