ATE408961T1 - Mit einem siliziumsubstrat und einem siliziumschaltkreis integrierte isolierte germanium-photodetektoren umfassender bildsensor - Google Patents
Mit einem siliziumsubstrat und einem siliziumschaltkreis integrierte isolierte germanium-photodetektoren umfassender bildsensorInfo
- Publication number
- ATE408961T1 ATE408961T1 AT04821500T AT04821500T ATE408961T1 AT E408961 T1 ATE408961 T1 AT E408961T1 AT 04821500 T AT04821500 T AT 04821500T AT 04821500 T AT04821500 T AT 04821500T AT E408961 T1 ATE408961 T1 AT E408961T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon
- image sensor
- circuit integrated
- silicon substrate
- photodetectors
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052732 germanium Inorganic materials 0.000 title abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US51093203P | 2003-10-13 | 2003-10-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE408961T1 true ATE408961T1 (de) | 2008-10-15 |
Family
ID=34885902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04821500T ATE408961T1 (de) | 2003-10-13 | 2004-10-13 | Mit einem siliziumsubstrat und einem siliziumschaltkreis integrierte isolierte germanium-photodetektoren umfassender bildsensor |
Country Status (7)
| Country | Link |
|---|---|
| EP (2) | EP1995784A3 (de) |
| JP (1) | JP2008511968A (de) |
| KR (2) | KR101331992B1 (de) |
| CN (1) | CN1879397A (de) |
| AT (1) | ATE408961T1 (de) |
| DE (1) | DE602004016679D1 (de) |
| WO (1) | WO2005079199A2 (de) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8274715B2 (en) | 2005-07-28 | 2012-09-25 | Omnivision Technologies, Inc. | Processing color and panchromatic pixels |
| US8139130B2 (en) | 2005-07-28 | 2012-03-20 | Omnivision Technologies, Inc. | Image sensor with improved light sensitivity |
| US7916362B2 (en) | 2006-05-22 | 2011-03-29 | Eastman Kodak Company | Image sensor with improved light sensitivity |
| US8031258B2 (en) | 2006-10-04 | 2011-10-04 | Omnivision Technologies, Inc. | Providing multiple video signals from single sensor |
| US8237126B2 (en) | 2007-08-17 | 2012-08-07 | Csem Centre Suisse D'electronique Et De Mictrotechnique Sa | X-ray imaging device and method for the manufacturing thereof |
| US8211732B2 (en) * | 2008-09-11 | 2012-07-03 | Omnivision Technologies, Inc. | Image sensor with raised photosensitive elements |
| CN101794839B (zh) * | 2010-02-09 | 2011-08-10 | 中国科学院上海技术物理研究所 | 一种优化锑化铟光伏型探测器件吸收层厚度的方法 |
| WO2012138345A1 (en) * | 2011-04-07 | 2012-10-11 | Northrop Grumman Systems Corporation | Advanced focal plane array concept for overhead persistent ir applications |
| CN105518861B (zh) * | 2013-06-20 | 2018-10-02 | 斯坦舍有限公司 | 用于cmos传感器的栅控电荷调制器件 |
| CN104332527B (zh) * | 2014-10-08 | 2016-08-24 | 中国电子科技集团公司第五十研究所 | 一种提高铟镓砷红外探测器响应率的方法及相应探测器 |
| US10571631B2 (en) | 2015-01-05 | 2020-02-25 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
| KR102259759B1 (ko) * | 2016-05-13 | 2021-06-02 | 한국전자기술연구원 | 동시 입출력이 가능한 ROIC 구조와 이를 포함하는 Lidar ToF 센서 |
| US10300649B2 (en) * | 2017-08-29 | 2019-05-28 | Raytheon Company | Enhancing die flatness |
| CN110268533B (zh) * | 2018-01-09 | 2022-12-13 | 趣眼有限公司 | 用于短红外光谱范围的基于锗的焦平面阵列 |
| US10892295B2 (en) * | 2018-01-10 | 2021-01-12 | Microsoft Technology Licensing, Llc | Germanium-modified, back-side illuminated optical sensor |
| CN108259792A (zh) * | 2018-01-16 | 2018-07-06 | 德淮半导体有限公司 | 图像传感器单元 |
| US10847569B2 (en) | 2019-02-26 | 2020-11-24 | Raytheon Company | Wafer level shim processing |
| KR102160430B1 (ko) * | 2019-03-12 | 2020-09-28 | 주식회사 유진로봇 | 핀 단락 상태를 검출하는 거리 측정 센서 및 이동 로봇 |
| CN110854025A (zh) * | 2019-11-15 | 2020-02-28 | 中国科学院微电子研究所 | 一种硅光转接板及三维架构的集成方法 |
| US11810986B2 (en) | 2019-11-15 | 2023-11-07 | Institute of Microelectronics, Chinese Academy of Sciences | Method for integrating surface-electrode ion trap and silicon photoelectronic device, integrated structure, and three-dimensional structure |
| WO2021092991A1 (zh) * | 2019-11-15 | 2021-05-20 | 中国科学院微电子研究所 | 一种硅光转接板及三维架构以及表面电极离子阱与硅光器件以及三维架构的集成方法、集成结构、三维架构 |
| US11488999B2 (en) * | 2020-01-06 | 2022-11-01 | Qualcomm Incorporated | Active depth sensing image sensor |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US434359A (en) | 1890-08-12 | Sole-trimming machine | ||
| JPS5812481A (ja) * | 1981-07-15 | 1983-01-24 | Toshiba Corp | 固体撮像素子 |
| US4514748A (en) * | 1983-11-21 | 1985-04-30 | At&T Bell Laboratories | Germanium p-i-n photodetector on silicon substrate |
| JPH061219B2 (ja) * | 1985-03-25 | 1994-01-05 | 株式会社東芝 | 受光装置 |
| JPH0228373A (ja) * | 1988-07-18 | 1990-01-30 | Sony Corp | 積層型固体撮像素子の製造方法 |
| JPH0831587B2 (ja) * | 1989-09-25 | 1996-03-27 | 日本電気株式会社 | 固体撮像素子の製造方法 |
| US5308980A (en) | 1991-02-20 | 1994-05-03 | Amber Engineering, Inc. | Thermal mismatch accommodated infrared detector hybrid array |
| US5401952A (en) * | 1991-10-25 | 1995-03-28 | Canon Kabushiki Kaisha | Signal processor having avalanche photodiodes |
| DE69221443T2 (de) * | 1991-12-09 | 1998-02-05 | Sharp Kk | Flüssigkristallichtventil und Informationsprozessor unter Verwendung desselben |
| JPH10290023A (ja) * | 1997-04-15 | 1998-10-27 | Nec Corp | 半導体光検出器 |
| US6188056B1 (en) * | 1998-06-24 | 2001-02-13 | Stmicroelectronics, Inc. | Solid state optical imaging pixel with resistive load |
| JP4061609B2 (ja) * | 1998-06-29 | 2008-03-19 | マグナチップセミコンダクター有限会社 | 延伸されたピンドフォトダイオ―ドを有するイメ―ジセンサ及びその製造方法 |
| KR100399951B1 (ko) | 1998-12-30 | 2003-12-18 | 주식회사 하이닉스반도체 | 칼라이미지센서제조방법 |
| US6323942B1 (en) * | 1999-04-30 | 2001-11-27 | Canesta, Inc. | CMOS-compatible three-dimensional image sensor IC |
| US6326652B1 (en) * | 1999-06-18 | 2001-12-04 | Micron Technology, Inc., | CMOS imager with a self-aligned buried contact |
| JP3717104B2 (ja) | 2000-05-30 | 2005-11-16 | シャープ株式会社 | 回路内蔵受光素子 |
| JP4037367B2 (ja) * | 2002-02-08 | 2008-01-23 | キネティック リミテッド | 光検出器回路 |
| US7012314B2 (en) | 2002-12-18 | 2006-03-14 | Agere Systems Inc. | Semiconductor devices with reduced active region defects and unique contacting schemes |
-
2004
- 2004-10-13 CN CNA2004800332618A patent/CN1879397A/zh active Pending
- 2004-10-13 KR KR1020067009040A patent/KR101331992B1/ko active IP Right Grant
- 2004-10-13 EP EP08015312A patent/EP1995784A3/de not_active Withdrawn
- 2004-10-13 WO PCT/US2004/033782 patent/WO2005079199A2/en active Application Filing
- 2004-10-13 DE DE602004016679T patent/DE602004016679D1/de active Active
- 2004-10-13 EP EP04821500A patent/EP1685701B1/de not_active Not-in-force
- 2004-10-13 KR KR1020127021487A patent/KR20120099530A/ko not_active Application Discontinuation
- 2004-10-13 AT AT04821500T patent/ATE408961T1/de not_active IP Right Cessation
- 2004-10-13 JP JP2006535626A patent/JP2008511968A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1685701B1 (de) | 2008-09-17 |
| CN1879397A (zh) | 2006-12-13 |
| EP1995784A3 (de) | 2010-02-17 |
| WO2005079199A3 (en) | 2006-02-02 |
| JP2008511968A (ja) | 2008-04-17 |
| KR101331992B1 (ko) | 2013-11-25 |
| EP1995784A2 (de) | 2008-11-26 |
| EP1685701A2 (de) | 2006-08-02 |
| DE602004016679D1 (de) | 2008-10-30 |
| WO2005079199A2 (en) | 2005-09-01 |
| KR20060125744A (ko) | 2006-12-06 |
| EP1685701A4 (de) | 2006-10-25 |
| KR20120099530A (ko) | 2012-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties | ||
| REN | Ceased due to non-payment of the annual fee |