JP6392385B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP6392385B2 JP6392385B2 JP2017013392A JP2017013392A JP6392385B2 JP 6392385 B2 JP6392385 B2 JP 6392385B2 JP 2017013392 A JP2017013392 A JP 2017013392A JP 2017013392 A JP2017013392 A JP 2017013392A JP 6392385 B2 JP6392385 B2 JP 6392385B2
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- silicon oxide
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Description
Claims (12)
- 半導体基板上にシリコン酸化物層を形成するステップと、
連続して前記シリコン酸化物層を570℃〜700℃の温度に露出させてアニーリング(annealing)するステップと、
を含み、
前記アニーリングするステップにおいて、前記シリコン酸化物層を1〜1.5nmの厚さのトンネル層に変換し、
前記アニーリングするステップにおいて、前記シリコン酸化物層は、700℃よりも低い温度から、第1区間の間徐々に700℃付近まで加熱された後、第2区間の間700℃付近の温度を維持し、その後第3区間の間前記700℃より低い温度に徐々に下降させ、
前記第3区間の間の1分当たりの下降温度は、前記第1区間の間の1分当たりの上昇温度よりも小さい、太陽電池の製造方法。 - 前記第1区間の間の1分当たりの上昇温度は10℃である、請求項1に記載の太陽電池の製造方法。
- 前記第1区間は8分〜12分である、請求項1に記載の太陽電池の製造方法。
- 前記低い温度は、600℃と同一またはそれより高い温度である、請求項1に記載の太陽電池の製造方法。
- 前記第2区間は12分〜18分である、請求項1に記載の太陽電池の製造方法。
- 前記第3区間の間の1分当たりの下降温度は5℃である、請求項1に記載の太陽電池の製造方法。
- 前記第1区間は、前記第2区間よりも短いか、または前記第3区間よりも短い、請求項1に記載の太陽電池の製造方法。
- 前記第1区間、第2区間、及び第3区間を合わせた時間は、1時間と同一またはそれより短い、請求項1に記載の太陽電池の製造方法。
- 前記シリコン酸化物層を形成するステップ及び前記シリコン酸化物層を570℃〜700℃の温度に露出させてアニーリング(annealing)するステップは、インサイチュ(in−situ)工程で行われる、請求項1に記載の太陽電池の製造方法。
- 前記シリコン酸化物層は、前記半導体基板の表面を湿式酸化して形成するか、化学溶液に露出させて形成するか、または熱酸化により形成する、請求項1に記載の太陽電池の製造方法。
- 前記シリコン酸化物層はSiO2である、請求項10に記載の太陽電池の製造方法。
- 半導体基板上に第1温度でシリコン酸化物層を形成するステップと、
前記シリコン酸化物層を第2温度でアニーリング(annealing)してトンネル層を形成するステップと、
前記トンネル層上に多結晶シリコン層を形成するステップと、
を含み、
前記シリコン酸化物層を形成するステップにおいて、前記シリコン酸化物層は、チャンバー内で熱酸化によって形成され、
前記トンネル層を形成するステップは、前記チャンバー内でインサイチュ(in−situ)工程で連続して行われ、
前記第1温度と前記第2温度は同一であり、
前記第2温度は570℃〜700℃である、太陽電池の製造方法。
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