CN102782180A - 铟靶及其制造方法 - Google Patents
铟靶及其制造方法 Download PDFInfo
- Publication number
- CN102782180A CN102782180A CN2011800027348A CN201180002734A CN102782180A CN 102782180 A CN102782180 A CN 102782180A CN 2011800027348 A CN2011800027348 A CN 2011800027348A CN 201180002734 A CN201180002734 A CN 201180002734A CN 102782180 A CN102782180 A CN 102782180A
- Authority
- CN
- China
- Prior art keywords
- indium
- target
- indium target
- sputter
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 113
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 238000004544 sputter deposition Methods 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 18
- 238000005096 rolling process Methods 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 15
- 238000005266 casting Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 3
- 150000002471 indium Chemical class 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
- B21B1/02—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling heavy work, e.g. ingots, slabs, blooms, or billets, in which the cross-sectional form is unimportant ; Rolling combined with forging or pressing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D7/00—Casting ingots, e.g. from ferrous metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4998—Combined manufacture including applying or shaping of fluent material
- Y10T29/49988—Metal casting
- Y10T29/49991—Combined with rolling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-043954 | 2011-03-01 | ||
JP2011043954A JP5140169B2 (ja) | 2011-03-01 | 2011-03-01 | インジウムターゲット及びその製造方法 |
PCT/JP2011/065585 WO2012117579A1 (ja) | 2011-03-01 | 2011-07-07 | インジウムターゲット及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102782180A true CN102782180A (zh) | 2012-11-14 |
CN102782180B CN102782180B (zh) | 2014-07-16 |
Family
ID=46757534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180002734.8A Active CN102782180B (zh) | 2011-03-01 | 2011-07-07 | 铟靶及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9139900B2 (zh) |
JP (1) | JP5140169B2 (zh) |
KR (1) | KR101297446B1 (zh) |
CN (1) | CN102782180B (zh) |
TW (1) | TWI390067B (zh) |
WO (1) | WO2012117579A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104919080A (zh) * | 2013-07-08 | 2015-09-16 | Jx日矿日石金属株式会社 | 溅射靶及其制造方法 |
CN115595544A (zh) * | 2022-10-31 | 2023-01-13 | 宁波工程学院(Cn) | 检测金属靶材溅射性能的方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4948634B2 (ja) | 2010-09-01 | 2012-06-06 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
JP5026611B1 (ja) | 2011-09-21 | 2012-09-12 | Jx日鉱日石金属株式会社 | 積層構造体及びその製造方法 |
JP5074628B1 (ja) | 2012-01-05 | 2012-11-14 | Jx日鉱日石金属株式会社 | インジウム製スパッタリングターゲット及びその製造方法 |
WO2014030362A1 (ja) | 2012-08-22 | 2014-02-27 | Jx日鉱日石金属株式会社 | インジウム製円筒型スパッタリングターゲット及びその製造方法 |
CN102925868B (zh) * | 2012-11-29 | 2014-12-10 | 研创应用材料(赣州)有限公司 | 一种制备铟靶材金属薄膜的方法 |
JP5746252B2 (ja) * | 2013-03-28 | 2015-07-08 | 光洋應用材料科技股▲分▼有限公司 | 正方晶系結晶構造を有するインジウムターゲット |
JP6222067B2 (ja) * | 2014-12-10 | 2017-11-01 | 住友金属鉱山株式会社 | 陽極の再生方法、水酸化インジウム粉の製造方法、酸化インジウム粉の製造方法、及びスパッタリングターゲットの製造方法 |
JP7207833B2 (ja) | 2018-08-31 | 2023-01-18 | エルジー・ケム・リミテッド | 装飾部材用フィルムの製造方法 |
KR102507549B1 (ko) * | 2018-08-31 | 2023-03-07 | 주식회사 엘지화학 | 장식 부재의 제조방법 및 장식 부재 |
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JPS6344820B2 (zh) * | 1981-05-07 | 1988-09-07 | Mitsui Mining & Smelting Co | |
JP2010024474A (ja) * | 2008-07-16 | 2010-02-04 | Sumitomo Metal Mining Co Ltd | インジウムターゲットの製造方法 |
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JP4948634B2 (ja) | 2010-09-01 | 2012-06-06 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
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JP5026611B1 (ja) | 2011-09-21 | 2012-09-12 | Jx日鉱日石金属株式会社 | 積層構造体及びその製造方法 |
JP5074628B1 (ja) | 2012-01-05 | 2012-11-14 | Jx日鉱日石金属株式会社 | インジウム製スパッタリングターゲット及びその製造方法 |
WO2014030362A1 (ja) | 2012-08-22 | 2014-02-27 | Jx日鉱日石金属株式会社 | インジウム製円筒型スパッタリングターゲット及びその製造方法 |
-
2011
- 2011-03-01 JP JP2011043954A patent/JP5140169B2/ja active Active
- 2011-07-07 WO PCT/JP2011/065585 patent/WO2012117579A1/ja active Application Filing
- 2011-07-07 KR KR1020117030225A patent/KR101297446B1/ko active IP Right Grant
- 2011-07-07 US US13/504,329 patent/US9139900B2/en active Active
- 2011-07-07 CN CN201180002734.8A patent/CN102782180B/zh active Active
- 2011-08-01 TW TW100127177A patent/TWI390067B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6344820B2 (zh) * | 1981-05-07 | 1988-09-07 | Mitsui Mining & Smelting Co | |
JP2010024474A (ja) * | 2008-07-16 | 2010-02-04 | Sumitomo Metal Mining Co Ltd | インジウムターゲットの製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104919080A (zh) * | 2013-07-08 | 2015-09-16 | Jx日矿日石金属株式会社 | 溅射靶及其制造方法 |
US9922807B2 (en) | 2013-07-08 | 2018-03-20 | Jx Nippon Mining & Metals Corporation | Sputtering target and method for production thereof |
CN104919080B (zh) * | 2013-07-08 | 2018-10-16 | Jx日矿日石金属株式会社 | 溅射靶及其制造方法 |
CN115595544A (zh) * | 2022-10-31 | 2023-01-13 | 宁波工程学院(Cn) | 检测金属靶材溅射性能的方法 |
CN115595544B (zh) * | 2022-10-31 | 2024-05-28 | 宁波工程学院 | 检测金属靶材溅射性能的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2012180555A (ja) | 2012-09-20 |
WO2012117579A1 (ja) | 2012-09-07 |
KR20120111936A (ko) | 2012-10-11 |
JP5140169B2 (ja) | 2013-02-06 |
US9139900B2 (en) | 2015-09-22 |
CN102782180B (zh) | 2014-07-16 |
TWI390067B (zh) | 2013-03-21 |
US20130037408A1 (en) | 2013-02-14 |
KR101297446B1 (ko) | 2013-08-16 |
TW201237200A (en) | 2012-09-16 |
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