CN104681449A - 带有光学检查特征的无引线半导体封装 - Google Patents

带有光学检查特征的无引线半导体封装 Download PDF

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Publication number
CN104681449A
CN104681449A CN201410720997.8A CN201410720997A CN104681449A CN 104681449 A CN104681449 A CN 104681449A CN 201410720997 A CN201410720997 A CN 201410720997A CN 104681449 A CN104681449 A CN 104681449A
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China
Prior art keywords
bonding welding
welding pad
tie
rod
pad
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CN201410720997.8A
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吴顺禄
李瑞家
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Infineon Technologies AG
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Infineon Technologies AG
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    • H01L2924/37—Effects of the manufacturing process

Abstract

本发明涉及带有光学检查特征的无引线半导体封装。半导体封装包含：多个键合焊盘，具有第一侧和与第一侧相对的第二侧；涂层，覆盖键合焊盘的第一侧；半导体管芯和电导体，附连到键合焊盘的第二侧；以及模制化合物，在键合焊盘的第二侧处封闭半导体管芯和电导体。模制化合物具有第一侧和与第一侧相对的第二侧，键合焊盘凸出穿过第一侧，模制化合物的第一侧在键合焊盘中的邻近的键合焊盘之间具有平面的表面。封装进一步包含电镀在未被模制化合物覆盖的键合焊盘的暴露侧壁上并且通过光学检查可检测的材料。对应的制造的方法也被提供。

Description

带有光学检查特征的无引线半导体封装
技术领域
本申请涉及无引线半导体封装，并且更具体地涉及模制的无引线半导体封装。
背景技术
引线框架形成IC封装的基部或构架，从而在组装成完成的封装期间为半导体管芯提供机械支撑。引线框架通常包含键合焊盘诸如用于附连半导体管芯的管芯座和用于为管芯提供外部电连接的引线。管芯能够通过线被连接到引线，例如通过线键合或带式自动键合。引线框架通常例如通过冲压或刻蚀而由平片状金属构造。片状金属被通常暴露于化学刻蚀剂，该化学刻蚀剂去除没有被光刻胶覆盖的区域。在刻蚀工艺之后，刻蚀的框架被单体化（分离）成引线框架条。每个引线框架条包含许多单元引线框架，每个具有以上描述的键合焊盘构造。
在引线框架条的组装工艺完成之后附连到管芯座的半导体管芯通常在单元引线框架从引线框架条分离之后被测试。可替代地，单元引线框架在管芯测试期间通过系杆（tie bar）保持机械连接到引线框架条。这一般被称为引线框架条测试。单元引线框架从引线框架条的分离发生在电测试之后。在任一情形下，引线框架条随后被包覆模制（over-mold）以形成密封的个体封装，所述密封的个体封装随后被单体化（分割）成物理分离的封装。封装单体化工艺传统地涉及锯切通过模制化合物和金属系杆（其为邻近键合焊盘的用于在早前加工期间增加引线框架稳定性的电导体）。锯切通过厚的系杆造成机械应力，并且在铜引线框架的情形下造成铜毛刺和铜颗粒污染。能够通过将锯切速度从300mm/s减慢到50mm/s并且提供更强的喷涂以去除铜颗粒来减少这些问题。然而，对单体化工艺这样的修改由于慢2倍的锯切时间而增加总体封装成本并且也降低工具生产量。
发明内容
一种制造模制半导体封装的方法包括：提供引线框架，引线框架包括多个较厚的键合焊盘，所述多个较厚的键合焊盘在键合焊盘的第一侧处被较薄的系杆互连；用抵抗对系杆的刻蚀的材料覆盖键合焊盘的第一侧；将半导体管芯和电导体附连到与第一侧相对的键合焊盘的第二侧；在键合焊盘的第二侧处将半导体管芯和电导体封闭在模制化合物中；在键合焊盘的被覆盖的第一侧处在键合焊盘之间至少部分地刻穿系杆；电镀未被模制化合物覆盖的键合焊盘的暴露侧壁；并且在系杆先前被刻蚀的不同区中切穿模制化合物以形成分离的封装。
依据半导体封装的实施例，半导体封装包括：多个键合焊盘，具有第一侧和与第一侧相对的第二侧；涂层，覆盖键合焊盘的第一侧；半导体管芯和电导体，附连到键合焊盘的第二侧；以及模制化合物，在键合焊盘的第二侧处封闭半导体管芯和电导体。模制化合物具有第一侧和与第一侧相对的第二侧，键合焊盘凸出穿过第一侧，模制化合物的第一侧在键合焊盘中的邻近的键合焊盘之间具有平面的表面。封装进一步包括电镀在未被模制化合物覆盖的键合焊盘的暴露侧壁上并且通过光学检查可检测的材料。
本领域技术人员通过阅读下面的详细描述并且通过查看附图将意识到额外的特征和优点。
附图说明
附图的元件不必相对于彼此成比例。相似的参考数字指代对应的类似部件。各种图解的实施例的特征能够被组合，除非它们彼此排斥。实施例在附图中被描绘并且在下面的描述中被详述。
包含图1A到1F的图1图解了制造模制半导体封装的方法的实施例的不同阶段。
图2图解了附连到印刷电路板的在图1F中示出的半导体封装的部分横截面视图。
包含图3A到3F的图3图解了制造模制半导体封装的方法的另一个实施例的不同阶段。
图4图解了附连到印刷电路板的在图3F中示出的半导体封装的部分横截面视图。
具体实施方式
依据本文描述的实施例，无引线半导体封装（诸如QFN（方形扁平无引线）、DFN（双扁平无引线）、TSNP（薄小无引线封装）等）被制造作为引线框架条的部分。无引线半导体封装技术（通常也被称为MLP（微引线框架）和SON（小外形无引线））是用于将集成电路（IC）连接到没有穿孔的印刷电路板（PCB）的表面的表面安装技术。本文描述的无引线半导体封装具有在封装的键合焊盘的底侧处提供的用于在引线框架条加工期间互连键合焊盘以提供稳定性的连接器系杆。键合焊盘的底侧例如用NiPdAu或Ag选择性地预电镀。系杆不被电镀。引线框架条随后被模制。系杆和键合焊盘的底侧不被模制。在模制后连接器系杆随后在键合焊盘和系杆的未模制的底侧处被刻蚀以去除在锯切道区域中的系杆的所有或部分。
这样，在锯切道区域中的后继的锯切期间，只有模制化合物或模制化合物以及至多一薄片系杆通过锯切工艺被切割。这允许在单体化个体封装时比传统采用的方案更快的锯切速度，同时减少金属颗粒以及毛刺的发生。比如锯切速度能够从20mm/s的传统速度增加到300mm/s，使生产量增加到15倍。模制的引线框架条也经受电镀工艺，由此未被模制化合物覆盖的键合焊盘的暴露的侧壁用通过光学检查可检测的材料电镀。该电镀工艺实现在单体化的封装的侧壁处所谓的LTI（引线尖端检查（lead tip inspection））。
包含图1A到1F的图1图解了制造模制半导体封装的方法的分别的部分横截面视图。方法包括提供包含较厚的键合焊盘102的引线框架100，键合焊盘102在键合焊盘102的第一侧106处被较薄的系杆104互连。系杆104具有厚度Ttb并且在引线框架条100的加工期间使键合焊盘102稳定。键合焊盘102能够包含用于附连半导体管芯的管芯座和用于为管芯提供外部电连接的引线。图1A示出引线框架条100的部分。
在一个实施例中，引线框架条100例如通过冲压或刻蚀而由平片状金属构造。比如片状金属能够被暴露于化学刻蚀剂，化学刻蚀剂去除没有被光刻胶覆盖的区域。能够执行其它加工例如激光刻蚀以图案化片状金属。通常用来制造引线框架条的金属包含铜和铜合金（本文通常称为包括铜或铜引线框架条）、通常含有镍或钴或铬的铁合金（本文通常称为包括铁或铁引线框架条）、镍和镍合金（本文通常称为包括镍或镍引线框架条）、以及其它金属材料。在图案化工艺后，图案化的框架被单体化（分离）成引线框架条。在图1A中示出一个这样的引线框架条100的部分。
键合焊盘102的第一侧106用抵抗对系杆104的后继刻蚀的材料108选择性地覆盖。在铜键合焊盘102和系杆104的情形下，键合焊盘102的第一侧106能够用NiPdAu选择性地涂布。在另一个实施例中，在铜键合焊盘102和系杆104的情形下，键合焊盘102的第一侧106也能够用Ag选择性地涂布。取决于构造引线框架条100所用的材料的类型，其它涂层仍可以被选择性地施加到键合焊盘102的第一侧106。比如在铁和镍引线框架条的情形下，相同或不同的涂层108能够被选择性地施加到键合焊盘102的第一侧106以在系杆104的后继的刻蚀期间保护键合焊盘102，如本文以后更详细地描述的。任何标准的引线框架涂布工艺能够被用来保护键合焊盘102的第一侧106。
半导体管芯110和电导体112被附连到与第一侧106相对的键合焊盘102的第二侧114。电导体112能够包含键合线、金属带和/或金属夹。在每个情形下，键合焊盘102的第二侧114能够用诸如Ag的附连材料116涂布，所述附连材料116用于将半导体管芯110和电导体112附连到键合焊盘102，如在图1A和1B中示出的。电导体112能够将引线键合焊盘102连接到另一个引线键合焊盘102或连接到在半导体管芯110之一的顶侧（即背对管芯座键合焊盘102（管芯110被附连到此）的半导体管芯110的侧）处的端子。
图1B示出了在半导体管芯110和电导体112在键合焊盘102的第二侧114处被封闭在模制化合物118中之后的结构。任何标准的模制工艺能够被使用。通常，键合焊盘102的第一侧106以及系杆104的相同侧保持未被模制化合物118覆盖。模制化合物118延伸到在每个封装的邻近管芯座和引线键合焊盘102之间的涂层108的未被覆盖的侧，如在图1B的中间部分示出的，因为在这两个不同类型的焊盘102之间不存在模制化合物118的刻蚀。依据该实施例，模制化合物118完全地覆盖管芯座和引线键合焊盘102中的邻近的管芯座和引线键合焊盘的面对的侧壁。
图1C示出了在刻蚀工艺期间的结构，在刻蚀工艺中在键合焊盘102的被覆盖的第一侧106处在键合焊盘102之间系杆102至少部分地被刻穿。键合焊盘102的第一侧106由材料108保护，所述材料108抵抗对系杆104的刻蚀，如本文先前所描述的。系杆104在键合焊盘102的第一侧106处不被保护。刻蚀工艺能够被控制使得至少50%的系杆104被刻穿。在图1C中示出的实施例中，在键合焊盘102的被覆盖的第一侧106处在键合焊盘102之间系杆104被完全地刻穿。在一个实施例中，系杆104通过在键合焊盘102的被覆盖的第一侧106处在键合焊盘102之间将来自喷嘴122的化学刻蚀剂120指向系杆104而被刻蚀。在铜键合焊盘102和系杆104的情形下，化学刻蚀剂120能够包含氯化铵或氯化铜。在铁或镍键合焊盘102和系杆104的情形下，不同的化学刻蚀剂120能够被使用。化学刻蚀剂120优选地是各向异性的，但能够是各向同性的。适合于不同金属和合金的化学刻蚀剂是广泛已知的，并且因此在这点上不提供进一步解释。
在图1方法中的这一点上，系杆104不再将管芯焊盘102固定在位。替代地，模制化合物118提供足够的稳定性。
图1D示出了在未被模制化合物118覆盖的键合焊盘102的暴露侧壁124的电镀之后的结构。系杆104在先前阶段中被完全刻蚀掉，并且因此依据该实施例键合焊盘102的暴露侧壁124通过无电沉积被电镀。无电电镀（也被称为化学或自动催化电镀）是涉及在水溶液中的若干同时反应的非流电电镀方法，其在不使用外部电源的情况下发生。在一个实施例中，未被模制化合物118覆盖的键合焊盘102的暴露侧壁124用NiPAu无电电镀。银层、金层和铜层也能够通过无电沉积被电镀。
在图1D中封装仍必须被单体化，但是锯切道用虚线框示出以指示锯切将后继地在何处发生。如在图1D中能够看出的，模制化合物118邻近每个封装的最外键合焊盘102的外侧壁124更薄（Tmc1）并且向内更薄（Tmc2）。照此，镀层126沿这些键合焊盘102的外侧壁124进一步延伸，从而提供用于在单体化的封装的各侧处的LTI（引线尖端检查）的额外的电镀表面区域。图1E示出了在锯切工艺期间的结构。模制化合物118在系杆104先前被刻蚀的不同区中被切穿以形成分离的封装。依据该实施例只有模制化合物118被锯条切割，因为系杆104被本文先前描述的刻蚀工艺完全地去除。刻蚀掉系杆104允许在单体化个体封装时比传统采用的方案更快的锯切速度，同时减少金属颗粒和毛刺的发生。比如锯切速度能够从20mm/s增加到300mm/s，使生产量增加到15倍。任何标准的锯切工艺能够被用来单体化个体封装。
图1F示出了单体化封装130之一。依据该实施例，至少键合焊盘102的暴露侧壁124是平面的并且电镀的。也依据该实施例，与沿着其它键合焊盘侧壁124相比，镀层126沿最外键合焊盘102的外侧壁124进一步延伸以提供用于在单体化的封装130的横向侧处的LTI的额外的电镀表面区域。模制化合物118的底侧132也与背对键合焊盘102的涂层108的侧是平面的，因为模制化合物118不受先前用来去除系杆104的刻蚀工艺影响。如在图1F中也能够看出，模制化合物118具有在模制化合物118的底侧132和顶侧136之间延伸并且与最外管芯焊盘102间隔开的横向边缘134。在模制化合物118的底侧132和顶侧136之间的厚度在键合焊盘102中的邻近键合焊盘之间更大（Tmc2）并且在模制化合物118的横向边缘134和最外键合焊盘102之间更薄（Tmc1）。
图2示出了通过诸如焊料的附连材料142附连到PCB 140的图1F的单体化的封装130。在单体化的封装130的邻近的管芯座和引线键合焊盘102之间不存在间隙（standoff）（如在图2的中间部分示出的），因为不存在这些焊盘102之间的模制化合物118的刻蚀（如先前本文所描述的）。未被模制化合物118覆盖的键合焊盘102的暴露侧壁124用通过光学检查可检测的材料126电镀，如本文先前所描述的。侧壁镀层126实现在附连到PCB 140之后单体化的封装130的横向侧处的LTI（如在图2中通过面向内的虚箭头指示的）以确保封装130被适当地结合到PCB 140。
包含图3A到图3G的图3图解了制造模制半导体封装的方法的另一个实施例的分别的部分横截面视图。图3A和3B分别等同于图1A和1B，并且因此在这点上没有给出进一步解释。
图3C示出了在刻蚀工艺期间的结构，在刻蚀工艺中在键合焊盘102的被覆盖的第一侧106处在键合焊盘102之间系杆104被部分地刻穿。键合焊盘102的第一侧106被材料108保护，所述材料108抵抗对系杆104的刻蚀，如本文先前所描述的。系杆104在键合焊盘102的第一侧106处不被保护。在图3C中示出的实施例中，系杆104被部分地刻蚀使得系杆104保持完好但是变薄至少50%并且小于100%。在一个实施例中，系杆104通过在键合焊盘102的被覆盖的第一侧106处在键合焊盘102之间将来自喷嘴122的化学刻蚀剂120指向系杆104而被刻蚀。喷嘴122的速度（运动）和暴露时间能够被控制使得系杆104没有完全地被刻穿。
在图2方法中的这点上，系杆104的薄层104’保持连接在键合焊盘102中的邻近键合焊盘之间。
图3D示出了在未被模制化合物118覆盖的键合焊盘102的暴露侧壁124的电镀之后的结构。依据该实施例系杆104在刻蚀之后保持完好，使得键合焊盘102的暴露侧壁124能够通过比无电沉积更快并且成本更少的电解沉积而电镀。关于电解沉积，电解电池（包含两个电极、电解质、以及外部电流源）通常可以被用于电沉积。在一个实施例中，未被模制化合物118覆盖的键合焊盘102的暴露侧壁124通过电解沉积用NiPAu电镀。锡、银、金、铜、镍和合金能够替代地通过电解沉积被施加。关于电解沉积和无电沉积两者，称为冲击镀（strike）或闪镀（flash）的特殊电镀沉积物能够被用来形成非常薄的（通常小于0.1微米厚）镀层，该镀层带有高质量以及到未被模制化合物118覆盖的键合焊盘102的暴露侧壁124的良好的粘附。
如在图3D中能够看出的，模制化合物118邻近每个封装的最外键合焊盘102的外侧壁124更薄（Tmc1）并且向内更薄（Tmc2），因为不存在邻近的管芯座和引线键合焊盘102之间的模制化合物118的刻蚀（如先前本文所描述的）。照此，镀层126沿最外键合焊盘102的外侧壁124进一步延伸，从而提供用于在单体化的封装的横向侧处的LTI的额外的电镀的表面区域。
图3E示出了在锯切工艺期间的结构。模制化合物118在系杆104先前被刻蚀的不同区中被切穿以形成分离的封装。依据该实施例，薄的剩余系杆层104’也通过锯切被切割。刻蚀掉至少50%并且小于100%的系杆104允许在单体化个体封装时比传统采用的方案更快的锯切速度，同时减少金属颗粒和毛刺的发生，因为只有薄的金属层104’被锯切。
图3F示出了单体化封装200之一。依据该实施例，与沿着其它键合焊盘侧壁124相比，镀层126沿最外键合焊盘102的外侧壁124进一步延伸以提供用于在单体化封装200的横向侧处的LTI的额外的电镀的表面区域。模制化合物118的底侧132与背对键合焊盘102的涂层108的侧是平面的，因为模制化合物118不受系杆刻蚀工艺影响。而且如在图3F中能够看出的，模制化合物118具有在模制化合物118的底侧132和顶侧136之间延伸并且与最外管芯焊盘102间隔开的横向边缘134。模制化合物118的底侧132和顶侧136之间的厚度在键合焊盘102中的邻近键合焊盘之间更大（Tmc2）并且在模制化合物118的横向边缘134和最外键合焊盘102之间更薄（Tmc1）。切断的横向凸出202能够在锯切工艺之后保留作为薄的（刻蚀的）系杆层104’的剩余物，并且从最外键合焊盘102延伸到模制化合物118的横向边缘134。
图4示出了通过诸如焊料的附连材料142附连到PCB 140的图3F的单体化封装200。未被模制化合物118覆盖的键合焊盘102的暴露侧壁124用通过光学检查可检测的材料126电镀，如本文先前所描述的。侧壁镀层126实现在附连到PCB 140之后单体化的封装130的横向侧处的LTI（如在图4中通过面向内的虚箭头指示的）以确保封装200被适当地结合到PCB 140。如同在图2中示出的单体化的封装130一样，在单体化的封装200的邻近管芯座和引线键合焊盘102之间不存在间隙（如在图4的中间部分示出的），因为不存在这些焊盘102之间的模制化合物118的刻蚀（如先前本文所描述的）。
为了方便描述，空间相对的术语诸如“在...下”、“在...以下”、“下”、“在..之上”、“上”等等被用来解释一个元件相对于第二元件的定位。这些术语意在涵盖器件的不同定向，除了与在图中描绘的那些不同的定向之外。进一步地，术语诸如“第一”、“第二”等等也被用来描述各种元件、区、部分等，并且也不意在进行限制。贯穿本描述，相似的术语指代相似的元件。
如本文使用的术语“具有”、“含有”、“包含”、“包括”等等是开放型的术语，其指示所述元件或特征的存在但是没有排除额外的元件或特征。冠词“一”、“一个”和“该”意在包含复数以及单数，除非上下文另外清楚地指示。
考虑到变化和应用的以上范围，应该理解的是，本发明不受先前的描述所限制，也不受附图所限制。替代地，本发明只受所附的权利要求及其法律等价物限制。

Claims (20)

1.一种制造模制半导体封装的方法，所述方法包括：
提供引线框架，所述引线框架包括多个较厚的键合焊盘，所述多个较厚的键合焊盘在键合焊盘的第一侧处被较薄的系杆互连；
用抵抗对系杆的刻蚀的材料覆盖键合焊盘的第一侧；
将半导体管芯和电导体附连到与第一侧相对的键合焊盘的第二侧；
在键合焊盘的第二侧处将半导体管芯和电导体封闭在模制化合物中；
在键合焊盘的被覆盖的第一侧处在键合焊盘之间至少部分地刻穿系杆；
电镀未被模制化合物覆盖的键合焊盘的暴露侧壁；并且
在系杆先前被刻蚀的不同区中切穿模制化合物以形成分离的封装。
2.权利要求1的所述方法，其中用抵抗对系杆的刻蚀的材料覆盖键合焊盘的第一侧包括：用NiPdAu涂布键合焊盘的第一侧。
3.权利要求1的所述方法，其中用抵抗对系杆的刻蚀的材料覆盖键合焊盘的第一侧包括：用Ag涂布键合焊盘的第一侧。
4.权利要求1的所述方法，其中将半导体管芯和电导体附连到键合焊盘的第二侧包括：
用Ag涂布键合焊盘的第二侧；并且
将半导体管芯和电导体经由Ag附连到键合焊盘的第二侧。
5.权利要求1的所述方法，其中在键合焊盘的被覆盖的第一侧处在键合焊盘之间完全地刻穿系杆。
6.权利要求5的所述方法，其中键合焊盘的暴露侧壁通过无电沉积被电镀。
7.权利要求1的所述方法，其中在键合焊盘的被覆盖的第一侧处在键合焊盘之间部分地刻穿系杆使得系杆保持完好。
8.权利要求7的所述方法，其中键合焊盘的暴露侧壁通过电解沉积被电镀。
9.权利要求1的所述方法，其中键合焊盘的暴露侧壁用NiPAu电镀。
10.权利要求1的所述方法，其中在键合焊盘的被覆盖的第一侧处在键合焊盘之间至少部分地刻穿系杆包括：
在键合焊盘的被覆盖的第一侧处在键合焊盘之间将来自喷嘴的化学刻蚀剂指向系杆。
11.权利要求10的所述方法，其中键合焊盘和系杆包括铜并且化学刻蚀剂包括氯化铵或氯化铜。
12.权利要求1的所述方法，其中键合焊盘中的一些是管芯座并且键合焊盘中的其它一些是引线，并且其中模制化合物延伸到覆盖在管芯座和引线中的邻近的管芯座和引线之间的键合焊盘的第一侧的材料。
13.权利要求12的所述方法，其中模制化合物完全地覆盖管芯座和引线中的邻近的管芯座和引线的面对的侧壁。
14.一种半导体封装，包括：
多个键合焊盘，具有第一侧和与第一侧相对的第二侧；
涂层，覆盖键合焊盘的第一侧；
半导体管芯和电导体，附连到键合焊盘的第二侧；
模制化合物，在键合焊盘的第二侧处封闭半导体管芯和电导体，所述模制化合物具有第一侧和与第一侧相对的第二侧，键合焊盘凸出穿过所述第一侧，模制化合物的第一侧在键合焊盘中的邻近的键合焊盘之间具有平面的表面；以及
电镀在未被模制化合物覆盖的键合焊盘的暴露侧壁上的材料，所述材料通过光学检查是可检测的。
15.权利要求14的所述半导体封装，其中键合焊盘中的最外键合焊盘具有面向外的侧壁，所述面向外的侧壁是平面的并且未被模制化合物覆盖。
16.权利要求14的所述半导体封装，其中覆盖键合焊盘的第一侧的涂层包括NiPdAu。
17.权利要求14的所述半导体封装，其中覆盖键合焊盘的第一侧的涂层包括Ag。
18.权利要求14的所述半导体封装，其中电镀在键合焊盘的暴露侧壁上的所述材料包括NiPAu。
19.权利要求14的所述半导体封装，其中模制化合物具有在模制化合物的第一侧和第二侧之间延伸并且与最外管芯焊盘间隔开的横向边缘，并且其中在模制化合物的第一侧和第二侧之间的厚度在键合焊盘中的邻近的键合焊盘之间比在横向边缘和最外键合焊盘之间更大。
20.权利要求14的所述半导体封装，进一步包括从键合焊盘中的最外一个延伸到模制化合物的横向边缘的切断的横向凸出。
CN201410720997.8A 2013-12-02 2014-12-02 带有光学检查特征的无引线半导体封装 Pending CN104681449A (zh)

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