CN103028270B - 蒸汽递送容器和在容器内提供可汽化源材料的方法 - Google Patents
蒸汽递送容器和在容器内提供可汽化源材料的方法 Download PDFInfo
- Publication number
- CN103028270B CN103028270B CN201210532357.5A CN201210532357A CN103028270B CN 103028270 B CN103028270 B CN 103028270B CN 201210532357 A CN201210532357 A CN 201210532357A CN 103028270 B CN103028270 B CN 103028270B
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- China
- Prior art keywords
- support
- container
- gas
- vaporized
- support structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S261/00—Gas and liquid contact apparatus
- Y10S261/65—Vaporizers
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/858,509 | 2004-06-01 | ||
| US10/858,509 US7300038B2 (en) | 2002-07-23 | 2004-06-01 | Method and apparatus to help promote contact of gas with vaporized material |
| CNA2005800259208A CN1993172A (zh) | 2004-06-01 | 2005-06-01 | 有助于增进气体与汽化材料接触的方法和装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005800259208A Division CN1993172A (zh) | 2004-06-01 | 2005-06-01 | 有助于增进气体与汽化材料接触的方法和装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103028270A CN103028270A (zh) | 2013-04-10 |
| CN103028270B true CN103028270B (zh) | 2015-10-28 |
Family
ID=35462761
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210534049.6A Expired - Lifetime CN103031542B (zh) | 2004-06-01 | 2005-06-01 | 用于递送汽化源材料的装置 |
| CNA2005800259208A Pending CN1993172A (zh) | 2004-06-01 | 2005-06-01 | 有助于增进气体与汽化材料接触的方法和装置 |
| CN201210532357.5A Expired - Lifetime CN103028270B (zh) | 2004-06-01 | 2005-06-01 | 蒸汽递送容器和在容器内提供可汽化源材料的方法 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210534049.6A Expired - Lifetime CN103031542B (zh) | 2004-06-01 | 2005-06-01 | 用于递送汽化源材料的装置 |
| CNA2005800259208A Pending CN1993172A (zh) | 2004-06-01 | 2005-06-01 | 有助于增进气体与汽化材料接触的方法和装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US7300038B2 (enExample) |
| EP (2) | EP2363199A1 (enExample) |
| JP (3) | JP5342139B2 (enExample) |
| KR (2) | KR101181011B1 (enExample) |
| CN (3) | CN103031542B (enExample) |
| AT (1) | ATE530249T1 (enExample) |
| SG (3) | SG10201507473RA (enExample) |
| WO (1) | WO2005118119A1 (enExample) |
Families Citing this family (178)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7194197B1 (en) * | 2000-03-16 | 2007-03-20 | Global Solar Energy, Inc. | Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer |
| FI117979B (fi) | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
| US6620723B1 (en) * | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US6936538B2 (en) | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
| US7964505B2 (en) * | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
| US6551929B1 (en) * | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| US7405158B2 (en) * | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
| US6878206B2 (en) * | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US20070009658A1 (en) * | 2001-07-13 | 2007-01-11 | Yoo Jong H | Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process |
| US7211144B2 (en) * | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| WO2003029515A2 (en) | 2001-07-16 | 2003-04-10 | Applied Materials, Inc. | Formation of composite tungsten films |
| US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
| US20080268635A1 (en) * | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
| US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| US8110489B2 (en) * | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| WO2003030224A2 (en) | 2001-07-25 | 2003-04-10 | Applied Materials, Inc. | Barrier formation using novel sputter-deposition method |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US6936906B2 (en) * | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| TW589684B (en) * | 2001-10-10 | 2004-06-01 | Applied Materials Inc | Method for depositing refractory metal layers employing sequential deposition techniques |
| US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
| US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US7081271B2 (en) | 2001-12-07 | 2006-07-25 | Applied Materials, Inc. | Cyclical deposition of refractory metal silicon nitride |
| WO2003065424A2 (en) * | 2002-01-25 | 2003-08-07 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
| US6833161B2 (en) * | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US6972267B2 (en) * | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
| US6846516B2 (en) * | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
| KR100476556B1 (ko) * | 2002-04-11 | 2005-03-18 | 삼성전기주식회사 | 압전트랜스 장치, 압전트랜스 하우징 및 그 제조방법 |
| US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
| US7404985B2 (en) | 2002-06-04 | 2008-07-29 | Applied Materials, Inc. | Noble metal layer formation for copper film deposition |
| US7264846B2 (en) * | 2002-06-04 | 2007-09-04 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
| US7910165B2 (en) * | 2002-06-04 | 2011-03-22 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
| US6858547B2 (en) * | 2002-06-14 | 2005-02-22 | Applied Materials, Inc. | System and method for forming a gate dielectric |
| US20030232501A1 (en) * | 2002-06-14 | 2003-12-18 | Kher Shreyas S. | Surface pre-treatment for enhancement of nucleation of high dielectric constant materials |
| US6686595B2 (en) * | 2002-06-26 | 2004-02-03 | Semequip Inc. | Electron impact ion source |
| WO2004003973A2 (en) * | 2002-06-26 | 2004-01-08 | Semequip Inc. | Ion implantation device and method |
| US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
| US7300038B2 (en) * | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
| US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| US6915592B2 (en) * | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
| US20040065255A1 (en) * | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
| US20040069227A1 (en) * | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
| US6905737B2 (en) * | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
| EP1420080A3 (en) | 2002-11-14 | 2005-11-09 | Applied Materials, Inc. | Apparatus and method for hybrid chemical deposition processes |
| US6868869B2 (en) * | 2003-02-19 | 2005-03-22 | Advanced Technology Materials, Inc. | Sub-atmospheric pressure delivery of liquids, solids and low vapor pressure gases |
| US20040177813A1 (en) | 2003-03-12 | 2004-09-16 | Applied Materials, Inc. | Substrate support lift mechanism |
| WO2004088415A2 (en) * | 2003-03-28 | 2004-10-14 | Advanced Technology Materials Inc. | Photometrically modulated delivery of reagents |
| US7063097B2 (en) * | 2003-03-28 | 2006-06-20 | Advanced Technology Materials, Inc. | In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration |
| US20040198069A1 (en) * | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
| JP2007523994A (ja) * | 2003-06-18 | 2007-08-23 | アプライド マテリアルズ インコーポレイテッド | バリヤ物質の原子層堆積 |
| US6909839B2 (en) * | 2003-07-23 | 2005-06-21 | Advanced Technology Materials, Inc. | Delivery systems for efficient vaporization of precursor source material |
| US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
| US20050252449A1 (en) * | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
| US20060153995A1 (en) * | 2004-05-21 | 2006-07-13 | Applied Materials, Inc. | Method for fabricating a dielectric stack |
| US20060019033A1 (en) * | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
| US20060062917A1 (en) * | 2004-05-21 | 2006-03-23 | Shankar Muthukrishnan | Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane |
| US8119210B2 (en) * | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
| US8323754B2 (en) * | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
| US7241686B2 (en) * | 2004-07-20 | 2007-07-10 | Applied Materials, Inc. | Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA |
| US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
| US7791216B2 (en) * | 2004-11-01 | 2010-09-07 | Ford Global Technologies, Llc | Method and system for use with a vehicle electric storage system |
| US20060185597A1 (en) * | 2004-11-29 | 2006-08-24 | Kenji Suzuki | Film precursor evaporation system and method of using |
| US7708835B2 (en) * | 2004-11-29 | 2010-05-04 | Tokyo Electron Limited | Film precursor tray for use in a film precursor evaporation system and method of using |
| US7638002B2 (en) * | 2004-11-29 | 2009-12-29 | Tokyo Electron Limited | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
| US7488512B2 (en) * | 2004-11-29 | 2009-02-10 | Tokyo Electron Limited | Method for preparing solid precursor tray for use in solid precursor evaporation system |
| US7484315B2 (en) * | 2004-11-29 | 2009-02-03 | Tokyo Electron Limited | Replaceable precursor tray for use in a multi-tray solid precursor delivery system |
| US7429402B2 (en) | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
| US7265048B2 (en) | 2005-03-01 | 2007-09-04 | Applied Materials, Inc. | Reduction of copper dewetting by transition metal deposition |
| JP4922286B2 (ja) * | 2005-03-16 | 2012-04-25 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | イオン注入システム及びフッ素化学物質供給源並びに二フッ化キセノン供給方法 |
| US7651570B2 (en) * | 2005-03-31 | 2010-01-26 | Tokyo Electron Limited | Solid precursor vaporization system for use in chemical vapor deposition |
| TWI552797B (zh) | 2005-06-22 | 2016-10-11 | 恩特葛瑞斯股份有限公司 | 整合式氣體混合用之裝置及方法 |
| DE102005030862B4 (de) * | 2005-07-01 | 2009-12-24 | Sintec Keramik Gmbh | Erstbenetzungshilfsmaterial für einen Verdampferkörper, seine Verwendung zum Herrichten der Verdampferfläche eines Verdampferkörpers und ein elektrisch beheizbarer keramischer Verdampferkörper |
| US20070020890A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Method and apparatus for semiconductor processing |
| US20070049043A1 (en) * | 2005-08-23 | 2007-03-01 | Applied Materials, Inc. | Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement |
| US7402534B2 (en) * | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
| KR101297917B1 (ko) | 2005-08-30 | 2013-08-27 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 대안적인 불화 붕소 전구체를 이용한 붕소 이온 주입 방법,및 주입을 위한 대형 수소화붕소의 형성 방법 |
| US20070065578A1 (en) * | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
| US7464917B2 (en) | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
| US20070099422A1 (en) * | 2005-10-28 | 2007-05-03 | Kapila Wijekoon | Process for electroless copper deposition |
| KR101019293B1 (ko) * | 2005-11-04 | 2011-03-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마-강화 원자층 증착 장치 및 방법 |
| GB2432371B (en) | 2005-11-17 | 2011-06-15 | Epichem Ltd | Improved bubbler for the transportation of substances by a carrier gas |
| US8603580B2 (en) * | 2005-11-28 | 2013-12-10 | Msp Corporation | High stability and high capacity precursor vapor generation for thin film deposition |
| WO2007106788A2 (en) | 2006-03-10 | 2007-09-20 | Advanced Technology Materials, Inc. | Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films |
| US7562672B2 (en) | 2006-03-30 | 2009-07-21 | Applied Materials, Inc. | Chemical delivery apparatus for CVD or ALD |
| US8951478B2 (en) * | 2006-03-30 | 2015-02-10 | Applied Materials, Inc. | Ampoule with a thermally conductive coating |
| US7833358B2 (en) * | 2006-04-07 | 2010-11-16 | Applied Materials, Inc. | Method of recovering valuable material from exhaust gas stream of a reaction chamber |
| US20070252299A1 (en) * | 2006-04-27 | 2007-11-01 | Applied Materials, Inc. | Synchronization of precursor pulsing and wafer rotation |
| US7798096B2 (en) * | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
| US20070259111A1 (en) * | 2006-05-05 | 2007-11-08 | Singh Kaushal K | Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
| WO2007142700A1 (en) * | 2006-06-02 | 2007-12-13 | Advanced Technology Materials, Inc. | Copper (i) amidinates and guanidinates for forming copper thin films |
| US20080018004A1 (en) * | 2006-06-09 | 2008-01-24 | Air Products And Chemicals, Inc. | High Flow GaCl3 Delivery |
| JP5558815B2 (ja) * | 2006-06-30 | 2014-07-23 | アプライド マテリアルズ インコーポレイテッド | ナノ結晶の形成 |
| US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
| US7521379B2 (en) * | 2006-10-09 | 2009-04-21 | Applied Materials, Inc. | Deposition and densification process for titanium nitride barrier layers |
| JP5073751B2 (ja) * | 2006-10-10 | 2012-11-14 | エーエスエム アメリカ インコーポレイテッド | 前駆体送出システム |
| US9109287B2 (en) * | 2006-10-19 | 2015-08-18 | Air Products And Chemicals, Inc. | Solid source container with inlet plenum |
| US7775508B2 (en) * | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
| GB2444143B (en) * | 2006-11-27 | 2009-10-28 | Sumitomo Chemical Co | Apparatus of supplying organometallic compound |
| US8708320B2 (en) | 2006-12-15 | 2014-04-29 | Air Products And Chemicals, Inc. | Splashguard and inlet diffuser for high vacuum, high flow bubbler vessel |
| US20080141937A1 (en) * | 2006-12-19 | 2008-06-19 | Tokyo Electron Limited | Method and system for controlling a vapor delivery system |
| US8524931B2 (en) * | 2007-01-17 | 2013-09-03 | Advanced Technology Materials, Inc. | Precursor compositions for ALD/CVD of group II ruthenate thin films |
| US8821637B2 (en) * | 2007-01-29 | 2014-09-02 | Applied Materials, Inc. | Temperature controlled lid assembly for tungsten nitride deposition |
| US7846256B2 (en) * | 2007-02-23 | 2010-12-07 | Tokyo Electron Limited | Ampule tray for and method of precursor surface area |
| US7678298B2 (en) * | 2007-09-25 | 2010-03-16 | Applied Materials, Inc. | Tantalum carbide nitride materials by vapor deposition processes |
| GB0718801D0 (en) * | 2007-09-25 | 2007-11-07 | P2I Ltd | Vapour delivery system |
| US7585762B2 (en) * | 2007-09-25 | 2009-09-08 | Applied Materials, Inc. | Vapor deposition processes for tantalum carbide nitride materials |
| US7737028B2 (en) * | 2007-09-28 | 2010-06-15 | Applied Materials, Inc. | Selective ruthenium deposition on copper materials |
| US7824743B2 (en) * | 2007-09-28 | 2010-11-02 | Applied Materials, Inc. | Deposition processes for titanium nitride barrier and aluminum |
| US9034105B2 (en) * | 2008-01-10 | 2015-05-19 | American Air Liquide, Inc. | Solid precursor sublimator |
| KR101822779B1 (ko) | 2008-02-11 | 2018-01-26 | 엔테그리스, 아이엔씨. | 반도체 가공 시스템에서의 이온 공급원 세정법 |
| CN101960564B (zh) * | 2008-03-17 | 2012-11-21 | 应用材料公司 | 用于安瓿的加热阀歧管 |
| US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
| US8491967B2 (en) * | 2008-09-08 | 2013-07-23 | Applied Materials, Inc. | In-situ chamber treatment and deposition process |
| US20100062149A1 (en) | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
| US20100095892A1 (en) * | 2008-10-22 | 2010-04-22 | Applied Materials, Inc. | Evaporator device, method of mounting an evaporator device, method of operating an evaporator device, and coating device |
| US8146896B2 (en) | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
| WO2010056576A1 (en) * | 2008-11-11 | 2010-05-20 | Praxair Technology, Inc. | Reagent dispensing apparatuses and delivery methods |
| US20100116208A1 (en) * | 2008-11-13 | 2010-05-13 | Applied Materials, Inc. | Ampoule and delivery system for solid precursors |
| US8663735B2 (en) * | 2009-02-13 | 2014-03-04 | Advanced Technology Materials, Inc. | In situ generation of RuO4 for ALD of Ru and Ru related materials |
| US8574675B2 (en) | 2009-03-17 | 2013-11-05 | Advanced Technology Materials, Inc. | Method and composition for depositing ruthenium with assistive metal species |
| WO2010124174A2 (en) * | 2009-04-24 | 2010-10-28 | Applied Materials, Inc. | Ampoule with integrated hybrid valve |
| US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| CN102597310B (zh) * | 2009-11-02 | 2015-02-04 | 西格玛-奥吉奇有限责任公司 | 固态前体输送组件以及相关方法 |
| JP5913888B2 (ja) * | 2011-09-30 | 2016-04-27 | 国立大学法人東北大学 | 気化器 |
| US8724974B2 (en) | 2011-09-30 | 2014-05-13 | Fujikin Incorporated | Vaporizer |
| US20130105483A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Apparatus for sublimating solid state precursors |
| JP6156972B2 (ja) * | 2012-04-06 | 2017-07-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、気化システムおよびミストフィルタ |
| US9443736B2 (en) | 2012-05-25 | 2016-09-13 | Entegris, Inc. | Silylene compositions and methods of use thereof |
| US9598766B2 (en) * | 2012-05-27 | 2017-03-21 | Air Products And Chemicals, Inc. | Vessel with filter |
| TWI611040B (zh) | 2012-05-31 | 2018-01-11 | 恩特葛瑞斯股份有限公司 | 用於批次沉積之具高材料通量的以源試劑爲主之流體輸送 |
| KR101695356B1 (ko) * | 2012-06-26 | 2017-01-24 | 주식회사 레이크머티리얼즈 | 유기금속 화합물 공급 장치 |
| US20140174955A1 (en) * | 2012-12-21 | 2014-06-26 | Qualcomm Mems Technologies, Inc. | High flow xef2 canister |
| JP6521866B2 (ja) * | 2012-12-27 | 2019-05-29 | ブレイワ、ザ サード ジョージ アール.BREIWA,III George R. | 管状揮発装置 |
| US10186570B2 (en) | 2013-02-08 | 2019-01-22 | Entegris, Inc. | ALD processes for low leakage current and low equivalent oxide thickness BiTaO films |
| JP6306286B2 (ja) * | 2013-04-25 | 2018-04-04 | 株式会社フジキン | 流量制御用のオリフィスプレート及びこれを用いた圧力式流量制御装置 |
| US9334566B2 (en) | 2013-11-25 | 2016-05-10 | Lam Research Corporation | Multi-tray ballast vapor draw systems |
| WO2015164029A1 (en) * | 2014-04-21 | 2015-10-29 | Entegris, Inc. | Solid vaporizer |
| CN103949171A (zh) * | 2014-04-28 | 2014-07-30 | 德合南京智能技术有限公司 | 一种气体与溶液快速混合的方法及装置 |
| TWI624554B (zh) * | 2015-08-21 | 2018-05-21 | 弗里松股份有限公司 | 蒸發源 |
| WO2017033053A1 (en) | 2015-08-21 | 2017-03-02 | Flisom Ag | Homogeneous linear evaporation source |
| CN205624467U (zh) * | 2016-03-21 | 2016-10-12 | 深圳市合元科技有限公司 | 一种烟油加热组件及包括该烟油加热组件的电子烟和雾化器 |
| US9928983B2 (en) | 2016-06-30 | 2018-03-27 | Varian Semiconductor Equipment Associates, Inc. | Vaporizer for ion source |
| US10876205B2 (en) | 2016-09-30 | 2020-12-29 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
| US11926894B2 (en) | 2016-09-30 | 2024-03-12 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
| JP6324609B1 (ja) * | 2017-06-21 | 2018-05-16 | 日本エア・リキード株式会社 | 固体材料容器およびその固体材料容器に固体材料が充填されている固体材料製品 |
| US11104993B2 (en) * | 2017-07-28 | 2021-08-31 | Entegris, Inc. | Modular tray ampoule |
| KR102344996B1 (ko) * | 2017-08-18 | 2021-12-30 | 삼성전자주식회사 | 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법 |
| US10895347B2 (en) * | 2017-10-20 | 2021-01-19 | Entegris, Inc. | Heat transfer to ampoule trays |
| JP6425850B1 (ja) * | 2017-11-22 | 2018-11-21 | 日本エア・リキード株式会社 | 固体材料容器およびその固体材料容器に固体材料が充填されている固体材料製品 |
| JP6462096B1 (ja) * | 2017-11-22 | 2019-01-30 | 日本エア・リキード株式会社 | 固体材料容器およびその固体材料容器に固体材料が充填されている固体材料製品 |
| JP6895372B2 (ja) * | 2017-12-12 | 2021-06-30 | 東京エレクトロン株式会社 | 原料容器 |
| JP2021138972A (ja) * | 2018-05-09 | 2021-09-16 | 株式会社高純度化学研究所 | 蒸発原料用容器 |
| JP7144032B2 (ja) * | 2018-06-25 | 2022-09-29 | 株式会社高純度化学研究所 | 蒸発原料用容器の製造方法 |
| KR20200020608A (ko) | 2018-08-16 | 2020-02-26 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 승화기 |
| JP6901153B2 (ja) | 2019-02-07 | 2021-07-14 | 株式会社高純度化学研究所 | 薄膜形成用金属ハロゲン化合物の固体気化供給システム。 |
| JP6887688B2 (ja) | 2019-02-07 | 2021-06-16 | 株式会社高純度化学研究所 | 蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム |
| US11821087B2 (en) | 2019-04-26 | 2023-11-21 | Entegris, Inc. | Vaporization vessel and method |
| US20210071301A1 (en) * | 2019-09-10 | 2021-03-11 | Asm Ip Holding B.V. | Fill vessels and connectors for chemical sublimators |
| US11624113B2 (en) | 2019-09-13 | 2023-04-11 | Asm Ip Holding B.V. | Heating zone separation for reactant evaporation system |
| US20220333237A1 (en) * | 2019-09-18 | 2022-10-20 | Tokyo Electron Limited | Raw material gas supply system and raw material gas supply method |
| US20210123134A1 (en) * | 2019-10-24 | 2021-04-29 | Entegris, Inc. | Sublimation ampoule with level sensing |
| JP2023505780A (ja) * | 2019-12-11 | 2023-02-13 | ラム リサーチ コーポレーション | 液体前駆体気化器 |
| KR102783898B1 (ko) * | 2020-04-29 | 2025-03-18 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
| IL297622A (en) | 2020-05-12 | 2022-12-01 | Pbs Biotech Inc | Material transfer devices and related systems and methods |
| US11578406B2 (en) | 2020-12-08 | 2023-02-14 | Applied Materials, Inc. | Ampoule for a semiconductor manufacturing precursor |
| JP7391900B2 (ja) * | 2021-02-09 | 2023-12-05 | 大陽日酸株式会社 | 半導体材料ガス反応装置及びガス反応容器 |
| CN114959643B (zh) * | 2021-02-26 | 2025-04-29 | 恩特格里斯公司 | 固体汽化器 |
| WO2023059827A1 (en) * | 2021-10-08 | 2023-04-13 | Entegris, Inc. | Modular tray for solid chemical vaporizing chamber |
| KR102716921B1 (ko) * | 2021-10-25 | 2024-10-14 | (주)덕산테코피아 | 반도체 제조장비용 캐니스터 |
| JP7788873B2 (ja) * | 2022-01-26 | 2025-12-19 | 古河電気工業株式会社 | 気化装置及び気化方法 |
| US20240207838A1 (en) * | 2022-12-22 | 2024-06-27 | Applied Materials, Inc. | Ampoule for a semiconductor manufacturing precursor |
| CN116121730B (zh) * | 2023-04-12 | 2023-09-01 | 江苏鹏举半导体设备技术有限公司 | 固态前驱体源升华装置 |
| CN118028747B (zh) * | 2024-04-11 | 2024-07-30 | 江苏宝新智能装备有限公司 | 一种机器人制造外壳镀覆设备 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6270839B1 (en) * | 1999-08-20 | 2001-08-07 | Pioneer Corporation | Device for feeding raw material for chemical vapor phase deposition and method therefor |
Family Cites Families (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US384682A (en) * | 1888-06-19 | Process of obtaining the precious metals from speiss | ||
| US2447789A (en) | 1945-03-23 | 1948-08-24 | Polaroid Corp | Evaporating crucible for coating apparatus |
| US2721064A (en) | 1951-10-03 | 1955-10-18 | Hugo O Reichardt | Carbonating device |
| US2769624A (en) | 1953-07-16 | 1956-11-06 | Okey S Burnside | Air cleaner and moistener for carburetors |
| US2902574A (en) | 1958-02-03 | 1959-09-01 | Hughes Aircraft Co | Source for vapor deposition |
| US3405251A (en) | 1966-05-31 | 1968-10-08 | Trw Inc | Vacuum evaporation source |
| US3647197A (en) * | 1970-04-27 | 1972-03-07 | Ford Motor Co | Vacuum deposition |
| US3740043A (en) | 1970-05-26 | 1973-06-19 | Republic Steel Corp | Apparatus for vaporizing molten metal |
| US3834682A (en) | 1972-06-19 | 1974-09-10 | American Hospital Supply Corp | Mixing column for medical humidifier and method of humidifying inhalable gases |
| US4190965A (en) | 1979-01-15 | 1980-03-04 | Alternative Pioneering Systems, Inc. | Food dehydrator |
| JPS58126973A (ja) | 1982-01-22 | 1983-07-28 | Hitachi Ltd | 薄膜形成用ソ−ス供給装置 |
| JPS6070176A (ja) | 1983-09-27 | 1985-04-20 | Fujitsu Ltd | 固体ソ−ス蒸発ボンベ |
| JPH0817804B2 (ja) | 1987-12-23 | 1996-02-28 | 雪印乳業株式会社 | 殺菌剤気化装置 |
| JPH0269389A (ja) | 1988-08-31 | 1990-03-08 | Toyo Stauffer Chem Co | 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法 |
| US5104695A (en) | 1989-09-08 | 1992-04-14 | International Business Machines Corporation | Method and apparatus for vapor deposition of material onto a substrate |
| ATE139580T1 (de) | 1989-09-26 | 1996-07-15 | Canon Kk | Gasversorgungsvorrichtung und ihre verwendung für eine filmabscheidungsanlage |
| US5362328A (en) | 1990-07-06 | 1994-11-08 | Advanced Technology Materials, Inc. | Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem |
| JPH04228562A (ja) | 1990-12-27 | 1992-08-18 | Mitsubishi Electric Corp | 薄膜形成装置 |
| JP3174351B2 (ja) * | 1991-03-19 | 2001-06-11 | 三菱電線工業株式会社 | 超電導mocvd用ガス化容器 |
| JPH04333572A (ja) | 1991-05-10 | 1992-11-20 | Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai | 酸化物超電導体用mo原料の気化方法 |
| JP2559880Y2 (ja) * | 1991-08-15 | 1998-01-19 | 三菱電線工業株式会社 | 超電導mocvd用蒸発器 |
| US5336324A (en) | 1991-12-04 | 1994-08-09 | Emcore Corporation | Apparatus for depositing a coating on a substrate |
| JPH05214537A (ja) * | 1992-01-30 | 1993-08-24 | Nec Corp | 固体昇華用の気化器 |
| US5607002A (en) | 1993-04-28 | 1997-03-04 | Advanced Delivery & Chemical Systems, Inc. | Chemical refill system for high purity chemicals |
| KR960010901A (ko) | 1994-09-30 | 1996-04-20 | 김광호 | 고체 유기화합물 전용 버블러 장치 |
| JPH08279497A (ja) * | 1995-04-07 | 1996-10-22 | Hitachi Ltd | 半導体製造装置および半導体装置 |
| JPH1025576A (ja) | 1996-04-05 | 1998-01-27 | Dowa Mining Co Ltd | Cvd成膜法における原料化合物の昇華方法 |
| US5917140A (en) | 1996-05-21 | 1999-06-29 | Advanced Technology Materials, Inc. | Sorbent-based fluid storage and dispensing vessel with enhanced heat transfer means |
| US6413476B1 (en) | 1996-12-05 | 2002-07-02 | Mary F. Barnhart | Aromatic diffuser with replaceable cartridge |
| US6409839B1 (en) | 1997-06-02 | 2002-06-25 | Msp Corporation | Method and apparatus for vapor generation and film deposition |
| WO1999004061A1 (en) | 1997-07-18 | 1999-01-28 | Advanced Technology Materials, Inc. | Liquid delivery system comprising upstream pressure control means |
| US5972117A (en) * | 1997-09-03 | 1999-10-26 | Applied Materials, Inc. | Method and apparatus for monitoring generation of liquid chemical vapor |
| US6107634A (en) | 1998-04-30 | 2000-08-22 | Eaton Corporation | Decaborane vaporizer |
| JPH11335845A (ja) * | 1998-05-20 | 1999-12-07 | Ebara Corp | 液体原料気化装置 |
| JP2000012218A (ja) | 1998-06-23 | 2000-01-14 | Tdk Corp | 有機el素子の製造装置および製造方法 |
| US6210485B1 (en) | 1998-07-21 | 2001-04-03 | Applied Materials, Inc. | Chemical vapor deposition vaporizer |
| US6454860B2 (en) * | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
| US6202591B1 (en) | 1998-11-12 | 2001-03-20 | Flex Products, Inc. | Linear aperture deposition apparatus and coating process |
| JP2000192243A (ja) * | 1998-12-24 | 2000-07-11 | Nissin Electric Co Ltd | 気化器メンテナンス方法 |
| JP2001059161A (ja) | 1999-08-20 | 2001-03-06 | Tdk Corp | 有機薄膜の製造装置および製造方法 |
| US6288403B1 (en) | 1999-10-11 | 2001-09-11 | Axcelis Technologies, Inc. | Decaborane ionizer |
| US6473564B1 (en) | 2000-01-07 | 2002-10-29 | Nihon Shinku Gijutsu Kabushiki Kaisha | Method of manufacturing thin organic film |
| DE10007059A1 (de) * | 2000-02-16 | 2001-08-23 | Aixtron Ag | Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung |
| US6237529B1 (en) | 2000-03-03 | 2001-05-29 | Eastman Kodak Company | Source for thermal physical vapor deposition of organic electroluminescent layers |
| WO2001083084A1 (en) * | 2000-05-03 | 2001-11-08 | Advanced Technology Materials, Inc. | Gas cabinet assembly comprising sorbent-based gas storage and delivery system |
| EP1160355B1 (en) | 2000-05-31 | 2004-10-27 | Shipley Company LLC | Bubbler |
| US6581915B2 (en) | 2000-07-27 | 2003-06-24 | The Procter & Gamble Company | Dispensing device for dispensing scents |
| US6887337B2 (en) | 2000-09-19 | 2005-05-03 | Xactix, Inc. | Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto |
| US6431118B1 (en) | 2001-05-21 | 2002-08-13 | Imagine Gold, L.L.C. | Apparatus and method for providing humidified air to a terrarium |
| US6718126B2 (en) * | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
| US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
| JP3932874B2 (ja) * | 2001-11-27 | 2007-06-20 | 三菱マテリアル株式会社 | 有機金属化学蒸着法用ルテニウム化合物及び該化合物により得られたルテニウム含有薄膜 |
| TW200300701A (en) * | 2001-11-30 | 2003-06-16 | Asml Us Inc | High flow rate bubbler system and method |
| US20030111014A1 (en) | 2001-12-18 | 2003-06-19 | Donatucci Matthew B. | Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds |
| US6620225B2 (en) | 2002-01-10 | 2003-09-16 | Advanced Technology Materials, Inc. | Adsorbents for low vapor pressure fluid storage and delivery |
| JP2003282449A (ja) * | 2002-03-20 | 2003-10-03 | Japan Pionics Co Ltd | 気化器及び半導体製造装置の洗浄方法 |
| US7601225B2 (en) * | 2002-06-17 | 2009-10-13 | Asm International N.V. | System for controlling the sublimation of reactants |
| US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
| US7300038B2 (en) | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
| US6921062B2 (en) * | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| US6915592B2 (en) | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
| WO2004011695A2 (en) | 2002-07-30 | 2004-02-05 | Asm America, Inc. | Sublimation system employing carrier gas |
| US6779378B2 (en) | 2002-10-30 | 2004-08-24 | Asm International N.V. | Method of monitoring evaporation rate of source material in a container |
| US6991671B2 (en) | 2002-12-09 | 2006-01-31 | Advanced Technology Materials, Inc. | Rectangular parallelepiped fluid storage and dispensing vessel |
| US7261118B2 (en) | 2003-08-19 | 2007-08-28 | Air Products And Chemicals, Inc. | Method and vessel for the delivery of precursor materials |
| JP4922286B2 (ja) * | 2005-03-16 | 2012-04-25 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | イオン注入システム及びフッ素化学物質供給源並びに二フッ化キセノン供給方法 |
| US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
-
2004
- 2004-06-01 US US10/858,509 patent/US7300038B2/en not_active Expired - Lifetime
-
2005
- 2005-06-01 SG SG10201507473RA patent/SG10201507473RA/en unknown
- 2005-06-01 KR KR1020127006970A patent/KR101181011B1/ko not_active Expired - Lifetime
- 2005-06-01 CN CN201210534049.6A patent/CN103031542B/zh not_active Expired - Lifetime
- 2005-06-01 KR KR1020067027805A patent/KR101247824B1/ko not_active Expired - Lifetime
- 2005-06-01 WO PCT/US2005/019138 patent/WO2005118119A1/en not_active Ceased
- 2005-06-01 CN CNA2005800259208A patent/CN1993172A/zh active Pending
- 2005-06-01 SG SG2012018636A patent/SG179494A1/en unknown
- 2005-06-01 EP EP11150744A patent/EP2363199A1/en not_active Ceased
- 2005-06-01 JP JP2007515504A patent/JP5342139B2/ja not_active Expired - Lifetime
- 2005-06-01 EP EP05755344A patent/EP1750833B1/en not_active Expired - Lifetime
- 2005-06-01 CN CN201210532357.5A patent/CN103028270B/zh not_active Expired - Lifetime
- 2005-06-01 SG SG200907954-2A patent/SG158097A1/en unknown
- 2005-06-01 AT AT05755344T patent/ATE530249T1/de not_active IP Right Cessation
-
2007
- 2007-08-28 US US11/846,394 patent/US7556244B2/en not_active Expired - Lifetime
- 2007-10-30 US US11/930,031 patent/US7487956B2/en not_active Expired - Lifetime
-
2012
- 2012-11-30 JP JP2012262401A patent/JP2013049926A/ja active Pending
-
2015
- 2015-09-29 JP JP2015190933A patent/JP6133954B2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6270839B1 (en) * | 1999-08-20 | 2001-08-07 | Pioneer Corporation | Device for feeding raw material for chemical vapor phase deposition and method therefor |
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| JP2008501507A (ja) | 2008-01-24 |
| SG158097A1 (en) | 2010-01-29 |
| US7556244B2 (en) | 2009-07-07 |
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