CN103500735B - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN103500735B CN103500735B CN201310356421.3A CN201310356421A CN103500735B CN 103500735 B CN103500735 B CN 103500735B CN 201310356421 A CN201310356421 A CN 201310356421A CN 103500735 B CN103500735 B CN 103500735B
- Authority
- CN
- China
- Prior art keywords
- semiconductor chip
- pattern
- wiring
- heat dissipation
- wiring substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structure Of Printed Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-166975 | 2009-07-15 | ||
| JP2009166975A JP5325684B2 (ja) | 2009-07-15 | 2009-07-15 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010222675.2A Division CN101958295B (zh) | 2009-07-15 | 2010-06-30 | 半导体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103500735A CN103500735A (zh) | 2014-01-08 |
| CN103500735B true CN103500735B (zh) | 2015-05-06 |
Family
ID=43464699
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310356421.3A Active CN103500735B (zh) | 2009-07-15 | 2010-06-30 | 半导体装置 |
| CN201410486030.8A Active CN104332454B (zh) | 2009-07-15 | 2010-06-30 | 半导体装置 |
| CN201410239237.5A Active CN104037156B (zh) | 2009-07-15 | 2010-06-30 | 半导体装置 |
| CN201010222675.2A Active CN101958295B (zh) | 2009-07-15 | 2010-06-30 | 半导体装置 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410486030.8A Active CN104332454B (zh) | 2009-07-15 | 2010-06-30 | 半导体装置 |
| CN201410239237.5A Active CN104037156B (zh) | 2009-07-15 | 2010-06-30 | 半导体装置 |
| CN201010222675.2A Active CN101958295B (zh) | 2009-07-15 | 2010-06-30 | 半导体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (5) | US8384230B2 (enExample) |
| JP (1) | JP5325684B2 (enExample) |
| CN (4) | CN103500735B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5325684B2 (ja) | 2009-07-15 | 2013-10-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP5405679B2 (ja) * | 2013-01-25 | 2014-02-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2016115751A (ja) * | 2014-12-12 | 2016-06-23 | ラピスセミコンダクタ株式会社 | 半導体パッケージ |
| CN109068967B (zh) * | 2016-05-10 | 2020-12-25 | 奥林巴斯株式会社 | 电子电路单元、摄像单元、摄像模块以及内窥镜 |
| JP7025948B2 (ja) * | 2018-02-13 | 2022-02-25 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| KR102628847B1 (ko) * | 2019-06-12 | 2024-01-25 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
| JP6973861B2 (ja) * | 2019-08-28 | 2021-12-01 | Necプラットフォームズ株式会社 | 半導体装置、電子機器及び半導体装置の製造方法 |
| TWI873949B (zh) * | 2022-11-11 | 2025-02-21 | 財團法人工業技術研究院 | 模塑電子組件 |
| JP2024169133A (ja) * | 2023-05-25 | 2024-12-05 | オムロン株式会社 | 基板及びモジュール |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004111996A (ja) * | 1996-03-26 | 2004-04-08 | Canon Inc | 接続構造体及び表示装置 |
Family Cites Families (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6484625A (en) * | 1987-09-28 | 1989-03-29 | Toshiba Corp | Semiconductor integrated circuit device using film carrier |
| US4961107A (en) * | 1989-04-03 | 1990-10-02 | Motorola Inc. | Electrically isolated heatsink for single-in-line package |
| JP2000174075A (ja) | 1991-09-20 | 2000-06-23 | Hitachi Ltd | 液晶ドライバ用テ―プキャリアパッケ―ジ及び液晶表示装置 |
| JPH06252285A (ja) * | 1993-02-24 | 1994-09-09 | Fuji Xerox Co Ltd | 回路基板 |
| US6683594B1 (en) * | 1995-04-20 | 2004-01-27 | Canon Kabushiki Kaisha | Display apparatus and assembly of its driving circuit |
| EP0751413B1 (en) | 1995-06-30 | 2003-09-17 | Eastman Kodak Company | Zoom lens apparatus |
| US6497477B1 (en) * | 1998-11-04 | 2002-12-24 | Matsushita Electric Industrial Co., Ltd. | Ink-jet head mounted with a driver IC, method for manufacturing thereof and ink-jet printer having the same |
| KR100404997B1 (ko) | 1999-03-11 | 2003-11-10 | 세이코 엡슨 가부시키가이샤 | 가요성 배선 기판, 필름 캐리어, 테이프형 반도체장치,반도체장치 및 그 제조방법, 회로기판 및 전자기기 |
| JP3666318B2 (ja) * | 1999-09-27 | 2005-06-29 | セイコーエプソン株式会社 | 電気光学装置及びそれを用いた電子機器並びに表示駆動ic |
| JP2002093861A (ja) | 2000-09-12 | 2002-03-29 | Mitsui Mining & Smelting Co Ltd | 2メタルtab及び両面csp、bgaテープ、並びにその製造方法 |
| JP3536023B2 (ja) * | 2000-10-13 | 2004-06-07 | シャープ株式会社 | Cof用テープキャリアおよびこれを用いて製造されるcof構造の半導体装置 |
| JP2003068804A (ja) | 2001-08-22 | 2003-03-07 | Mitsui Mining & Smelting Co Ltd | 電子部品実装用基板 |
| JP4176979B2 (ja) * | 2001-09-27 | 2008-11-05 | パイオニア株式会社 | フラットパネル型表示装置 |
| JP3748075B2 (ja) * | 2002-08-30 | 2006-02-22 | セイコーエプソン株式会社 | 電子モジュール及びその製造方法並びに電子機器 |
| JP4776861B2 (ja) * | 2002-09-26 | 2011-09-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2004207296A (ja) | 2002-12-24 | 2004-07-22 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| JP2004296998A (ja) * | 2003-03-28 | 2004-10-21 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JP4689202B2 (ja) * | 2004-07-07 | 2011-05-25 | ルネサスエレクトロニクス株式会社 | 駆動装置及び表示装置 |
| JP4573103B2 (ja) | 2004-11-24 | 2010-11-04 | Okiセミコンダクタ株式会社 | チップオンフィルム用フィルムキャリアおよびそれを用いた半導体装置 |
| KR100632807B1 (ko) * | 2004-11-26 | 2006-10-16 | 삼성전자주식회사 | 반도체 칩 및 그를 포함하는 탭 패키지 |
| JP4485460B2 (ja) * | 2004-12-16 | 2010-06-23 | 三井金属鉱業株式会社 | フレキシブルプリント配線板 |
| JP2006269496A (ja) * | 2005-03-22 | 2006-10-05 | Mitsui Mining & Smelting Co Ltd | フレキシブルプリント配線基板、および半導体装置 |
| JP2006286837A (ja) * | 2005-03-31 | 2006-10-19 | Toyoda Gosei Co Ltd | Led装置 |
| KR100652519B1 (ko) | 2005-07-18 | 2006-12-01 | 삼성전자주식회사 | 듀얼 금속층을 갖는 테이프 배선기판 및 그를 이용한 칩 온필름 패키지 |
| JP4781097B2 (ja) * | 2005-12-05 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | テープキャリアパッケージ及びそれを搭載した表示装置 |
| KR100987479B1 (ko) * | 2005-12-19 | 2010-10-13 | 삼성전자주식회사 | 반도체 칩 및 이를 이용한 반도체 칩 패키지 |
| KR100681398B1 (ko) * | 2005-12-29 | 2007-02-15 | 삼성전자주식회사 | 열방출형 반도체 칩과 테이프 배선기판 및 그를 이용한테이프 패키지 |
| KR100729537B1 (ko) | 2006-02-28 | 2007-06-18 | 주식회사 탑 엔지니어링 | 본딩 장비의 테잎 피딩 방법 |
| JP4806313B2 (ja) * | 2006-08-18 | 2011-11-02 | Nec液晶テクノロジー株式会社 | テープキャリア、液晶表示装置用テープキャリア、及び液晶表示装置 |
| JP4283292B2 (ja) | 2006-09-08 | 2009-06-24 | シャープ株式会社 | 半導体装置用テープキャリア、および半導体装置の製造方法 |
| TWI317547B (en) * | 2006-10-14 | 2009-11-21 | Chipmos Technologies Inc | Substrate with heat-dissipating dummy pattern for semiconductor packages |
| JP4143666B2 (ja) | 2006-12-08 | 2008-09-03 | シャープ株式会社 | Icチップ実装パッケージ、及びこれを備えた画像表示装置 |
| JP5273333B2 (ja) * | 2006-12-28 | 2013-08-28 | 株式会社ジャパンディスプレイ | 表示装置 |
| TWI337402B (en) * | 2007-01-03 | 2011-02-11 | Chipmos Technologies Inc | Semiconductor packaging substrate improving capability of electrostatic dissipation |
| JP4185954B2 (ja) * | 2007-01-19 | 2008-11-26 | シャープ株式会社 | フレキシブル基板及び半導体装置 |
| JP2008205142A (ja) * | 2007-02-20 | 2008-09-04 | Sumitomo Metal Mining Package Materials Co Ltd | Cof用配線基板とその製造方法、並びに半導体装置 |
| JP4378387B2 (ja) | 2007-02-27 | 2009-12-02 | Okiセミコンダクタ株式会社 | 半導体パッケージ及びその製造方法 |
| JP4983386B2 (ja) * | 2007-05-15 | 2012-07-25 | 住友金属鉱山株式会社 | Cof用配線基板 |
| US20090020316A1 (en) * | 2007-07-19 | 2009-01-22 | Chia-Hui Wu | Method of manufacturing chip on film and structure thereof |
| JP4975584B2 (ja) * | 2007-10-26 | 2012-07-11 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法。 |
| JP4344766B2 (ja) * | 2007-11-30 | 2009-10-14 | シャープ株式会社 | ソースドライバ、ソースドライバの製造方法、および液晶モジュール |
| JP5325684B2 (ja) | 2009-07-15 | 2013-10-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2009
- 2009-07-15 JP JP2009166975A patent/JP5325684B2/ja active Active
-
2010
- 2010-06-02 US US12/801,303 patent/US8384230B2/en active Active
- 2010-06-30 CN CN201310356421.3A patent/CN103500735B/zh active Active
- 2010-06-30 CN CN201410486030.8A patent/CN104332454B/zh active Active
- 2010-06-30 CN CN201410239237.5A patent/CN104037156B/zh active Active
- 2010-06-30 CN CN201010222675.2A patent/CN101958295B/zh active Active
-
2013
- 2013-02-08 US US13/762,512 patent/US8686574B2/en active Active
-
2014
- 2014-02-21 US US14/186,592 patent/US8975762B2/en active Active
-
2015
- 2015-01-14 US US14/596,991 patent/US20150123274A1/en not_active Abandoned
-
2019
- 2019-10-31 US US16/670,725 patent/US11244883B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004111996A (ja) * | 1996-03-26 | 2004-04-08 | Canon Inc | 接続構造体及び表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103500735A (zh) | 2014-01-08 |
| US20130147039A1 (en) | 2013-06-13 |
| US8686574B2 (en) | 2014-04-01 |
| CN104037156B (zh) | 2019-01-11 |
| US8384230B2 (en) | 2013-02-26 |
| US20200066611A1 (en) | 2020-02-27 |
| CN104037156A (zh) | 2014-09-10 |
| US8975762B2 (en) | 2015-03-10 |
| US20140167258A1 (en) | 2014-06-19 |
| CN104332454A (zh) | 2015-02-04 |
| US20150123274A1 (en) | 2015-05-07 |
| JP2011023528A (ja) | 2011-02-03 |
| HK1199554A1 (en) | 2015-07-03 |
| US11244883B2 (en) | 2022-02-08 |
| HK1204507A1 (en) | 2015-11-20 |
| CN101958295B (zh) | 2014-10-01 |
| JP5325684B2 (ja) | 2013-10-23 |
| US20110012265A1 (en) | 2011-01-20 |
| CN104332454B (zh) | 2017-04-12 |
| CN101958295A (zh) | 2011-01-26 |
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