CN110071071A - 半导体装置、以及半导体装置的制造方法 - Google Patents
半导体装置、以及半导体装置的制造方法 Download PDFInfo
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- CN110071071A CN110071071A CN201910049451.7A CN201910049451A CN110071071A CN 110071071 A CN110071071 A CN 110071071A CN 201910049451 A CN201910049451 A CN 201910049451A CN 110071071 A CN110071071 A CN 110071071A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 133
- 229920005989 resin Polymers 0.000 claims abstract description 133
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 4
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- 238000009413 insulation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
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- 230000001083 documented effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
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- 230000001771 impaired effect Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- -1 object Chemical compound 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
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Abstract
本申请说明书所公开的技术的目的在于提供用于在不降低树脂的机械强度的状态下,削减制造成本,而且提高散热性的技术。本申请说明书所公开的技术涉及的半导体装置具备:绝缘基板(12);半导体元件(14),其配置于绝缘基板的上表面;壳体(16),其以将半导体元件收容于内侧的方式与绝缘基板连接;以及树脂(20),其以将半导体元件埋入的方式填充在壳体的内侧,在壳体的内侧的树脂的上表面形成第1凹部(200),第1凹部形成于在俯视观察时包含半导体元件整体的位置。
Description
技术领域
本申请说明书所公开的技术涉及例如电力用半导体装置。
背景技术
当前的功率模块有时通过直接灌封树脂(以下,称为DP树脂)进行封装,但在这种情况下,需要使DP树脂封装至内部电极的最上表面为止(例如,参照专利文献1)。
另外,当前的功率模块有时也出于降低应力的目的,部分地注入封装树脂(例如,参照专利文献2)。
专利文献1:日本特开2016-58563号公报
专利文献2:日本特开昭64-18247号公报
专利文献1示出的电力半导体装置需要使DP树脂封装至内部电极的最上表面为止,因此存在树脂填充至多余的区域,制造成本增大的课题。
另一方面,在如专利文献2所示地削减半导体元件周边的树脂的情况下,由于半导体元件之上的树脂厚,因此存在下述课题,即,从半导体元件向树脂表面的热的传导变差,其结果,散热性变差。另外,由于以将半导体元件包围的方式形成槽,因此存在下述课题,即,树脂形状变形、凸起部的树脂的机械强度降低。
发明内容
本申请说明书所公开的技术就是为了解决上述所记载的问题而提出的,其目的在于提供用于在不降低树脂的机械强度的状态下,削减制造成本,而且提高散热性的技术。
本申请说明书所公开的技术的第1方式具备:绝缘基板;半导体元件,其配置于所述绝缘基板的上表面;壳体,其以将所述半导体元件收容于内侧的方式与所述绝缘基板连接;以及树脂,其以将所述半导体元件埋入的方式填充在所述壳体的内侧,在所述壳体的内侧的所述树脂的上表面形成第1凹部,所述第1凹部形成于在俯视观察时包含所述半导体元件整体的位置。
本申请说明书所公开的技术的第2方式是,以将在绝缘基板的上表面配置的半导体元件埋入的方式将树脂填充在对所述半导体元件进行收容的壳体的内侧,在所填充的所述树脂的上表面配置所述树脂的金属模具,对配置了所述金属模具的状态下的所述树脂,进行热硬化处理,在所述热硬化处理之后,将所述金属模具拆下,在所述树脂的上表面形成第1凹部,所述第1凹部形成于在俯视观察时包含所述半导体元件整体的位置。
发明的效果
本申请说明书所公开的技术的第1方案具备:绝缘基板;半导体元件,其配置于所述绝缘基板的上表面;壳体,其以将所述半导体元件收容于内侧的方式与所述绝缘基板连接;以及树脂,其以将所述半导体元件埋入的方式填充在所述壳体的内侧,在所述壳体的内侧的所述树脂的上表面形成第1凹部,所述第1凹部形成于在俯视观察时包含所述半导体元件整体的位置。根据这样的结构,能够将半导体元件与树脂的上表面之间的距离缩短,因此能够在半导体元件发热时,使热量高效地传导至树脂的上表面,提高该热量的向外部空气的散热性。另外,由于在半导体元件的上方形成第1凹部,不形成树脂的凸起部等,因此不会降低树脂的机械强度,能够削减制造成本。
本申请说明书所公开的技术的第2方案是,以将在绝缘基板的上表面配置的半导体元件埋入的方式将树脂填充在对所述半导体元件进行收容的壳体的内侧,在所填充的所述树脂的上表面配置所述树脂的金属模具,对配置了所述金属模具的状态下的所述树脂,进行热硬化处理,在所述热硬化处理之后,将所述金属模具拆下,在所述树脂的上表面形成第1凹部,所述第1凹部形成于在俯视观察时包含所述半导体元件整体的位置。根据这样的结构,能够将半导体元件与树脂的上表面之间的距离缩短,因此能够在半导体元件发热时,使热量高效地传导至树脂的上表面,提高该热量的向外部空气的散热性。另外,由于在半导体元件的上方形成第1凹部,不形成树脂的凸起部等,因此不会降低树脂的机械强度,能够削减制造成本。
本申请说明书所公开的技术涉及的目的、特征、方案以及优点通过以下示出的详细说明和附图变得更清楚。
附图说明
图1是概略地表示实施方式涉及的半导体装置的结构的例子的剖面图。
图2是概略地表示实施方式涉及的半导体装置的结构的例子的剖面图。
图3是表示图2所例示的实施方式涉及的半导体装置的结构的俯视图。
图4是概略地表示实施方式涉及的半导体装置的结构的例子的剖面图。
标号的说明
12绝缘基板,12A绝缘板,12B、12C、12D电极图案,14半导体元件,16壳体,16A、16B电极,18粘接剂,20、20A、20B DP树脂,24A、24B、26配线,200、200A、200B、201A、201B凹部。
具体实施方式
下面,一边参照附图一边对实施方式进行说明。
此外,附图是概略地示出的,为了便于说明,适当地进行结构的省略,或者结构的简化。另外,在不同的附图分别示出的结构等的大小以及位置的相互关系并不一定是准确地记载的,而是能够适当变更。
另外,在以下所示的说明中,对同样的结构要素标注相同的标号而进行图示,它们的名称和功能也是同样的。因此,为了避免重复有时会省略关于它们的详细的说明。
另外,在以下所记载的说明中,即使有时会使用“上”、“下”、“左”、“右”、“侧”、“底”、“表”或者“背”等表示特定的位置和方向的术语,这些术语是为了方便起见而使用的,用以使实施方式的内容易于理解,与实际实施时的方向没有关系。
另外,在以下所记载的说明中,即使存在使用“第1”或者“第2”等序数的情况,这些术语是为了方便起见而使用的,用以使实施方式的内容易于理解,并不限于由这些序数而可能产生的顺序等。
<第1实施方式>
下面,对本实施方式涉及的半导体装置、以及半导体装置的制造方法进行说明。
<关于半导体装置的结构>
图1是概略地表示本实施方式涉及的半导体装置的结构的例子的剖面图。如图1所例示的这样,半导体装置具备:绝缘基板12;半导体元件14,其经由焊料22配置于绝缘基板12的上表面;壳体16,其以将半导体元件14收容于内侧的方式经由粘接剂18与绝缘基板12连接;以及DP树脂20,其在壳体16的内侧以将半导体元件14埋入的方式填充。
绝缘基板12具备:绝缘板12A;电极图案12B以及电极图案12D,它们设置于绝缘板12A的上表面;以及电极图案12C,其设置于绝缘板12A的下表面。另外,壳体16在对半导体元件14进行收容的内侧的面形成电极16A以及电极16B。
绝缘基板12的电极图案12B与壳体16的电极16A经由配线24A电连接。另外,绝缘基板12的电极图案12D与壳体16的电极16B经由配线24B电连接。另外,半导体元件14与电极图案12D经由配线26电连接。配线26、配线24A以及配线24B一起被埋入至DP树脂20。
如图1所例示的这样,DP树脂20的最上表面与配线24A、配线24B以及配线26相比位于上方。并且,在DP树脂20的最上表面形成有凹部200。凹部200位于半导体元件14的上方,因此,与半导体元件14的上表面相对的DP树脂20的厚度相比于未形成凹部200的情况而形成得薄。另外,DP树脂20的与壳体16接近的部分的最上表面高于DP树脂20的半导体元件14的上表面处的最上表面、即形成凹部200的上表面。此外,凹部200形成于在俯视观察时包含半导体元件14整体的位置。即,半导体元件14在俯视观察时位于凹部200的内侧。
根据这样的结构,与半导体元件14的上表面相对的DP树脂20的厚度相比于未形成凹部200的情况而形成得薄。因此,通过形成凹部200,从而能够将半导体元件14与DP树脂20的最上表面之间的距离缩短,因此能够促进DP树脂20的最上表面的温度上升,而且能够提高将半导体元件14的热向外部空气散热的性能。
另外,由于半导体元件14的上表面处的DP树脂20的量减少,因此能够降低制造成本。另外,由于DP树脂20的形状没有变形,即,不形成DP树脂20的凸起部等,因此不会使机械强度受损。
<第2实施方式>
对本实施方式涉及的半导体装置、以及半导体装置的制造方法进行说明。在以下的说明中,对与上述所记载的实施方式中说明的结构要素相同的结构要素标注相同的标号而图示,适当地省略其详细说明。
<关于半导体装置的结构>
图2是概略地表示本实施方式涉及的半导体装置的结构的例子的剖面图。如图2所例示的这样,半导体装置具备绝缘基板12、半导体元件14、壳体16、DP树脂20A。图3是表示图2所例示的本实施方式涉及的半导体装置的结构的俯视图。
如图2以及图3所例示的这样,在DP树脂20A的最上表面形成有凹部200A以及凹部201A。
由于凹部200A位于半导体元件14的上方,因此与半导体元件14的上表面相对的DP树脂20A的厚度相比于未形成凹部200A的情况而形成得薄。此外,凹部200A形成于在俯视观察时包含半导体元件14整体的位置。
凹部201A是在凹部200A的底面进一步形成的凹部。因此,凹部201A与凹部200A相比形成得深。另外,由于凹部201A在俯视观察时将半导体元件14的周边至少一部分包围而形成,因此位于半导体元件14周边的DP树脂20A的厚度与未形成凹部201A的情况相比形成得薄。
根据这样的结构,与半导体元件14的上表面相对的DP树脂20A的厚度相比于未形成凹部200A的情况而形成得薄。因此,通过形成凹部200A,从而能够将半导体元件14与DP树脂20A的最上表面之间的距离缩短,因此能够促进DP树脂20A的最上表面的温度上升,而且能够提高将半导体元件14的热向外部空气散热的性能。
另外,不对半导体元件14、配线24A以及配线24B等进行封装的区域的DP树脂20A由于形成凹部201A而得到削减,因此能够有效地降低制造成本。并且,通过形成凹部200A以及凹部201A而使DP树脂20A的表面积增加,因此向外部空气的散热性提高。另外,通过削减所需要的DP树脂20A,从而能够以相同树脂量应用于尺寸大的基板部件。
<第3实施方式>
对本实施方式涉及的半导体装置、以及半导体装置的制造方法进行说明。在以下的说明中,对与上述所记载的实施方式中说明的结构要素相同的结构要素标注相同的标号而图示,适当地省略其详细说明。
<关于半导体装置的结构>
图4是概略地表示本实施方式涉及的半导体装置的结构的例子的剖面图。如图4所例示的这样,半导体装置具备绝缘基板12、半导体元件14、壳体16、DP树脂20B。
如图4所例示的这样,在DP树脂20B的最上表面形成有凹部200B以及凹部201B。
凹部200B是侧面为锥形形状的凹部。由于凹部200B位于半导体元件14的上方,因此与半导体元件14的上表面相对的DP树脂20B的厚度相比于未形成凹部200B的情况而形成得薄。此外,凹部200B形成于在俯视观察时包含半导体元件14整体的位置。
凹部201B是侧面为锥形形状的凹部。凹部201B与凹部200B相比形成得深。另外,由于凹部201B在俯视观察时将半导体元件14的周边至少一部分包围而形成,因此位于半导体元件14周边的DP树脂20B的厚度与未形成凹部201B的情况相比形成得薄。
根据这样的结构,通过以追随于配线等的弯曲的形状的方式形成DP树脂20B,从而能够有效地削减不对半导体元件14、配线24A以及配线24B等进行封装的区域的DP树脂20B。
此外,上述的结构之中,凹部200B可以置换为如图2所例示的凹部200A那样的侧面与底面正交的构造,凹部201B可以置换为如图2所例示的凹部201A那样的侧面与底面正交的构造。
<第4实施方式>
对本实施方式涉及的半导体装置、以及半导体装置的制造方法进行说明。在以下的说明中,对与上述所记载的实施方式中说明的结构要素相同的结构要素标注相同的标号而图示,适当地省略其详细说明。
<关于半导体装置的制造方法>
就第1至第3实施方式涉及的半导体装置而言,首先将未硬化的DP树脂灌封至壳体16内。然后,将半导体元件14埋入至DP树脂内。
之后,在填充于壳体16内的DP树脂的上表面载置使用了与DP树脂密接性低的金属、例如Ni镀层等的模具。然后,进一步进行DP树脂的固化处理,即,热硬化处理,使DP树脂硬化。在DP树脂硬化之后,将载置于DP树脂上表面的模具拆下。
就第1至第3实施方式所例示的半导体装置而言,树脂的形状没有变形,即,未形成树脂的凸起部等,另外,DP树脂的与壳体16接近的部分的最上表面高于DP树脂的半导体元件14的上表面处的最上表面,因此能够容易地将载置于DP树脂上表面的模具拆下。
<第5实施方式>
对本实施方式涉及的半导体装置、以及半导体装置的制造方法进行说明。在以下的说明中,对与上述所记载的实施方式中说明的结构要素相同的结构要素标注相同的标号而图示,适当地省略其详细说明。
<关于半导体装置的制造方法>
就第1至第3实施方式涉及的半导体装置而言,首先将未硬化的DP树脂灌封至壳体16内。其后,在填充于壳体16内的DP树脂的上表面载置使用了与DP树脂密接性低的金属、例如Ni镀层等的模具。然后,进一步进行DP树脂的固化处理,即,热硬化处理,使DP树脂硬化。在DP树脂硬化之后,将载置于DP树脂上表面的模具拆下。
这里,载置于DP树脂上表面的模具所使用的金属材料能够使用与DP树脂相比线膨胀系数大的金属材料。
如果进行高温下的固化处理,在冷却之后将上述的模具拆下,则由于模具的线膨胀率大,因此模具比DP树脂更大程度地收缩。这样,能够容易地将模具拆下。
<第6实施方式>
对本实施方式涉及的半导体装置、以及半导体装置的制造方法进行说明。在以下的说明中,对与上述所记载的实施方式中说明过的结构要素相同的结构要素标注相同的标号而图示,适当地省略其详细说明。
<关于半导体装置的结构>
本实施方式涉及的半导体装置是上述任意的实施方式所例示的半导体装置,而且作为半导体元件14的材料使用SiC等宽带隙半导体。
这里,上述的碳化硅(SiC)是宽带隙半导体的一种。宽带隙半导体通常是指具有大约2eV以上的禁带宽度的半导体,已知氮化镓(GaN)等Ⅲ族氮化物、氧化锌(ZnO)等Ⅱ族氧化物、硒化锌(ZnSe)等Ⅱ族硫属化物、金刚石以及碳化硅等。在本实施方式中对使用了碳化硅的情况进行说明,但即使是其它的半导体以及宽带隙半导体,也能够同样地应用。
根据这样的结构,由于如果半导体元件14的发热量高,则DP树脂的表面温度也变高,因此能够提高散热性。
<关于通过上述所记载的实施方式而产生的效果>
下面,示出通过上述所记载的实施方式而产生的效果的例子。此外,在以下的说明中,虽然是基于上述所记载的实施方式中所例示的具体结构而记载该效果,但在产生相同的效果的范围内,也可以与本申请说明书中所例示的其他具体的结构进行置换。
另外,该置换也可以跨越多个实施方式而实现。即,也可以是组合不同的实施方式中所例示的各种结构而产生相同的效果的情况。
根据上述所记载的实施方式,半导体装置具备绝缘基板12、半导体元件14、壳体16、树脂。这里,树脂与例如DP树脂20、DP树脂20A以及DP树脂20B中的至少1个相对应。半导体元件14配置于绝缘基板12的上表面。壳体16以将半导体元件14收容在内侧的方式与绝缘基板12连接。DP树脂20以将半导体元件14埋入的方式填充在壳体16的内侧。并且,在壳体16的内侧的DP树脂20的上表面形成第1凹部。这里,第1凹部与例如凹部200、凹部200A以及凹部200B中的至少1个相对应。另外,凹部200形成于在俯视观察时包含半导体元件14整体的位置。
根据这样的结构,能够将半导体元件14与DP树脂20的上表面之间的距离缩短,因此能够在半导体元件14发热时,热量高效地传导至DP树脂20的上表面,提高该热量的向外部空气的散热性。另外,由于在半导体元件14的上方形成凹部,不形成DP树脂20的凸起部等,因此不会降低DP树脂20的机械强度,能够削减制造成本。
此外,能够适当省略这些结构以外的本申请说明书所例示的其他结构。即,只要至少具备上述的结构,就能够产生以上所记载的效果。
但是,在将本申请说明书所例示的其他结构中的至少1个结构适当追加至以上所记载的结构的情况下,即,即使适当地追加未作为以上所记载的结构提及的在本申请说明书所例示的其他结构的情况下,也能够产生相同的效果。
另外,根据以上所记载的实施方式,具备与半导体元件14电连接的至少1个配线。这里,配线例如与配线26、配线24A以及配线24B中的至少1个相对应。另外,DP树脂20以将配线26、配线24A以及配线24B埋入的方式填充。根据这样的结构,树脂在半导体元件14的上方形成凹部,而且,是将与半导体元件14电连接的配线DP埋入而形成的,因此能够提高散热性,并且削减制造成本。
另外,根据以上所记载的实施方式,具备在凹部200A的底面形成的第2凹部。这里,第2凹部例如与凹部201A相对应。根据这样的结构,不对半导体元件14、配线24A以及配线24B等进行封装的区域的DP树脂20A通过形成凹部201A而被削减,因此能够有效地降低制造成本。并且,由于通过形成凹部200A以及凹部201A而使DP树脂20A的表面积增加,因此向外部空气的散热性提高。
另外,根据以上所记载的实施方式,凹部200B以及凹部201B中的至少一者的侧面是锥形形状。根据这样的结构,通过以追随于配线等的弯曲形状的方式形成DP树脂20B,从而能够有效地削减不对半导体元件14、配线24A以及配线24B等进行封装的区域的DP树脂20B。另外,由于DP树脂20B的表面积增加,因此DP树脂20B的向外部空气的散热性提高。另外,通过削减所需要的DP树脂20B,能够以相同树脂量应用于尺寸大的基板部件。
另外,根据以上所记载的实施方式,半导体元件14由包含SiC的宽带隙半导体构成。根据这样的结构,如果半导体元件14的发热量高,则DP树脂的表面温度也变高,因此能够提高散热性。
根据上述所记载的实施方式,在半导体装置的制造方法中,以将半导体元件14埋入的方式在对配置于绝缘基板12上表面的半导体元件14进行收容的壳体16的内侧填充DP树脂20。然后,在所填充的DP树脂20的上表面配置DP树脂20的金属模具。然后,对配置了金属模具的状态下的DP树脂20,进行热硬化处理。然后,在热硬化处理之后,将金属模具拆下。这里,在DP树脂20的上表面形成凹部200。另外,凹部200形成于在俯视观察时包含半导体元件14整体的位置。
根据这样的结构,能够将半导体元件14与DP树脂20的上表面之间的距离缩短,因此能够在半导体元件14发热时,热量高效地传导至DP树脂20的上表面,提高该热量的向外部空气的散热性。另外,由于在半导体元件14的上方形成凹部,不形成DP树脂20的凸起部等,因此不会降低DP树脂20的机械强度,能够削减制造成本。
此外,能够适当省略上述结构以外的本申请说明书所例示的其他结构。即,只要至少具备上述的结构,就能够产生以上所记载的效果。
但是,在将本申请说明书所例示的其他结构中的至少1个结构适当追加至以上所记载的结构的情况下,即,即使适当地追加未作为以上所记载的结构提及的在本申请说明书所例示的其他结构的情况下,也能够产生相同的效果。
另外,在没有特别限制的情况下,进行各个处理的顺序能够变更。
另外,根据以上所记载的实施方式,在金属模具形成Ni镀层。根据这样的结构,由于金属模具与DP树脂之间密接性变低,因此能够容易地将金属模具从DP树脂拆下。
另外,根据上述所记载的实施方式,金属模具由与树脂相比线膨胀系数大的金属构成。根据这样的结构,如果进行高温下的固化处理,在冷却之后将上述的模具拆下,则由于模具的线膨胀率大,因此模具比DP树脂更大程度地收缩。这样,能够容易地将模具拆下。
<关于以上所记载的实施方式的变形例>
在以上所记载的实施方式中,有时还记载了各个结构要素的材质、材料、尺寸、形状、相对配置关系或实施条件等,但这些在所有方面都是1个例子,并不限定于本说明书所记载的内容。
因此,在本说明书所公开的技术的范围内,可想到未例示的无数变形例以及等同物。例如,包含对至少1个结构要素进行变形的情况、追加的情况或者进行省略的情况、以及将至少1个实施方式中的至少1个结构要素提取而与其他实施方式的结构要素进行组合的情况。
另外,本说明书中的说明是用于实现本技术涉及的所有目的而参考的,均未承认是现有技术。
另外,在以上所记载的实施方式中,在记载了材料名称等但没有特别指定的情况下,只要不产生矛盾,则包括该材料中包含其他添加物的例如合金等。
Claims (9)
1.一种半导体装置,其具备:
绝缘基板;
半导体元件,其配置于所述绝缘基板的上表面;
壳体,其以将所述半导体元件收容于内侧的方式与所述绝缘基板连接;以及
树脂,其以将所述半导体元件埋入的方式填充在所述壳体的内侧,
在所述壳体的内侧的所述树脂的上表面形成第1凹部,
所述第1凹部形成于在俯视观察时包含所述半导体元件整体的位置。
2.根据权利要求1所述的半导体装置,其中,
还具备至少1个配线,该配线与所述半导体元件电连接,
所述树脂是以将所述配线埋入的方式填充的。
3.根据权利要求1或2所述的半导体装置,其中,
还具备第2凹部,该第2凹部形成于所述第1凹部的底面。
4.根据权利要求3所述的半导体装置,其中,
所述第1凹部以及所述第2凹部中的至少一者的侧面是锥形形状。
5.根据权利要求1至4中任一项所述的半导体装置,其中,
所述半导体元件由包含SiC的宽带隙半导体构成。
6.一种半导体装置的制造方法,其中,
以将在绝缘基板的上表面配置的半导体元件埋入的方式将树脂填充在对所述半导体元件进行收容的壳体的内侧,
在所填充的所述树脂的上表面配置所述树脂的金属模具,
对配置了所述金属模具的状态下的所述树脂,进行热硬化处理,
在所述热硬化处理之后,将所述金属模具拆下,
在所述树脂的上表面形成第1凹部,
所述第1凹部形成于在俯视观察时包含所述半导体元件整体的位置。
7.根据权利要求6所述的半导体装置的制造方法,其中,
在所述金属模具形成Ni镀层。
8.根据权利要求6或7所述的半导体装置的制造方法,其中,
所述金属模具由与所述树脂相比线膨胀系数大的金属构成。
9.根据权利要求6至8中任一项所述的半导体装置的制造方法,其中,
所述半导体元件由包含SiC的宽带隙半导体构成。
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JP2022160270A (ja) * | 2021-04-06 | 2022-10-19 | 三菱重工業株式会社 | パワーモジュール、及びパワーモジュールの製造方法 |
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