CN104934404A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN104934404A
CN104934404A CN201510121149.XA CN201510121149A CN104934404A CN 104934404 A CN104934404 A CN 104934404A CN 201510121149 A CN201510121149 A CN 201510121149A CN 104934404 A CN104934404 A CN 104934404A
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lead
messenger wire
inner lead
semiconductor device
island portion
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CN104934404B (zh
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田口康祐
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Seiko Instruments Inc
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Abstract

本发明提供与衬底的接合牢固并且可靠性高的半导体装置。外部引线（5）经由内部引线与内部引线吊线（3）电连接，从而在外部引线切断面（11）也形成镀层被膜，使得容易在从密封树脂（10）延伸出的外部引线整个表面形成焊锡层。另外，在内部引线吊线（3）设有第1收缩部（12a），能够抑制切断内部引线吊线时的损伤。

Description

半导体装置及其制造方法
技术领域
本发明涉及利用引线框的半导体装置及其制造方法。
背景技术
随着近年来的便携电子设备的小型化，所使用的半导体封装也需要小型化、薄型化且确保安装强度的半导体封装。作为将半导体封装小型化的对策，已知对衬底安装面平行引出外部端子的表面安装型封装。作为这类封装有SON（小外型无引脚封装：Small Outline Non－Lead Package）、QFN（四边扁平无引脚封装：Quad Flat Non－Lead Package）等。与DIP（双列直插式封装：Dual Inline Package）、SOP（小外型封装：Small Outline Package）相比，这些封装在安装于衬底时的外部电极较小，因此有衬底安装后的焊脚形成少、安装强度弱的特征。另外，这些封装的制造多采用以冲压模具或利用蚀刻的加工制作的引线框。引线框的材料一般使用194合金材料或铜合金。
在采用该引线框的半导体装置的制造中，向引线框上搭载半导体芯片，以金属丝电连接半导体芯片和引线框并进行树脂密封加工，在执行去飞边处理后，对铜面执行外装镀层处理。在外装镀层处理后，以既定尺寸从引线框切开半导体装置。由于这样在外装镀层处理后从引线框切开半导体装置，所以在外部引线切断面不形成外装镀层被膜。因此在将半导体装置安装于衬底时，有焊锡润湿性差的问题。为了提高以这些条件制作的半导体封装的安装强度，并且为了变更外部引线前端部的、平面形状或截面形状从而提高衬底安装后的焊锡润湿性，提出了容易形成焊脚并提高安装强度的形状（例如，参照专利文献1、2）。
专利文献1：日本特开2006－19465号公报
专利文献2：日本特开平7－45769号公报。
发明内容
然而，在进行半导体装置的小型化、薄型化的过程中，会要求进一步提高半导体装置的衬底安装强度。本发明提供提高了对半导体装置的衬底的焊锡粘接强度的半导体装置及其制造方法。
为了解决上述课题，采用了以下方案。
首先，一种半导体装置，包括：密封树脂，覆盖承载于引线框的岛部（island）上的半导体芯片；以及外部引线，从所述密封树脂向侧面延伸出，所述半导体装置的特征在于，具备：内部引线，与所述外部引线连接；内部引线吊线，与所述内部引线连接，并从所述密封树脂延伸出；以及镀层被膜，设置在所述外部引线整个表面，所述内部引线吊线具有俯视下与所述密封树脂的外形重叠的第1收缩部（絞り部）。
另外，半导体装置的特征在于，所述内部引线吊线在俯视下在所述密封树脂内具有第2收缩部。
另外，半导体装置的特征在于，在所述第1收缩部设有V凹口。
另外，半导体装置的特征在于，在所述第1收缩部与所述第2收缩部之间设有通孔。
进而，一种半导体装置的制造方法，其中半导体装置包括：覆盖承载于引线框的岛部上的半导体芯片的密封树脂、和从所述密封树脂向侧面延伸出的外部引线，所述半导体装置的制造方法的特征在于，包括：准备具备所述岛部、接近所述岛部的内部引线、与所述内部引线连接的内部引线吊线及所述外部引线、以及与所述岛部连接的岛部吊线，并且在所述内部引线吊线具有第1收缩部的引线框的工序；将所述半导体芯片小片接合、引线接合和树脂密封的工序；切断所述外部引线的前端的工序；通过电解镀在所述外部引线的切断面形成镀层被膜的工序；将所述内部引线吊线在所述第1收缩部切断的工序；以及切断所述岛部吊线的工序。
另外，如权利要求5所述的半导体装置的制造方法，其特征在于，在所述内部引线吊线的切断与岛部吊线的切断之间具有电特性检查工序。
依据本发明，由于在将半导体装置衬底安装时，在从外部引线的密封树脂露出的整个面形成厚膜焊锡层，所以能够在与衬底之间进行牢固的接合。另外，能够抑制在从引线框切开半导体装置时因应力对内部引线造成的损伤，能够可靠地确保与半导体元件电连接的金属丝的与内部引线的连接并能谋求提高可靠性。
附图说明
图1是示出本发明的半导体装置的实施例的鸟瞰图；（以外部引线为上方而图示）
图2是从本发明的半导体装置的图1的A方向观看的侧面图；（以外部引线为下方而图示）
图3是从本发明的半导体装置的图1的A方向观看的外部引线放大图；
图4是从本发明的半导体装置的图1的B方向观看的侧面图；
图5是从本发明的半导体装置的图1的B方向观看的外部引线放大图；
图6是说明本发明的半导体装置的发明的制造方法的图；
图7是示出本发明的半导体装置所使用的引线框的实施例的平面图；
图8是示出本发明的半导体装置的实施例的截面图。
标号说明
1 引线框；2 内部引线；3 内部引线吊线；4 岛部吊线；5 外部引线；5a 镀层被膜；6 岛部；7 金属丝；8 膏剂；9 半导体芯片；10 密封树脂；11 外部引线切断面；12a 第1吊线收缩部；12b 第2吊线收缩部；12c 吊线收缩V凹口形状；12d 吊线部通孔形状。
具体实施方式
以下，基于附图，对本发明进行说明。
图1是示出本发明的半导体装置的第1实施例的鸟瞰图。在此以外部引线5为上侧而进行图示。外部引线5具有上表面（安装面）、侧面（外部引线切断面）、与安装面相对的相反面、以及与安装面、相反面和外部引线切断面分别呈直角的面，并且从密封树脂10延伸出。另外，在大致长方体的半导体装置的侧面，从密封树脂10露出切断的内部引线吊线3和岛部吊线4的截面。
图2是从图1中的A方向观看的侧面图。在此以外部引线5为下侧而进行图示，安装在衬底时的安装面为本图的下表面。对外部引线5的周围设有镀层被膜5a，衬底安装侧下表面、相反侧的上表面、侧面及外部引线切断面11全部被镀层被膜5a覆盖。
图3是从图1中的A方向观看的外部引线放大图。外部引线周围全部被镀层被膜5a覆盖，形成在衬底安装侧下表面的镀层被膜5a的下表面，相对密封树脂主体下表面位于下方。
图4是从图1中的B方向观看的侧面图。在此以外部引线5为下表面而进行图示，安装在衬底时的安装面为本图的下表面。对外部引线5的衬底安装面侧下表面、相反侧的上表面及外部引线切断面11从密封树脂露出，外部引线的露出面全部被镀层被膜5a覆盖。
图5是从图1中的B方向观看的外部引线放大图。
示出外部引线从密封树脂10的侧面延伸出，并且其切断面（纸面上，右端）也包覆有镀层被膜5a的情形。
接着，对本发明的半导体装置的制造方法进行说明。
图6是示出本发明的半导体装置的第1实施例的制造方法的鸟瞰图。
图6（a）是示出本实施例的引线框1的鸟瞰图。引线框1包含：在后续承载半导体芯片的岛部6；与岛部6分离配置的内部引线2；以及与内部引线2相连的外部引线5。而且，内部引线2通过内部引线吊线3连接到引线框壳体，岛部6通过岛部吊线4连接到引线框壳体。
在内部引线吊线3形成有第1收缩部12a。另外，在内部引线2与外部引线5之间存在阶梯差部，使外部引线下表面低于内部引线下表面。此外，使内部引线下表面与岛部下表面为相同高度。在内部引线吊线3和岛部吊线4有弯曲部，对于与内部引线2连接的部分的内部引线吊线3的下表面，使与周围的引线框壳体连接的部分的内部引线吊线3的下表面相对较低。
对于岛部吊线4也同样，对于与岛部6连接的部分的岛部吊线4的下表面，使与周围的引线框壳体连接的部分的岛部吊线4的下表面相对较低。即，本实施例的引线框是将岛部及内部引线顶锻的引线框。这样的引线框1能够通过对既定厚度的194合金材料或铜合金构成的板材的模冲裁和模挤压来形成。即，为了确定岛部6、内部引线2、外部引线5、内部引线吊线3、岛部吊线4的平面形状而进行板材的冲裁。
接着，以使岛部6、内部引线3以及内部引线吊线3和岛部吊线4的一部分对于其他部分相对高的方式从下方到上方地进行模挤压。此时，会在内部引线2与外部引线5之间形成阶梯差。同时，会在内部引线吊线3及岛部吊线4也形成弯曲部。
图6（b）是引线接合工序后的鸟瞰图。在成形的引线框1的岛部6之上经由膏剂8小片接合半导体芯片9，接着，经由金属丝7电连接半导体芯片表面的电极焊盘与内部引线2。
图6（c）是树脂密封工序后的鸟瞰图。以覆盖半导体芯片9、金属丝7、内部引线2的方式用密封树脂10进行密封。虽然未图示，但是岛部6的下表面也被密封树脂10覆盖。外部引线5、内部引线吊线3和岛部吊线4的一部分从密封树脂10露出，与引线框壳体相连。此时，内部引线吊线3和岛部吊线4的弯曲部也凸出到密封树脂10之外。第1收缩部12a位于内部引线吊线3被密封树脂10覆盖的部分和露出的部分的边界。
图6（d）是外部引线切断工序后的鸟瞰图。从密封树脂10的侧面露出的外部引线5的前端部被切断，与引线框壳体切分开，形成切断面11。此时，在密封树脂10的不同侧面从密封树脂10露出内部引线吊线3和岛部吊线4的一部分，处于与引线框壳体相连的状态。因此，引线框壳体和外部引线切断面11处于保持电连接的状态，若在该形态下实施外装电解镀，则不仅在外部引线5的上表面、底面、侧面形成镀层被膜，而且在切断面11也形成镀层被膜。
图6（e）是经过外装镀层工序并切断内部引线吊线3后的鸟瞰图。在外部引线5的表面形成有镀层被膜5a，不需要的内部引线吊线3在第1收缩部被切断而与引线框壳体切分开。第1收缩部比内部引线吊线3细（截面积小），因此切断时的负荷小，传递到密封于密封树脂内的内部引线的损伤也小。由此，能够避免金属丝从内部引线脱离的问题。
岛部吊线4与引线框壳体相连，因此多个半导体装置处于搭载于1块引线框的状态。在该状态下进行电特性检查（拉伸强度测试），从而能够进行高效的检查。其后，切开岛部吊线4而将半导体装置单片化，得到图6（f）所示的形状。
经过以上那样的制造方法，能够得到在外部引线的整个面形成镀层被膜，能够得到不仅与衬底的连接牢固，而且能够保持内部引线与金属丝的良好的接合的半导体装置。
图7是示出本发明的半导体装置的引线框的实施例的平面图。
图7（a）是图6中说明的半导体装置所使用的引线框，是具有第1收缩部12a的引线框的平面图。本实施例的特征在于密封树脂10的外形与引线框的第1收缩部12a重合。由于存在第1收缩部12a，能够减小切断内部引线吊线时的损伤。
图7（b）是除了具有图7（a）的第1收缩部12a以外，还具有第2收缩部12b的引线框的平面图。是不仅密封树脂10的外形与引线框的第1收缩部12a重合，而且在密封树脂10内具有第2收缩部12b的结构。由于第1收缩部12a的存在，能够减小切断内部引线吊线时的损伤，并且，由于第2收缩部12b的存在，能够缓冲来自外部的损伤传递到内部引线。
图7（c）与图7（b）的不同点是对第1收缩部12a进一步施加V凹口，作成收缩V凹口形状12c。V凹口如图8所示的截面图那样，是在后续切断内部引线吊线的部分配置V凹口的形状。由此，切断内部引线吊线时的负荷进一步变小，并且进一步减小传递到密封于密封树脂内的内部引线的损伤。
图7（d）与图7（b）的不同点是在内部引线吊线的第1收缩部12a与第2收缩部12b之间设置通孔12d。在通孔12d中填充有密封树脂，具有使内部引线吊线切断时的损伤难以传到内部的效果。通孔12d的存在不仅用填充的密封树脂固定吊线，而且减小第1收缩部12a与第2收缩部12b之间的通孔12d周围的引线的截面积，因此具有如上所述的效果。

Claims (6)

1. 一种半导体装置，包括：密封树脂，覆盖承载于引线框的岛部上的半导体芯片；以及外部引线，从所述密封树脂向侧面延伸出，所述半导体装置的特征在于，具备：
内部引线，与所述外部引线连接；
内部引线吊线，与所述内部引线连接，并从所述密封树脂延伸出；以及
镀层被膜，设置在所述外部引线整个表面，
所述内部引线吊线具有俯视下与所述密封树脂的外形重叠的第1收缩部。
2. 如权利要求1所述的半导体装置，其特征在于，所述内部引线吊线在俯视下在所述密封树脂内具有第2收缩部。
3. 如权利要求2所述的半导体装置，其特征在于，在所述第1收缩部设有V凹口。
4. 如权利要求2所述的半导体装置，其特征在于，在所述第1收缩部与所述第2收缩部之间设有通孔。
5. 一种半导体装置的制造方法，其特征在于，包括：
准备具备岛部、接近所述岛部的内部引线、与所述内部引线连接的内部引线吊线及外部引线、以及与所述岛部连接的岛部吊线、并且在所述内部引线吊线具有第1收缩部的引线框的工序；
将半导体芯片小片接合、引线接合和树脂密封的工序；
切断所述外部引线的前端的工序；
通过电解镀在所述外部引线的切断面形成镀层被膜的工序；
将所述内部引线吊线在所述第1收缩部切断的工序；以及
切断所述岛部吊线的工序。
6. 如权利要求5所述的半导体装置的制造方法，其特征在于，在所述内部引线吊线的切断与所述岛部吊线的切断之间具有电特性检查工序。
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