CN105359409A - 高线性可变电容器阵列 - Google Patents

高线性可变电容器阵列 Download PDF

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CN105359409A
CN105359409A CN201480030574.1A CN201480030574A CN105359409A CN 105359409 A CN105359409 A CN 105359409A CN 201480030574 A CN201480030574 A CN 201480030574A CN 105359409 A CN105359409 A CN 105359409A
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capacitor
terminal
junior unit
bias voltage
capacitors
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D.V.格普塔
赖志国
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TDK Corp
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Newlans Inc
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Abstract

一种从多个小单元(100-0、100-1、……100-N)构造的高度线性可变电容器阵列(400)。每个小单元包括反平行连接的一对无源的两端子电容器组件。电容器组件可以是金属氧化物半导体MOS电容器。控制电路(410)将偏置电压(411-0、411-1、……411-N)施加到与每个电容器组件关联的偏置电压端子，以由此控制阵列的总体电容。每个小单元中的两个电容器反平行连接，以减少小单元的和阵列的电容的电压系数。MOS电容器优选地操作在反转模式或累积模式下。

Description

高线性可变电容器阵列
技术领域
该专利申请涉及电容器，具体地说，涉及一种从半导体电容器小单元的阵列实现的高度线性可变电容器。
背景技术
电容器是用于存储电场中的能量的两端子无源电组件。电容器可以采取很多不同的物理形式，但通常将包含介质(绝缘体)所分离的至少两个电导体。当穿过导体施加电势差(电压)时，静电场穿过介质发生，使得正电荷聚集在一个导体上而负电荷聚集在另一导体上。能量由此存储在所得静电场中。电容器最一般地由单个恒定值——电容——来表征，电容是每个导体上的电荷对于它们之间的电势差的比率。其它参数(例如品质因数(Q)、频率响应和/或线性)在选择适当电容器设计方面也是重要的。
电容器一般用在很多不同类型的交流(AC)电路中，并且尤其是射频(RF)电路中。电容器与电感器和其它组件组合以实现滤波器、双工器、谐振器、调谐器以及这些电路中的其它功能。在同时尽可能小并且廉价的同时，电子设备(例如智能电话、平板、膝上型计算机等)现在典型地期待使用很多不同的无线电通信协议并且在宽的各种频率上操作。谐振器设计并且因此电容器设计变为实现这些目标的关键方面。
发明内容
问题描述
为了满足很多电子设备的需求，前端滤波器、双工器和相似组件应是可主动地配置的。但作为一个示例，智能电话期待操作的最新近的数字无线协议(例如长期演进(LTE))需要用于选择很多不同操作频率的能力。
这种要求使得难以在过滤掉干扰信号的同时还遵守精确地发送并且接收RF信号所需的线性规范。
用于可配置的滤波器和双工器的其它设计是基于微机电系统(MEMS)技术的。然而，基于MEMS的电路设计典型地展现糟糕的品质因数、糟糕的可靠性以及受限的可调谐性。
例如耦合谐振器的方法遭受大的尺寸和受限的保持性，并且因此对于便携式无线设备中的应用也是不合适的。
因此，混合信号前端保留至少一个领域，其中，替选IC技术(例如砷化镓(GaAs))仍提出对于更常见的硅技术的有吸引力的选项。
优选解决方案的概述
上述问题和其它有关的问题激发本发明，其为高度线性可配置的半导体电容器。
包括两个或更多个电容小单元的电容器阵列提供所述电容器。每个小单元耦合在第一端子和第二端子与控制信号输入中的至少一个之间。每个小单元包括一对无源的两端子电容器组件。可以是金属氧化物半导体(MOS)电容器的每个两端子电容器组件具有阳极和阴极，并且具有进一步受控于输入偏置电压的电容。每个小单元中的所述一对电容器组件通过反平行配置而连接，从而第一电容器的阳极连接到所述第二电容器的阴极，并且所述第二电容器的阳极连接到所述第一电容器的阴极。控制电路接收一个或多个控制输入，并且作用于所述阵列所提供的总体电容的改变。典型地通过作用于对应偏置电压输入的改变来选择用于小单元的多个可能的电容之一而作用于这种改变。
在优选配置中，选择所述偏置电压，从而所述电容器组件操作在响应于两个或更多个预定偏置电压的电容的变化相对很小的范围中。这种变化方面的减少提供对于所施加的RF信号的差异的存在性的更小的易感性。这种布置还允许控制信号成为具有两个状态的数字逻辑信号；控制信号的给定状态选择每个小单元中的偏置电压设置中的对应偏置电压设置。
小单元可以陈设在例如阶梯的等级中，从而控制输入激活用于阵列中的每个元件的一个偏置电平或另一偏置电平。对于阶梯的每个台阶，阶梯中的相邻小单元的电容大小可以增加达预定因子(例如2)。这种布置允许通过将多比特数字控制字应用为输入来选择用于阵列的总电容。
可以在单个半导体封装中制造共享公共控制输入但不同信号输入的多个阵列。
这种配置提供很多优点，包括高品质因数和高线性。
对于电容器阵列的合适应用是可编程滤波器、天线调谐器、网络匹配调谐器、移相器、锁相环、双工器和其它电路功能。
附图说明
以下的详细描述参照附图，其中：
图1A示出具有通过反平行配置连接的并且受控于第一偏置电压V1以提供第一总电容2C1的两个电容器元件的电容器小单元；
图1B示出在第二电压V2处所偏置以提供第二总电容2C2的电容器小单元；
图2示出用于金属氧化物半导体(MOS)电容器的典型电容针对所施加的偏置电压；
图3示出用于图1A和图1B的电容器元件的V1和V2的优选操作电压范围；
图4示出以经由N个输入控制信号控制的数量N个电容器小单元构成的电容器阵列；
图5A和图5B是图4的电容器阵列的电容和品质因数；
图6是包括四个可调整电容器阵列的半导体集成电路(IC)芯片的高级框图；以及
图7是图6的IC的更详细示图。
具体实施方式
简言之，从多个电容小单元构造用于在此所讨论的矢量电容器的优选设计。每个电容小单元耦合在矢量电容器的第一信号端子与第二信号端子之间。每个电容小单元还包括一对无源的两端子电容器组件，其中，每个电容器组件具有阳极端子和阴极端子以及偏置电压输入端子。每个小单元中的一对电容器通过反平行而连接，从而第一电容器的阳极连接到第二电容器的阴极，并且第二电容器的阳极连接到第一电容器的阴极。控制电路将偏置电压施加到偏置电压输入端子，以由此控制阵列的总体电容。
我们现在转向讨论用于电容器阵列的优选配置。我们可以优选地考虑在硅中构造电容器；深亚微米互补金属氧化物半导体(DSM-CMOS)集成电路(IC)技术是一种可能性。在此优选的DSM-CMOS技术实施例可以通过十分小的形状因子提供非常满意的可编程电容结构。
多数MOS电容器设计中出现的典型问题是它们导致非线性。在用于射频信号处理的实际实现方式中，这些电容器将典型地展现随所施加的信号而在量值方面变化的交变交流(AC)效应。为了使得这种效应最小化，根据每个大小C的N个电容器小单元的阵列构造在此优选的矢量电容器结构。凭借通过使用数字的字以选择电容值所提供的可编程性，可以实现大于3：1的电容比率。通过在每个特定范围中操作电容器元件的MOS结合点，也可以减少非线性效应。
图1A示出用于矢量电容器阵列中的示例电容性小单元110的一个布置。提供一对CMOS(互补金属氧化物半导体)电容器结构112-1、112-2。虽然在此未详细示出，但可以通过任何合适的方式在物理上形成每个半导体电容器结构。例如，DSM-CMOS中所制造的电容器结构可以包括导电层，其被部署在栅极氧化物上，进而被部署在基底半导体衬底上。衬底可以具有接触覆盖P衬底区域或N衬底区域的N阱或P阱的一个或多个扩散。所得电容器具有栅极端子(即连接到栅极氧化物上所覆盖的导电层的端子)所提供的阳极；扩散形成阴极(例如源极-漏极)。
构成每个小单元110的两个电容器112-1、112-2通过反平行配置而连接，从而一个电容器的极性给定端子连接到另一电容器的相反极性端子。换言之，第一电容器的阳极连接到第二电容器的阴极，第二电容器的阳极连接到第一电容器的阴极。
通过调整每个小单元的电容(例如通过改变所施加的偏置电压)来控制阵列的总电容。例如，如图1A所示，施加偏置电压V1提供2C1的总电容；如图1B所示，施加偏置电压V2提供2C2的总电容。
更具体地说，取决于所施加的偏置电压Vc，MOS电容器元件提供电容C。图2示出所得电容C针对所施加的偏置电压Vc的示例曲线。设计多数MOS电容器，从而偏置电压Vc处于某范围内，从而半导体结合点操作在提供通常随所施加的电压线性增加的电容的曲线的区域中。然而，在模拟电压Vc在该区域中关于状态化电压V变化的情况下，所得电容C因此也变化。如果电容器阵列将要用在期待电容器接收变化RF信号的应用中，则这可能因不利线性效应而导致问题。
然而，于在此优选的实施例中，我们还有选择地选取用于每个电容器元件110的偏置电压。更具体地说，偏置电压被选择为处于V1或V2的范围中，典型地产生在电容曲线的相反外部范围中，其中，电容随电压的变化相当小。这些外部操作范围被称为用于MOS电容器的反转模式和累积模式。
虽然这限制从每个单个MOS电容器512提供的总体可用电容，但变化的减少在存在RF信号的情况下提供更少的变化。通过对图2中的在V处的输出正弦与图3中的在V1和/或V2处产生的减少幅度的正弦进行比较，这是明显的。
如果反平行电容器配对112-1、112-2的每个元件的电容值相同，则该配对的总电容可以表示如下：
在V1处的总电容CT1＝[C1+ΔC1]+[C1-ΔC1]＝2C1
并且类似地，
在V2处的总电容CT2＝[C2+ΔC2]+[C2-ΔC2]＝2C2
因此，作为图3的偏置曲线的斜率的结果的电容中的任何不同的效应ΔC作为反平行配置的结果而得以抵消。
图4示出阶梯(或其它等级)中所布置的数量(N+1)的这些电容器元件110-0、110-1、……110-N构成的示例阵列400。阶梯中的给定电容器元件110取决于其对应所施加的偏置电压而提供可选择的电容的量。也就是说，偏置电压V1或V2独立于施加到其它元件的偏置电压而施加到每个电容器元件。偏置电压进而取决于N+1个输入控制信号V{0}至V{N}中的对应输入控制信号的值。
输入控制信号是通过控制接口410提供的，并且可以是数字信号411-0、411-1、……、411-N，其选择一个偏置电压V1或另一偏置电压V2，以在给定时间施加到在任何给定时间的任何给定电容器元件。
在阶梯的每个台阶处的电容器的规模与其相邻台阶的不同。例如，取决于其所施加的偏置电压V1或V2，在阶梯的底部处的电容器元件110-0可以是C1或C2。取决于其所施加的偏置电压V1或V2，阶梯的下一电容器元件110-1(从底部向上一个)可以标定为2C1或2C2。阶梯上的下一电容器元件110-2可以随2的幂次级数而选择4C1或4C2，依此类推，从而阶梯中的N+1个电容器元件提供NC1或NC2。
在N＝9的示例实现方式中，电容器元件110-9因此取决于输入的值V{9}提供512C1或512C2的可选择的电容，元件110-8取决于输入的值V{8}提供256C1或256C2的电容，依此类推，下至取决于输入的值V{0}提供1C1或1C2的输出电容的元件110-0。
图5A和图5B示出从被设计为通过10比特的控制输入(例如N＝9并且电容代码范围从0到1023)和所得6.6pF的步长大小提供从2.97pF到9.64pF的可选择的电容的矢量电容器阵列可用的典型电容范围和品质因数。假设1GHz的输入RF信号，对曲线进行建模。
图6示出组合四个不同矢量电容器阵列400的集成电路(IC)610的高级框图。每个阵列配备有其自身的各个RF输入(RFin1、RFin2、RFin3、RFin4)和RF输出(RFout1、RFout2、RFout3、RFout4)。然而，控制输入可以共同馈送到阵列中的每一个。
图7更详细地示出该IC610。在此情况下，在同一芯片衬底上提供四个阵列400-1、400-2、400-3和400-4。施加到一个阵列(例如400-1)中的偏置端子的控制电压与从公共控制接口410施加到其它阵列400-2、400-3和400-4的控制电压相同。
在例如智能电话的应用中，这允许不同的阵列用于实现调谐到不同射频波段的不同滤波器。作为一个示例，这些电容器阵列构造可以与固定电感器配对，以形成可调谐的矢量谐振器，其可以然后级联以形成矢量滤波器。结果可以是高度线性紧凑并且可编程的矢量滤波器。
虽然本发明各个实施例现在已经特定地示出于附图中并且描述于上述文本中，但本领域技术人员应理解，在不脱离本发明的范围的情况下，可以在形式和细节方面在其中进行各种改变。因此，意图本发明仅由所附权利要求限定。

Claims (7)

1.一种可变电容器装置，包括：
第一端子；
第二端子；
多个控制字输入端子，用于接收多个控制输入信号；
多个电容小单元，每个小单元耦合在所述第一端子与所述第二端子之间，每个单元电容小单元包括一对无源的两端子电容器组件，每个电容器组件具有阳极端子和阴极端子以及偏置电压输入端子，所述一对电容器反平行连接，从而第一电容器的阳极连接到第二电容器的阴极，所述第二电容器的阳极连接到所述第一电容器的阴极；以及
控制电路，其耦合到所述控制字输入端子和所述多个偏置电压输入端子，用于根据所述控制输入信号的状态有选择地控制施加到所述电容小单元的偏置电压。
2.如权利要求1所述的装置，其中，所述电容器组件是金属氧化物半导体电容器，所述控制电路提供取决于用于所述半导体电容器中的每一个的两个相应偏置点的偏置电压。
3.如权利要求1所述的装置，其中，所述电容小单元被布置在阶梯中，其中，给定电容器小单元的两个电容值大于所述阶梯中的相邻电容器小单元的两个电容元件。
4.如权利要求3所述的装置，其中，所述阶梯中的每个相邻小单元的电容值增加达2的因子。
5.如权利要求1所述的装置，其中，所述多个电容器阵列形成在公共半导体衬底上。
6.如权利要求5所述的装置，其中，所述多个电容器阵列共享公共控制输入，但被提供单独RF信号输入。
7.如权利要求2所述的装置，其中，所述两个相应偏置点位于用于分别包括反转模式和累积模式的半导体电容器的偏置电压操作范围的相对端处。
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