CN102017107B - 接合结构以及电子器件 - Google Patents

接合结构以及电子器件 Download PDF

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Publication number
CN102017107B
CN102017107B CN2009801159188A CN200980115918A CN102017107B CN 102017107 B CN102017107 B CN 102017107B CN 2009801159188 A CN2009801159188 A CN 2009801159188A CN 200980115918 A CN200980115918 A CN 200980115918A CN 102017107 B CN102017107 B CN 102017107B
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layer
electrode
brazing
electronic component
barrier layer
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CN102017107A (zh
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古泽彰男
酒谷茂昭
中村太一
松尾隆广
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233—Sheets, foils
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    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
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    • B23K35/264—Bi as the principal constituent
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Abstract

本发明的接合结构，对构成电子器件的电子元件(12)和构成该电子器件的电极(14)进行接合。接合结构包括：钎焊层，其含有0.2～6重量％的铜、0.02～0.2重量％的锗、以及93.8～99.78重量％的铋；设置在钎焊层和电极之间的镍层；设置在镍层和钎焊层之间的阻挡层。在此，通过钎焊层接合电子元件和电极之后，阻挡层的平均厚度为0.5～4.5μm。

Description

接合结构以及电子器件
技术领域
本发明涉及一种接合结构，尤其涉及一种使得对构成电子器件的电子元件和构成电子器件的电极进行接合的接合结构的耐久性提高的技术。
背景技术
功率晶体管等的电子器件大多是将半导体元件等的电子元件直接接合在至少1个电极上而构成的。图7中，通过透视了壳体的一部分的局部透视图示出以往的功率晶体管的一个实例。图例示的晶体管100其半导体元件104配置在壳体102的内部，该半导体元件104直接与1个电极106接合。又，半导体元件104通过金属丝与其他2个电极108以及110连接。对于这样的以往的功率晶体管，在将半导体元件104直接接合于上述1个电极上的接合部，通常使用钎焊。
又，用于将功率晶体管等的电子器件本身安装在其他的基板上的接合部也使用的是钎焊。用于将功率晶体管等的电子器件安装于其他的基板上的钎焊材料大多使用熔点为200～230℃的钎焊材料。
这种情况下的钎焊一般通过钎焊浸渍方式的浸沾装置来进行接合。此时，需要将钎焊材料加热到250～260℃，因此电子器件的电极的温度有时也会达到250～260℃。因此，如果将电子器件的电子元件内部接合于电极的接合部的钎焊材料的熔点为200～230℃的话，将电子器件焊在其他基板上时，电子元件和电极的接合部的钎焊材料有可能会熔化。电子元件和电极的接合部的钎焊材料熔融的话，会发生短路或断线、或者电子特性产生变化，从而可能导致最终制品发生次品。
因此，电子元件和电极的接合部的钎焊材料要求使用更高熔点的钎焊材料。作为这样的钎焊材料，已提出一种熔点为270℃以上的、包含Bi(铋)和少量Cu(铜)的钎焊材料(参照专利文献1)。
现有技术文献
专利文献
专利文献1：日本特开2007-313526号公报
发明内容
发明要解决的问题
但是，将以Bi为主要成分的熔点为270℃以上的钎焊材料使用于电子元件和电极的接合部的话，接合部容易产生裂缝，从而降低接合的可靠性。以下，对其理由进行详细说明。
连接有电子元件的电极等的材料一般使用Cu，这是因为其具有高的导电性，且与其他良导电性的金属相比较便宜。
但是，Cu具有这样的性质：放置在大气中时，随着时间的经过而被氧化，从而氧化膜逐渐变厚。因此，为了获得与钎焊材料的良好的接合，需要保护电极的表面不被氧化直到即将进行钎焊接合之前为止。因此，通过电镀在由Cu构成的电极的表面形成Ni(镍)层，来防止电极的氧化。
图8显示表面形成有Ni层的电极。图示例的电极120由Cu构成，在其表面通过电镀形成有用于防止氧化的厚度为1～3μm的Ni层122
图9示出通过钎焊将电子元件接合在上述电极上的情形。此处，通过包含钎焊层124的接合部接合电子元件126与电极120，该钎焊层124由以Bi为主要成分的、熔点为270℃以上的合金构成。此时，将接合部加热到271℃以上时，包含于钎焊层124中的Bi与电极120的表面的Ni层122反应，形成由Bi3Ni构成的金属间化合物。由于Bi与Ni的反应性高，因此接合部的几乎所有的Ni层122都变化为由Bi3Ni构成的金属间化合物。因此，钎焊层124和电极120变为夹着由Bi3Ni构成的金属间化合物128而接合的状态。
由于Bi3Ni具有硬且脆的性质，因此金属间化合物层128的厚度增加的话，接合部容易产生裂缝，接合的可靠性显著下降。
本发明正是鉴于上述问题点而做成的，其目的在于提供一种难以产生裂缝、可靠性高的对构成电子器件的电子元件和构成该电子器件的电极进行接合的接合结构、以及具有这样的接合结构的电子器件。
解决问题的手段
为了达到上述目的，本发明提供一种接合结构，其对构成电子器件的电子元件和构成所述电子器件的电极进行接合，其包括：对所述电子元件和所述电极进行接合的钎焊层，该钎焊层含有0.2～6重量％的铜、0.02～0.2重量％的锗、以及93.8～99.78重量％的铋；设置在所述钎焊层和所述电极以及所述电子元件中的至少一方之间的镍层；设置在所述镍层和所述钎焊层之间的阻挡层，通过所述钎焊层接合所述电子元件和所述电极之后，所述阻挡层的平均厚度为0.5～4.5μm。
在本发明的较佳实施形态中，所述阻挡层含有从由银、金、钯、铝以及钛所构成的组当中选择出的至少1种。
在本发明的较佳实施形态中，所述阻挡层的初始厚度为1～5μm。
在本发明的较佳实施形态中，所述钎焊层含有0.2～4重量％的铜。
在本发明的较佳实施形态中，所述钎焊层含有0.02～0.1重量％的锗。
在本发明的较佳实施形态中，所述电极含有铜。
在本发明的较佳实施形态中，所述电子元件为半导体元件。
在本发明的较佳实施形态中，所述半导体元件含有Si、SiC或者GaN。
在本发明的较佳实施形态中，所述电子器件为功率晶体管。
又，本发明提供一种电子器件，其是通过含有钎焊层的接合部将电子元件接合在电极上而构成的，所述钎焊层含有0.2～6重量％的铜、0.02～0.2重量％的锗、以及93.8～99.78重量％的铋，所述接合部还包括在所述钎焊层和所述电极以及所述电子元件中的至少一方之间的镍层，和所述镍层和所述钎焊层之间具有阻挡层，通过所述钎焊层接合所述电子元件和所述电极之后，所述阻挡层的平均厚度为0.5～4.5μm。
本发明的电子器件，在其较佳实施形态中，所述阻挡层的初始厚度为1～5μm。
发明的效果
在本发明中，对构成电子器件的电子元件和构成电子器件的电极进行接合的接合结构包括：由含有Bi(铋)作为主成分的钎焊材料构成的钎焊层、Ni(镍)层、和介于它们之间的阻挡层。在通过钎焊层接合电子元件和电极之后，阻挡层的平均厚度为0.5～4.5μm，由此可以防止钎焊层的Bi和Ni层的Ni反应，生成容易产生裂缝的由Bi3Ni构成的金属间化合物。从而可以提高接合结构的可靠性。
为了使得通过钎焊层接合电子元件和电极之后的阻挡层的平均厚度为0.5～4.5μm，理想的是，阻挡层的初始厚度为1～5μm。由此，可以可靠地防止接合时阻挡层消失，结果导致由Bi3Ni构成的金属间化合物生成的情形。
又，由于含有Bi作为主要成分的钎焊材料包含有0.02～0.2重量％的锗，因此能够显著抑制氧化物的生成(参照图2)。因此，可以进一步地提高接合结构的可靠性。
又，含有Bi作为主要成分的钎焊材料具有270℃以上的熔点。另一方面，将电子器件本身安装在其他基板等上时所使用的钎焊材料通常使用的是熔点为200～230℃的材料.由此，可以防止将电子元件接合在电极上的钎焊材料由于将电子器件安装在其他基板等时的加热而熔融。因此，可以得到能够防止电子器件发生断线等不良这样的效果。
附图说明
图1是示出本发明的实施形态1的接合结构的概略构成的局部截面图。
图2是示出包含于钎焊材料中的锗和氧化物的生成量的关系的图表。
图3是示出实施形态1的接合结构的变形例的概略构成的局部截面图。
图4A是示出本发明的一实施形态的电子器件的概略构成的立体图。
图4B是上述电子器件的截面图。
图5是示出本发明的实施例以及比较例中钎焊时间和Bi3Ni层的厚度的关系的图表。
图6是示出本发明的实施例以及比较例中温度循环试验的循环数和次品发生数量的关系的图表。
图7是示出以往的电子器件的概略构成的局部透视图。
图8是示出以往的电子器件的电极的概略构成的截面图。
图9是示出以往的电子器件的接合结构的概略构成的截面图。
具体实施方式
下面，参照附图说明本发明的实施形态。
(实施形态1)
图1中通过截面图示出本发明的实施形态1的接合结构的概略构成。图示例的接合结构10是用于将构成未图示的电子器件的电子元件12和构成该电子器件的电极14接合的接合结构。另外，在图1中，电子元件12没有通过截面表示，而是通过轮廓图形表示出其概略形状。
电子元件12没有特别限定，可以是例如Si(硅)元件、GaN(氮化镓)元件、以及SiC(碳化硅)元件。电子元件12是这些元件的情况下，电子器件作为晶体管、或功率晶体管(一般地，最大集电极损耗为1W以上的晶体管)而构成。电极14所包含的主要成分为Cu(铜)。
接合结构10包括：用于接合电子元件12和电极14的钎焊层16，形成于电极14的表面的Ni(镍)18、和介于钎焊层16和Ni层18之间的阻挡层20。
钎焊层16使用包含90％以上Bi(铋)的合金(钎焊材料)构成。更详细地说，钎焊层16所使用的钎焊材料最好使用含有0.2～6重量％的Cu、0.02～0.2重量的Ge(锗)、以及93.8～99.78重量％的Bi的合金。
上述钎焊材料中，Cu的含有量更理想的是0.2～4重量％，Ge的含有量更理想的是0.02～0.1重量％。通过将Cu的含有量设定为0.2重量％以上，可以确保钎焊材料的良好的浸润性。又，通过将Cu的含有量设定在4重量％以下，即便在钎焊层16被加热到大约270℃的情况下，也能够使其不熔化。
又，通过将Ge的含有量设定在0.02重量％以上，可以显著地抑制氧化物的生成。图2示出Ge的含有量和氧化物的生成量的关系。另一方面，通过将Ge的含有量设定在0.1重量％以下，可以抑制成本的上升。
又，将上述组成的合金作为材料的钎焊层16由于其熔点为270～275℃，因此将电子器件安装于其他的基板等时，可以防止钎焊层16熔融而导致断线等不良情况发生。这是因为将电子器件安装于基板等时所使用的钎焊材料的熔点通常为200～230℃。
Ni层18是为了防止由Cu构成的电极14氧化而设置的层，可以通过镀Ni而形成。阻挡层20是为了防止构成Ni层18的Ni和包含于钎焊层16中Bi反应而生成由Bi3Ni构成的金属间化合物而设置的层。Bi阻挡层20可以由与Bi之间不产生化合物的材料构成。这样的材料，可以列举出Ag(银)、Au(金)、Pd(钯)、Al(铝)以及Ti(钛)。这些材料当中，从不易氧化且浸润性良好这方面考虑，较理想的是Ag、Au以及Ti，进一步考虑成本以及与Bi的接合性的话，Ag最为理想。
阻挡层20形成为，进行钎焊层16的接合之后的平均厚度为0.5～4.5μm。因此，进行钎焊层16的接合(所谓钎焊)以前的阻挡层20的初始厚度最好为1～5μm。通过将阻挡层20的初始厚度设为1μm以上，在通过钎焊层16进行接合之际，可避免阻挡层20受到热等的影响而消失。又，通过将阻挡层20的初始厚度设定为5μm以下，可以避免成本上升。
在这里，在通过钎焊层16进行接合之后的阻挡层20的平均厚度可以通过以下操作来测定：利用精密切割机切割接合后的样本以便看见其截面，利用抛光装置使得切断面平滑化之后，利用电子显微镜将切断面放大到3000倍，测定任意多个位置(例如10个位置)的厚度，算出其平均值。阻挡层20的初始厚度也可以这样测定。
由于Bi与构成阻挡层20的金属不产生化合物，因此Bi与构成阻挡层20的金属的接合是通过Bi以及构成阻挡层20的金属渐渐扩散而进行的。因此，如Bi与Ni的情形那样，不会在短时间内在接合界面生成金属间化合物的层。
如以上所说明的那样，通过形成由例如Ag构成的、Ni层18和钎焊层16之间进行了钎焊层16的接合之后的平均厚度为0.5～4.5μm的阻挡层20，可以可靠地防止由Bi3Ni构成的金属间化合物生成。
在这里，阻挡层20并不仅设置在电极14侧。如图3所示，Ni层22设置在电子元件12的表面的情况下，阻挡层24可以设置在钎焊层16和电子元件12侧的Ni层22之间。由此，可以防止电子元件12的表面的Ni层22与钎焊层16的Bi反应而生成由Bi3Ni构成的金属间化合物。
接下来，对本发明的实施例进行说明。本发明并不限定于以下的实施例。
(实施例)
作为电子器件，作成图4A以及图4B所示的由IGBT分立式晶体管构成的晶体管30。图4A是晶体管30的立体图，图4B是图4A的IVB-IVB线的截面图。
晶体管30包括作为电子元件12的Si元件32、作为与Si元件32接合的电极的引线框34、和其他的电极。引线框34以Cu为主要成分而构成。Si元件32具有多个(图中为4个)端子。Si元件32的1个端子通过接合部36与引线框34直接接合。Si元件32的其他端子通过铝制的金属丝38分别与其他的电极连接。又，Si元件32通过未图示的环氧树脂的模型体密封并保护。
又，各外部端子42、44以及46通过熔点为230℃以下的钎焊材料与其他的基板的电极接合，由此将晶体管30安装在该基板上使用。接合部36包括钎焊层16、形成于引线框34的表面的Ni层18、和形成于Ni层18之上的阻挡层20。
钎焊层16由含有99.14重量％的Bi、0.8重量％的Cu、0.06重量％的Ge和不可避免的杂质的、熔点为274℃的钎焊材料构成。钎焊层16的厚度为40μm。Ni层18的厚度为2μm。阻挡层20通过电镀Ag而形成，使其厚度为3μm。
将钎焊时间分为5秒(实施例1)、10秒(实施例2)、20秒(实施例3)以及30秒(实施例4)这四种来进行钎焊层16的接合，在该四种钎焊时间下分别制造10个晶体管30。在这里，钎焊时间是指从钎焊材料熔融的时刻开始到该温度低于熔点为止的时间。又，钎焊温度(钎焊材料温度)根据钎焊时间来调节。如上所述，制造合计40个由晶体管30构成的试验体。并且，对于这些试验体，调查接合部36处有无生成Bi3Ni。其结果在图5的图表中示出。
又，对于上述实施例1～4的晶体管30，通过温度循环试验实施接合可靠性试验。该试验内容为，以在150℃以及-65℃的各环境下将晶体管30分别保持30分钟作为1个循环，每隔100个循环，即在100个循环、200个循环、300个循环、400个循环以及500个循环时，对发生了接合不良的试验体的数量进行计数。其结果表示于图6的图表中。在这里，接合不良是指接合部发生龟裂等、不导通的状态。
(比较例)
除了在Ni层18和钎焊层16之间没有设置阻挡层20之外，与上述实施例同样地制造由IGBT分立式晶体管构成的试验体。此时，将钎焊时间分为5秒(比较例1)、10秒(比较例2)、20秒(比较例3)以及30秒(比较例4)这四种，在该四种钎焊时间下分别制造10个晶体管30。并且，对于这些试验体，采用与对上述实施例所进行的方法相同的方法，调查接合部中有无生成Bi3Ni，并进行接合可靠性试验。其结果示于图5以及图6中。(评价)
如图5所示，在Ni层18和钎焊层16之间设置阻挡层20的实施例1～4中，即便钎焊时间设定为30秒，也不会生成由Bi3Ni构成的金属间化合物。相对于此，对于未设置Bi阻挡层20的比较例，在所有的比较例1～4中，都形成有由Bi3Ni构成的金属间化合物。
金属间化合物层的平均厚度为8μm，其结果示出40μm的钎焊层16中的20％变化为硬且脆的金属间化合物层。又，该情况意味着由于金属间化合物层没有起到应力缓和层的作用，发挥应力缓和层的作用以维持接合的可靠性的钎焊层减少为原来的80％即32μm。
从以上的结果可知，通过在Ni层18和钎焊层16之间预先形成含有充分厚度的Ag的阻挡层20，可以防止由Bi3Ni构成的金属间化合物生成，提高接合的可靠性。
又，从图6可知，在Ni层18和钎焊层16之间未设置阻挡层20的比较例1～4中，通过200个循环的温度循环试验发生了接合不良。并且，随着循环数的增加，次品的发生个数增大，在500个循环的温度循环试验中，40个试验体中有27个试验体发生了接合不良。
相对于此，对于在Ni层18和钎焊层16之间设置了阻挡层20的实施例1～4，在500个循环的温度循环试验中，没有发生了接合不良的试验体。
基于以上结果可知，通过在Ni层18和钎焊层16之间设置初始厚度为1～5μm的阻挡层20，接合的可靠性逐级提高。
产业上的可利用性
根据本发明，可提高构成电子器件的电子元件和电极的接合结构的可靠性。因此，本发明可以很好地适用于晶体管、SOP、QFP、CSP、片式电感器以及电容等的电子制品。
符号说明
10接合构造
12电子元件
14电极
16钎焊层
18、22Ni层
20、24阻挡层。

Claims (2)

1.一种接合结构，其具有电子器件内部的电子元件、所述电子器件的含有铜的电极、以及所述电子元件和所述电极的接合部，其特征在于，所述接合部包括：
位于所述电子元件和所述电极之间的钎焊层，该钎焊层含有0.2～6重量％的铜、0.02～0.2重量％的锗、以及93.8～99.78重量％的铋；
位于所述钎焊层和所述电极之间的镍层；和
位于所述镍层和所述钎焊层之间的阻挡层，所述阻挡层含有从银、金以及钛当中选择出的至少1种，
所述阻挡层的平均厚度为0.5～4.5μm。
2.一种电子器件，其包括电子元件、含有铜的电极以及所述电子元件和所述电极的接合部，其特征在于，
所述接合部包括：
位于所述电子元件和所述电极之间的钎焊层，该钎焊层含有0.2～6重量％的铜、0.02～0.2重量％的锗、以及93.8～99.78重量％的铋；
位于所述钎焊层和所述电极之间的镍层；和
位于所述镍层和所述钎焊层之间的阻挡层，所述阻挡层含有从银、金以及钛当中选择出的至少1种，
所述阻挡层的平均厚度为0.5～4.5μm。
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