CN106067418B - 蚀刻处理方法 - Google Patents
蚀刻处理方法 Download PDFInfo
- Publication number
- CN106067418B CN106067418B CN201610252496.0A CN201610252496A CN106067418B CN 106067418 B CN106067418 B CN 106067418B CN 201610252496 A CN201610252496 A CN 201610252496A CN 106067418 B CN106067418 B CN 106067418B
- Authority
- CN
- China
- Prior art keywords
- etching
- film
- gas
- processing method
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
- H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
- Plasma Technology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910508471.6A CN110246760B (zh) | 2015-04-22 | 2016-04-21 | 蚀刻方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-087900 | 2015-04-22 | ||
| JP2015087900A JP6498022B2 (ja) | 2015-04-22 | 2015-04-22 | エッチング処理方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910508471.6A Division CN110246760B (zh) | 2015-04-22 | 2016-04-21 | 蚀刻方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106067418A CN106067418A (zh) | 2016-11-02 |
| CN106067418B true CN106067418B (zh) | 2019-07-05 |
Family
ID=55806203
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610252496.0A Expired - Fee Related CN106067418B (zh) | 2015-04-22 | 2016-04-21 | 蚀刻处理方法 |
| CN201910508471.6A Active CN110246760B (zh) | 2015-04-22 | 2016-04-21 | 蚀刻方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910508471.6A Active CN110246760B (zh) | 2015-04-22 | 2016-04-21 | 蚀刻方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9666446B2 (https=) |
| EP (2) | EP3086359B1 (https=) |
| JP (1) | JP6498022B2 (https=) |
| KR (1) | KR102035890B1 (https=) |
| CN (2) | CN106067418B (https=) |
Families Citing this family (68)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9997374B2 (en) | 2015-12-18 | 2018-06-12 | Tokyo Electron Limited | Etching method |
| JP6498152B2 (ja) * | 2015-12-18 | 2019-04-10 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6385915B2 (ja) * | 2015-12-22 | 2018-09-05 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6568822B2 (ja) * | 2016-05-16 | 2019-08-28 | 東京エレクトロン株式会社 | エッチング方法 |
| KR102356741B1 (ko) | 2017-05-31 | 2022-01-28 | 삼성전자주식회사 | 절연층들을 갖는 반도체 소자 및 그 제조 방법 |
| WO2019028136A1 (en) * | 2017-08-04 | 2019-02-07 | Lam Research Corporation | SELECTIVE DEPOSITION OF SILICON NITRIDE ON HORIZONTAL SURFACES |
| JP6945388B2 (ja) * | 2017-08-23 | 2021-10-06 | 東京エレクトロン株式会社 | エッチング方法及びエッチング処理装置 |
| JP6883495B2 (ja) * | 2017-09-04 | 2021-06-09 | 東京エレクトロン株式会社 | エッチング方法 |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10847374B2 (en) * | 2017-10-31 | 2020-11-24 | Lam Research Corporation | Method for etching features in a stack |
| US10811267B2 (en) | 2017-12-21 | 2020-10-20 | Micron Technology, Inc. | Methods of processing semiconductor device structures and related systems |
| JP7158252B2 (ja) * | 2018-02-15 | 2022-10-21 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| JP7018801B2 (ja) * | 2018-03-29 | 2022-02-14 | 東京エレクトロン株式会社 | プラズマ処理装置、及び被処理体の搬送方法 |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11270889B2 (en) | 2018-06-04 | 2022-03-08 | Tokyo Electron Limited | Etching method and etching apparatus |
| JP7325224B2 (ja) | 2018-06-04 | 2023-08-14 | 東京エレクトロン株式会社 | エッチング処理方法およびエッチング処理装置 |
| JP7204348B2 (ja) * | 2018-06-08 | 2023-01-16 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| KR102554014B1 (ko) * | 2018-06-15 | 2023-07-11 | 삼성전자주식회사 | 저온 식각 방법 및 플라즈마 식각 장치 |
| JP7175239B2 (ja) * | 2018-06-22 | 2022-11-18 | 東京エレクトロン株式会社 | 制御方法、プラズマ処理装置、プログラム及び記憶媒体 |
| US10720334B2 (en) | 2018-07-20 | 2020-07-21 | Asm Ip Holding B.V. | Selective cyclic dry etching process of dielectric materials using plasma modification |
| US10720337B2 (en) * | 2018-07-20 | 2020-07-21 | Asm Ip Holding B.V. | Pre-cleaning for etching of dielectric materials |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| JP7229033B2 (ja) * | 2019-02-01 | 2023-02-27 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| KR102904251B1 (ko) * | 2019-02-18 | 2025-12-24 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| JP7190940B2 (ja) | 2019-03-01 | 2022-12-16 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP7277225B2 (ja) | 2019-04-08 | 2023-05-18 | 東京エレクトロン株式会社 | エッチング方法、及び、プラズマ処理装置 |
| CN111557047B (zh) * | 2019-06-28 | 2021-07-09 | 长江存储科技有限责任公司 | 半导体器件制造方法 |
| JP7372073B2 (ja) | 2019-08-02 | 2023-10-31 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及びクリーニング装置 |
| JP7390134B2 (ja) | 2019-08-28 | 2023-12-01 | 東京エレクトロン株式会社 | エッチング処理方法およびエッチング処理装置 |
| CN114342043A (zh) | 2019-08-30 | 2022-04-12 | 朗姆研究公司 | 低压下的高密度、模量和硬度的非晶碳膜 |
| WO2021090516A1 (ja) | 2019-11-08 | 2021-05-14 | 東京エレクトロン株式会社 | エッチング方法 |
| CN112786441B (zh) * | 2019-11-08 | 2026-01-23 | 东京毅力科创株式会社 | 蚀刻方法及等离子体处理装置 |
| SG10202010798QA (en) * | 2019-11-08 | 2021-06-29 | Tokyo Electron Ltd | Etching method and plasma processing apparatus |
| JP2021174872A (ja) | 2020-04-24 | 2021-11-01 | 東京エレクトロン株式会社 | 配管システム及び処理装置 |
| US11087989B1 (en) | 2020-06-18 | 2021-08-10 | Applied Materials, Inc. | Cryogenic atomic layer etch with noble gases |
| JP7595431B2 (ja) | 2020-07-21 | 2024-12-06 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| TWI895472B (zh) * | 2020-08-17 | 2025-09-01 | 日商東京威力科創股份有限公司 | 蝕刻方法及蝕刻裝置 |
| JP7534046B2 (ja) | 2020-08-19 | 2024-08-14 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| JP7565763B2 (ja) * | 2020-11-17 | 2024-10-11 | 東京エレクトロン株式会社 | 基板処理方法および基板処理システム |
| JP7638700B2 (ja) | 2020-12-24 | 2025-03-04 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US12525433B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Method and apparatus to reduce feature charging in plasma processing chamber |
| US12525441B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| JP7837163B2 (ja) * | 2021-12-03 | 2026-03-30 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| WO2023224950A1 (en) * | 2022-05-19 | 2023-11-23 | Lam Research Corporation | Hardmask for high aspect ratio dielectric etch at cryo and elevated temperatures |
| KR20250019693A (ko) * | 2022-06-02 | 2025-02-10 | 램 리써치 코포레이션 | 도핑된 실리콘 산화물의 감소된 온도 에칭 |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12586768B2 (en) | 2022-08-10 | 2026-03-24 | Applied Materials, Inc. | Pulsed voltage compensation for plasma processing applications |
| JP7756056B2 (ja) | 2022-08-25 | 2025-10-17 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| US20250022714A1 (en) * | 2023-07-13 | 2025-01-16 | Applied Materials, Inc. | Cyclic etch of silicon oxide and silicon nitride |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101154569A (zh) * | 2002-06-27 | 2008-04-02 | 东京毅力科创株式会社 | 等离子体处理方法 |
| US7432207B2 (en) * | 2001-08-31 | 2008-10-07 | Tokyo Electron Limited | Method for etching object to be processed |
| CN101826435A (zh) * | 2009-03-04 | 2010-09-08 | 东京毅力科创株式会社 | 等离子蚀刻方法、等离子蚀刻装置及计算机存储介质 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5772346A (en) | 1980-10-24 | 1982-05-06 | Toshiba Corp | Manufacture of semiconductor device |
| JPH0722149B2 (ja) | 1983-11-28 | 1995-03-08 | 株式会社日立製作所 | 平行平板形ドライエッチング装置 |
| JPH07104927B2 (ja) | 1985-08-30 | 1995-11-13 | キヤノン株式会社 | 画像処理装置 |
| US5279705A (en) * | 1990-11-28 | 1994-01-18 | Dainippon Screen Mfg. Co., Ltd. | Gaseous process for selectively removing silicon nitride film |
| JP2758754B2 (ja) * | 1991-12-05 | 1998-05-28 | シャープ株式会社 | プラズマエッチング方法 |
| JP3179872B2 (ja) * | 1991-12-19 | 2001-06-25 | 東京エレクトロン株式会社 | エッチング方法 |
| JPH0722393A (ja) | 1993-06-23 | 1995-01-24 | Toshiba Corp | ドライエッチング装置及びドライエッチング方法 |
| JPH0722149A (ja) | 1993-06-28 | 1995-01-24 | Yazaki Corp | 電線の接続装置及び接続方法 |
| JP2956524B2 (ja) | 1995-04-24 | 1999-10-04 | 日本電気株式会社 | エッチング方法 |
| JP3524763B2 (ja) * | 1998-05-12 | 2004-05-10 | 株式会社日立製作所 | エッチング方法 |
| JP2008028022A (ja) * | 2006-07-19 | 2008-02-07 | Tokyo Electron Ltd | プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 |
| JP5719648B2 (ja) * | 2011-03-14 | 2015-05-20 | 東京エレクトロン株式会社 | エッチング方法、およびエッチング装置 |
| US8598040B2 (en) * | 2011-09-06 | 2013-12-03 | Lam Research Corporation | ETCH process for 3D flash structures |
| US9384992B2 (en) * | 2012-02-09 | 2016-07-05 | Tokyo Electron Limited | Plasma processing method |
| JP5968130B2 (ja) * | 2012-07-10 | 2016-08-10 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP5878091B2 (ja) * | 2012-07-20 | 2016-03-08 | 東京エレクトロン株式会社 | エッチング方法 |
| WO2014069559A1 (ja) * | 2012-11-01 | 2014-05-08 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP6211947B2 (ja) * | 2013-07-31 | 2017-10-11 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP6140575B2 (ja) * | 2013-08-26 | 2017-05-31 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP6423643B2 (ja) * | 2014-08-08 | 2018-11-14 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
| US9728422B2 (en) * | 2015-01-23 | 2017-08-08 | Central Glass Company, Limited | Dry etching method |
| JP6339963B2 (ja) * | 2015-04-06 | 2018-06-06 | 東京エレクトロン株式会社 | エッチング方法 |
| US9613824B2 (en) * | 2015-05-14 | 2017-04-04 | Tokyo Electron Limited | Etching method |
-
2015
- 2015-04-22 JP JP2015087900A patent/JP6498022B2/ja active Active
-
2016
- 2016-04-18 US US15/131,221 patent/US9666446B2/en active Active
- 2016-04-19 KR KR1020160047622A patent/KR102035890B1/ko active Active
- 2016-04-21 CN CN201610252496.0A patent/CN106067418B/zh not_active Expired - Fee Related
- 2016-04-21 EP EP16166355.4A patent/EP3086359B1/en active Active
- 2016-04-21 CN CN201910508471.6A patent/CN110246760B/zh active Active
- 2016-04-21 EP EP19188564.9A patent/EP3621102A1/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7432207B2 (en) * | 2001-08-31 | 2008-10-07 | Tokyo Electron Limited | Method for etching object to be processed |
| CN101154569A (zh) * | 2002-06-27 | 2008-04-02 | 东京毅力科创株式会社 | 等离子体处理方法 |
| CN101826435A (zh) * | 2009-03-04 | 2010-09-08 | 东京毅力科创株式会社 | 等离子蚀刻方法、等离子蚀刻装置及计算机存储介质 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110246760A (zh) | 2019-09-17 |
| EP3086359A1 (en) | 2016-10-26 |
| US9666446B2 (en) | 2017-05-30 |
| JP2016207840A (ja) | 2016-12-08 |
| CN110246760B (zh) | 2023-02-17 |
| EP3621102A1 (en) | 2020-03-11 |
| KR102035890B1 (ko) | 2019-10-23 |
| CN106067418A (zh) | 2016-11-02 |
| EP3086359B1 (en) | 2019-09-11 |
| KR20160125896A (ko) | 2016-11-01 |
| US20160314986A1 (en) | 2016-10-27 |
| JP6498022B2 (ja) | 2019-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106067418B (zh) | 蚀刻处理方法 | |
| US10707090B2 (en) | Plasma etching method | |
| JP6604911B2 (ja) | エッチング処理方法 | |
| TWI710021B (zh) | 蝕刻處理方法 | |
| CN109755123B (zh) | 等离子体蚀刻方法 | |
| US10600654B2 (en) | Etching process method | |
| KR20160129769A (ko) | 에칭 방법 및 에칭 장치 | |
| TW202147925A (zh) | 電漿處理裝置及電漿處理方法 | |
| JP6243722B2 (ja) | エッチング処理方法 | |
| TWI685014B (zh) | 蝕刻方法及蝕刻裝置 | |
| TWI703414B (zh) | 蝕刻方法 | |
| JP2017098323A (ja) | プラズマエッチング方法 | |
| JP7195113B2 (ja) | 処理方法及び基板処理装置 | |
| JP2015106587A (ja) | 静電チャックのコーティング方法及びプラズマ処理装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190705 |