CN101909809A - 接合材料、电子部件以及接合结构体 - Google Patents

接合材料、电子部件以及接合结构体 Download PDF

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CN101909809A
CN101909809A CN2008801232526A CN200880123252A CN101909809A CN 101909809 A CN101909809 A CN 101909809A CN 2008801232526 A CN2008801232526 A CN 2008801232526A CN 200880123252 A CN200880123252 A CN 200880123252A CN 101909809 A CN101909809 A CN 101909809A
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grafting material
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electronic component
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古泽彰男
坂口茂树
末次宪一郎
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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Abstract

本发明的包含2～10.5重量％的Cu、0.02～0.2重量％的Ge、和89.3～97.98重量％的Bi的接合材料，具有275℃的耐热性和优良的润湿性，本发明的包含2～10.5重量％的Cu、0.02～0.2重量％的Ge、0.02～0.11重量％的Ni、和89.19～97.96重量％的Bi的接合材料，具有更优良的耐热性。

Description

接合材料、电子部件以及接合结构体
技术领域
本发明涉及不含铅的接合材料(焊锡材料)、使用该接合材料的电子部件以及接合结构体，具体涉及连接构成电子部件的电子元件和电极的接合材料，更具体来说，涉及不会由于电子部件和基板接合时的加热而熔融的接合材料。
技术背景
近年来，对于地球环境保护的关心正在提高，担心铅会从使用焊锡材料的废弃物溶出到土壤中。因此，作为应对环境问题的对策，不含铅的无铅焊锡材料的开发正在推进，尤其受到关注的是高耐热性的无铅焊锡材料。
作为高耐热性的无铅焊锡材料的用途，像功率晶体管这样的电子部件的内部接合是具有代表性的。如图10所示，电子部件1具有电子元件4、电极5、和将它们接合的接合材料6。电子部件1通过别的接合材料3与基板2接合。别的接合材料3一般采用的是熔点为220～230℃的焊锡材料。例如，96.5重量％Sn-3重量％Ag-0.5重量％Cu(熔点约220℃)、99.3重量％Sn-0.7重量％Cu(熔点约227℃)。
电子部件1和基板2的焊接通过喷流式焊接装置来进行。被加热至250℃以上而熔融的焊锡材料被提供给到接合部分上。此时，电子部件1的温度达到250～265℃。此时，如果在电子部件1的内部将电子元件4和电极5相接合的接合材料6发生熔融的话，则存在最终的制品产生品质不良的可能性。因此，使用于电子部件1的内部的接合材料6要求具有比将电子部件1焊接在基板2上时达到的电子部件1的最高温度高的熔融温度。
作为熔融温度为270～272℃的高耐热性焊锡材料，已提出了以Bi为主成分、且含有0.2～0.8重量％的Cu和0.02～0.2重量％的Ge的焊锡材料(参照专利文献1)。
专利文献1：日本专利第3886144号公报(图2)
发明内容
发明所要解决的课题
但是，专利文献1的焊锡材料具有与Bi和Cu的共晶组成相近的组成。如果生成作为Bi和Cu的共晶合金的99.5重量％Bi-0.5重量％Cu的话，焊锡材料有时会在270℃熔融。该焊锡材料对于通过回流焊接将电子部件接合在基板上的情况是适用的，但在使用喷流式焊接装置的情况下，电子部件会被加热到265℃左右，可能会导致电子部件的内部接合断裂。因此，专利文献1的焊锡材料作为电子部件的内部接合所用的接合材料来使用是困难的。
又，像功率晶体管那样会流经大电流的电子部件，从确保安全性这一点来考虑，要求具有比加热时的上限温度高10℃左右的高耐热温度。如果考虑到电子部件有时会被加热到265℃左右的情形，用于电子部件的内部接合的接合材料要求具有275℃以上的耐热性。因此，即便是熔融温度为270～272℃的具有耐高温性的焊锡材料，有时也不能使用于电子部件的内部接合。
解决问题的手段
本发明正是鉴于上述问题而作的，其目的在于提供一种具有275℃以上的耐热性的接合材料，还提供一种品质优异的电子部件以及接合结构体。
即，本发明涉及一种接合材料(接合材料A)，其包含2～10.5重量％的Cu、0.02～0.2重量％的Ge、和89.3～97.98重量％的Bi。另外，接合材料A可以含有不可避免的杂质。
本发明还涉及一种接合材料(接合材料B)，其包含2～10.5重量％的Cu、0.02～0.2重量％的Ge、0.02～0.11重量％的Ni、和89.19～97.96重量％的Bi。另外，接合材料B可以含有不可避免的杂质。
本发明还涉及一种电子部件，其具有：电子元件、与所述电子元件连接的电极、以及接合所述电子元件和所述电极的上述接合材料A或接合材料B。
本发明还涉及一种接合结构体，其具有电子部件、搭载有所述电子部件的基板、以及接合所述电子部件和所述基板的第一接合材料，第一接合材料是具有230℃以下的熔点的焊锡材料，所述电子部件具有：电子元件、与所述电子元件连接的电极、以及接合所述电子元件和所述电极的第二接合材料，第二接合材料是上述接合材料A或接合材料B。
另外，x重量％Bi-y重量％Cu-z重量％Ge-w重量％Ni意味着含有x重量％のBi、y重量％的Cu、z重量％的Ge、以及w重量％的Ni的合金。又，Bi-y重量％Cu意味着含有y重量％的Cu、剩余部分为Bi以及Ge(或者Al、Li或P)的合金。还有，Bi-y重量％Cu-z重量％Ge意味着含有y重量％的Cu、z重量％的Ge、剩余部分为Bi以及Ni的合金。关于其它的合金，基于上述来进行标记。
发明效果
采用本发明，可以提供一种具有275℃以上熔融温度、不含铅的接合材料。将本发明的接合材料使用于功率晶体管这样的电子部件的内部接合时，用于内部接合的接合材料不会因为电子部件接合至基板时的加热而发生熔融。因此，可以抑制电子部件、包含该电子部件的接合结构体的不良情况。
附图说明
图1是示出二元合金的共晶点温度的图。
图2是示出98重量％Bi-2.0重量％Cu的DSC曲线的图。
图3是示出98重量％Bi-2.0重量％Cu的吸热率和接合强度的关系的图。
图4是示出接合材料中的Cu的含有量与吸热率为20％的温度的关系的图。
图5是示出接合材料中微量含有的元素与氧化物生成量的关系的图。
图6是示出Bi-2.0重量％Cu中Ge含有量与氧化物生成量的关系的图。
图7是示出Bi-7.4重量％Cu-0.04重量％Ge中Ni含有量与氧化物生成量的关系的图。
图8是示出电子部件的一个实例的构造的概略截面图。
图9是示出接合结构体的一个实例的构造的概略截面图。
图10是示出以往的功率晶体管的一个实例的构造的概略截面图。
具体实施方式
实施形态1
本实施形态的接合材料包含有2～10.5重量％的Cu、0.02～0.2重量％的Ge、和89.3～97.98重量％的Bi。Cu的含有量较理想的是2～6重量％，Ge的含有量较理想的是0.05～0.1重量％。
本实施形态的接合材料，由于具有275℃的耐热性，在例如功率晶体管那样的电子部件中，适于用作将电子元件和电极接合的接合材料。电子部件的内部所使用的接合材料的耐热性高，因此采用喷流式焊接装置将电子部件接合在基板上时，抑制了电子部件的品质不良。又，本实施形态的接合材料由于不含铅，因此可以提供一种无铅的电器设备和电子设备。
为了确保275℃的耐热性，将具有与275℃相近的共晶点温度的二元合金(由两种元素构成的合金)用于基材(母材)是有效的。从多种元素中选择共晶点温度接近275℃的元素的组合时，应重视的是元素有无毒性。出于毒性的考虑，排除了Hg、Sb、Se等元素。
图1是示出二元合金的共晶点温度的图。纵轴的元素和横轴的元素的交点的数值表示的是这两种元素的共晶点温度。从图1可知，例如，Sn-Ag合金的共晶点温度为221℃，Ni-Cu合金不存在共晶点。根据图1可知，共晶点温度接近275℃的元素组合为，Bi和Cu的组合、或者Bi和Ge的组合这两种。
在此，Bi和Cu的共晶合金包含有99.5重量％的Bi和0.5重量％的Cu(99.5重量％Bi-0.5重量％Cu)。又，Bi和Ge的共晶合金包含有99重量％的Bi和1重量％的Ge(99重量％Bi-1重量％Cu)。但是，Ge的价格约为Cu的420倍。因此，出于提供便宜的材料的观点考虑，与含有1重量％的Ge的合金相比，选择含有0.5重量％Cu的99.5重量％Bi-0.5重量％Cu作为基材是有利的。
首先，合成以0.5重量％、2.0重量％、5.0重量％、7.4重量％或者10.5重量％的比例含有Cu的Bi和Cu的二元合金，观察其加热时的表现。
作为一个实例，在图2中示出通过热分析装置测定的98重量％Bi-2.0重量％Cu加热时的表现的结果。在图2的DSC曲线(Differential Scanning Calorimetry)中，示出固相温度(TS)为270℃，液相温度(TL)约为288℃。98重量％Bi-2.0重量％Cu在270℃开始部分地熔融，在到达了288℃附近的时刻处于完全熔融的液体状态。使接合材料全部熔融所必需的热量(以下称为总热量Q)可以根据吸热面积(S)得知。98重量％Bi-2.0重量％Cu的情况下，总热量Q为41.8J/g。
接下来，由于对于接合材料来说接合强度也是必要的，因此对98重量％Bi-2.0重量％Cu的吸热率和接合强度的关系进行调查。其结果示于图3中。吸热率是到该温度为止的吸热量的累计值相对于总热量Q的比例(％)。
接合强度使用黏结测试器(ボンディングテスタ)来测定。具体来说，利用接合材料将1005电容器与铜电极接合，其后，将接合部加热至规定的温度。在该温度下，以1.0×10-4m/s的移动速度从电容器的一端面向水平方向推压电容器，使得接合部断裂。反复进行10次同样的操作，测定出10个接合部断裂时的强度，求得平均值。
一般来说，接合材料的固体状态的接合强度比液体状态的接合强度强。又，接合材料的状态变化与吸热举动具有密切的关系。因此，通过调查吸热率和接合强度的关系，可以得到有关接合材料的状态变化的信息。
从图3可知，标记○所示的吸热率从固相温度270℃开始增加，在液相温度288℃达到100％。相对于此，标记△所示的接合强度在超过固相温度的275℃之前是在6.7～7.1N的范围，但在275℃至280℃之间急剧下降，接合强度变差。由于275℃的吸热率为20％，因此可知只要是吸热率在20％以下的温度范围，接合强度就是稳定的。另外，在此，如果是6.7N以上的接合强度，则判定强度充分。275℃处于固相温度和液相温度之间的固液共存的区域。接合材料在270℃开始熔融，但接合强度在275℃之前没有急剧下降。这是由于固相温度和液相温度之间还残留有固体的部分，伴随着温度的上升，液体的比率渐渐提高。
于是，对能确保必要的接合强度的吸热率为20％的温度和接合材料的组成之间的关系进行研究。图4示出在包含Bi和Cu的二元合金中，吸热率达到20％的温度和Cu的含有量之间的关系。从图4可知，吸热率为20％的温度在275℃以上的耐热性高的接合材料具有2重量％以上的Cu含有量。另外，Cu含有量为2重量％时，吸热率达到20％的温度为275.2℃，随着Cu含有量的增加，吸热率达到20％的温度上升。Cu的含有量超过10.5重量％时，吸热率达到20％的温度为282℃。
但是，在生产功率晶体管等电子部件时，是将接合材料加热到380℃使其熔融来使用的。Cu的含有量为10.5重量％的接合材料在380℃的吸热率为97％。Cu的含有量变高时，在380℃的熔融不充分，电子部件的生产性下降。因此，Cu的含有量最好在10.5重量％以下。
由此可知，98重量％Bi-2.0重量％Cu是可以确保275℃为止的耐热性的优良材料。但是，通过弯月面法(メニスカス法)对98重量％Bi-2.0重量％Cu进行试验后判明润湿性不充分。关于其原因，通过反复试验结果判明Bi量多达98重量％导致氧化物的生成量变多是润湿性降低的原因。
可以通过将比Bi优先氧化的元素添加到接合材料中来抑制Bi的氧化。作为比Bi优先氧化元素，举例有Ge、Al、Li、P等。
图5示出接合材料中微量含有的元素与氧化物生成量的关系。氧化物生成量是在使0.05重量％的Ge、Al、Li或P包含于Bi-2.0重量％Cu中，在300℃下搅拌4小时后测定到的。样本整体的重量为10kg时，如果采用不含有添加元素的接合材料，则氧化物生成量为88g，如果采用含有Ge的接合材料，则氧化物生成量为42g。这是因为Ge在Bi-2.0重量％Cu的表面优先氧化而形成氧化膜，抑制了Bi-2.0％重量Cu的氧化。从其结果可知，为了抑制Bi-2.0重量％Cu的氧化，Ge的添加是适用的。
图6示出Bi-2.0重量％Cu的Ge含有量和氧化物生成量的关系。随着Ge量的增加或减少，Bi量减少或增加。使0.05重量％的Li包含在Bi-2.0重量％Cu时，氧化物生成量为58g。氧化物生成量比这一数字少时，认为具有充分的抑制氧化物生成的效果。Ge含有量为0.02重量％时，氧化物生成量为52g，效果开始出现。Ge含有量为0.05重量％、0.1重量％以及0.2重量％时，氧化物生成分别为42g、40g以及45g，效果得到承认。另一方面，Ge含有量为0.3重量％时，生成氧化物生成量为60g，比作为基准值58g多。
由此可知，为了使氧化物生成减少，提高润湿性，可以将Ge含有量设为0.02重量％以上0.2重量％以下。但是，Ge的价格较高，大约为Cu的420倍，因此Ge使用量最好为少量。进一步地，Ge含有量为0.05重量％的情形和Ge含有量为0.2重量％的情形，氧化物生成量的差变小。因此，从减少高价的Ge的使用量的观点考虑，将Ge含有量设为0.02～0.05重量％也是有效的。
表1中例示出本实施形态的接合材料的组成。又，还示出接合材料的吸热率为20％时的温度(耐热温度)与润湿性。
[表1]
  Bi(重量％)   Cu(重量％)   Ge(重量％)   耐热温度(℃)   润湿性
 实施例1   97.98   2.0   0.02   275.1   良好
 实施例2   97.94   2.0   0.06   275.0   良好
 实施例3   96.44   3.5   0.06   275.8   良好
 实施例4   94.16   5.8   0.04   276.7   良好
 实施例5   91.5   8.4   0.10   280.4   良好
 实施例6   89.3   10.5   0.20   281.2   良好
 比较例1   89.5   10.5   0   281.4   不充分
 比较例2   89.1   10.5   0.4   281.1   不充分
6种类的实施例1～6中，实施例6的89.3重量％Bi-10.5重量％Cu-0.2重量％Ge的耐热性最高。但是，考虑到耐热性和焊接工序的作业性的平衡，实施例3的96.44重量Bi-3.5重量％Cu-0.06重量％Ge是优良的组成。
作为比较例，示出了不包含Ge的接合材料(比较例1)和89.1重量％Bi-10.5重量％Cu-0.4重量％Ge(比较例2)。可见，这些都难说润湿性充分，不适合用作接合材料。
使用实施例1～6的接合材料，接合电子元件和电极，以完成电子部品。具体地说，将实施例1的接合材料100g放入SUS制的容器(直径40mm、深度90mm)，加热到380℃使其熔融。在SUS制造的容器的底部，设有直径02mm的排出孔。在SUS制造的容器的上部，设置有对容器内施加压力的压力控制机构。通过压力控制机构的动作，可以使规定量的熔融材料从容器底部的排出孔排出。使用由该SUS制的容器和压力控制机构构成的单元，将0.3g的熔融材料提供给Cu制的引线框，接着，将Si制的芯片(3mm×4mm)装载在熔融材料之上。然后，冷却至室温并利用接合材料将引线框和Si制的芯片接合。
通过Au制的导线使得引线框的电极端子和被接合的Si制的芯片上的电极端子连接并电导通。然后，通过利用环氧制树脂对整体进行铸模，完成电子部件(TO-220F)。
将这样完成的电子部件(TO-220F)的导线端子插入酚醛纸制的电路基板中，将熔融的96.5重量％Sn-3重量％Ag-0.5重量％Cu、或99.3重量％Sn-0.7重量％Cu用于接合材料来进行焊接。关于实施例2～6的接合材料，也以相同的顺序进行试制。其后，在检查工序，可以确认接合有电子部件的基板上没有发生不良情况，具有与接合有以通常的含铅焊锡完成的电子部件的基板相同的性能。
由此可以理解，接合材料包含2～10.5重量％的Cu、0.02～0.2重量％的Ge和89.3～97.98重量的Bi时，可以确保275℃为止的耐热性，适用于像功率晶体管那样的电子部件的内部接合。因此，在将本实施形态的接合材料用于电子元件和电极的内部接合时，内部接合部分不会因基板向电子部件接合时的加热而发生熔融，因而不会产生不良情况。
实施方式2
本实施形态的接合材料包含2～10.5重量％的Cu、0.02～0.2重量％的Ge、0.02～0.11重量的Ni、和89.19～97.96重量％的Bi。Cu的含有量理想的是2～6重量％，Ge的含有量理想的是0.05～0.1重量％，Ni的含有量理想的是0.05～0.08重量％。与实施方式1的接合材料相比，本实施形态的接合材料的耐冲击性高。
耐冲击性可以通过使60g的测锤从180mm的高度向1.6mm×0.8mm尺寸的片式电容器的侧面冲撞的实验来评价。
使用具有以92.56重量％Bi-7.4重量％Cu-0.04重量％Ge接合的接合部的芯片电容器进行上述耐冲击试验后，芯片电容器在接合部断裂。观察断裂后的接合部的截面发现，是在Bi含有量多的α相和Cu含有多的β相的界面断裂的。
在此，α相和β相的均一性可以通过结晶外周长值来进行评价。所谓结晶外周长值，被定义为存在于10μm×10μm的范围内的α相的总计外周长度。结晶外周长值大时，α相和β相的混合是充分的，结晶外周长值小时，α相和β相的混合是不充分的。在上述试验中断裂的接合截面处，测定的结晶外周长值为126μm。
为了增大结晶外周长值，在接合材料凝固时添加作为相形成的核的元素是有效的。作为这样的元素，不会在接合材料的熔融温度发生熔融、没有毒性、且在成本方面也优异的Ni比较适合。
图7示出Bi-7.4重量％Cu-0.04重量％Ge中，Ni含有量和结晶外周长值的关系。随着Ni量的增加以及减少，Bi量减少或增加。含有0.02重量％的Ni的接合材料的结晶外周长值为165μm，相比不含有Ni的情形有所增加。Ni含有量为0.05重量％、0.08重量％以及0.11重量％时，与不含有Ni的情形相比，结晶外周长值也有所增加，促进了α相和β相的混合。另一方面，Ni含有量为0.14重量％时，结晶外周长值为118μm，降低至与不含Ni的情形同等的程度。
由此，为了相比不含Ni的情形提高耐冲击性，Ni含有量需要是0.02重量％至0.11重量％的范围。又，Ni含有量超过0.08重量时，结晶外周长值开始降低，因此Ni含有量最好是0.02重量％至0.08重量的范围。
表2中例示出本实施形态的接合材料的组成。又，还示出接合材料的吸热率为20％时的温度(耐热温度)与耐冲击性。
[表2]
  Bi(重量％)   Cu(重量％)   Ge(重量％)   Ni(重量％)   耐热温度(℃)   耐冲击性
  实施例7   97.96   2.0   0.02   0.02   275.2   良好
  实施例8   97.9   2.0   0.06   0.04   275.2   良好
  实施例9   96.4   3.5   0.06   0.04   275.7   良好
  实施例10   94.06   5.8   0.04   0.10   276.7   良好
  实施例11   91.4   8.4   0.10   0.10   280.3   良好
  实施例12   89.19   10.5   0.20   0.11   281.5   良好
  实施例13   89.3   10.5   0.20   0   281.2   不充分
  实施例14   89.13   10.5   0.20   0.17   281.8   不充分
6类的实施例7～12中，实施例12的89.19重量％Bi-10.5重量％Cu-0.2重量％Ge-0.11重量％Ni的耐热性最高。但是，考虑到耐热性和焊接工序的作业性的平衡，实施例9的96.4重量Bi-3.5重量％Cu-0.06重量％Ge-0.04重量％Ni是优良的组成。又，与实施例1～6相比，实施例7～12的接合材料都是耐冲击性优良的组成。
表2中还同时示出不含Ni的接合材料(实施例13)和含过剩的Ni的89.13重量％Bi-10.5重量％Cu-0.2重量％Ge-0.17重量％Ni(实施例14)。可见，它们的耐热性以及润湿性都优良，但得不到使耐冲击性提高的效果。
使用实施例7～12的接合材料，与实施形态1的情形同样地将电子元件和电极接合，以完成电子部品。其后，与实施形态1的情形同样地将电子部件装载在将基板上，投入喷流式焊接装置中，将熔融的96.5重量％Sn-3重量％Ag-0.5重量％Cu、或99.3重量％Sn-0.7重量％Cu用于接合材料来进行焊接。其后，在检查工序，可以确认接合有电子部件的基板上没有发生不良情况，具有与接合有以通常的含铅焊锡完成的电子部件的基板相同的性能。
由此可以理解，接合材料包含2～10.5重量％的Cu、0.02～0.2重量％的Ge、0.02～0.11重量％的Ni、89.19～97.96重量的Bi时，可以确保275℃为止的耐热性，且由于提高了耐冲击性，因此可以适用于像功率晶体管那样的电子部件的内部接合。因此，在将本实施形态的接合材料用于电子元件和电极的内部接合时，内部接合部分不会因电子部件接合到基板时的加热而发生熔融，也不会产生冲撞导致的不良情况。
实施形态3
本实施形态的电子部件具有电子元件、与电子元件连接的电极、以及将电子元件和电极接合的接合材料。在此，接合材料可以使用实施形态1或实施形态2的接合材料。
电子元件没有特别的限定，例如由Si芯片、SiC芯片、线圈等构成。电子部件并不限于功率晶体管，可以列举芯片部件、QFP(Quad Flat Package)、BGA(Ball GridArray)等表面安装部件、或轴向部件、径向部件等插入部件。
图8是示出作为本实施形态的电子部件的一个实例的功率晶体管的结构的概略截面图。功率晶体管10是负担着高电压和高电流的、伴有大的发热的半导体安装部件。电子元件11通过接合材料12与电极13接合。功率晶体管10在别的工序中，使用喷流式焊接装置安装在规定的基板上，构成电气设备或电子设备。安装在基板上时，虽然功率晶体管的温度达到265℃，但实施形态1或实施形态2的接合材料没有熔融。因此，电子元件11与电极13的接合不会发生断裂。
实施形态4
本实施形态的接合结构体具有电子部件、装载电子部件的基板、将电子部件和基板接合的第一接合材料、第一接合材料具有230℃以下的熔点(固相温度)，电子部件具有电子元件、与电子元件连接的电极、将电子元件和电极接合的第二接合材料，第二接合材料由实施形态1或2所述的接合材料构成。
图9是本实施形态的接合结构体的一个实例的概略截面图，具有实施形态3的功率晶体管10和装载该功率晶体管10的基板14。功率晶体管10和基板14的接合使用的是具有230℃以下的熔点的第一接合材料15。作为第一接合材料，例如使用96.5重量％Sn-3重量％Ag-0.5重量％Cu、99.3重量％Sn-0.7重量％Cu等。
产业上的可利用性
本发明的接合材料可以适用于通过例如喷流式焊接装置安装在基板上的电子部件以及包含该电子部件的接合结构体。本发明的接合材料尤其适合于要求275℃的耐热性的电子部件，也可以应用于要求高耐冲击性的电子部件。

Claims (4)

1.一种接合材料，其特征在于，包含2～10.5重量％的Cu、0.02～0.2重量％的Ge、和89.3～97.98重量％的Bi。
2.一种接合材料，其特征在于，包含2～10.5重量％的Cu、0.02～0.2重量％的Ge、0.02～0.11重量％的Ni、和89.19～97.96重量％的Bi。
3.一种电子部件，其特征在于，具有：电子元件、与所述电子元件连接的电极、以及接合所述电子元件和所述电极的权利要求1或2所述的接合材料。
4.一种接合结构体，其特征在于，具有：电子部件、搭载有所述电子部件的基板、以及接合所述电子部件和所述基板的第一接合材料，所述第一接合材料具有230℃以下的熔点，所述电子部件具有：电子元件、与所述电子元件连接的电极、以及接合所述电子元件和所述电极的第二接合材料，所述第二接合材料是权利要求1或2所述的接合材料。
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