CN104851851B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN104851851B
CN104851851B CN201510072112.2A CN201510072112A CN104851851B CN 104851851 B CN104851851 B CN 104851851B CN 201510072112 A CN201510072112 A CN 201510072112A CN 104851851 B CN104851851 B CN 104851851B
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concave
semiconductor device
semiconductor chip
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chip
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CN104851851A (zh
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竹泽真
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Seiko Instruments Inc
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Ablic Inc
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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Abstract

半导体装置及其制造方法。本发明提供防潮性良好的半导体装置。通过在由密封树脂(8)覆盖的半导体芯片(2)的上侧面形成具有大的凹凸的区域(25)，并在下侧面形成具有小的凹凸的区域(24)，使半导体芯片(2)和密封树脂(8)的紧密贴合力提高，防止来自外部的水分的浸入。

Description

半导体装置及其制造方法
技术领域
本发明涉及半导体装置的制造方法，特别是涉及能够抑制在半导体芯片和模塑树脂之间发生层间剥离的半导体外壳的制造方法。
背景技术
关于近年来的包围半导体装置的环境，特别是在车载领域正在推进电子化，将电子部件搭载于发动机室等的情况增多，根据市场，要求在更高的温度且多湿的环境下的动作保障。用于进行动作保障的试验方法具体在公共组织中有所规定。例如，在作为代表性的标准的IPC/JEDEC的J-STD-020D“Moisture/Reflow Sensitivity Classification forNonhermetic Solid State Surface Mount Devices(针对非密封的固态表面安装装置的湿度/回流敏感度的分类)”的Moisture Sensitivity Level(潮湿敏感度)(以下MSL)中，存在关于保管温度和湿度的条件、开封后的处置时间、以及可靠性试验的条件的规定。
为了应对这样的试验，特别是必须抑制半导体外壳的内部中的各紧密贴合界面处的层间剥离，至今为止公开了各种结构和制造方法。
作为一个例子，公开了如下可靠性高的树脂密封型半导体装置：在引线框的表面使被称为PPF(Pre-Plated Frame：预镀框架)的由Pd/Ni/Au等构成的镀层的表面凹凸化，提高了与模塑树脂的紧密贴合性。(例如，参照专利文献1)
另外，公开了如下的树脂密封型半导体装置：作为层间剥离的原因，存在因各构成材料的热膨胀系数差而引起的热应力的影响，为了抑制这一原因而调整模塑树脂的热膨胀系数和弯曲弹性，从而半导体外壳内部的热应力小，外壳的可靠性高。(例如，参照专利文献2)
专利文献1：日本特开2005-223305号公报
专利文献2：日本特开2001-223304号公报
然而，即使使用了这些技术，也无法完全抑制半导体外壳的层间剥离。这是因为，作为半导体外壳的主要构成材料的引线框、模塑树脂、半导体芯片各自的材料互不相同，因此会伴随着产生热膨胀系数的差。并且，由于各材料的加工方法的差异而使得表面状态也不同，因此内部的紧密贴合力和应力处于不均匀的状态。因此，即使提高特定部位的紧密贴合性或使模塑树脂低应力化，如果不使内部紧密贴合力相对均匀化，则结果也会是应力向紧密贴合力弱的部分集中，从该部位引发层间剥离。虽然在不断改善半导体芯片的保护膜表面与密封树脂的紧密贴合性、和引线框与密封树脂的紧密贴合性，但仍局部地存在紧密贴合性弱的部分。
图4中示出了用于说明半导体芯片的侧面处的层间剥离的图。如图4的(a)所示，半导体芯片2借助银膏等粘接剂18安装于在表面上形成有粗糙面15的芯片座3上。半导体芯片2的上表面被由聚酰亚胺膜等形成的保护膜17覆盖，芯片座3、半导体芯片2被密封树脂8密封。图4的(b)是将半导体芯片2的侧面放大的图。在半导体芯片2的侧面存在被称为层间剥离的剥离部19，密封树脂8和半导体芯片2并未紧密贴合，存在防潮性低的问题。
发明内容
本发明提供一种用于解决上述课题的半导体装置及其制造方法。
为了解决上述课题，采用了以下手段。
首先，形成了一种半导体装置，其具备：半导体芯片；芯片座，该芯片座支承所述半导体芯片；粘接剂，该粘接剂将所述半导体芯片和所述芯片座粘接在一起；多根信号用引线，该多根信号用引线朝向所述芯片座的边延伸；接合线，该接合线连接所述半导体芯片和所述信号用引线；以及密封体，该密封体利用模塑树脂进行密封，所述半导体装置的特征在于，所述半导体芯片的侧面由第一凹凸侧面和在所述第一凹凸侧面的上方形成的第二凹凸侧面构成，所述第二凹凸侧面中的第二凹凸比所述第一凹凸侧面中的第一凹凸大。。
另外，半导体装置的特征在于，所述第二凹凸侧面占所述半导体芯片的厚度的2/3以上。
另外，使用了一种半导体装置的制造方法，所述半导体装置具备：半导体芯片；芯片座，该芯片座支承所述半导体芯片；粘接剂，该粘接剂将所述半导体芯片和所述芯片座粘接在一起；多根信号用引线，该多根信号用引线朝向所述芯片座的边延伸；接合线，该接合线连接所述半导体芯片和所述信号用引线；以及密封体，该密封体利用模塑树脂进行密封，其中，所述半导体装置的制造方法具备：在所述半导体芯片的侧面形成第一凹凸侧面的工序；和在所述半导体芯片的侧面形成第二凹凸侧面的工序。
另外，使用了一种半导体装置的制造方法，其特征在于，形成所述第二凹凸侧面的工序是利用脉冲激光在所述半导体芯片内形成连续的改性层的工序。
另外，使用了一种半导体装置的制造方法，其特征在于，形成所述第二凹凸侧面的工序是使用烧蚀激光的工序。
另外，使用了一种半导体装置的制造方法，其特征在于，形成所述第一凹凸侧面的工序是利用脉冲激光在所述半导体芯片内形成分离的改性层的工序。
另外，使用了一种半导体装置的制造方法，其特征在于，形成所述第二凹凸侧面的工序是刀具切割工序，切割刀具的网眼尺寸在#1000以下。
另外，使用了一种半导体装置的制造方法，其特征在于，在所述刀具切割工序之后进行各向同性等离子硅蚀刻。
另外，使用了一种半导体装置的制造方法，其特征在于，形成所述第二凹凸侧面的工序是等离子切割工序，并且是BOSCH工艺的硅蚀刻。
通过使用上述手段，能够提高半导体芯片和密封树脂的紧密贴合性，从而可以得到防潮性良好的半导体装置。
附图说明
图1是示出本发明的半导体装置的第1实施方式的剖视图。
图2是本发明的半导体装置的俯视图。
图3是示出本发明的半导体装置的制造方法的工序流程图。
图4是以往的半导体装置的剖视图。
图5是示出本发明的半导体装置的制造方法的图。
图6是示出本发明的半导体装置的制造方法的图。
标号说明
1：半导体装置；
2：半导体芯片；
3：芯片座；
4：引线；
5：悬吊引线；
5a：悬吊引线基部；
5b：悬吊引线外部；
6：引线；
6a：引线内部；
6b：引线外部；
7：接合线；
8：密封树脂；
9：脉冲激光；
10：改性层；
11：改性层；
12：划分线；
13：聚光透镜；
14：切割带；
15：粗糙面；
16：切割刀具；
17：保护膜；
18：粘接剂；
19：剥离部；
24：第一凹凸侧面；
25：第二凹凸侧面；
S1：切割工序；
S2：芯片焊接工序；
S3：芯片焊接固化工序；
S4：接线工序；
S5：组装检查工序；
S6：树脂密封工序；
S7：改性工序。
具体实施方式
使用附图对本发明的半导体装置及其制造方法进行说明。
图1是本发明的半导体装置的局部剖视图。如图1的(a)所示，半导体芯片2借助银膏等粘接剂18安装于在上表面形成有粗糙面15的芯片座3上。半导体芯片2的上表面被由聚酰亚胺膜等构成的保护膜17覆盖，芯片座3、半导体芯片2被密封树脂8密封。图1的(b)是将半导体芯片2的侧面放大的图。在半导体芯片2的侧面下部形成有由小的凹凸构成的第一凹凸侧面24(第一凹凸没有图示)，在侧面上部形成有配置了比侧面下部的凹凸大的凹凸的第二凹凸侧面25。通过形成这样的结构，提高了形成有半导体元件的半导体芯片的侧面上部与密封树脂8的紧密贴合力，抑制了水分的浸入，能够形成防潮性良好的半导体装置。另外，这里所谓的凹凸较大或较小的描述是指所形成的凹凸的从凹部的底至凸部的顶点的长度较大或较小。
另外，通过在半导体芯片2的侧面下部设置第一凹凸侧面24，芯片焊接时的粘接剂18的附着性变得良好，即使是小型的半导体芯片，也提高了与芯片座3的紧密贴合性。
图2是示出本发明的半导体装置的结构的俯视图。树脂密封型的半导体装置1具备：半导体芯片2、固定半导体芯片2的芯片座3、和向芯片座3的两侧延伸的引线4。半导体芯片2是例如由半导体衬底和设在半导体衬底上的配线层等构成的结构，半导体芯片2被粘接固定于芯片座3。芯片座3及引线4具有导电性，例如由Fe-Ni合金、Cu合金等金属形成。在芯片座的周围存在多根引线4，在芯片座3的一边侧配置有2根，在对置的另一边侧配置有2根，合计配置有4根。而且，这些引线4中的1根引线是悬吊引线5，悬吊引线5的基部5a固定于芯片座3。其他3根是从芯片座3隔开的引线6，其内部6a经由具有导电性的接合线7与半导体芯片2电连接。对于接合线7，使用金线或铜线。这样构成的半导体芯片2、芯片座3及引线6的内部6a形成为如下结构：被由树脂形成的密封树脂8密封，保护半导体芯片2免受来自外部的冲击等，并且在电绝缘的同时能够经由多根引线4将半导体芯片2和外部电连接。作为密封树脂8，例如可以使用苯酚类硬化剂、硅胶或添加了填料等的联苯类的绝缘树脂。
接下来，使用图3，对本发明的半导体装置的制造方法进行说明。
首先，对图中示出的工序S1～S6进行说明。切割工序S1是将半导体晶片分割成半导体芯片的工序。芯片焊接工序S2是使用银膏等将半导体芯片粘接到引线框的芯片座区域的工序。接下来的芯片焊接固化工序S3是对被粘接在一起的芯片座和半导体芯片进行加热以使接合部硬化的工序。接下来的接线工序S4利用在热压接中并用了超音波振动的焊接法等将接合线与半导体芯片表面的电极部分及引线内部连接起来的工序。然后，在组装检查工序S5中，对芯片座与半导体芯片的接合状态、半导体芯片与接合线的接合状态进行检查，并转移至树脂密封工序S6。
在树脂密封工序S6中，首先，对应于各芯片座准备模具，该模具具备：型腔，该型腔是包围芯片座和半导体芯片的空间；流道，该流道使注入的密封树脂流入至各型腔的附近；以及浇口，该浇口用于连通流道和型腔。然后，利用模具将引线框夹入，向各模具注入并填充密封树脂，然后，从模具中取出被密封的引线框。此时，在引线之间等形成薄的树脂溢料。这是在将树脂填充至模具的型腔时从微小的间隙漏出的树脂所形成的，所述树脂溢料依赖于模具，且对应于每个模具以不同的位置、形状形成。
以3种方法为例，对切割工序S1详细说明。
首先，图3的(a)是采用了激光切割工序的制造方法。如图5所示，这里，经由聚光透镜13向设在半导体芯片2与相邻的半导体芯片2之间的划分线12照射脉冲激光9，所述半导体芯片形成在粘贴于切割带14的半导体衬底上。在深度方向上多级地照射脉冲激光，在进行了激光照射的区域形成改性层10。在半导体芯片2的厚度方向的上部2/3，以高输出密集地照射脉冲激光，以使在深度方向上形成的改性层10在平面上连续地连接。这相当于图3的(a)的激光切割工序1，是形成图1的(b)的第二凹凸侧面25的工序。激光切割工序2是在半导体芯片的厚度方向的下部1/3形成第一凹凸侧面24的工序，通过低输出的脉冲激光在深度方向上形成的改性层11以分开的方式形成，各个改性层11的尺寸也比在激光切割工序1中形成的改性层10的尺寸小。经过激光切割工序1和2后，将半导体晶片切开，得到了具有第一凹凸侧面24和第二凹凸侧面25的半导体芯片2。
如果第二凹凸侧面25的厚度相对于半导体芯片2的厚度足够厚，则不必进行激光切割工序2，可以在激光切割工序1之后将半导体晶片切开。通过该制造方法，会在第二凹凸侧面25上形成与前述例子相同尺寸的凹凸，但第一凹凸侧面24由于是切开面而形成有极小的凹凸。
以上，对从半导体芯片的元件形成面即上表面照射脉冲激光的例子进行了说明，但也可以从避开了形成于划分线的TEG的半导体芯片的背面进行照射。
使用烧蚀激光法代替脉冲激光法也能够实现第二凹凸侧面25。在该情况下，在激光切割工序1中使用烧蚀激光，但与脉冲激光法相比较，能够形成大的凹凸。经过了在激光切割工序2中使用低输出的脉冲激光然后将半导体晶片切开的工序，可以得到半导体芯片。
接下来，图3的(b)是采用了刀具切割工序的制造方法。如图6的(a)、(b)所示，这里是使切割刀具16沿着设在半导体芯片2与相邻的半导体芯片2之间的划分线12走刀而将半导体晶片切断成一个个半导体芯片的方法，所述半导体芯片2形成在粘贴于切割带14的半导体衬底上。这里，使用粒度不同的2种切割刀具，在刀具切割工序1中，利用网眼在#1000以下的粗糙度的刀具从半导体芯片表面进行半切，形成第二凹凸侧面25。接下来，在刀具切割工序2中，使用网眼在#2000以上的刀具进行切断，来形成第一凹凸侧面24，从而得到具有第一凹凸侧面24和第二凹凸侧面25的半导体芯片2。在该制造方法中，通过追加各向同性的等离子硅蚀刻这样的改性工序S7，能够除去切断面的损伤层，从而能够形成防潮性更高的半导体装置。
图3的(c)是采用了等离子切割工序的制造方法。在等离子切割工序1中，通过重复进行各向同性蚀刻和保护膜的堆积的BOSCH工艺(德国博世公司开发的一种采用Deep RIE的深蚀刻工艺)进行硅蚀刻，来形成第二凹凸侧面25。在BOSCH工艺中，在半导体芯片侧面形成被称为弧形切削残余(Scallop)的连续的凹凸。接下来，在等离子切割工序2中进行剩余的硅蚀刻，将半导体晶片切断成一个个半导体芯片。这里不是采用BOSCH工艺，而是采用通过各向异性蚀刻进行深挖的方法。通过经过这样的等离子切割工序1和2，可以得到具有第一凹凸侧面24和第二凹凸侧面25的半导体芯片2。

Claims (9)

1.一种半导体装置，其具备：半导体芯片；芯片座，该芯片座支承所述半导体芯片；粘接剂，该粘接剂将所述半导体芯片和所述芯片座粘接在一起；多根信号用引线，该多根信号用引线朝向所述芯片座的边延伸；以及密封体，该密封体利用模塑树脂进行密封，所述半导体装置的特征在于，
所述半导体芯片的侧面由第一凹凸侧面和在所述第一凹凸侧面的上方形成的第二凹凸侧面构成，
所述第二凹凸侧面中的第二凹凸比所述第一凹凸侧面中的第一凹凸大，
所述第一凹凸侧面与所述第二凹凸侧面在所述半导体芯片的厚度方向上沿着同一平面形成。
2.根据权利要求1所述的半导体装置，其特征在于，
所述第二凹凸侧面占所述半导体芯片的厚度的2/3以上。
3.一种半导体装置的制造方法，所述半导体装置具备：半导体芯片；芯片座，该芯片座支承所述半导体芯片；粘接剂，该粘接剂将所述半导体芯片和所述芯片座粘接在一起；多根信号用引线，该多根信号用引线朝向所述芯片座的边延伸；以及密封体，该密封体利用模塑树脂进行密封，所述半导体装置的制造方法的特征在于，
所述半导体装置的制造方法具备：
在所述半导体芯片的侧面形成第一凹凸侧面的工序；和
在所述半导体芯片的侧面形成与所述第一凹凸侧面不同的第二凹凸侧面的工序。
4.根据权利要求3所述的半导体装置的制造方法，其特征在于，
形成所述第二凹凸侧面的工序是利用脉冲激光在所述半导体芯片内形成连续的改性层的工序。
5.根据权利要求3所述的半导体装置的制造方法，其特征在于，
形成所述第二凹凸侧面的工序是使用烧蚀激光的工序。
6.根据权利要求3所述的半导体装置的制造方法，其特征在于，
形成所述第一凹凸侧面的工序是利用脉冲激光在所述半导体芯片内形成分离的改性层的工序。
7.根据权利要求3所述的半导体装置的制造方法，其特征在于，
形成所述第二凹凸侧面的工序是等离子切割工序，并且是BOSCH工艺的硅蚀刻。
8.根据权利要求3所述的半导体装置的制造方法，其特征在于，
形成所述第二凹凸侧面的工序是刀具切割工序，切割刀具的网眼尺寸在#1000以下。
9.根据权利要求8所述的半导体装置的制造方法，其特征在于，
在所述刀具切割工序之后进行各向同性等离子硅蚀刻。
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