CN110268533B - 用于短红外光谱范围的基于锗的焦平面阵列 - Google Patents

用于短红外光谱范围的基于锗的焦平面阵列 Download PDF

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CN110268533B
CN110268533B CN201980001248.0A CN201980001248A CN110268533B CN 110268533 B CN110268533 B CN 110268533B CN 201980001248 A CN201980001248 A CN 201980001248A CN 110268533 B CN110268533 B CN 110268533B
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germanium
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乌利尔·利维
乌拉罕·巴卡尔
俄梅尔·卡帕奇
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Abstract

本发明公开一种包括金字塔形状的硅(Si)基和锗光电二极管(Ge photodiode)的光检测结构以及制造所述光检测结构的方法。所述硅基具有宽的面向入射光的金字塔底部和较窄的金字塔顶部，所述锗光电二极管形成于所述硅基的所述金字塔顶部、并且可操作来检测短波红外范围的光。如前所述的光检测结构可以在空间上重复设置，并制成设于硅上的锗光电检测器的焦平面阵列(focal plane array)。

Description

用于短红外光谱范围的基于锗的焦平面阵列
相关申请
本申请要求2018年1月9日提交的美国临时申请62615198的优先权，其全文内容通过引用以其整体结合到本说明书中
技术领域
本说明书所披露的实施例大体上关于一种处于短波红外(short wave infrared,SWIR)光谱范围里的焦平面阵列(focal plane arrays,FPAs)，特别是关于一种形成基于锗(Ge)探测器的FPAs的方法。
背景技术
运行在SWIR(通常定义为在大约1000-2500nm波长之间)范围的成像系统由于各种原因越来越吸引人们的注意。例如，与可见光范围相比，SWIR范围内的光对诸如雾和沙尘这样的极端天气条件更不敏感。而且，SWIR波长范围对于人眼来说是不可见的。另外，用眼安全的法规允许使用SWIR范围内的高能有源照明源。这些优势，结合不同于用于SWIR的热成像图像对比机制相似于可见光范围的、因而允许使用传统的图像识别算法的事实，使得就成像目的而言SWIR范围是可见光范围的一个有吸引力的替代方案。
SWIR范围里已知的FPAs典型地是使用InGaAs材料系统制造。尽管基于InGaAs的FPAs的性能包线具有吸引力，这样的FPAs成本昂贵，阻碍了其在许多消费市场的应用。
因此，就存在对低成本高性能的SWIR光电检测器和基于硅和其它组IV材料的FPAs、以及制造这样的SWIR光电检测器和FPAs的方法的需求，并且也有利的。
发明内容
本说明书中描述的实施例关于用于检测SWIR范围内的光的低成本、高性能的光检测结构，以及用于制造此结构的方法。
在示例性实施例中，提供包括金字塔形状的硅基(Si)和锗(Ge)光电二极管的光检测结构，硅基具有宽的面向入射光的金字塔底部和窄的金字塔顶部，所述锗光电二极管形成于硅金字塔顶部，其中锗光电二极管可操作来检测SWIR范围内的光。
在本发明的示例性实施例中，所述锗光电二极管包括p-n结。
在本发明的示例性实施例中，所述锗光电二极管包括p-i-n结。
在本发明的示例性实施例中，本说明书上下文所描述的光检测结构进一步包括设置于所述金字塔底部和所述入射光之间的微透镜。
在本发明的示例性实施例中，本说明书上下文所描述的光检测结构进一步包括设置于所述金字塔底部和所述微透镜之间的抗反射层。
在本发明的示例性实施例中，所述金字塔底部是大约10x 10平方微米(μm2)的正方形。在本发明的示例性实施例中，所述金字塔底部是大约20x20μm2的正方形。
在本发明的示例性实施例中，所述金字塔顶部是大约1x 1μm2的正方形。在本发明的示例性实施例中，所述金字塔顶部是大约介于1x 1μm2到10x10μm2的正方形。
在本发明的示例性实施例中，在空间上重复提供本说明书上下文中所描述的光检测结构，以提供复数个形成在相应的硅金字塔顶部上的锗光电二极管，以形成FPA。
附图说明
本说明书中所披露的非限制性实施例可参阅以下说明书附图来进行描述。在不同图示中等同的结构、元件或部件通常以相同数字进行标注。所述图示和说明书旨在阐明和澄清本发明的实施例，而不应被认为是以任何方式对本发明进行限制。在所述图示中：
图1示意的是本发明锗基光敏感结构的实施例的侧视图；及
图2示意的是制造本发明锗基FPA的方法的主要步骤。
具体实施方式
在本说明书的以下描述中，将给出具体细节以供充分理解。然而，本领域技术人员会理解本说明书中所披露的本发明不使用这些具体细节亦可实施。在其它情形里，没有描述众所周知的方法以免使本说明书所披露的本发明不清楚。
应理解，本说明书所披露的本发明的某些特征出于清楚说明的目的在不同实施例中进行了描述，这些特征也可以组合在单个的实施例中。相反地，为简要说明将本发明的不同特征在单个的实施例中进行描述，这些特征也可以在不同实施例中单独或以任何合适的组合提供。
图1是本发明锗基光敏感(PS)结构的实施例的侧视图，标为100。结构100包括在掺硅基板(晶圆)104上生长的锗吸收介质的层102、包括一体形成于所述硅晶圆上的硅金字塔108的光收集结构106、填充在相邻金字塔108之间的间隙里的绝缘氧化物112、和导电性接触体114，接触体114用于将一个或多个锗光电检测器(以下也称为“锗光电二极管”或简单地称为“锗二极管”)120与外界进行电性连接。图1还显示了蚀刻到所述硅基板里的生长晶种116，用以支持所述锗层的晶体生长(crystalline growth)并卡住螺纹错位(trapthreading dislocations)(未显示)。所述卡住螺纹错位防止错位蔓延到位于所述晶种上方的所述锗层里面，因而改善所述锗层的质量。所述晶种受位于其各侧面(除了底面)上的薄氧化物层118的保护。这样的作法是确保所述锗晶体生长从所述晶种的底部开始。
更详细地，每个硅金字塔108形成为具有位于晶圆104上的大的基部“B”。所述基部可具有正方形的形状，其示例性尺寸是10x10μm2或更大，例如大至20x 20μm2。所述金字塔顶部的正方形形状和尺寸是示例性的，其它形状(例如长方形)或尺寸也是可能的。锗二极管120(例如，具有p-n或p-i-n的结构)形成在所述金字塔的窄的顶部上。每个金字塔收集撞击在所述大的基部(B)上的光，并将所述光限定到所述锗二极管的更小尺寸上。例如，所述锗二极管具有从大约1μm到几μm(例如，大约2、3、4和甚至10)的侧向尺寸。所述锗层的厚度h可以是大约1μm或更大，并被选择为使得能大量吸收SWIR光(例如，在1500nm波长上吸收大于30％)。由于所述锗二极管的尺寸相比所述硅金字塔基部的尺寸是小的，将大大减小与所述吸收介质的量成比例的暗电流分量(dark current component)。微透镜110的阵列可选地放置在所述金字塔下面以进一步提高光收集效率。可选地可以增加抗反射层(AR)122以减少撞击到FPA上的光的反射。
在实施过程中，光通过每个硅金字塔108传播，硅金字塔108在SWIR波长范围是透明的。当光到达所述硅金字塔顶部时，将穿透进入到锗二极管120里。由所述锗层吸收的光产生电子穴对(electron-hole pairs)，其被所二极管结构分开，在反向偏置的应用下(under the application of reverse bias)或者甚至没有以现有方式偏置，导致提供光检测(photo detection)的有用的光电流(photocurrent)。
包括一个硅金字塔的结构可以认为是单个的“有源像素(active pixel)”，硅金字塔在顶部具有锗二极管并被氧化物包围。所述结构可以在空间上重复设置许多次，以提供由此形成所述FPA的光敏感晶圆的有源像素阵列。
图2示意的是制造本发明锗基FPA的方法的主要步骤。在步骤202，提供具有{100}晶体平面定向(crystallographic plane orientation)的硅晶圆作为启动材料，所述硅晶圆最好是双重抛光的。所述晶圆提供有薄的氧化物(～10nm氧化物厚度)，来保护所述硅的表面不受随后的光刻工艺(lithography process)的影响。在步骤204，执行光刻和蚀刻工艺以在所述硅中界定对准标记。在步骤206，界定金字塔图案掩膜(pyramid patternmask)，例如，通过将第一薄氮化硅层(silicon nitride layer)(或者能被作为用于蚀刻工艺的掩膜的任何其它层)沉积在热生长的氧化物(thermally grown oxide)的顶部上。在步骤208，对所述氮化硅层使用光刻(photolithography)和蚀刻工艺来界定所述金字塔基部的尺寸(例如，为大约10x10μm2到大约20x 20μm2的正方形形状)。既可以通过有氢氧化钾溶液(potassium hydroxide(KOH)solution)的非等向性蚀刻(anisotropic etching)工艺、也可以通过反应离子蚀刻(reactive ion etching，RIE)工艺来在步骤210里制造所述硅金字塔，后者通过以已知方式控制RIE参数来提供所期望的轮廓的方式获得。在步骤212，沉积(例如使用等离子体增强化学的气相沉积法(CVD))厚的氧化硅层以填充相邻金字塔之间的空隙。例如通过化学机械研磨(CMP)平面化所述结构，使得所述氧化物与所述硅金字塔的顶部共平面。在步骤214，第二薄的氮化物沉积层以及随后氧化物沉积的第二步被执行直到所述二极管的期望厚度(图1中的h)。在步骤216，在所述氧化物沉积之后沉积第三薄的氮化物层，以在随后的CMP工艺里提供选择性。此第三氮化物层典型地比所述第二氮化物层厚。在步骤218，界定所述生长晶种图案。首先，通过执行光刻和蚀刻工艺穿透所述第三氮化物、氧化物和第二氮化物层并向下进入到所述硅(例如进到所述硅里1μm)来制成所述晶种结构。所述晶种的典型宽度可以是从几百纳米到大约1μm。在步骤220，通过执行光刻和蚀刻工艺移除第三氮化物层及其下面的氧化物来界定所述锗二极管的侧向尺寸。
接下来，通过执行短氧化步骤(short oxidation step)来保护所述晶种的侧壁，短氧化步骤后面有RIE，其暴露所述晶种的底部。在步骤222，通过RIE或湿化学蚀刻移除每个像素的第二氮化物层，无需使用光刻掩膜。其结果是，第三氮化物的一些也会被移除。然而，由于第三氮化物层比第二氮化物层更厚，第三氮化物层的一些仍将被保留、并且之后会被作为CMP工艺的停止层。
在步骤224，使用例如已知的CVD工艺来生长所述锗层，可参阅例如“硅上锗外延(Germanium epitaxy on silicon)”，《先进材料科学和技术(Sci.Technol.Adv.Mater.)》(2014)第15期，024601。在步骤226，执行另外的CMP工艺来平面化所述锗层。移除所述氮化物层，并且沉积几微米氧化物以用于钝化及镀金属的准备。在步骤228，通过创建p-n结或p-i-n结来界定所述锗二极管，使用标准的掺杂工艺来创建p-n结或p-i-n结，例如离子注入或扩散和掺杂激活，对于p-i-n例如可参阅“在p+和n+硅-在绝缘体上的层上制作的锗波导集成垂直管脚光电二极管(Waveguide-integrated vertical pin photodiodes of Ge)”，日本《应用物理》期刊第56期04CH05(2017)，而pn可参阅“通过预退火和受激准分子激光退火(Excimer Laser Annealing)来获得的高性能锗p-n光电二极管”，《IEEE光电子技术集(IEEE Photonics Technology Letters)》(第27卷，14期，1485-1488(2015))。
在示例性实施例中，所述锗光电检测器的中央区域的掺杂可以是n型的，其周围高掺杂区域是p+掺杂。可替换地，所述掺杂的极性可以是相反的，成长为大的锗(as-grownbulk Ge)是p型，而所述锗二极管周围是n+掺杂的。所述掺杂随后是通过接触界定和镀金属来完成锗二极管阵列(即，所述FPA)。
尽管本发明已由相关实施例及方法加以描述，然而上述实施例和方法的变化和转换对于本领域技术人员来说也是很明显的。应理解的是，本发明不限于本说明书中的实施例，而仅由权利要求书的范围界定。
除非相反的说明，在用于选择的项目列表中的最后两项之间的表述“和/或”的使用指示的是所列选项的一个或多个的选择是合适的并可以选择。
应理解的是，当权利要求或说明书中提及“一个(a)”或“一个(an)”元件，这样的提及不解释为只有一个那样的元件。
本说明书所提到的所有参考文献都全文并入本说明书中，如同每个参考文献被明确和单独指出要被包括到本发明中去的程度。另外，所引用的或指出的任何参考文献不应被解释为承认这些参考文献可作为本发明的现有技术。

Claims (20)

1.一种光检测结构，包括
a）金字塔形状的硅基，具有宽的面向入射光的金字塔底部和较窄的截头金字塔顶部；以及
b）锗光电二极管，仅生长于所述截头金字塔顶部上的蚀刻到所述截头金字塔顶部的生长晶种之上，其中所述锗光电二极管可操作来检测短波红外范围（SWIR）的光。
2.如权利要求1所述的光检测结构，其中所述锗光电二极管包括p-n结。
3.如权利要求1所述的光检测结构，其中所述锗光电二极管包括p-i-n结。
4.如权利要求1所述的光检测结构，其中所述金字塔底部是10 x 10 µm2的正方形。
5.如权利要求1所述的光检测结构，其中所述截头金字塔顶部是1 x 1 µm2的正方形。
6.如权利要求1所述的光检测结构，其中所述金字塔底部是10 x 10 µm2的正方形，并且其中所述截头金字塔顶部是1 x 1 µm2的正方形。
7.如权利要求1所述的光检测结构，其中所述短波红外范围包括1000nm到1700nm的波长范围。
8.如权利要求1所述的光检测结构，进一步包括设置于所述金字塔底部和所述入射光之间的微透镜。
9.如权利要求8所述的光检测结构，进一步包括位于所述金字塔底部和所述微透镜之间的抗反射层。
10.如权利要求1所述的光检测结构，在空间上重复设置复数个生长于相应截头金字塔顶部上的锗光电二极管以形成焦平面阵列(FPA)。
11.如权利要求10所述的光检测结构，进一步包括设置于每个金字塔底部和所述入射光之间的微透镜。
12.如权利要求11所述的光检测结构，进一步包括位于每个金字塔底部和所述微透镜之间的抗反射层。
13.如权利要求1所述的光检测结构，其中所述锗光电二极管的高度小于所述硅基的高度。
14.一种方法，包括：
a）形成金字塔形状的硅基，所述硅基具有宽的面向入射光的金字塔底部和较窄的截头金字塔顶部；以及
b）仅在所述截头金字塔顶部上的蚀刻到所述截头金字塔顶部的生长晶种之上生长锗光电二极管，其中所述锗光电二极管可操作来检测短波红外范围的光。
15.如权利要求14所述的方法，其中所述仅在所述截头金字塔顶部上的蚀刻到所述截头金字塔顶部的生长晶种之上生长锗光电二极管的步骤包括生长具有位于垂直于入射光的平面中的侧向尺寸的锗光电二极管，所述侧向尺寸比所述硅基的所述金字塔底部小得多。
16.如权利要求14所述的方法，其中所述仅在所述截头金字塔顶部上的蚀刻到所述截头金字塔顶部的生长晶种之上生长锗光电二极管的步骤包括生长具有高度小于所述硅基高度的锗光电二极管。
17.如权利要求14所述的方法，其中所述形成金字塔形状的硅基的步骤包括生长复数个金字塔形状的硅基，并且其中所述仅在所述截头金字塔顶部上的蚀刻到所述截头金字塔顶部的生长晶种之上生长锗光电二极管的步骤包括在所述截头金字塔顶部上生长与之相配的复数个锗光电二极管，以形成焦平面阵列。
18.如权利要求14所述的方法，其中所述硅基的所述金字塔底部是10 x 10 µm2的正方形。
19.如权利要求14所述的方法，其中所述截头金字塔顶部是1 x 1 µm2的正方形。
20.如权利要求14所述的方法，其中所述硅基的所述金字塔底部是10 x 10 µm2的正方形，并且其中所述截头金字塔顶部是1 x 1 µm2的正方形。
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