JP2020508561A - 短赤外スペクトル領域のためのゲルマニウムベースの焦点面アレイ - Google Patents
短赤外スペクトル領域のためのゲルマニウムベースの焦点面アレイ Download PDFInfo
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- 229910052732 germanium Inorganic materials 0.000 title claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 4
- 238000003491 array Methods 0.000 title description 2
- 230000003595 spectral effect Effects 0.000 title description 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 238000001514 detection method Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 abstract description 13
- 150000004767 nitrides Chemical class 0.000 description 13
- 230000008569 process Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
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Abstract
Description
本出願は、その全体が参照により本明細書に組み込まれる、2018年1月9日に出願された米国仮特許出願第62615198号から優先権の利益を主張する。
本明細書に開示される実施形態は、一般的に、短波赤外(SWIR)スペクトル領域における焦点面アレイ(FPA)に関し、特に、ゲルマニウム(Ge)検出器に基づいてそのようなFPAを形成するための方法に関する。
SWIR(一般的に、約1000〜2500nmの間の波長であると定義される)で動作する画像システムは、多くの理由により注目を集めている。例えば、可視領域と比較して、SWIR領域の光は、霧及び粉塵のような極端な天候条件に対して感受性が低い。さらに、SWIRの波長領域は、人間の目には見えない。加えて、眼の安全規制は、SWIR領域における高出力の能動照明源の使用を可能にする。赤外線画像とは異なり、SWIRの画像コントラスト機構が可視領域の画像コントラスト機構に似ており、それゆえに従来の画像認識アルゴリズムの使用を可能にするという事実と合わせて考えると、このような利点は、SWIR領域を画像化目的のための可視領域に対する魅力的な代替手段にする。
本明細書に開示される実施形態は、SWIR領域で光を検出するための低コストであり高性能な光検出構造及びそのような構造を製造するための方法に関する。
本明細書に開示される実施形態の非限定的な例は、この段落の後に列挙され、本明細書に添付される図面を参照して、以下に記載される。1つ以上の図面に現れる同一の構造、素子または要素は、それらが現れる全ての図面において、概して同一の数字で付記される。図面及び説明は、本明細書に開示される実施形態を明確にすることを意図しており、決して限定されるものと考慮されるべきではない。図面において:
図1は、本明細書に開示されるGeベースの(Ge-based)感光性構造の一実施形態を側面図で概略的に示す。
以下の詳細な説明では、完全な理解を提供するために、多くの具体的な詳細が述べられる。しかし、現在開示されている主題は、これらの特定の詳細なしで実施され得ることが、当業者によって理解されるであろう。他の例では、周知の方法は、現在開示されている主題を不明確にしないように、詳細には説明されていない。
Claims (12)
- 入射光に対向する広いピラミッド底部と、狭いピラミッド頂部と、を含むピラミッド形状を有するシリコン(Si)ベースと、
前記Siピラミッド頂部上に形成されるとともに、短波長赤外(SWIR)領域の光を検出するように動作可能であるゲルマニウム(Ge)フォトダイオードと、を備える、光検出構造。 - 前記Geフォトダイオードは、p−n接合部を含む、請求項1に記載の光検出構造。
- 前記Geフォトダイオードは、p−i−n接合部を含む、請求項1に記載の光検出構造。
- 前記ピラミッド底部は、約10×10μm2の正方形である、請求項1に記載の光検出構造。
- 前記ピラミッド頂部は、約1×1μm2の正方形である、請求項1に記載の光検出構造。
- 前記ピラミッド底部は、約10×10μm2の正方形であり、
前記ピラミッド頂部は、約1×1μm2の正方形である、請求項1に記載の光検出構造。 - 前記SWIR領域は、約1000nm〜約1700nmの波長領域を含む、請求項1に記載の光検出構造。
- 前記ピラミッド底部と前記入射光との間に配置されたマイクロレンズをさらに備える、請求項1に記載の光検出構造。
- 前記ピラミッド底部と前記マイクロレンズとの間に設置された反射防止層をさらに備える、請求項8に記載の光検出構造。
- 空間的に繰り返されて、それぞれのSiピラミッド頂部上に形成された複数のGeフォトダイオードを提供し、焦点面アレイ(FPA)を形成する、請求項1に記載の光検出構造。
- 各ピラミッド底部と前記入射光との間に配置されたマイクロレンズをさらに備える、請求項11に記載の光検出構造。
- 各ピラミッド底部と前記マイクロレンズとの間に設置された反射防止層をさらに備える、請求項12に記載の光検出構造。
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Application Number | Priority Date | Filing Date | Title |
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JP2020156665A JP7304636B2 (ja) | 2018-01-09 | 2020-09-17 | 短赤外スペクトル領域のためのゲルマニウムベースの焦点面アレイ |
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Application Number | Priority Date | Filing Date | Title |
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US62/615,198 | 2018-01-09 | ||
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