JP2006206721A - 高耐熱合成高分子化合物及びこれで被覆した高耐電圧半導体装置 - Google Patents
高耐熱合成高分子化合物及びこれで被覆した高耐電圧半導体装置 Download PDFInfo
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- JP2006206721A JP2006206721A JP2005019877A JP2005019877A JP2006206721A JP 2006206721 A JP2006206721 A JP 2006206721A JP 2005019877 A JP2005019877 A JP 2005019877A JP 2005019877 A JP2005019877 A JP 2005019877A JP 2006206721 A JP2006206721 A JP 2006206721A
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- Prior art keywords
- siloxane
- organosilicon
- synthetic polymer
- organosilicon polymer
- polymer compound
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 161
- 150000001875 compounds Chemical class 0.000 title claims abstract description 146
- 229920001059 synthetic polymer Polymers 0.000 title claims abstract description 128
- 229920001558 organosilicon polymer Polymers 0.000 claims abstract description 130
- 239000010419 fine particle Substances 0.000 claims abstract description 61
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000000919 ceramic Substances 0.000 claims abstract description 39
- 238000007259 addition reaction Methods 0.000 claims abstract description 22
- 229910002808 Si–O–Si Inorganic materials 0.000 claims abstract description 16
- 229920000642 polymer Polymers 0.000 claims abstract description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 80
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 79
- -1 polydimethylsiloxane Polymers 0.000 claims description 49
- 238000011049 filling Methods 0.000 claims description 23
- 229920001921 poly-methyl-phenyl-siloxane Polymers 0.000 claims description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 229910002601 GaN Inorganic materials 0.000 claims description 15
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 13
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 9
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000003786 synthesis reaction Methods 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 16
- 239000011248 coating agent Substances 0.000 abstract description 14
- 238000004132 cross linking Methods 0.000 abstract 1
- 125000005647 linker group Chemical group 0.000 abstract 1
- 230000002441 reversible effect Effects 0.000 description 21
- 239000007789 gas Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000002245 particle Substances 0.000 description 16
- 230000017525 heat dissipation Effects 0.000 description 15
- 230000005684 electric field Effects 0.000 description 14
- 238000002161 passivation Methods 0.000 description 14
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 13
- UCHOFYCGAZVYGZ-UHFFFAOYSA-N gold lead Chemical compound [Au].[Pb] UCHOFYCGAZVYGZ-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000003822 epoxy resin Substances 0.000 description 11
- 239000000945 filler Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 229910018503 SF6 Inorganic materials 0.000 description 10
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 10
- 229960000909 sulfur hexafluoride Drugs 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 4
- 125000002947 alkylene group Chemical group 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011882 ultra-fine particle Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229920000271 Kevlar® Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 241000053451 Silis Species 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004761 kevlar Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/42—Block-or graft-polymers containing polysiloxane sequences
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/42—Block-or graft-polymers containing polysiloxane sequences
- C08G77/44—Block-or graft-polymers containing polysiloxane sequences containing only polysiloxane sequences
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
- C08K3/14—Carbides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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Abstract
【解決手段】ワイドギャップ半導体素子の外面を、合成高分子化合物で被覆する。この合成高分子化合物は、シロキサン(Si−O−Si結合体)による橋かけ構造を有する1種以上の有機珪素ポリマーAとシロキサンによる線状連結構造を有する1種以上の有機珪素ポリマーBとをシロキサン結合により連結させた有機珪素ポリマーC同士を、付加反応により生成される共有結合で連結させて三次元の立体構造に形成している。この合成高分子化合物に高い熱伝導性を有する絶縁性セラミックスの微粒子を混合し、熱伝導率を高くしている。
【選択図】図1
Description
一方、炭化珪素(以下、SiCと記す)等のワイドギャップ半導体材料でパワー半導体装置を構成することが試みられている。SiC等のワイドギャップ半導体材料はSiに比べてエネルギーギャップが大きく、絶縁破壊電界強度も約1桁大きい等の優れた物理特性を有しているため、高耐熱で高耐電圧のパワー半導体装置に用いるのに好適である。
エポキシ樹脂も同様であり、高温では柔軟性が乏しくなり、200℃以上になるとガラス化して堅くなってしまう。そのためSiC半導体素子の温度が通電時の高温状態からオフ時の室温状態に戻ると、エポキシ樹脂の内部に多数のクラックが発生し高電界には耐えることができず耐電圧性はよくない。
本発明の他の観点の合成高分子化合物は、付加反応により生成される共有結合で連結し、三次元の立体構造を形成しうる高分子組成物であり、シロキサン(Si−O−Si結合体)による橋かけ構造を有する少なくとも1種の第1の有機珪素ポリマーと、シロキサンによる線状連結構造を有する少なくとも1種の第2の有機珪素ポリマーとを、シロキサン結合により連結させた、分子量が2万から80万である第3の有機珪素ポリマーの1種以上と、高い熱伝導性を有する絶縁性セラミックスの微粒子の1種以上を含有することを特徴とする。
この発明によれば、この合成高分子化合物には、熱伝導性の高い絶縁性セラミックスの微粒子が混合されているので、耐電圧性を損ねることなく高い熱伝導性を達成できる。ここで、熱伝導性が高いとは、少なくともエポキシ樹脂やシリコンゴムの熱伝導率よりも高い熱伝導率を有することを意味し、他の性能を損ねなければ熱伝導率は高ければ高いほど良い。
この発明によれば、この合成高分子化合物には高熱伝導性を有する絶縁性セラミックスの微粒子を混合しているので、熱伝導性が良く、半導体素子で生じる熱の放散効果が高い。また、絶縁性セラミックスの微粒子がフィラーとしても機能するので厚く盛り上がった形状を保つ形状保持性がよく耐電圧性の向上にも寄与できる。従って、この合成高分子化合物で半導体素子を被覆することにより、放熱性に優れており形状保持性もよいことから更に高い耐熱性と高い耐電圧を有する半導体装置を得ることができる。
合成高分子化合物には高い熱伝導率を有する絶縁性セラミックスの微粒子を混合しているので熱伝導性が良く、半導体素子で生じる熱の放散効果が高い。合成高分子化合物の熱放散性が良いので、半導体素子内で発生した熱を半導体素子の支持体側からだけでなく被覆物である合成高分子化合物側からも放散できる。そのため素子の過剰な温度上昇を抑制でき動作速度などの素子の性能の低下や素子の熱破壊を防止できる。また、絶縁性セラミックスの微粒子が合成高分子化合物のフィラーとしても機能するので更に厚く盛り上がったドーム状の形状を形成しその形状を保つ形状保持性がよく耐電圧性の向上にも寄与できる。従って、この絶縁性セラミックスの微粒子を充填した合成高分子化合物で半導体素子を被覆することにより放熱性に優れかつ形状保持性もよくなることから更に高い耐熱性と高い耐電圧性を有する半導体装置を得ることができる。
本発明の新規な合成高分子化合物はシロキサン(Si−O−Si結合体)による橋かけ構造を有する、ポリフェニルシルセスキオキサン、ポリメチルシルセスキオキサン、ポリメチルフェニルシルセスキオキサン、ポリエチルシルセスキオキサン及びポリプロピルシルセスキオキサンの群から選択した少なくとも1つを有する第1の有機珪素ポリマー(以下、有機珪素ポリマーAという)、及びシロキサンによる線状連結構造を有する、ポリジメチルシロキサン、ポリジエチルシロキサン、ポリジフェニルシロキサン及びポリメチルフェニルシロキサンの群から選択した少なくとも1つを有する第2の有機珪素ポリマー(以下、有機珪素ポリマーBという)を含有している。前記有機珪素ポリマーAと前記有機珪素ポリマーBはシロキサン結合により線状に連結されて大型の第3の有機珪素ポリマーを形成している。前記合成高分子化合物は、前記大型の第3の有機珪素ポリマーの複数のものが付加反応により生成される共有結合で立体的に連結されて三次元の立体構造を形成した化合物を形成している。
充填された絶縁性セラミックス微粒子は、上記の透光性や半導体装置構成材料との接着性に若干影響を及ぼすが、上記の充填率や粒径の範囲では実用上問題を生じない。
<<第1実施例>>
図において、本発明の第1実施例の半導体装置は、耐電圧8kVの高耐電圧SiC(炭化珪素)pnダイオード素子13をパッケージ14に収納したものであり、高耐熱かつ高熱放散性の合成高分子化合物の被覆体16でSiCpnダイオード素子13を被覆している。
SiCpnダイオード素子13は以下の構成を有する。厚さ約300μmの高不純物濃度のn型のSiCのカソード領域1の上面に厚さ約90μmの低不純物濃度のn型のSiCのドリフト層2が形成されている。カソード領域1の下面にはカソード電極7が形成されている。ドリフト層2の中央領域に、主接合を形成するp型のSiCのアノード領域3が形成されている。アノード領域3にはアノード電極6が形成されている。アノード領域3の周囲にはp型の電界緩和領域4が形成されている。アノード領域3及び電界緩和領域4を含むSiCpnダイオード素子13の上面には、二酸化シリコン層、窒化シリコン層、二酸化シリコン層の順で積層した3層構造の表面保護膜5が形成されている。アノード電極6は、電気接続手段である金のリード線8でアノード端子9の上端9aに接続されている。図1ではリード線8は1本のみ図示されているが、リード線8は、リード線8を流れる電流値に応じて複数のものを並列に接続すればよい。
SiCpnダイオード素子13を合成高分子化合物で被覆しこれを熱硬化させた後、窒素雰囲気中で金属キャップ14を支持体10に取り付けて溶接し、内部空間15に窒素ガスを充たしてSiCpnダイオードが完成する。
<<第2実施例>>
上記のようにGTOサイリスタ素子20を合成高分子化合物で被覆し硬化させた後、窒素雰囲気中で金属キャップ43を支持体38に取り付けて溶接する。これにより内部空間44に窒素ガスが封入されたSiC−GTOサイリスタ装置が完成する。
第2実施例のSiC−GTOサイリスタ装置において、アノード端子35の電位がカソード端子39よりも高電位になるように順方向に5kV電圧を印加し、ゲート端子37の電位をアノード端子35と同電位にすると、電流が流れないオフ状態が維持され、5kVの耐電圧が得られた。
また、本実施例のSiC−GTOサイリスタ装置について、以下の第1及び第2の動作試験を行い更なる本発明の効果を確認できた。
GTOサイリスタ素子20に塗布した本実施例の合成高分子化合物の被覆体42のGTOサイリスタ素子20等への付着状態について調べたところ、被覆体42は、GTOサイリスタ素子20の電界緩和領域26上の保護膜27及び側面のSiCの露出面にも強固に付着していた。
<<第3実施例>>
<<第4実施例>>
図5において、ニッケルメッキを施した熱伝導性のよい銅基板101の面上に所定の距離を隔てて例えば窒化アルミニウム製の2つの絶縁基板116及び118がそれぞれ高温半田115、117により接着されている。
絶縁基板118には、銅箔のパターンで内部配線125及び126が形成されている。内部配線126にSiCpnダイオード素子13のカソード電極7が高温半田で接着されている。SiCpnダイオード素子13のアノード電極6は電気接続部であるリード線8により内部配線125に接続されている。
本実施例のSiC−GTOモジュール160の逆耐電圧は約5.7kVであり、SiのGTOのモジュールでは動作不能の250℃の高温でも前記の逆耐電圧を維持できた。逆電圧5kVでのリーク電流密度は2×10-4A/cm2以下であり良好であった。また、3kV以上の高耐圧のSiダイオードでは通電困難な200A/cm2の高電流密度の電流を、180℃の高温空気雰囲気中で本実施例のSiC−GTOモジュール160に通電し200時間稼動させたが、被覆体130、131、165にクラックの発生や変形等の異常は生じなかった。温度250℃で電流密度200A/cm2での通電時の順方向電圧は4.3Vであり、200時間稼働前後の変化は測定誤差範囲でありほとんど変化しなかった。
前記各実施例では、SiCやGaNを用いた素子や受光素子の場合のみを述べたが、本発明は他のワイドギャップ半導体材料を用いた素子にも適用できる。特に、ダイヤモンド、ガリュームリンワイドギャップ半導体材料を用いた素子にも有効に適用できる。
また各々の半導体領域の極性のn型をp型に、p型をn型に逆転させた構成の半導体装置にも当然ながら適用できる。
また、絶縁性セラミックス微粒子としてはAlNとBeOを用いたが、Al2O3、多結晶SiC、ダイヤモンド、窒化ほう素などの熱伝導率の高い他の絶縁性セラミックス微粒子を用いても同様の効果が得られる。
2 ドリフト層
3 アノード領域
4 電界緩和ターミネーション領域
5 パッシベーション膜
6 アノード電極
7 カソード電極
8 リード線
9 アノード端子
10 支持体
11 カソード端子
12 絶縁ガラス
13 SiCpnダイオード素子
14 金属キャップ
15 窒素などの不活性ガス
16、42、81 被覆体
20 GTOサイリスタ素子
21 カソード領域
22 pベース領域
23 pドリフト層
24 nベース領域
25 アノード領域
27 パッシベーション膜
29 アノード電極
31 ゲート電極
32 カソード電極
34、36 金のリード線
51 GaNnpnバイポーラトランジスタ
52 SiCホトダイオード
53 コレクタ領域
54 ベース領域
55 エミッタ領域
57 パッシベーション膜
60 発光窓
80 受光部
101 銅基板
102 フレーム
105 カバー
116、118 絶縁基板
130、131 被覆体
165 充填材
Claims (18)
- 付加反応により生成される共有結合で連結し、三次元の立体構造を形成しうる高分子組成物であり、シロキサン(Si−O−Si結合体)による橋かけ構造を有する少なくとも1種の第1の有機珪素ポリマーと、シロキサンによる線状連結構造を有する少なくとも1種の第2の有機珪素ポリマーとを、シロキサン結合により連結させた、分子量が2万から80万である第3の有機珪素ポリマーの1種以上を含有することを特徴とする合成高分子化合物。
- 付加反応により生成される共有結合で連結し、三次元の立体構造を形成しうる高分子組成物であり、シロキサン(Si−O−Si結合体)による橋かけ構造を有する少なくとも1種の第1の有機珪素ポリマーと、シロキサンによる線状連結構造を有する少なくとも1種の第2の有機珪素ポリマーとを、シロキサン結合により連結させた、分子量が2万から80万である第3の有機珪素ポリマーの1種以上と、高い熱伝導性を有する絶縁性セラミックスの微粒子の1種以上を含有することを特徴とする合成高分子化合物。
- 付加反応により生成される共有結合で連結し、三次元の立体構造を形成するとともに、高い熱伝導性を有する絶縁性セラミックスの微粒子の1種以上を20%〜80%の体積充填率で含有していることを特徴とする請求項2記載の合成高分子化合物。
- 前記第1の有機珪素ポリマーが、ポリフェニルシルセスキオキサン、ポリメチルシルセスキオキサン、ポリメチルフェニルシルセスキオキサン、ポリエチルシルセスキオキサン及びポリプロピルシルセスキオキサンの群から選択した少なくとも1つであり、
前記第2の有機珪素ポリマーが、ポリジメチルシロキサン、ポリジエチルシロキサン、ポリジフェニルシロキサン及びポリメチルフェニルシロキサンの群から選択した少なくとも1つであることを特徴とする請求項1又は2記載の合成高分子化合物。 - 前記第1の有機珪素ポリマーの分子量が前記第2の有機珪素ポリマーの分子量よりも小さいことを特徴とする請求項1又は2記載の合成高分子化合物。
- 前記高い熱伝導性を有する絶縁性セラミックスの微粒子は、窒化アルミニウム(AlN)の微粒子、酸化ベリリウム(BeO)の微粒子、アルミナ(Al2O3)の微粒子及び多結晶SiCの微粒子の少なくとも1種を含むことを特徴とする請求項2記載の合成高分子化合物。
- 前記合成高分子化合物は、シロキサンによる橋かけ構造を有する第1の有機珪素ポリマーの1種と、シロキサンによる線状連結構造を有する第2の有機珪素ポリマーの1種とをシロキサン結合により線状に連結させた、分子量が2万から80万の第3の有機珪素ポリマーを1種以上構成し、この1種以上の第3の有機珪素ポリマーを付加反応により生成される共有結合で連結して三次元の立体構造に形成した化合物、及び
前記高い熱伝導性を有する絶縁性セラミックスの微粒子を20%から80%の体積充填率で含有していることを特徴とする請求項1又は2記載の合成高分子化合物。 - 半導体素子、及び半導体素子を外部の機器に電気的に接続するための電気接続手段の少なくとも一部分を被覆する合成高分子化合物を有する半導体装置において、
前記合成高分子化合物が、シロキサン(Si−O−Si結合体)による橋かけ構造を有する少なくとも1種の第1の有機珪素ポリマーと、シロキサンによる線状連結構造を有する少なくとも1種の第2の有機珪素ポリマーとを、シロキサン結合により連結させた分子量が2万から80万の第3の有機珪素ポリマーの1種以上を、付加反応により生成される共有結合で連結し、三次元の立体構造に形成した化合物を含有していることを特徴とする半導体装置。 - 半導体素子、及び半導体素子を外部の機器に電気的に接続するための電気接続手段の少なくとも一部分を被覆する合成高分子化合物を有する半導体装置において、
前記合成高分子化合物が、シロキサン(Si−O−Si結合体)による橋かけ構造を有する少なくとも1種の第1の有機珪素ポリマーと、シロキサンによる線状連結構造を有する少なくとも1種の第2の有機珪素ポリマーとを、シロキサン結合により連結させた分子量が2万から80万の第3の有機珪素ポリマーの1種以上を、付加反応により生成される共有結合で連結し、三次元の立体構造に形成した化合物、及び
前記化合物に混合された高い熱伝導性を有する絶縁性のセラミックスの微粒子を、15%以上の体積充填率で含有していることを特徴とする半導体装置。 - 前記合成高分子化合物は、シロキサンによる橋かけ構造を有する第1の有機珪素ポリマーの1種と、シロキサンによる線状連結構造を有する第2の有機珪素ポリマーの1種とをシロキサン結合により線状に連結させた、分子量が2万から80万の第3の有機珪素ポリマーを1種以上構成し、この1種以上の第3の有機珪素ポリマーを付加反応により生成される共有結合で連結して三次元の立体構造に形成した化合物、及び
前記高い熱伝導性を有する絶縁性セラミックスの微粒子を20%から80%の体積充填率で含有していることを特徴とする請求項8記載の半導体装置。 - 前記半導体素子がワイドギャップ半導体の、炭化珪素(SiC)を用いたSiC半導体素子および窒化ガリウム(GaN)を用いたGaN半導体素子のいずれか一方であり、
前記第1の有機珪素ポリマーが、ポリフェニルシルセスキオキサン、ポリメチルシルセスキオキサン、ポリメチルフェニルシルセスキオキサン、ポリエチルシルセスキオキサン及びポリプロピルシルセスキオキサンの群から選択した少なくとも1つであり、
前記第2の有機珪素ポリマーが、ポリジメチルシロキサン、ポリジエチルシロキサン、ポリジフェニルシロキサン及びポリメチルフェニルシロキサンの群から選択した少なくとも1つであることを特徴とする請求項8記載の半導体装置。 - 前記半導体素子がワイドギャップ半導体受光素子とワイドギャップ半導体発光素子のいずれか一方または両方を組み合わせたものであり、
前記第1の有機珪素ポリマーが、ポリフェニルシルセスキオキサン、ポリメチルシルセスキオキサン、ポリメチルフェニルシルセスキオキサン、ポリエチルシルセスキオキサン及びポリプロピルシルセスキオキサンの群から選択した少なくとも1つであり、
前記第2の有機珪素ポリマーが、ポリジメチルシロキサン、ポリジエチルシロキサン、ポリジフェニルシロキサン及びポリメチルフェニルシロキサンの群から選択した少なくとも1つであることを特徴とする請求項8記載の半導体装置。 - 前記第1の有機珪素ポリマーの分子量が前記第2の有機珪素ポリマーの分子量よりも小さいことを特徴とする請求項8から請求項12のいずれかに記載の半導体装置。
- 前記高い熱伝導性を有する絶縁性セラミックスの微粒子は、窒化アルミニウム(AlN)の微粒子、酸化ベリリウム(BeO)の微粒子、アルミナ(Al2O3)の微粒子及び多結晶SiCの微粒子の少なくとも1種を含むことを特徴とする請求項8から請求項12のいずれかに記載の半導体装置。
- 熱伝導性の良い基板上に取付けられた少なくとも1つの半導体素子、
前記半導体素子を外部の機器に電気的に接続するための電気接続部、
前記半導体素子と前記電気接続部の少なくとも一部を被覆する、シロキサン(Si−O−Si結合体)による橋かけ構造を有する少なくとも1種の第1の有機珪素ポリマーと、シロキサンによる線状連結構造を有する少なくとも1種の第2の有機珪素ポリマーとを、シロキサン結合により連結させた分子量が2万から80万の第3の有機珪素ポリマーの1種以上を、付加反応により生成される共有結合で連結し三次元の立体構造に形成した化合物であり、且つ高い熱伝導性を有する絶縁性セラミックスの微粒子を含有する第1の合成高分子化合物、
前記第1の合成高分子化合物で被覆した半導体素子及び電気接続部を収納するように前記基板に設けられた硬質樹脂製の容器、
前記容器内の隙間に充填された、シロキサン(Si−O−Si結合体)による橋かけ構造を有する少なくとも1種の第4の有機珪素ポリマーと、シロキサンによる線状連結構造を有する少なくとも1種の第5の有機珪素ポリマーとを、シロキサン結合により連結させた分子量が2万から80万の第6の有機珪素ポリマーの1種以上を、付加反応により生成される共有結合で連結し三次元の立体構造に形成した化合物であり、且つ高い熱伝導性を有する絶縁性セラミックスの微粒子を含有する第2の合成高分子化合物上記、及び
前記電気接続部につながり、前記容器の外へ導出された外部接続端子
を有する半導体装置。 - 前記第1および第2の合成高分子化合物は、シロキサンによる橋かけ構造を有する第1の有機珪素ポリマーと、シロキサンによる線状連結構造を有する第2の有機珪素ポリマーとを交互にシロキサン結合により線状に連結させて第3の有機珪素ポリマーを構成し、前記第3の有機珪素ポリマーの複数のものを、付加反応により生成される共有結合で連結して三次元の立体構造に形成した化合物を含有することを特徴とし、
第2の合成高分子化合物が第1の合成高分子化合物よりも高い柔軟性を有していることを特徴とする請求項15記載の半導体装置。 - 前記半導体素子がワイドギャップ半導体を用いたSiC半導体素子およびGaN半導体素子のいずれか一方であり、
前記第1と第4の有機珪素ポリマーが、ポリフェニルシルセスキオキサン、ポリメチルシルセスキオキサン、ポリメチルフェニルシルセスキオキサン、ポリエチルシルセスキオキサン及びポリプロピルシルセスキオキサンの群から選択した少なくとも1つであり、
前記第2と第5の有機珪素ポリマーが、ポリジメチルシロキサン、ポリジエチルシロキサン、ポリジフェニルシロキサン及びポリメチルフェニルシロキサンの群から選択した少なくとも1つであることを特徴とする請求項15記載の半導体装置。 - 前記半導体素子が、SiC−GTO素子とSiCダイオード素子であり、前記容器内で前記電気接続部により逆並列に接続されていることを特徴とする請求項15記載の半導体装置。
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JP2005019877A JP2006206721A (ja) | 2005-01-27 | 2005-01-27 | 高耐熱合成高分子化合物及びこれで被覆した高耐電圧半導体装置 |
CNA2006800032379A CN101107293A (zh) | 2005-01-27 | 2006-01-25 | 高耐热合成高分子化合物以及高耐电压半导体装置 |
PCT/JP2006/301122 WO2006080338A1 (ja) | 2005-01-27 | 2006-01-25 | 高耐熱合成高分子化合物及び高耐電圧半導体装置 |
US11/795,086 US20080042142A1 (en) | 2005-01-27 | 2006-01-25 | Highly Heat-Resistant Synthetic Polymer Compound and High Withstand Voltage Semiconductor Device |
KR1020077016042A KR20070102515A (ko) | 2005-01-27 | 2006-01-25 | 고 내열 합성 고분자 화합물 및 고 내전압 반도체 장치 |
EP06712317A EP1857488A4 (en) | 2005-01-27 | 2006-01-25 | TOO HIGH HEAT-RESISTANT POLYMER CONNECTION AND SEMICONDUCTOR COMPONENT HIGH RESISTANCE |
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US20080042142A1 (en) | 2008-02-21 |
KR20070102515A (ko) | 2007-10-18 |
CN101107293A (zh) | 2008-01-16 |
EP1857488A1 (en) | 2007-11-21 |
EP1857488A4 (en) | 2009-06-03 |
WO2006080338A1 (ja) | 2006-08-03 |
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