CN104916315A - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN104916315A CN104916315A CN201410453106.7A CN201410453106A CN104916315A CN 104916315 A CN104916315 A CN 104916315A CN 201410453106 A CN201410453106 A CN 201410453106A CN 104916315 A CN104916315 A CN 104916315A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/061—Improving I/O performance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
- G06F12/0875—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with dedicated cache, e.g. instruction or stack
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0629—Configuration or reconfiguration of storage systems
- G06F3/0634—Configuration or reconfiguration of storage systems by changing the state or mode of one or more devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0656—Data buffering arrangements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1016—Performance improvement
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/21—Employing a record carrier using a specific recording technology
- G06F2212/214—Solid state disk
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/45—Caching of specific data in cache memory
- G06F2212/452—Instruction code
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7207—Details relating to flash memory management management of metadata or control data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
- Memory System Of A Hierarchy Structure (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910032730.2A CN110010172B (zh) | 2014-03-14 | 2014-09-05 | 半导体存储装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014051876A JP2015176309A (ja) | 2014-03-14 | 2014-03-14 | 半導体記憶装置 |
JP2014-051876 | 2014-03-14 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910032730.2A Division CN110010172B (zh) | 2014-03-14 | 2014-09-05 | 半导体存储装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104916315A true CN104916315A (zh) | 2015-09-16 |
CN104916315B CN104916315B (zh) | 2019-02-12 |
Family
ID=54069528
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910032730.2A Active CN110010172B (zh) | 2014-03-14 | 2014-09-05 | 半导体存储装置 |
CN201410453106.7A Active CN104916315B (zh) | 2014-03-14 | 2014-09-05 | 半导体存储装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910032730.2A Active CN110010172B (zh) | 2014-03-14 | 2014-09-05 | 半导体存储装置 |
Country Status (4)
Country | Link |
---|---|
US (6) | US9396775B2 (zh) |
JP (1) | JP2015176309A (zh) |
CN (2) | CN110010172B (zh) |
TW (1) | TWI507976B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107507638A (zh) * | 2016-06-14 | 2017-12-22 | 爱思开海力士有限公司 | 数据存储装置及其操作方法 |
CN107767894A (zh) * | 2016-08-19 | 2018-03-06 | 东芝存储器株式会社 | 半导体存储装置 |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015176309A (ja) | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 半導体記憶装置 |
US10096366B2 (en) | 2016-01-28 | 2018-10-09 | Toshiba Memory Corporation | Memory system including multi-plane flash memory and controller |
JP2017224370A (ja) | 2016-06-15 | 2017-12-21 | 東芝メモリ株式会社 | 半導体記憶装置及びメモリシステム |
JP2018041154A (ja) * | 2016-09-05 | 2018-03-15 | 東芝メモリ株式会社 | ストレージシステムおよび処理方法 |
JP6753746B2 (ja) * | 2016-09-15 | 2020-09-09 | キオクシア株式会社 | 半導体記憶装置 |
JP6797727B2 (ja) * | 2017-03-21 | 2020-12-09 | キオクシア株式会社 | 半導体記憶装置 |
KR102447465B1 (ko) * | 2017-09-08 | 2022-09-27 | 삼성전자주식회사 | 호스트로부터의 읽기 요청에 대한 짧은 읽기 응답 시간을 제공하기 위해 내부 동작을 일시적으로 중단하는 스토리지 장치 |
US10534731B2 (en) * | 2018-03-19 | 2020-01-14 | Micron Technology, Inc. | Interface for memory having a cache and multiple independent arrays |
KR102532563B1 (ko) * | 2018-03-28 | 2023-05-17 | 에스케이하이닉스 주식회사 | 메모리 장치 및 그것의 동작방법 |
JP2020042889A (ja) * | 2018-09-13 | 2020-03-19 | キオクシア株式会社 | 半導体記憶装置 |
KR102670866B1 (ko) * | 2018-11-28 | 2024-05-30 | 삼성전자주식회사 | 복수의 메모리 플레인들을 포함하는 비휘발성 메모리 장치 및 이를 포함하는 메모리 시스템 |
US11657858B2 (en) | 2018-11-28 | 2023-05-23 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices including memory planes and memory systems including the same |
JP2020091930A (ja) | 2018-12-07 | 2020-06-11 | キオクシア株式会社 | 半導体記憶装置 |
JP2020102282A (ja) * | 2018-12-20 | 2020-07-02 | キオクシア株式会社 | 半導体記憶装置 |
JP7163210B2 (ja) | 2019-02-13 | 2022-10-31 | キオクシア株式会社 | 半導体記憶装置、メモリシステム及び不良検出方法 |
JP2020140747A (ja) | 2019-02-27 | 2020-09-03 | キオクシア株式会社 | 半導体記憶装置 |
JP2020144961A (ja) | 2019-03-07 | 2020-09-10 | キオクシア株式会社 | 半導体記憶装置 |
JP2020149745A (ja) | 2019-03-13 | 2020-09-17 | キオクシア株式会社 | 半導体記憶装置 |
JP2020149744A (ja) | 2019-03-13 | 2020-09-17 | キオクシア株式会社 | 半導体記憶装置 |
US11048440B2 (en) * | 2019-03-14 | 2021-06-29 | SK Hynix Inc. | Memory system, memory device and operating method thereof |
JP7258697B2 (ja) | 2019-09-02 | 2023-04-17 | キオクシア株式会社 | 半導体記憶装置 |
JP2021039807A (ja) | 2019-09-03 | 2021-03-11 | キオクシア株式会社 | 半導体記憶装置 |
JP2021039809A (ja) | 2019-09-04 | 2021-03-11 | キオクシア株式会社 | 半導体記憶装置 |
JP2021047960A (ja) | 2019-09-19 | 2021-03-25 | キオクシア株式会社 | 半導体記憶装置 |
JP7282665B2 (ja) | 2019-12-19 | 2023-05-29 | キオクシア株式会社 | 半導体記憶装置 |
US10997941B1 (en) * | 2020-02-12 | 2021-05-04 | Himax Technologies Limited | ESL driver mechanism capable of determining whether all ESL drivers are busy or idle without further querying or polling all ESL drivers |
KR20210152706A (ko) * | 2020-06-09 | 2021-12-16 | 에스케이하이닉스 주식회사 | 메모리 장치, 메모리 시스템 및 메모리 장치의 동작 방법 |
JP2022010951A (ja) | 2020-06-29 | 2022-01-17 | キオクシア株式会社 | 半導体記憶装置 |
JP2022144754A (ja) * | 2021-03-19 | 2022-10-03 | キオクシア株式会社 | 半導体記憶装置 |
JP2022154323A (ja) | 2021-03-30 | 2022-10-13 | キオクシア株式会社 | 半導体記憶装置 |
TW202322321A (zh) | 2021-07-21 | 2023-06-01 | 日商鎧俠股份有限公司 | 半導體記憶裝置 |
JP2023035640A (ja) | 2021-09-01 | 2023-03-13 | キオクシア株式会社 | メモリシステム |
KR102481649B1 (ko) * | 2021-12-01 | 2022-12-28 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 제어하는 제어기, 그것을 포함하는 저장 장치 및 그것의 동작 방법 |
US12002505B2 (en) * | 2021-12-30 | 2024-06-04 | Micron Technology, Inc. | Managing memory based on access duration |
US11977752B2 (en) | 2022-02-24 | 2024-05-07 | Silicon Motion, Inc. | Flash memory controller and method capable of sending data toggle set-feature signal to enable, disable, or configure data toggle operation of flash memory device |
JP2023122783A (ja) | 2022-02-24 | 2023-09-05 | キオクシア株式会社 | 半導体記憶装置 |
US11972146B2 (en) * | 2022-02-24 | 2024-04-30 | Silicon Motion, Inc. | Flash memory controller and method capable of sending read command or data toggle command to ask for flash memory device return more plane data of different planes |
US11935595B2 (en) | 2022-02-24 | 2024-03-19 | Silicon Motion, Inc. | Flash memory device, controller, and method capable of performing access operation upon data unit(s) of multiple planes of flash memory device in response one simplified command sequence |
US11861212B2 (en) | 2022-02-24 | 2024-01-02 | Silicon Motion, Inc. | Flash memory device, controller, and method capable of performing access operation upon data unit(s) of multiple planes of flash memory device in response one simplified command sequence |
US11977776B2 (en) | 2022-02-24 | 2024-05-07 | Silicon Motion, Inc. | Flash memory controller and method capable of sending read command or data toggle command to ask for flash memory device return more plane data of different planes |
JP2023127385A (ja) | 2022-03-01 | 2023-09-13 | キオクシア株式会社 | メモリシステム |
US11989458B2 (en) * | 2022-09-12 | 2024-05-21 | Western Digital Technologies, Inc. | Splitting sequential read commands |
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CN103137203A (zh) * | 2011-11-21 | 2013-06-05 | 三星电子株式会社 | 非易失性存储装置、存储系统和控制器操作方法 |
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2014
- 2014-03-14 JP JP2014051876A patent/JP2015176309A/ja active Pending
- 2014-07-07 TW TW103123366A patent/TWI507976B/zh active
- 2014-09-02 US US14/475,493 patent/US9396775B2/en active Active
- 2014-09-05 CN CN201910032730.2A patent/CN110010172B/zh active Active
- 2014-09-05 CN CN201410453106.7A patent/CN104916315B/zh active Active
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2016
- 2016-06-16 US US15/184,677 patent/US10120584B2/en active Active
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2018
- 2018-09-28 US US16/147,223 patent/US10698611B2/en active Active
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2020
- 2020-05-26 US US16/883,560 patent/US11226742B2/en active Active
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2021
- 2021-11-16 US US17/527,851 patent/US11740794B2/en active Active
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2023
- 2023-07-06 US US18/348,061 patent/US20230350571A1/en active Pending
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CN1507060A (zh) * | 2002-12-10 | 2004-06-23 | ��ʽ���������Ƽ� | 半导体存储装置 |
US20100241877A1 (en) * | 2009-03-17 | 2010-09-23 | Samsung Electronics Co., Ltd. | Ic card with parallel accessed memory blocks |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107507638A (zh) * | 2016-06-14 | 2017-12-22 | 爱思开海力士有限公司 | 数据存储装置及其操作方法 |
CN107767894A (zh) * | 2016-08-19 | 2018-03-06 | 东芝存储器株式会社 | 半导体存储装置 |
CN107767894B (zh) * | 2016-08-19 | 2021-05-28 | 东芝存储器株式会社 | 半导体存储装置 |
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US11740794B2 (en) | 2023-08-29 |
JP2015176309A (ja) | 2015-10-05 |
US20230350571A1 (en) | 2023-11-02 |
CN110010172B (zh) | 2024-01-26 |
US10698611B2 (en) | 2020-06-30 |
US10120584B2 (en) | 2018-11-06 |
US20220075521A1 (en) | 2022-03-10 |
TW201535252A (zh) | 2015-09-16 |
US11226742B2 (en) | 2022-01-18 |
CN110010172A (zh) | 2019-07-12 |
US20150262630A1 (en) | 2015-09-17 |
US9396775B2 (en) | 2016-07-19 |
TWI507976B (zh) | 2015-11-11 |
US20190034081A1 (en) | 2019-01-31 |
US20200285388A1 (en) | 2020-09-10 |
CN104916315B (zh) | 2019-02-12 |
US20160299692A1 (en) | 2016-10-13 |
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