JP6498022B2 - エッチング処理方法 - Google Patents

エッチング処理方法 Download PDF

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Publication number
JP6498022B2
JP6498022B2 JP2015087900A JP2015087900A JP6498022B2 JP 6498022 B2 JP6498022 B2 JP 6498022B2 JP 2015087900 A JP2015087900 A JP 2015087900A JP 2015087900 A JP2015087900 A JP 2015087900A JP 6498022 B2 JP6498022 B2 JP 6498022B2
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Japan
Prior art keywords
etching
film
lower electrode
single layer
frequency power
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Japanese (ja)
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JP2016207840A (ja
JP2016207840A5 (https=
Inventor
翔 冨永
翔 冨永
航 ▲高▼山
航 ▲高▼山
義樹 五十嵐
義樹 五十嵐
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2015087900A priority Critical patent/JP6498022B2/ja
Priority to US15/131,221 priority patent/US9666446B2/en
Priority to KR1020160047622A priority patent/KR102035890B1/ko
Priority to EP19188564.9A priority patent/EP3621102A1/en
Priority to CN201910508471.6A priority patent/CN110246760B/zh
Priority to CN201610252496.0A priority patent/CN106067418B/zh
Priority to EP16166355.4A priority patent/EP3086359B1/en
Publication of JP2016207840A publication Critical patent/JP2016207840A/ja
Publication of JP2016207840A5 publication Critical patent/JP2016207840A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
  • Plasma Technology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2015087900A 2015-04-22 2015-04-22 エッチング処理方法 Active JP6498022B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2015087900A JP6498022B2 (ja) 2015-04-22 2015-04-22 エッチング処理方法
US15/131,221 US9666446B2 (en) 2015-04-22 2016-04-18 Etching method
KR1020160047622A KR102035890B1 (ko) 2015-04-22 2016-04-19 에칭 처리 방법
CN201910508471.6A CN110246760B (zh) 2015-04-22 2016-04-21 蚀刻方法
EP19188564.9A EP3621102A1 (en) 2015-04-22 2016-04-21 Etching method
CN201610252496.0A CN106067418B (zh) 2015-04-22 2016-04-21 蚀刻处理方法
EP16166355.4A EP3086359B1 (en) 2015-04-22 2016-04-21 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015087900A JP6498022B2 (ja) 2015-04-22 2015-04-22 エッチング処理方法

Publications (3)

Publication Number Publication Date
JP2016207840A JP2016207840A (ja) 2016-12-08
JP2016207840A5 JP2016207840A5 (https=) 2018-07-19
JP6498022B2 true JP6498022B2 (ja) 2019-04-10

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JP2015087900A Active JP6498022B2 (ja) 2015-04-22 2015-04-22 エッチング処理方法

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US (1) US9666446B2 (https=)
EP (2) EP3086359B1 (https=)
JP (1) JP6498022B2 (https=)
KR (1) KR102035890B1 (https=)
CN (2) CN106067418B (https=)

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Also Published As

Publication number Publication date
CN110246760A (zh) 2019-09-17
EP3086359A1 (en) 2016-10-26
US9666446B2 (en) 2017-05-30
JP2016207840A (ja) 2016-12-08
CN110246760B (zh) 2023-02-17
EP3621102A1 (en) 2020-03-11
KR102035890B1 (ko) 2019-10-23
CN106067418A (zh) 2016-11-02
EP3086359B1 (en) 2019-09-11
KR20160125896A (ko) 2016-11-01
US20160314986A1 (en) 2016-10-27
CN106067418B (zh) 2019-07-05

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